公开(公告)号：US06245192B1

公开(公告)日：2001-06-12

申请号：US09343690

申请日：1999-06-30

申请人： Rajinder Dhindsa ,  Fangli Hao ,  Eric Lenz

发明人： Rajinder Dhindsa ,  Fangli Hao ,  Eric Lenz

IPC分类号： C23F102

CPC分类号： C23C16/45565 ,  C23C16/455 ,  C23C16/45572 ,  H01J37/3244

摘要： A gas distribution system for uniformly or non-uniformly distributing gas across the surface of a semiconductor substrate. The gas distribution system includes a support plate and a showerhead which are secured together to define a gas distribution chamber therebetween. A baffle assembly including one or more baffle plates is located within the gas distribution chamber. The baffle arrangement includes a first gas supply supplying process gas to a central portion of the baffle chamber and a second gas supply supplying a second process gas to a peripheral region of the baffle chamber. Because the pressure of the gas is greater at locations closer to the outlets of the first and second gas supplies, the gas pressure at the backside of the showerhead can be made more uniform than in the case with a single gas supply. In one arrangement, the first and second gas supplies open into a plenum between a top baffle plate and a temperature controlled support member wherein the plenum is divided into the central and peripheral regions by an O-ring. In a second arrangement, the first gas supply opens into the central region above an upper baffle plate and the second gas supply opens into the periphery of a plenum between the upper baffle plate and a lower baffle plate.

摘要翻译： 一种用于均匀或不均匀地分布气体跨越半导体衬底的表面的气体分配系统。 气体分配系统包括固定在一起以在其间限定气体分配室的支撑板和喷头。 包括一个或多个挡板的挡板组件位于气体分配室内。 挡板装置包括向挡板室的中心部分供应处理气体的第一气体供应源和向挡板室的周边区域供应第二处理气体的第二气体供应源。 因为在靠近第一和第二气体供应出口的位置处气体的压力较大，所以喷头背面的气体压力可以比单个气体供应的情况更均匀。 在一种布置中，第一和第二气体供应开放在顶部挡板和温度控制的支撑构件之间的增压室中，其中气室通过O形环分成中心区域和外围区域。 在第二种布置中，第一气体供应通向上挡板上方的中心区域，第二气体供应通道进入上挡板和下挡板之间的集气室的周边。

公开(公告)号：US06432831B1

公开(公告)日：2002-08-13

申请号：US09814972

申请日：2001-03-23

申请人： Rajinder Dhindsa ,  Fangli Hao ,  Eric Lenz

发明人： Rajinder Dhindsa ,  Fangli Hao ,  Eric Lenz

IPC分类号： H01L21302

摘要： A gas distribution system for uniformly or non-uniformly distributing gas across the surface of a semiconductor substrate. The gas distribution system includes a support plate and a showerhead which are secured together to define a gas distribution chamber therebetween. A baffle assembly including one or more baffle plates is located within the gas distribution chamber. The baffle arrangement includes a first gas supply supplying process gas to a central portion of the baffle chamber and a second gas supply supplying a second process gas to a peripheral region of the baffle chamber. Because the pressure of the gas is greater at locations closer to the outlets of the first and second gas supplies, the gas pressure at the backside of the showerhead can be made more uniform than in the case with a single gas supply. In one arrangement, the first and second gas supplies open into a plenum between a top baffle plate and a temperature controlled support member wherein the plenum is divided into the central and peripheral regions by an O-ring. In a second arrangement, the first gas supply opens into the central region above an upper baffle plate and the second gas supply opens into the periphery of a plenum between the upper baffle plate and a lower baffle plate.

公开(公告)号：US6123775A

公开(公告)日：2000-09-26

申请号：US343482

申请日：1999-06-30

申请人： Fangli Hao ,  Rajinder Dhindsa ,  Javad Pourhashemi

发明人： Fangli Hao ,  Rajinder Dhindsa ,  Javad Pourhashemi

IPC分类号： H05H1/46 ,  C23C16/44 ,  C23C16/455 ,  H01J37/32 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  C23C16/00 ,  C23F1/02

CPC分类号： C23C16/45572 ,  H01J37/3244 ,  H01J37/32522 ,  H01L21/67103

摘要： A component useful for a plasma reaction chamber includes a heat sink such as a temperature-controlled support member and a heated member such as an electrically powered showerhead electrode. The showerhead electrode is peripherally secured to the support member to enclose a gas distribution chamber between a top surface of the electrode and a bottom surface of the support member. A heat transfer member extends between the electrode and the support member and transfers heat from an area of temperature buildup on the top surface of the showerhead electrode to the bottom surface of the support member in order to control the temperature distribution across the showerhead electrode.

