公开(公告)号：US06245192B1

公开(公告)日：2001-06-12

申请号：US09343690

申请日：1999-06-30

申请人： Rajinder Dhindsa ,  Fangli Hao ,  Eric Lenz

发明人： Rajinder Dhindsa ,  Fangli Hao ,  Eric Lenz

IPC分类号： C23F102

CPC分类号： C23C16/45565 ,  C23C16/455 ,  C23C16/45572 ,  H01J37/3244

摘要： A gas distribution system for uniformly or non-uniformly distributing gas across the surface of a semiconductor substrate. The gas distribution system includes a support plate and a showerhead which are secured together to define a gas distribution chamber therebetween. A baffle assembly including one or more baffle plates is located within the gas distribution chamber. The baffle arrangement includes a first gas supply supplying process gas to a central portion of the baffle chamber and a second gas supply supplying a second process gas to a peripheral region of the baffle chamber. Because the pressure of the gas is greater at locations closer to the outlets of the first and second gas supplies, the gas pressure at the backside of the showerhead can be made more uniform than in the case with a single gas supply. In one arrangement, the first and second gas supplies open into a plenum between a top baffle plate and a temperature controlled support member wherein the plenum is divided into the central and peripheral regions by an O-ring. In a second arrangement, the first gas supply opens into the central region above an upper baffle plate and the second gas supply opens into the periphery of a plenum between the upper baffle plate and a lower baffle plate.

摘要翻译： 一种用于均匀或不均匀地分布气体跨越半导体衬底的表面的气体分配系统。 气体分配系统包括固定在一起以在其间限定气体分配室的支撑板和喷头。 包括一个或多个挡板的挡板组件位于气体分配室内。 挡板装置包括向挡板室的中心部分供应处理气体的第一气体供应源和向挡板室的周边区域供应第二处理气体的第二气体供应源。 因为在靠近第一和第二气体供应出口的位置处气体的压力较大，所以喷头背面的气体压力可以比单个气体供应的情况更均匀。 在一种布置中，第一和第二气体供应开放在顶部挡板和温度控制的支撑构件之间的增压室中，其中气室通过O形环分成中心区域和外围区域。 在第二种布置中，第一气体供应通向上挡板上方的中心区域，第二气体供应通道进入上挡板和下挡板之间的集气室的周边。

公开(公告)号：US06432831B1

公开(公告)日：2002-08-13

申请号：US09814972

申请日：2001-03-23

申请人： Rajinder Dhindsa ,  Fangli Hao ,  Eric Lenz

发明人： Rajinder Dhindsa ,  Fangli Hao ,  Eric Lenz

IPC分类号： H01L21302

摘要： A gas distribution system for uniformly or non-uniformly distributing gas across the surface of a semiconductor substrate. The gas distribution system includes a support plate and a showerhead which are secured together to define a gas distribution chamber therebetween. A baffle assembly including one or more baffle plates is located within the gas distribution chamber. The baffle arrangement includes a first gas supply supplying process gas to a central portion of the baffle chamber and a second gas supply supplying a second process gas to a peripheral region of the baffle chamber. Because the pressure of the gas is greater at locations closer to the outlets of the first and second gas supplies, the gas pressure at the backside of the showerhead can be made more uniform than in the case with a single gas supply. In one arrangement, the first and second gas supplies open into a plenum between a top baffle plate and a temperature controlled support member wherein the plenum is divided into the central and peripheral regions by an O-ring. In a second arrangement, the first gas supply opens into the central region above an upper baffle plate and the second gas supply opens into the periphery of a plenum between the upper baffle plate and a lower baffle plate.

公开(公告)号：US6123775A

公开(公告)日：2000-09-26

申请号：US343482

申请日：1999-06-30

申请人： Fangli Hao ,  Rajinder Dhindsa ,  Javad Pourhashemi

发明人： Fangli Hao ,  Rajinder Dhindsa ,  Javad Pourhashemi

IPC分类号： H05H1/46 ,  C23C16/44 ,  C23C16/455 ,  H01J37/32 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  C23C16/00 ,  C23F1/02

CPC分类号： C23C16/45572 ,  H01J37/3244 ,  H01J37/32522 ,  H01L21/67103

摘要： A component useful for a plasma reaction chamber includes a heat sink such as a temperature-controlled support member and a heated member such as an electrically powered showerhead electrode. The showerhead electrode is peripherally secured to the support member to enclose a gas distribution chamber between a top surface of the electrode and a bottom surface of the support member. A heat transfer member extends between the electrode and the support member and transfers heat from an area of temperature buildup on the top surface of the showerhead electrode to the bottom surface of the support member in order to control the temperature distribution across the showerhead electrode.

