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    Optoelectronic component
    5.
    发明授权
    Optoelectronic component 有权
    光电元件

    公开(公告)号：US08624289B2

    公开(公告)日：2014-01-07

    申请号：US12680637

    申请日：2008-09-10

    申请人： Ralph Wirth

    发明人： Ralph Wirth

    IPC分类号： H01L27/15

    CPC分类号： H01L33/507 ,  H01L33/505 ,  H01L33/54 ,  H01L33/56

    摘要： An optoelectronic component comprising the following features is disclosed, at least one semiconductor body (1) provided for emitting electromagnetic radiation of a first wavelength range, an inner radiation-permeable shaped body (2), into which the semiconductor body (1) is embedded, a wavelength-converting layer (6) on an outer side (5) of the inner shaped body (2), said layer comprising a wavelength conversion substance (8) suitable for converting radiation of the first wavelength range into radiation of a second wavelength range, which is different from the first wavelength range, a coupling-out lens (10), into which the inner shaped body (2) and the wavelength-converting layer (6) are embedded, wherein the coupling-out lens (10) has an inner side enclosed by an inner hemisphere area having a radius Rconversion, and an outer side enclosing an outer hemisphere area having a radius Router, and the radii Rconverstion and Router meet the Weierstrass condition: Router≧Rconversion*nlens/nair, where nlens is the refractive index of the coupling-out lens and nair is the refractive index of the surroundings of the coupling-out lens.

    摘要翻译： 公开了一种包括以下特征的光电子部件：设置用于发射第一波长范围的电磁辐射的至少一个半导体本体（1），嵌入半导体本体（1）的内辐射透射成形体（2） ，所述内部成形体（2）的外侧（5）上的波长转换层（6），所述层包括适于将第一波长范围的辐射转换成第二波长的辐射的波长转换物质（8） 与第一波长范围不同的范围，内置成形体（2）和波长转换层（6）嵌入其中的耦合透镜（10），其中，耦合透镜（10） 具有由具有半径R转换的内半球区域封闭的内侧和封闭具有半径路由器的外半球区域的外侧，并且半径Rconverstion和路由器满足Weierstrass条件：Router> = Rconversion * nlens / nair，其中nlens是耦合透镜的折射率，nair是耦合透镜的周围的折射率。

    Optoelectronic semiconductor component with current spreading layer
    6.
    发明授权
    Optoelectronic semiconductor component with current spreading layer 有权
    具有电流扩散层的光电半导体元件

    公开(公告)号：US08501513B2

    公开(公告)日：2013-08-06

    申请号：US11992706

    申请日：2006-09-14

    申请人： Magnus Ahlstedt ,  Dieter Eissler ,  Robert Walter ,  Ralph Wirth

    发明人： Magnus Ahlstedt ,  Dieter Eissler ,  Robert Walter ,  Ralph Wirth

    IPC分类号： H01L33/00

    CPC分类号： H01L31/022466 ,  H01L31/103 ,  H01L31/1884 ,  H01L33/0095 ,  H01L33/42 ,  H01L2224/48463 ,  H01S5/0421 ,  Y02E10/50

    摘要： An optoelectronic semiconductor component comprising a semiconductor body (10) and a current spreading layer (3) is specified. The current spreading layer (3) is applied to the semiconductor body (10) at least in places. In this case, the current spreading layer (3) contains a metal (1) that forms a transparent electrically conductive metal oxide (2) in the current spreading layer, and the concentration (x) of the metal (1) decreases from that side of the current spreading layer (3) which faces the semiconductor body (10) toward that side of said current spreading layer which is remote from the semiconductor body (10). A method for producing such a semiconductor component is also disclosed.

    摘要翻译： 规定了包括半导体本体（10）和电流扩展层（3）的光电半导体部件。 至少在某个地方将电流扩展层（3）施加到半导体本体（10）。 在这种情况下，电流扩散层（3）包含在电流扩散层中形成透明导电金属氧化物（2）的金属（1），并且金属（1）的浓度（x）从该侧减小 （10）面向半导体本体（10）的电流扩展层（3）的电流扩散层（3）的电流扩展层（5）。 还公开了一种用于制造这种半导体部件的方法。

    Optoelectronic Device
    8.
    发明申请
    Optoelectronic Device 审中-公开
    光电器件

    公开(公告)号：US20110309755A1

    公开(公告)日：2011-12-22

    申请号：US13141079

    申请日：2009-12-14

    申请人： Ralph Wirth ,  Markus Klein

    发明人： Ralph Wirth ,  Markus Klein

    IPC分类号： H05B37/02

    CPC分类号： H05B33/0869 ,  H05B33/0872

    摘要： An optoelectronic device for emitting mixed light in a first and a different second wavelength range comprises a first or second semiconductor light source (1, 2) with a first or second light-emitting diode (11, 21), which emits light with a first or second characteristic wavelength in the first or second wavelength range and with a first or second intensity on application of a first or second current (41, 42), an optical sensor (3) for converting of a part (110, 510) of the light emitted in each case by the semiconductor light sources (1, 2) into a first or second sensor signal (341, 342), and a feedback controller (4) for feedback control of the first and second current (41, 42) as a function of the first and second sensor signal (341, 342), wherein the characteristic wavelengths and intensities of the light emitted in each case by the first and second semiconductor light sources (1, 2) exhibit a first or different second temperature and/or current and/or ageing dependency (931, 932, 941, 942), the optical sensor (3) exhibits a first or second wavelength-dependent sensitivity in the first or second wavelength range, which sensitivities are adapted to the first and second temperature dependencies (931, 932, 941, 942), and the feedback controller (4) controls the first and second currents (41, 42) in such a way that the first sensor signal (341) exhibits a given ratio to the second sensor signal (342).

