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    Positive o-quinone diazide photoresist containing base copolymer utilizing monomer having anhydride function and further monomer that increases etch resistance
    1.
    发明授权
    Positive o-quinone diazide photoresist containing base copolymer utilizing monomer having anhydride function and further monomer that increases etch resistance 失效
    含邻苯醌二叠氮化物光致抗蚀剂含有具有酸酐官能团的单体的基础共聚物和增加耐蚀性的其它单体

    公开(公告)号：US5360693A

    公开(公告)日：1994-11-01

    申请号：US59518

    申请日：1993-05-10

    申请人： Michael Sebald ,  Recai Sezi ,  Rainer Leuschner ,  Seigfried Birkle ,  Hellmut Ahhe

    发明人： Michael Sebald ,  Recai Sezi ,  Rainer Leuschner ,  Seigfried Birkle ,  Hellmut Ahhe

    IPC分类号： G03F7/023 ,  G03F7/075 ,  G03F15/06

    CPC分类号： G03F7/0233 ,  G03F7/0758

    摘要： An aqueous-alkaline developable photoresist suitable for a lithography in deep ultraviolet light and having a structural resolution in the sub-.mu.m range. The photoresist contains a developable base polymer that comprises anhydride functions that act as solubility-mediating groups and also contains a photo-active component. In addition to being constructed of monomers carrying anhydride groups, the base polymer can be constructed of further monomers that produce designationally defined properties in the photoresist, for example, exhibit resistance to plasma etching processes. The photoresist of the present invention is therefore very versatile.

    摘要翻译： 一种含水碱性可显影光致抗蚀剂，适用于深紫外光下的平版印刷，其结构分辨率在多个范围之内。 光致抗蚀剂包含可显影的基础聚合物，其包含作为溶解介导基团并且还含有光活性组分的酸酐官能团。 除了由负载酸酐基团的单体构成之外，基础聚合物可以由在光致抗蚀剂中产生指定性质的其它单体构成，例如显示出对等离子体蚀刻工艺的抗性。 因此，本发明的光刻胶是非常通用的。

    Photostructuring method
    2.
    发明授权
    Photostructuring method 失效
    光结构方法

    公开(公告)号：US5234794A

    公开(公告)日：1993-08-10

    申请号：US847881

    申请日：1992-03-10

    申请人： Michael Sebald ,  Rainer Leuschner ,  Recai Sezi ,  Siegfried Birkle ,  Hellmut Ahne

    发明人： Michael Sebald ,  Rainer Leuschner ,  Recai Sezi ,  Siegfried Birkle ,  Hellmut Ahne

    IPC分类号： G03F7/40

    CPC分类号： G03F7/405 ,  G03F7/40

    摘要： A simple method for diminishing the trench width in a photoresist structure to below the resolution limit is provided. A photoresist structure is produced and treated with an agent then contains a bulging constituent that reacts with functional groups of the photoresist structure. The bulging constituent causes a volume increase of the photoresist structure. The extent of the volume increase of the photoresist structures is controllable by varying various parameters.

    摘要翻译： 提供了一种用于将光致抗蚀剂结构中的沟槽宽度减小到分辨率极限以下的简单方法。 制备光致抗蚀剂结构并用试剂处理，然后含有与光致抗蚀剂结构的官能团反应的凸起成分。 凸起成分导致光致抗蚀剂结构的体积增加。 通过改变各种参数可以控制光致抗蚀剂结构体积增加的程度。

    Photosensitive composition
    6.
    发明授权
    Photosensitive composition 失效
    光敏组合物

    公开(公告)号：US5171656A

    公开(公告)日：1992-12-15

    申请号：US556014

    申请日：1990-07-20

    申请人： Michael Sebald ,  Juergen Beck ,  Rainer Leuschner ,  Recai Sezi ,  Hans J. Bestmann

    发明人： Michael Sebald ,  Juergen Beck ,  Rainer Leuschner ,  Recai Sezi ,  Hans J. Bestmann

    IPC分类号： G03F7/039 ,  G03F7/016 ,  G03F7/075 ,  H01L21/027

    CPC分类号： G03F7/0163

    摘要： Photosensitive compositions comprising a polymer and a photoactive constituent, which are able to be developed with aqueous, alkaline agents exhibit good bleaching properties in the DUV range, whereby the photoactive constituent has good solubility-inhibiting properties and does not evaporate during the drying process, when the photoactive constituent comprises diazo tetronic acid or a diazo tetronic acid derivative of the following structure: ##STR1## where the residues R are the same or different and signify H, alkyl, cycloalkyl, aryl or a silicon-containing residue.