摘要翻译： 用于等离子体反应室的部件包括诸如温度控制的支撑构件的散热器和诸如电动喷头电极的加热构件。 淋浴头电极周边地固定到支撑构件上以将气体分配室封闭在电极的顶表面和支撑构件的底表面之间。 传热构件在电极和支撑构件之间延伸并且将热量从喷淋头电极的顶表面上的温度积分区域传递到支撑构件的底表面，以便控制喷头电极两端的温度分布。

公开(公告)号：US06415736B1

公开(公告)日：2002-07-09

申请号：US09343481

申请日：1999-06-30

申请人： Fangli Hao ,  Rajinder Dhindsa

发明人： Fangli Hao ,  Rajinder Dhindsa

IPC分类号： C23C1600

CPC分类号： H01L21/67017

摘要： A gas distribution system for semiconductor processing includes a contoured surface to achieve a desired gas distribution on the backside of a showerhead. The system can include one or more gas supplies opening into a plenum between a baffle plate and a temperature-controlled support member. The baffle plate can have a nonuniform thickness and geometry-controlled openings to achieve a desired gas distribution. In one arrangement the baffle plate is conical in shape with uniform diameter holes extending different distances through the baffle plate to achieve a uniform pressure of gas through outlets in a planar bottom surface of the baffle plate. In another arrangement, the holes have progressively larger diameters in a direction away from the location of the centrally located gas supply outlet. The shape of the baffle plate and/or configuration of the holes can be designed to achieve a desired gas pressure distribution.

摘要翻译： 用于半导体处理的气体分配系统包括在喷头的背面上实现期望的气体分布的轮廓表面。 该系统可以包括一个或多个气体供应器，其通向挡板和受温度控制的支撑构件之间的通风室。 挡板可以具有不均匀的厚度和几何形状控制的开口以实现期望的气体分布。 在一种布置中，挡板是圆锥形的，具有均匀直径的孔，其延伸穿过挡板的不同距离，以在挡板平面底表面中的出口实现均匀的气体压力。 在另一种布置中，孔在远离中心位置的气体供应出口的位置的方向上具有逐渐更大的直径。 挡板的形状和/或孔的构造可以被设计成实现期望的气体压力分布。

公开(公告)号：US20110024046A1

公开(公告)日：2011-02-03

申请号：US12905046

申请日：2010-10-14

申请人： Douglas Keil ,  Lumin Li ,  Reza Sadjadi ,  Eric Hudson ,  Eric Lenz ,  Rajinder Dhindsa

发明人： Douglas Keil ,  Lumin Li ,  Reza Sadjadi ,  Eric Hudson ,  Eric Lenz ,  Rajinder Dhindsa

IPC分类号： H01L21/306

CPC分类号： H01J37/32183 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32532

摘要： An apparatus is provided for semiconductor wafer plasma processing. The apparatus includes a chamber having a lower electrode and an upper electrode disposed therein. The lower electrode is defined to transmit a radiofrequency current through the chamber to generate a plasma within the chamber. The lower electrode is also defined to support a semiconductor wafer in exposure to the plasma. The upper electrode is disposed above and in a spaced apart relationship with the lower electrode. The upper electrode is defined by a doped semiconductor material. A doping concentration within the upper electrode varies radially from a center to a periphery of the upper electrode. The electric potential of the upper electrode influences an electric potential of the plasma within the chamber.

摘要翻译： 提供了一种用于半导体晶片等离子体处理的装置。 该装置包括具有下电极和设置在其中的上电极的腔室。 下电极被定义为传输射频电流通过腔室以在腔室内产生等离子体。 下电极也被限定为支持暴露于等离子体的半导体晶片。 上电极设置在下电极的上方并与之隔开的关系。 上电极由掺杂的半导体材料限定。 上电极内的掺杂浓度从上电极的中心向周边径向变化。 上电极的电位影响室内等离子体的电位。

公开(公告)号：US07393432B2

公开(公告)日：2008-07-01

申请号：US10953229

申请日：2004-09-29

申请人： Rajinder Dhindsa ,  Felix Kozakevich ,  Eric Lenz ,  Russell Martin

发明人： Rajinder Dhindsa ,  Felix Kozakevich ,  Eric Lenz ,  Russell Martin

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/00

CPC分类号： H05H1/46 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32568

摘要： An arrangement in a plasma processing system for selectively providing an RF grounding path between an electrode and ground. The arrangement includes an RF conduction path structure and an annular structure. The annular structure and the RF conduction path structure having two relative positions relative to one another. A first relative position of the two relative positions is characterized by the annular structure electrically coupling with the RF conduction path structure to provide a ground to the RF conduction path structure. A second relative position of the two relative positions is characterized by the annular structure being electrically uncoupled from the RF conduction path.

摘要翻译： 等离子体处理系统中的布置，用于选择性地提供电极和地面之间的RF接地路径。 该装置包括RF传导路径结构和环形结构。 环形结构和RF传导路径结构具有相对于彼此的两个相对位置。 两个相对位置的第一相对位置的特征在于环形结构与RF传导路径结构电耦合以提供到RF传导路径结构的接地。 两个相对位置的第二相对位置的特征在于环形结构与RF传导路径电耦合。

公开(公告)号：US06391787B1

公开(公告)日：2002-05-21

申请号：US09689845

申请日：2000-10-13

申请人： Rajinder Dhindsa ,  Mukund Srinivasan ,  Aaron Eppler ,  Eric Lenz

发明人： Rajinder Dhindsa ,  Mukund Srinivasan ,  Aaron Eppler ,  Eric Lenz

IPC分类号： H01L2120

CPC分类号： H01J37/32009 ,  H01J37/3244 ,  Y10T156/10

摘要： A plasma discharge electrode having a front surface with a central portion thereof including gas outlets discharging a process gas which forms a plasma and a peripheral portion substantially surrounding the gas outlets. The peripheral portion has at least one step for controlling a density of the plasma formed by the electrode. The electrode can be used as the grounded upper electrode in a parallel plate plasma processing apparatus such as a plasma etching apparatus. The geometric features of the step and of a corresponding edge ring on the lower electrode can be varied to achieve the desired etch rate profile across a wafer surface.

