公开(公告)号：US6123775A

公开(公告)日：2000-09-26

申请号：US343482

申请日：1999-06-30

申请人： Fangli Hao ,  Rajinder Dhindsa ,  Javad Pourhashemi

发明人： Fangli Hao ,  Rajinder Dhindsa ,  Javad Pourhashemi

IPC分类号： H05H1/46 ,  C23C16/44 ,  C23C16/455 ,  H01J37/32 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  C23C16/00 ,  C23F1/02

CPC分类号： C23C16/45572 ,  H01J37/3244 ,  H01J37/32522 ,  H01L21/67103

摘要： A component useful for a plasma reaction chamber includes a heat sink such as a temperature-controlled support member and a heated member such as an electrically powered showerhead electrode. The showerhead electrode is peripherally secured to the support member to enclose a gas distribution chamber between a top surface of the electrode and a bottom surface of the support member. A heat transfer member extends between the electrode and the support member and transfers heat from an area of temperature buildup on the top surface of the showerhead electrode to the bottom surface of the support member in order to control the temperature distribution across the showerhead electrode.

摘要翻译： 用于等离子体反应室的部件包括诸如温度控制的支撑构件的散热器和诸如电动喷头电极的加热构件。 淋浴头电极周边地固定到支撑构件上以将气体分配室封闭在电极的顶表面和支撑构件的底表面之间。 传热构件在电极和支撑构件之间延伸并且将热量从喷淋头电极的顶表面上的温度积分区域传递到支撑构件的底表面，以便控制喷头电极两端的温度分布。

公开(公告)号：US06245192B1

公开(公告)日：2001-06-12

申请号：US09343690

申请日：1999-06-30

申请人： Rajinder Dhindsa ,  Fangli Hao ,  Eric Lenz

发明人： Rajinder Dhindsa ,  Fangli Hao ,  Eric Lenz

IPC分类号： C23F102

CPC分类号： C23C16/45565 ,  C23C16/455 ,  C23C16/45572 ,  H01J37/3244

摘要： A gas distribution system for uniformly or non-uniformly distributing gas across the surface of a semiconductor substrate. The gas distribution system includes a support plate and a showerhead which are secured together to define a gas distribution chamber therebetween. A baffle assembly including one or more baffle plates is located within the gas distribution chamber. The baffle arrangement includes a first gas supply supplying process gas to a central portion of the baffle chamber and a second gas supply supplying a second process gas to a peripheral region of the baffle chamber. Because the pressure of the gas is greater at locations closer to the outlets of the first and second gas supplies, the gas pressure at the backside of the showerhead can be made more uniform than in the case with a single gas supply. In one arrangement, the first and second gas supplies open into a plenum between a top baffle plate and a temperature controlled support member wherein the plenum is divided into the central and peripheral regions by an O-ring. In a second arrangement, the first gas supply opens into the central region above an upper baffle plate and the second gas supply opens into the periphery of a plenum between the upper baffle plate and a lower baffle plate.

摘要翻译： 一种用于均匀或不均匀地分布气体跨越半导体衬底的表面的气体分配系统。 气体分配系统包括固定在一起以在其间限定气体分配室的支撑板和喷头。 包括一个或多个挡板的挡板组件位于气体分配室内。 挡板装置包括向挡板室的中心部分供应处理气体的第一气体供应源和向挡板室的周边区域供应第二处理气体的第二气体供应源。 因为在靠近第一和第二气体供应出口的位置处气体的压力较大，所以喷头背面的气体压力可以比单个气体供应的情况更均匀。 在一种布置中，第一和第二气体供应开放在顶部挡板和温度控制的支撑构件之间的增压室中，其中气室通过O形环分成中心区域和外围区域。 在第二种布置中，第一气体供应通向上挡板上方的中心区域，第二气体供应通道进入上挡板和下挡板之间的集气室的周边。

公开(公告)号：US06415736B1

公开(公告)日：2002-07-09

申请号：US09343481

申请日：1999-06-30

申请人： Fangli Hao ,  Rajinder Dhindsa

发明人： Fangli Hao ,  Rajinder Dhindsa

IPC分类号： C23C1600

CPC分类号： H01L21/67017

摘要： A gas distribution system for semiconductor processing includes a contoured surface to achieve a desired gas distribution on the backside of a showerhead. The system can include one or more gas supplies opening into a plenum between a baffle plate and a temperature-controlled support member. The baffle plate can have a nonuniform thickness and geometry-controlled openings to achieve a desired gas distribution. In one arrangement the baffle plate is conical in shape with uniform diameter holes extending different distances through the baffle plate to achieve a uniform pressure of gas through outlets in a planar bottom surface of the baffle plate. In another arrangement, the holes have progressively larger diameters in a direction away from the location of the centrally located gas supply outlet. The shape of the baffle plate and/or configuration of the holes can be designed to achieve a desired gas pressure distribution.