    摘要翻译： 用于发射第一和第二波长范围的混合光的光电子器件包括具有第一或第二发光二极管（11,21）的第一或第二半导体光源（1,2），其发射具有第一和第二 或第二特征波长在第一或第二波长范围内并且在施加第一或第二电流（41,42）时具有第一或第二强度，光学传感器（3）用于转换第一或第二波长的部分（110,510） 通过半导体光源（1,2）在每种情况下发射的光分别成为第一或第二传感器信号（341,342），反馈控制器（4）用于将第一和第二电流（41,42）反馈控制为 第一和第二传感器信号（341,342）的功能，其中由第一和第二半导体光源（1,2）在每种情况下发射的光的特征波长和强度呈现第一或不同的第二温度和/ 或当前和/或老化依赖关系（931,932， 941,942），光学传感器（3）在第一或第二波长范围内呈现第一或第二波长依赖灵敏度，其灵敏度适应于第一和第二温度依赖性（931,932,941,942），以及 反馈控制器（4）以第一传感器信号（341）呈现与第二传感器信号（342）的给定比例的方式来控制第一和第二电流（41,42）。

    Radiation emitting semi-conductor element
    9.
    发明授权
    Radiation emitting semi-conductor element 有权
    辐射发射半导体元件

    公开(公告)号：US07692204B2

    公开(公告)日：2010-04-06

    申请号：US10567883

    申请日：2004-07-30

    申请人： Wilhelm Stein ,  Reiner Windisch ,  Ralph Wirth ,  Ines Pietzonka

    发明人： Wilhelm Stein ,  Reiner Windisch ,  Ralph Wirth ,  Ines Pietzonka

    IPC分类号： H01L29/08

    CPC分类号： H01L33/40 ,  H01L33/02

    摘要： A radiation-emitting semiconductor component with a semiconductor body, including a first principal surface (5), a second principal surface (9) and a semiconductor layer sequence (4) with an electromagnetic radiation generating active zone (7), in which the semiconductor layer sequence (4) is disposed between the first and the second principal surfaces (5, 9), a first current spreading layer (3) is disposed on the first principal surface (5) and electrically conductively connected to the semiconductor layer sequence (4), and a second current spreading layer (10) is disposed on the second principal surface (9) and electrically conductively connected to the semiconductor layer sequence (4).

    摘要翻译： 一种具有半导体主体的辐射发射半导体部件，包括第一主表面（5），第二主表面（9）和具有电磁辐射产生有源区（7）的半导体层序列（4），其中半导体 层序列（4）设置在第一和第二主表面（5,9）之间，第一电流扩散层（3）设置在第一主表面（5）上并与半导体层序列（4）导电连接 ），并且第二电流扩展层（10）设置在第二主表面（9）上并与半导体层序列（4）导电连接。

    Semiconductor body and semiconductor chip comprising a semiconductor body
    10.
    发明授权
    Semiconductor body and semiconductor chip comprising a semiconductor body 有权
    包括半导体本体的半导体体和半导体芯片

    公开(公告)号：US07649193B2

    公开(公告)日：2010-01-19

    申请号：US11904204

    申请日：2007-09-26

    申请人： Ralph Wirth

    发明人： Ralph Wirth

    IPC分类号： H01L31/00

    CPC分类号： H01L33/145 ,  H01L33/405 ,  H01L33/42 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor body (2), comprising a semiconductor layer sequence with an active region (3) suitable for generating radiation. The semiconductor layer sequence comprises two contact layers (6, 7), between which the active region is arranged. The contact layers are assigned a respective connection layer (12, 13) arranged on the semiconductor body. The respective connection layer is electrically conductively connected to the assigned contact layer. The respective connection layer is arranged on that side of the assigned contact layer which is remote from the active region. The connection layers are transmissive to the radiation to be generated in the active region, and the contact layers are of the same conduction type.

    摘要翻译： 一种半导体本体（2），包括具有适于产生辐射的有源区（3）的半导体层序列。 半导体层序列包括两个接触层（6,7），其间布置有源区。 接触层被分配布置在半导体主体上的相应的连接层（12,13）。 相应的连接层导电地连接到所分配的接触层。 相应的连接层布置在远离有源区域的分配接触层的该侧。 连接层对于在有源区域中要产生的辐射是透射的，并且接触层具有相同的导电类型。