摘要翻译： 用于等离子体反应室的部件包括诸如温度控制的支撑构件的散热器和诸如电动喷头电极的加热构件。 淋浴头电极周边地固定到支撑构件上以将气体分配室封闭在电极的顶表面和支撑构件的底表面之间。 传热构件在电极和支撑构件之间延伸并且将热量从喷淋头电极的顶表面上的温度积分区域传递到支撑构件的底表面，以便控制喷头电极两端的温度分布。

公开(公告)号：US06415736B1

公开(公告)日：2002-07-09

申请号：US09343481

申请日：1999-06-30

申请人： Fangli Hao ,  Rajinder Dhindsa

发明人： Fangli Hao ,  Rajinder Dhindsa

IPC分类号： C23C1600

CPC分类号： H01L21/67017

摘要： A gas distribution system for semiconductor processing includes a contoured surface to achieve a desired gas distribution on the backside of a showerhead. The system can include one or more gas supplies opening into a plenum between a baffle plate and a temperature-controlled support member. The baffle plate can have a nonuniform thickness and geometry-controlled openings to achieve a desired gas distribution. In one arrangement the baffle plate is conical in shape with uniform diameter holes extending different distances through the baffle plate to achieve a uniform pressure of gas through outlets in a planar bottom surface of the baffle plate. In another arrangement, the holes have progressively larger diameters in a direction away from the location of the centrally located gas supply outlet. The shape of the baffle plate and/or configuration of the holes can be designed to achieve a desired gas pressure distribution.

摘要翻译： 用于半导体处理的气体分配系统包括在喷头的背面上实现期望的气体分布的轮廓表面。 该系统可以包括一个或多个气体供应器，其通向挡板和受温度控制的支撑构件之间的通风室。 挡板可以具有不均匀的厚度和几何形状控制的开口以实现期望的气体分布。 在一种布置中，挡板是圆锥形的，具有均匀直径的孔，其延伸穿过挡板的不同距离，以在挡板平面底表面中的出口实现均匀的气体压力。 在另一种布置中，孔在远离中心位置的气体供应出口的位置的方向上具有逐渐更大的直径。 挡板的形状和/或孔的构造可以被设计成实现期望的气体压力分布。

公开(公告)号：US06712929B1

公开(公告)日：2004-03-30

申请号：US09634806

申请日：2000-08-08

申请人： Eric Lenz ,  Albert R. Ellingboe ,  Fangli Hao

发明人： Eric Lenz ,  Albert R. Ellingboe ,  Fangli Hao

IPC分类号： C23C1600

CPC分类号： H01L21/67069 ,  H01J37/32458

摘要： A vacuum chamber with a cover with a first section, a second section, and a pocket between the first section and second section is provided. The vacuum chamber has a main cavity to which the first section is adjacent. The vacuum chamber may be used for plasma processing, which may require a critical element to be supported by the first section. The pocket is in fluid communication with the main cavity. When a vacuum is created in the main cavity, the pressure is also reduced in the pocket. As a result, the second section of the cover is deformed by the vacuum in the pocket. However, the vacuum in the pocket helps to prevent the first section from deforming, providing better support for the critical element.