摘要翻译： 用于半导体处理的气体分配系统包括在喷头的背面上实现期望的气体分布的轮廓表面。 该系统可以包括一个或多个气体供应器，其通向挡板和受温度控制的支撑构件之间的通风室。 挡板可以具有不均匀的厚度和几何形状控制的开口以实现期望的气体分布。 在一种布置中，挡板是圆锥形的，具有均匀直径的孔，其延伸穿过挡板的不同距离，以在挡板平面底表面中的出口实现均匀的气体压力。 在另一种布置中，孔在远离中心位置的气体供应出口的位置的方向上具有逐渐更大的直径。 挡板的形状和/或孔的构造可以被设计成实现期望的气体压力分布。

公开(公告)号：US06432831B1

公开(公告)日：2002-08-13

申请号：US09814972

申请日：2001-03-23

申请人： Rajinder Dhindsa ,  Fangli Hao ,  Eric Lenz

发明人： Rajinder Dhindsa ,  Fangli Hao ,  Eric Lenz

IPC分类号： H01L21302

摘要： A gas distribution system for uniformly or non-uniformly distributing gas across the surface of a semiconductor substrate. The gas distribution system includes a support plate and a showerhead which are secured together to define a gas distribution chamber therebetween. A baffle assembly including one or more baffle plates is located within the gas distribution chamber. The baffle arrangement includes a first gas supply supplying process gas to a central portion of the baffle chamber and a second gas supply supplying a second process gas to a peripheral region of the baffle chamber. Because the pressure of the gas is greater at locations closer to the outlets of the first and second gas supplies, the gas pressure at the backside of the showerhead can be made more uniform than in the case with a single gas supply. In one arrangement, the first and second gas supplies open into a plenum between a top baffle plate and a temperature controlled support member wherein the plenum is divided into the central and peripheral regions by an O-ring. In a second arrangement, the first gas supply opens into the central region above an upper baffle plate and the second gas supply opens into the periphery of a plenum between the upper baffle plate and a lower baffle plate.

公开(公告)号：US09928995B2

公开(公告)日：2018-03-27

申请号：US12820020

申请日：2010-06-21

申请人： Andreas Fischer ,  Rajinder Dhindsa

发明人： Andreas Fischer ,  Rajinder Dhindsa

IPC分类号： B23P6/00 ,  H01J37/32

CPC分类号： H01J37/32495 ,  H01J37/32082 ,  H01J37/32623 ,  Y10T29/49718

摘要： A method for configuring a plasma processing chamber for preventing a plasma un-confinement event during processing of a substrate from occurring outside of a confined plasma sustaining region is provided. The confined plasma sustaining region is defined by a set of confinement rings surrounding a bottom portion of an electrode is provided. The method includes determining a worst-case Debye length for a plasma generated in the plasma processing chamber during the processing. The method also includes performing at least one of adjusting gaps between any pair of adjacent confinement rings and adding at least one additional confinement ring to ensure that a gap between the any pair of adjacent confinement rings is less than the worst-case Debye length.

公开(公告)号：US09230779B2

公开(公告)日：2016-01-05

申请号：US13423279

申请日：2012-03-19

申请人： Sang Ki Nam ,  Rajinder Dhindsa

发明人： Sang Ki Nam ,  Rajinder Dhindsa

IPC分类号： H01J37/32 ,  C23C16/44 ,  C23C16/455 ,  C23C16/509 ,  A23G3/26 ,  B05B12/00 ,  B05B13/04 ,  H01L21/67

CPC分类号： H01J37/32183 ,  A23G3/26 ,  B05B12/00 ,  B05B13/0431 ,  B05B13/0452 ,  C23C16/4401 ,  C23C16/45565 ,  C23C16/509 ,  C23C16/5096 ,  H01J37/32009 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32174 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32623 ,  H01J37/32935 ,  H01J37/32972 ,  H01J37/3299 ,  H01L21/67069 ,  H01L21/6715 ,  H01L21/67253

