公开(公告)号：US20050227389A1

公开(公告)日：2005-10-13

申请号：US10822789

申请日：2004-04-13

申请人： Rabin Bhattacharya ,  Sigurd Wagner

发明人： Rabin Bhattacharya ,  Sigurd Wagner

IPC分类号： H01L21/00 ,  H01L51/00

CPC分类号： H01L51/0097 ,  H01L2251/5338 ,  Y02E10/549

摘要： A device is provided. The device includes a substrate, an inorganic layer disposed over the substrate, and an organic layer disposed on the inorganic conductive or semiconductive layer, such that the organic layer is in direct physical contact with the inorganic conductive or semiconductive layer. The substrate is deformed such that there is a nominal radial or biaxial strain of at least 0.05% relative to a flat substrate at an interface between the inorganic layer and the organic layer. The nominal radial or biaxial strain may be higher, for example 1.5%. A method of making the device is also provided, such that the substrate is deformed after the inorganic layer and the organic layer are deposited onto the substrate.

摘要翻译： 提供了一种设备。 该器件包括衬底，设置在衬底上的无机层和设置在无机导电或半导体层上的有机层，使得有机层与无机导电或半导体层直接物理接触。 衬底变形，使得在无机层和有机层之间的界面处相对于平坦衬底具有至少0.05％的标称径向或双轴应变。 标称径向或双轴应变可能较高，例如1.5％。 还提供了制造该器件的方法，使得在将无机层和有机层沉积到衬底上之后，衬底变形。

公开(公告)号：US20060169989A1

公开(公告)日：2006-08-03

申请号：US11332231

申请日：2006-01-17

申请人： Rabin Bhattacharya ,  Sigurd Wagner

发明人： Rabin Bhattacharya ,  Sigurd Wagner

IPC分类号： H01L51/00

CPC分类号： H01L21/469 ,  H01L27/3276 ,  H01L27/3288 ,  H01L51/0021 ,  H01L51/0097 ,  H01L51/52 ,  H01L51/5203 ,  H01L2251/5338 ,  H05K1/0283 ,  Y02E10/549 ,  Y10T428/24628 ,  Y10T428/24851

摘要： A device is provided. The device includes a substrate, an inorganic layer disposed over the substrate, and an organic layer disposed on the inorganic conductive or semiconductive layer, such that the organic layer is in direct physical contact with the inorganic conductive or semiconductive layer. The substrate is deformed such that there is a nominal radial or biaxial strain of at least 0.05% relative to a flat substrate at an interface between the inorganic layer and the organic layer. The nominal radial or biaxial strain may be higher, for example 1.5%. A method of making the device is also provided, such that the substrate is deformed after the inorganic layer and the organic layer are deposited onto the substrate.

摘要翻译： 提供了一种设备。 该器件包括衬底，设置在衬底上的无机层和设置在无机导电或半导体层上的有机层，使得有机层与无机导电或半导体层直接物理接触。 衬底变形，使得在无机层和有机层之间的界面处相对于平坦衬底具有至少0.05％的标称径向或双轴应变。 标称径向或双轴应变可能较高，例如1.5％。 还提供了制造该器件的方法，使得在将无机层和有机层沉积到衬底上之后，衬底变形。

公开(公告)号：US07465678B2

公开(公告)日：2008-12-16

申请号：US11332231

申请日：2006-01-17

申请人： Rabin Bhattacharya ,  Sigurd Wagner

发明人： Rabin Bhattacharya ,  Sigurd Wagner

IPC分类号： H01L21/469 ,  H01L23/58

CPC分类号： H01L21/469 ,  H01L27/3276 ,  H01L27/3288 ,  H01L51/0021 ,  H01L51/0097 ,  H01L51/52 ,  H01L51/5203 ,  H01L2251/5338 ,  H05K1/0283 ,  Y02E10/549 ,  Y10T428/24628 ,  Y10T428/24851

摘要： A device is provided. The device includes a substrate, an inorganic layer disposed over the substrate, and an organic layer disposed on the inorganic conductive or semiconductive layer, such that the organic layer is in direct physical contact with the inorganic conductive or semiconductive layer. The substrate is deformed such that there is a nominal radial or biaxial strain of at least 0.05% relative to a flat substrate at an interface between the inorganic layer and the organic layer. The nominal radial or biaxial strain may be higher, for example 1.5%. A method of making the device is also provided, such that the substrate is deformed after the inorganic layer and the organic layer are deposited onto the substrate.