摘要翻译： 提供具有盖的真空室，其具有在第一部分和第二部分之间的第一部分，第二部分和凹穴。 真空室具有第一部分相邻的主腔。 真空室可用于等离子体处理，其可能需要由第一部分支撑的关键元件。 口袋与主腔流体连通。 当在主腔中产生真空时，口袋中的压力也降低。 结果，盖的第二部分通过袋中的真空而变形。 然而，口袋中的真空有助于防止第一部分变形，为关键元件提供更好的支撑。

公开(公告)号：US06433484B1

公开(公告)日：2002-08-13

申请号：US09637736

申请日：2000-08-11

申请人： Fangli Hao ,  Eric Lenz ,  Bruno Morel

发明人： Fangli Hao ,  Eric Lenz ,  Bruno Morel

IPC分类号： H01G724

CPC分类号： H01J37/32449 ,  H01J37/32623

摘要： A plasma processing chamber is provided which provides improved wafer area pressure control. The plasma processing chamber is a vacuum chamber with a device connected for generating and sustaining a plasma. Part of this device would be an etchant gas source and an exhaust port. A confinement ring defines an area above a wafer. The wafer area pressure is dependent on the pressure drop across the confinement ring. The confinement ring is part of a confinement device that provides wafer area pressure control greater than 40%. Such a confinement device may be a fixed vertical restriction ring in addition to the confinement ring, where the confinement ring is adjustable. In the alternative, three adjustable confinement rings may be used to provide the desired wafer area pressure control.

摘要翻译： 提供等离子体处理室，其提供改进的晶片面积压力控制。 等离子体处理室是具有连接用于产生和维持等离子体的装置的真空室。 该装置的一部分将是蚀刻剂气源和排气口。 限制环限定晶片上方的区域。 晶片面积压力取决于限制环上的压降。 限制环是限制装置的一部分，其提供超过40％的晶片面积压力控制。 除了限制环之外，这种限制装置可以是固定的垂直限制环，其中限制环是可调节的。 在替代方案中，可以使用三个可调约束环来提供期望的晶片面积压力控制。

公开(公告)号：US06949204B1

公开(公告)日：2005-09-27

申请号：US10771112

申请日：2004-02-02

申请人： Eric Lenz ,  Albert R. Ellingboe ,  Fangli Hao

发明人： Eric Lenz ,  Albert R. Ellingboe ,  Fangli Hao

IPC分类号： H01J37/32 ,  H01L21/00 ,  C23F1/00 ,  C23C16/00 ,  H01L31/306

CPC分类号： H01L21/67069 ,  H01J37/32458

摘要： A vacuum chamber with a cover with a first section, a second section, and a pocket between the first section and second section is provided. The vacuum chamber has a main cavity to which the first section is adjacent. The vacuum chamber may be used for plasma processing, which may require a critical element to be supported by the first section. The pocket is in fluid communication with the main cavity. When a vacuum is created in the main cavity, the pressure is also reduced in the pocket. As a result, the second section of the cover is deformed by the vacuum in the pocket. However, the vacuum in the pocket helps to prevent the first section from deforming, providing better support for the critical element.

摘要翻译： 提供具有盖的真空室，其具有在第一部分和第二部分之间的第一部分，第二部分和凹穴。 真空室具有第一部分相邻的主腔。 真空室可用于等离子体处理，其可能需要由第一部分支撑的关键元件。 口袋与主腔流体连通。 当在主腔中产生真空时，口袋中的压力也降低。 结果，盖的第二部分通过袋中的真空而变形。 然而，口袋中的真空有助于防止第一部分变形，为关键元件提供更好的支撑。

公开(公告)号：US20060032736A1

公开(公告)日：2006-02-16

申请号：US11200886

申请日：2005-08-09

申请人： Eric Lenz ,  Albert Ellingboe ,  Fangli Hao

发明人： Eric Lenz ,  Albert Ellingboe ,  Fangli Hao

IPC分类号： C23C14/32

CPC分类号： H01J37/32082 ,  H01J37/32458

摘要： A vacuum chamber with a cover with a first section, a second section, and a pocket between the first section and second section is provided. The vacuum chamber has a main cavity to which the first section is adjacent. The vacuum chamber may be used for plasma processing, which may require a critical element to be supported by the first section. The pocket is in fluid communication with the main cavity. When a vacuum is created in the main cavity, the pressure is also reduced in the pocket. As a result, the second section of the cover is deformed by the vacuum in the pocket. However, the vacuum in the pocket helps to prevent the first section from deforming, providing better support for the critical element.