摘要： A plasma processing system having a plasma processing chamber comprising at least one of a chamber wall and a chamber liner is disclosed. The plasma processing system includes a plurality of ground straps disposed around a circumference of a chamber surface, the chamber surface being one of the chamber walls and the chamber liner of the plasma processing chamber. The plasma processing system further includes at least a first impedance device coupled to at least a first ground strap of the plurality of ground straps, wherein a second ground strap of the plurality of ground straps is not provided with a second impedance device having the same impedance value as the first impedance device.

摘要翻译： 公开了一种具有等离子体处理室的等离子体处理系统，其包括室壁和腔室衬套中的至少一个。 等离子体处理系统包括围绕室表面的圆周设置的多个接地带，室表面是等离子体处理室的室壁和室衬套之一。 等离子处理系统还包括耦合到多个接地带的至少第一接地带的至少第一阻抗器件，其中多个接地带的第二接地带没有设置具有相同阻抗的第二阻抗器件 值作为第一阻抗器件。

公开(公告)号：US09184028B2

公开(公告)日：2015-11-10

申请号：US12850559

申请日：2010-08-04

申请人： Rajinder Dhindsa ,  Alexei Marakhatnov ,  Andrew D. Bailey, III

发明人： Rajinder Dhindsa ,  Alexei Marakhatnov ,  Andrew D. Bailey, III

IPC分类号： C23F1/00 ,  H01L21/306 ,  H01J37/32

CPC分类号： H01J37/32449 ,  H01J37/32091 ,  H01J37/32697 ,  H01J37/32715 ,  H01J37/32834 ,  H01L21/67069 ,  H01L21/67259 ,  H01L21/6831 ,  H01L22/26

摘要： A semiconductor wafer processing apparatus includes a first electrode exposed to a first plasma generation volume, a second electrode exposed to a second plasma generation volume, and a gas distribution unit disposed between the first and second plasma generation volumes. The first electrode is defined to transmit radiofrequency (RF) power to the first plasma generation volume, and distribute a first plasma process gas to the first plasma generation volume. The second electrode is defined to transmit RF power to the second plasma generation volume, and hold a substrate in exposure to the second plasma generation volume. The gas distribution unit includes an arrangement of through-holes defined to fluidly connect the first plasma generation volume to the second plasma generation volume. The gas distribution unit also includes an arrangement of gas supply ports defined to distribute a second plasma process gas to the second plasma generation volume.

摘要翻译： 半导体晶片处理装置包括暴露于第一等离子体产生体积的第一电极，暴露于第二等离子体产生体积的第二电极和设置在第一和第二等离子体产生体积之间的气体分配单元。 第一电极被定义为将射频（RF）功率传送到第一等离子体产生体积，并且将第一等离子体处理气体分配到第一等离子体产生体积。 第二电极被定义为将RF功率传送到第二等离子体产生体积，并且保持衬底暴露于第二等离子体产生体积。 气体分配单元包括限定为将第一等离子体产生体积流体连接到第二等离子体产生体积的通孔的布置。 气体分配单元还包括被定义为将第二等离子体处理气体分配到第二等离子体产生体积的气体供给端口的布置。

公开(公告)号：US08911590B2

公开(公告)日：2014-12-16

申请号：US11363703

申请日：2006-02-27

申请人： Rajinder Dhindsa ,  Mukund Srinivasan ,  Kenji Takeshita ,  Alexei Marakhtanov ,  Andreas Fischer

发明人： Rajinder Dhindsa ,  Mukund Srinivasan ,  Kenji Takeshita ,  Alexei Marakhtanov ,  Andreas Fischer

IPC分类号： H01L21/306 ,  C23C16/00 ,  H01J37/32

CPC分类号： H01J37/32862 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32642

摘要： Broadly speaking, the embodiments of the present invention provide an improved chamber cleaning mechanism. The present invention can also be used to provide additional knobs to tune the etch processes. In one embodiment, a plasma processing chamber configured to generate a plasma includes a bottom electrode assembly with an bottom electrode, wherein the bottom electrode is configured to receive a substrate. The plasma processing chamber includes a top electrode assembly with a top electrode and an inductive coil surrounding the top electrode. The inductive coil is configured to convert a gas into a plasma within a region defined within the chamber, wherein the region is outside an area defined above a top surface of the bottom electrode.