摘要翻译： 提供了一种设备。 该器件包括衬底，设置在衬底上的无机层和设置在无机导电或半导体层上的有机层，使得有机层与无机导电或半导体层直接物理接触。 衬底变形，使得在无机层和有机层之间的界面处相对于平坦衬底具有至少0.05％的标称径向或双轴应变。 标称径向或双轴应变可能较高，例如1.5％。 还提供了制造该器件的方法，使得在将无机层和有机层沉积到衬底上之后，衬底变形。

公开(公告)号：US07968146B2

公开(公告)日：2011-06-28

申请号：US11931939

申请日：2007-10-31

申请人： Sigurd Wagner ,  Prashant Mandlik

发明人： Sigurd Wagner ,  Prashant Mandlik

IPC分类号： C23C16/448

CPC分类号： C23C16/0272 ,  C23C16/0245 ,  C23C16/22 ,  C23C16/30 ,  C23C16/401 ,  C23C16/509 ,  C23C30/00 ,  H01L31/18 ,  H01L51/0094 ,  H01L51/5253 ,  Y10T428/239 ,  Y10T428/24331 ,  Y10T428/24612 ,  Y10T428/24752 ,  Y10T428/265

摘要： A method for forming a coating over a surface is disclosed. The method comprises depositing over a surface, a hybrid layer comprising a mixture of a polymeric material and a non-polymeric material. The hybrid layer may have a single phase or comprise multiple phases. The hybrid layer is formed by chemical vapor deposition using a single source of precursor material. The chemical vapor deposition process may be plasma-enhanced and may be performed using a reactant gas. The precursor material may be an organo-silicon compound, such as a siloxane. The hybrid layer may comprise various types of polymeric materials, such as silicone polymers, and various types of non-polymeric materials, such as silicon oxides. By varying the reaction conditions, the wt % ratio of polymeric material to non-polymeric material may be adjusted. The hybrid layer may have various characteristics suitable for use with organic light-emitting devices, such as optical transparency, impermeability, and/or flexibility.

摘要翻译： 公开了一种在表面上形成涂层的方法。 该方法包括在表面上沉积，包含聚合材料和非聚合材料的混合物的混合层。 混合层可以具有单相或包含多相。 混合层通过使用单一前体材料源的化学气相沉积形成。 化学气相沉积工艺可以是等离子体增强的，并且可以使用反应气体进行。 前体材料可以是有机硅化合物，例如硅氧烷。 混合层可以包括各种类型的聚合材料，例如硅氧烷聚合物，以及各种类型的非聚合材料，例如氧化硅。 通过改变反应条件，可以调节聚合物材料与非聚合材料的重量比。 混合层可以具有适合于与有机发光器件一起使用的各种特性，例如光学透明性，不渗透性和/或柔性。

公开(公告)号：US5230753A

公开(公告)日：1993-07-27

申请号：US802119

申请日：1991-12-03

申请人： Sigurd Wagner

发明人： Sigurd Wagner

IPC分类号： H01L31/0376 ,  H01L31/20

CPC分类号： H01L31/03767 ,  H01L31/03765 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521

摘要： Alloys of hydrogenated amorphous silicon and germanium are disclosed that exhibit unexpectedly low saturated defect densities, particularly relative to the initial defect densities of the alloys, so as to render them substantially resistant to Staebler-Wronski degradation. The alloys are producible using conventional equipment, but glow-discharge methods are preferred. The preferred amount of germanium in the alloy is about 15 at. % to about 50 at. %. The alloys are particularly useful for making photovoltaic cells. The alloys can be used as intrinsic semiconductors and doped for use as "n" or "p" materials. Methods for making the alloys are also disclosed.