摘要翻译： 提供具有盖的真空室，其具有在第一部分和第二部分之间的第一部分，第二部分和凹穴。 真空室具有第一部分相邻的主腔。 真空室可用于等离子体处理，其可能需要由第一部分支撑的关键元件。 口袋与主腔流体连通。 当在主腔中产生真空时，口袋中的压力也降低。 结果，盖的第二部分通过袋中的真空而变形。 然而，口袋中的真空有助于防止第一部分变形，为关键元件提供更好的支撑。

公开(公告)号：US20060065523A1

公开(公告)日：2006-03-30

申请号：US10957443

申请日：2004-09-30

申请人： Fangli Hao ,  John Daugherty ,  James Tappan

发明人： Fangli Hao ,  John Daugherty ,  James Tappan

IPC分类号： C23C14/00 ,  C23C14/32

CPC分类号： H01J37/3244 ,  H01J37/32082

摘要： In a plasma processing system, an integrated gas flow control assembly for connecting a gas distribution system to a multi-zone injector is disclosed. The assembly includes a first set of channels connecting the gas distribution system to a first valve assembly with a first flow rate, a second valve assembly with a second flow rate, a third flow assembly with a third flow rate, and a fourth flow assembly with a fourth flow rate, wherein when the first valve assembly is substantially open, the third flow rate is less than the first flow rate, and wherein when the second valve assembly is substantially open, the fourth flow rate is less than the second flow rate. The assembly also includes a second set of channels for connecting the third flow assembly and the first valve assembly to a first multi-zone injector zone. The assembly further includes a third set of channels for connecting the fourth flow assembly and the second valve assembly to a second multi-zone injector zone. Wherein if the first valve assembly is closed, a first multi-zone injector zone flow rate is about the third flow rate, and wherein if the second valve assembly is closed, a second multi-zone injector zone flow rate is about the fourth flow rate.

摘要翻译： 在等离子体处理系统中，公开了一种用于将气体分配系统连接到多区域喷射器的集成气体流量控制组件。 组件包括将气体分配系统连接到具有第一流量的第一阀组件的第一组通道，具有第二流量的第二阀组件，具有第三流量的第三流量组件和具有第三流量的第四流量组件， 第四流量，其中当第一阀组件基本上打开时，第三流量小于第一流量，并且其中当第二阀组件基本上打开时，第四流量小于第二流量。 组件还包括用于将第三流动组件和第一阀组件连接到第一多区域注入器区域的第二组通道。 组件还包括用于将第四流动组件和第二阀组件连接到第二多区域注入器区域的第三组通道。 其中，如果第一阀组件关闭，则第一多区域喷射器区域流速约为第三流量，并且其中如果第二阀组件关闭，则第二多区域喷射器区域流速约为第四流量 。

公开(公告)号：US06922867B1

公开(公告)日：2005-08-02

申请号：US10210573

申请日：2002-07-31

申请人： Fangli Hao

发明人： Fangli Hao

IPC分类号： A47L5/14 ,  B08B5/02 ,  B08B9/08 ,  H01L21/00 ,  H01L21/673

CPC分类号： H01L21/67393 ,  B08B5/02 ,  B08B9/08 ,  H01L21/67017

摘要： This invention is an apparatus for purging unwanted gasses from the Front Opening Unified Pod (FOUP). It consists of a purging wand which is inserted into the chamber for an optimal purge. The purging wand moves back and forth along a simple axis activated by a linkage robot. The wand is carried along a track with the FOUP and when its reaches its optimal position inside the FOUP, the source of cleaning gas is allowed to flow into and spray out of the wand thereby purging the FOUP. After the purging is completed, the linkage robot withdraws the wand from within the FOUP to its original position.

摘要翻译： 本发明是用于从前开口统一荚（FOUP）清除不需要的气体的装置。 它由吹扫棒组成，其被插入室中以获得最佳清洗。 吹扫棒沿着由联动机器人启动的简单轴线来回移动。 魔杖与FOUP一起沿着轨道运送，并且当其在FOUP内达到最佳位置时，清洁气体源被允许流入并喷出杖，从而清除FOUP。 清洗完成后，联动机构将FOUP中的魔杖提回到原来的位置。