    摘要翻译： 包含能够用水性碱性试剂显影的聚合物和光活性成分的光敏性组合物在DUV范围内表现出良好的漂白性能，由此光活性成分具有良好的溶解性抑制性能，并且在干燥过程中不会蒸发， 光活性组分包括重氮四氢酸或具有以下结构的重氮四氢酸衍生物：其中残基R相同或不同并且表示H，烷基，环烷基，芳基或含硅残基。

    Photostructuring process
    8.
    发明授权
    Photostructuring process 失效
    照片制作过程

    公开(公告)号：US5250375A

    公开(公告)日：1993-10-05

    申请号：US812585

    申请日：1991-12-20

    申请人： Michael Sebald ,  Juergen Beck ,  Rainer Leuschner ,  Recai Sezi ,  Siegfried Birkle ,  Hellmut Ahne ,  Eberhard Kuehn

    发明人： Michael Sebald ,  Juergen Beck ,  Rainer Leuschner ,  Recai Sezi ,  Siegfried Birkle ,  Hellmut Ahne ,  Eberhard Kuehn

    IPC分类号： G03F7/26 ,  G03F7/039 ,  G03F7/40 ,  H01L21/027 ,  G03C5/58

    CPC分类号： G03F7/40 ,  G03F7/039 ,  G03F7/405

    摘要： A process for producing structures in the submicron range is characterized by the following steps:a photoresist layer comprising a polymer constituent with functional groups, which are capable of reacting with primary or secondary amines, and N-blocked imide groups, a photoinitiator which releases an acid when irradiated and a suitable solvent is deposited on to a substrate;the photoresist layer is dried;the photoresist layer is exposed in an imagewise manner;the exposed photoresist layer is subjected to a temperature treatment;the photoresist layer treated in this manner is developed with an aqueous-alkaline or organic developing agent into a photoresist structure; andthe photoresist structure is treated with a chemical agent containing a primary or secondary amine; a defined dark field loss, is adjusted thereby during development in the range of between 20 and 100 nm.

    摘要翻译： 在亚微米范围内制造结构的方法的特征在于以下步骤：包含能与伯胺或仲胺反应的官能团的聚合物组分和N-封端的酰亚胺基的光致抗蚀剂层， 酸，并将合适的溶剂沉积在基材上; 干燥光致抗蚀剂层; 光致抗蚀剂层以成像方式曝光; 曝光的光刻胶层进行温度处理; 以这种方式处理的光致抗蚀剂层用含水碱性或有机显影剂显影成光致抗蚀剂结构; 并且用含有伯胺或仲胺的化学试剂处理光刻胶结构; 在20至100nm的范围内，在显影期间调节限定的暗场损耗。

    Method for the production of a bottom resist
    10.
    发明授权
    Method for the production of a bottom resist 失效
    生产底部抗蚀剂的方法

    公开(公告)号：US5512334A

    公开(公告)日：1996-04-30

    申请号：US301285

    申请日：1994-09-06

    申请人： Rainer Leuschner ,  Recai Sezi ,  Michael Sebald

    发明人： Rainer Leuschner ,  Recai Sezi ,  Michael Sebald

    IPC分类号： G03F7/039 ,  G03F7/038 ,  G03F7/09 ,  G03F7/095 ,  G03F7/11 ,  G03F7/26 ,  H01L21/027 ,  B05D3/06

    CPC分类号： G03F7/095 ,  G03F7/038 ,  G03F7/094

    摘要： A method for producing a bottom resist for a two-layer O.sub.2 /Reactive Ion Etching system which fulfills all the requirements set for such a resist. A varnish layer of a base polymer containing an aromatic, a cross-linking agent and an acid-forming agent is applied to a substrate. The varnish layer is flood-exposed to release a strong acid from the acid-forming agent in the surface region of the layer. This is followed by thermal curing.

    摘要翻译： 一种二层O2 /反应离子蚀刻系统的底层抗蚀剂的制造方法，其满足对这种抗蚀剂的所有要求。 将含有芳族，交联剂和成酸剂的基础聚合物的清漆层施加到基材上。 清漆层被暴露以从该层的表面区域中的酸形成剂释放强酸。 然后进行热固化。