摘要翻译： 公开了氢化非晶硅和锗的合金，其显示出意想不到的低饱和缺陷密度，特别是相对于合金的初始缺陷密度，以使其基本上抵抗Staebler-Wronski降解。 该合金可以使用常规设备生产，但优选辉光放电方法。 合金中锗的优选量为约15英寸。 ％至约50。 ％。 该合金特别适用于制造光伏电池。 该合金可以用作本征半导体并掺杂用作“n”或“p”材料。 还公开了制造合金的方法。

公开(公告)号：US4176170A

公开(公告)日：1979-11-27

申请号：US924188

申请日：1978-07-13

申请人： Horst M. Kasper ,  Benjamin Tell ,  Sigurd Wagner

发明人： Horst M. Kasper ,  Benjamin Tell ,  Sigurd Wagner

IPC分类号： C01B17/00 ,  C01B19/00 ,  H01M4/02 ,  H01M6/18

CPC分类号： C01B17/00 ,  C01B19/002 ,  H01M4/02 ,  H01M6/18 ,  C01P2006/40

摘要： Ionic conductivity in ternary chalcogenides of the form AB.sub.x C.sub.y, where A is a metallic atom with atomic number no greater than 55 which has a +1 oxidation state, B is a group III A metallic atom and C is a group VI A atom, has been observed. This ionic conductivity makes the compounds useful as components in electrochemical cells, e.g., electrolytes and electrodes.

摘要翻译： ABxCy形式的三元硫属化物中的离子电导率，其中A是具有+1氧化态的原子序数不大于55的金属原子，B是IIIA族金属原子，C是VIA原子， 观察到的。 该离子导电性使得化合物可用作电化学电池中的组分，例如电解质和电极。

公开(公告)号：US4108716A

公开(公告)日：1978-08-22

申请号：US752899

申请日：1976-12-22

申请人： Assunta Anna Pritchard ,  Sigurd Wagner

发明人： Assunta Anna Pritchard ,  Sigurd Wagner

IPC分类号： C09K13/04 ,  H01L21/461

CPC分类号： H01L21/461 ,  C09K13/04

摘要： A process for polishing both the cadmium and sulfur face of CdS using buffered HCl solutions has been found to produce very smooth crystal surfaces. Use of HCl solutions buffered to a pH between 2.2 and 2.8 to polish the cadmium face is quite effective. An equally effective polishing agent for the sulfur face is a HCl solution buffered to a pH between 0.7 and 1.3.

摘要翻译： 已经发现使用缓冲的HCl溶液对CdS的镉和硫面进行抛光的方法产生非常光滑的晶体表面。 缓冲到pH2.2和2.8之间的HCl溶液使用镉面来研磨是非常有效的。 用于硫面的同样有效的抛光剂是缓冲至0.7-1.3之间的pH的HCl溶液。

公开(公告)号：US3988172A

公开(公告)日：1976-10-26

申请号：US587042

申请日：1975-06-16

申请人： Klaus Jurgen Bachmann ,  Ernest Buehler ,  Joseph Leo Shay ,  Sigurd Wagner

发明人： Klaus Jurgen Bachmann ,  Ernest Buehler ,  Joseph Leo Shay ,  Sigurd Wagner

IPC分类号： H01L21/00 ,  H01L7/00 ,  H01L31/04

CPC分类号： H01L21/00 ,  Y10S148/003 ,  Y10S148/072 ,  Y10S148/079 ,  Y10S148/12

摘要： Solar cells showing improved efficiency, amounting to about 14 percent for overall solar power conversion, are obtained by annealing InP/CdS solar cells in a slightly reducing atmosphere for about 15 minutes in a temperature range preferably from about 550.degree. centrigrade to about 600.degree. centigrade. In an annealing temperature range from 400.degree. centigrade to 625.degree. centigrade, an inversely dependent adjustment of annealing time is found desirable. The atmosphere preferably comprises mainly a substantially inert component and typically comprises an H.sub.2 + N.sub.2 mixture, such as forming gas (15% H.sub.2 + 85% N.sub.2).