公开(公告)号：US08317968B2

公开(公告)日：2012-11-27

申请号：US10835456

申请日：2004-04-30

申请人： Rajinder Dhindsa ,  Eric Lenz

发明人： Rajinder Dhindsa ,  Eric Lenz

IPC分类号： H01L21/00 ,  C23C16/00

CPC分类号： H01J21/36 ,  H01J37/32009 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32724 ,  H01L21/306

摘要： A plasma processing apparatus includes a gas distribution member which supplies a process gas and radio frequency (RF) power to a showerhead electrode. The gas distribution member can include multiple gas passages which supply the same process gas or different process gases at the same or different flow rates to one or more plenums at the backside of the showerhead electrode. The gas distribution member provides a desired process gas distribution to be achieved across a semiconductor substrate processed in a gap between the showerhead electrode and a bottom electrode on which the substrate is supported.

摘要翻译： 一种等离子体处理装置，包括向喷头电极供给处理气体和射频（RF）功率的气体分配部件。 气体分配构件可以包括多个气体通道，其以相同或不同的流速将相同的处理气体或不同的处理气体提供给喷头电极的后侧的一个或多个气室。 气体分配构件提供了要在喷头电极和其上支撑衬底的底部电极之间的间隙中处理的半导体衬底上实现的期望的工艺气体分布。

公开(公告)号：US20090174983A1

公开(公告)日：2009-07-09

申请号：US12405906

申请日：2009-03-17

申请人： Rajinder Dhindsa ,  Eric Lenz ,  Lumin Li ,  Felix Kozakevich

发明人： Rajinder Dhindsa ,  Eric Lenz ,  Lumin Li ,  Felix Kozakevich

IPC分类号： H01L21/683

CPC分类号： H01L21/6833 ,  H02N13/00

摘要： An electrostatic chuck assembly having a dielectric material and/or having a cavity with varying thickness, profile and/or shape is disclosed. The electrostatic chuck assembly includes a conductive support and an electrostatic chuck ceramic layer. A dielectric layer or insert is located between the conductive support and an electrostatic chuck ceramic layer. A cavity is located in a seating surface of the electrostatic chuck ceramic layer. An embedded pole pattern can be optionally incorporated in the electrostatic chuck assembly. Methods of manufacturing the electrostatic chuck assembly are disclosed as are methods to improve the uniformity of a flux field above a workpiece during a plasma processing process.

摘要翻译： 公开了具有介电材料和/或具有变化的厚度，型材和/或形状的空腔的静电卡盘组件。 静电卡盘组件包括导电支架和静电卡盘陶瓷层。 电介质层或插入件位于导电支架和静电卡盘陶瓷层之间。 空腔位于静电卡盘陶瓷层的座面上。 可以可选地将嵌入式极图案并入静电卡盘组件中。 公开了制造静电卡盘组件的方法，是在等离子体处理过程中改进工件上方的磁通场的均匀性的方法。

公开(公告)号：US20080006205A1

公开(公告)日：2008-01-10

申请号：US11456545

申请日：2006-07-10

申请人： Douglas Keil ,  Lumin Li ,  Reza Sadjadi ,  Eric Hudson ,  Eric Lenz ,  Rajinder Dhindsa

发明人： Douglas Keil ,  Lumin Li ,  Reza Sadjadi ,  Eric Hudson ,  Eric Lenz ,  Rajinder Dhindsa

IPC分类号： C23F1/00 ,  C23C16/00

CPC分类号： H01J37/32183 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32532

摘要： An apparatus is provided for semiconductor wafer plasma processing. The apparatus includes a chamber having a lower electrode and an upper electrode disposed therein. The lower electrode is defined to transmit a radiofrequency current through the chamber to generate a plasma within the chamber. The upper electrode is disposed above the lower electrode and is electrically isolated from the chamber. A voltage source is connected to the upper electrode. The voltage source is defined to control an electric potential of the upper electrode relative to the chamber. The electric potential of the upper electrode as controlled by the voltage source is capable of influencing an electric potential of the plasma to be generated between the lower and upper electrodes.

摘要翻译： 提供了一种用于半导体晶片等离子体处理的装置。 该装置包括具有下电极和设置在其中的上电极的腔室。 下电极被定义为传输射频电流通过腔室以在腔室内产生等离子体。 上电极设置在下电极的上方，并与腔电隔离。 电压源连接到上电极。 电压源被定义为控制上电极相对于腔室的电位。 由电压源控制的上电极的电位能够影响在下电极和上电极之间产生的等离子体的电位。