摘要翻译： 广义而言，本发明的实施例提供了一种改进的室清洁机构。 本发明还可以用于提供附加的旋钮来调整蚀刻工艺。 在一个实施例中，构造成产生等离子体的等离子体处理室包括具有底部电极的底部电极组件，其中底部电极被配置为容纳衬底。 等离子体处理室包括具有顶部电极的顶部电极组件和围绕顶部电极的感应线圈。 感应线圈被配置为将气体转变成在腔室内限定的区域内的等离子体，其中该区域位于限定在底部电极的顶表面之上的区域之外。

公开(公告)号：US08898889B2

公开(公告)日：2014-12-02

申请号：US13419369

申请日：2012-03-13

申请人： Sang Ki Nam ,  Rajinder Dhindsa ,  Alexei Marakhtanov

发明人： Sang Ki Nam ,  Rajinder Dhindsa ,  Alexei Marakhtanov

IPC分类号： B23P19/00 ,  H01J37/32 ,  H01L21/683

CPC分类号： H01J37/32577 ,  H01J37/32715 ,  H01L21/6831 ,  Y10T29/49117 ,  Y10T29/53178 ,  Y10T279/23

摘要： Systems and methods are presented for a peripheral RF feed and symmetric RF return for symmetric RF delivery. According to one embodiment, a chuck assembly for plasma processing is provided. The chuck assembly includes an electrostatic chuck having a substrate support surface on a first side, a facility plate coupled to the electrostatic chuck on a second side that is opposite the substrate support surface, a peripheral RF feed configured to deliver RF power, the peripheral RF feed having a first portion contacting a periphery of the facility plate and an RF strap coupling the peripheral RF feed to an RF source.

摘要翻译： 提出了用于对称RF传输的外围RF馈送和对称RF返回的系统和方法。 根据一个实施例，提供了一种用于等离子体处理的卡盘组件。 卡盘组件包括：静电卡盘，其具有在第一侧上的基板支撑表面，在与基板支撑表面相对的第二侧耦合到静电卡盘的设备板，被配置为提供RF功率的外围RF馈送，外围RF 进料具有接触设备板的周边的第一部分和将外围RF进料耦合到RF源的RF带。

公开(公告)号：US08709202B2

公开(公告)日：2014-04-29

申请号：US12967750

申请日：2010-12-14

申请人： Anthony De La Llera ,  Allan K. Ronne ,  Jaehyun Kim ,  Jason Augustino ,  Rajinder Dhindsa ,  Yen-Kun Wang ,  Saurabh J. Ullal ,  Anthony J. Norell ,  Keith Comendant ,  William M. Denty, Jr.

发明人： Anthony De La Llera ,  Allan K. Ronne ,  Jaehyun Kim ,  Jason Augustino ,  Rajinder Dhindsa ,  Yen-Kun Wang ,  Saurabh J. Ullal ,  Anthony J. Norell ,  Keith Comendant ,  William M. Denty, Jr.

IPC分类号： H01L21/306 ,  C23C16/00

CPC分类号： H01J37/32449 ,  H01J37/32009 ,  H01J37/32541 ,  H01J37/3255

摘要： Components of a plasma processing apparatus includes a backing member with gas passages attached to an upper electrode with gas passages. To compensate for the differences in coefficient of thermal expansion between the metallic backing member and upper electrode, the gas passages are positioned and sized such that they are misaligned at ambient temperature and substantially concentric at an elevated processing temperature. Non-uniform shear stresses can be generated in the elastomeric bonding material, due to the thermal expansion. Shear stresses can either be accommodated by applying an elastomeric bonding material of varying thickness or using a backing member comprising of multiple pieces.

摘要翻译： 等离子体处理装置的组件包括具有气体通道的背衬构件，气体通道连接到具有气体通道的上部电极。 为了补偿金属背衬构件和上部电极之间的热膨胀系数的差异，气体通道的定位和尺寸使得它们在环境温度下不对准并且在升高的处理温度下基本上同心。 由于热膨胀，弹性粘合材料中可能会产生不均匀的剪切应力。 剪切应力可以通过施加不同厚度的弹性粘合材料或使用包括多个片的背衬构件来适应。