摘要翻译： 通过在稍微还原的气氛中将InP / CdS太阳能电池退火约15分钟，在优选约550摄氏度至约600摄氏度的温度范围内，可获得总体太阳能转换效率达到约14％的太阳能电池。 。 在退火温度范围从400摄氏度到625摄氏度之间，退火时间的反向调整是可取的。 气氛优选主要包括基本上惰性的组分，并且通常包含H 2 + N 2混合物，例如形成气体（15％H 2 + 85％N 2）。

公开(公告)号：US09391220B2

公开(公告)日：2016-07-12

申请号：US13367856

申请日：2012-02-07

申请人： Naveen Verma ,  Branko Glisic ,  James Sturm ,  Sigurd Wagner

发明人： Naveen Verma ,  Branko Glisic ,  James Sturm ,  Sigurd Wagner

IPC分类号： H01F38/14 ,  H02J4/00 ,  H01L31/0392

CPC分类号： H01L31/03926 ,  Y02E10/50 ,  Y10T29/49124

摘要： A system and method for interfacing large-area electronics with integrated circuit devices is provided. The system may be implemented in an electronic device including a large area electronic (LAE) device disposed on a substrate. An integrated circuit IC is disposed on the substrate. A non-contact interface is disposed on the substrate and coupled between the LAE device and the IC. The non-contact interface is configured to provide at least one of a data acquisition path or control path between the LAE device and the IC.

摘要翻译： 提供了一种用于将大面积电子器件与集成电路器件接口的系统和方法。 该系统可以在包括设置在基板上的大面积电子（LAE）装置的电子设备中实现。 集成电路IC设置在基板上。 非接触界面设置在衬底上并耦合在LAE器件和IC之间。 非接触接口被配置为提供LAE设备和IC之间的数据采集路径或控制路径中的至少一个。

公开(公告)号：US08933468B2

公开(公告)日：2015-01-13

申请号：US13422924

申请日：2012-03-16

申请人： Prashant Mandlik ,  Ruiqing Ma ,  Jeff Silvernail ,  Julia J. Brown ,  Lin Han ,  Sigurd Wagner ,  Luke Walski

发明人： Prashant Mandlik ,  Ruiqing Ma ,  Jeff Silvernail ,  Julia J. Brown ,  Lin Han ,  Sigurd Wagner ,  Luke Walski

IPC分类号： H01L29/18 ,  H01L33/00 ,  H01L27/32 ,  H01L25/075

CPC分类号： H01L51/5253 ,  H01L25/0753 ,  H01L27/3209 ,  H01L51/56 ,  H01L2251/566 ,  H01L2924/0002 ,  Y02E10/549 ,  Y02P70/521 ,  H01L2924/00

摘要： A first product may be provided that comprises a substrate having a first surface, a first side, and a first edge where the first surface meets the first side; and a device disposed over the substrate, the device having a second side, where at least a first portion of the second side is disposed within 3 mm from the first edge of the substrate. The first product may further comprise a first barrier film that covers at least a portion of the first edge of the substrate, at least a portion of the first side of the substrate, and at least the first portion of the second side of the device.

摘要翻译： 可以提供第一产品，其包括具有第一表面，第一侧和第一边缘与第一表面相交的第一边缘的基底; 以及设置在所述基板上的装置，所述装置具有第二侧，所述第二侧的至少第一部分设置在距所述基板的第一边缘3mm以内。 第一产品还可以包括覆盖基板的第一边缘的至少一部分，基板的第一侧的至少一部分以及装置的第二侧的至少第一部分的第一阻挡膜。