公开(公告)号：US20080035944A1

公开(公告)日：2008-02-14

申请号：US11891783

申请日：2007-08-13

申请人： Franz Eberhard ,  Stefan Grotsch ,  Norbert Linder ,  Jurgen Moosburger ,  Klaus Streubel ,  Ralph Wirth ,  Matthias Sabathil ,  Julius Muschaweck ,  Krister Bergenek

发明人： Franz Eberhard ,  Stefan Grotsch ,  Norbert Linder ,  Jurgen Moosburger ,  Klaus Streubel ,  Ralph Wirth ,  Matthias Sabathil ,  Julius Muschaweck ,  Krister Bergenek

IPC分类号： H01L33/00

CPC分类号： H01L33/44 ,  G02F1/13362 ,  H01L33/46 ,  H01L33/58

摘要： A radiation-emitting component (10) having a layer stack (1) which is based on a semiconductor material and which has an active layer sequence (4) for generating electromagnetic radiation, and a filter element (2) which is arranged after the active layer sequence (4) in the irradiation direction (A) and by means of which a first radiation component is transmitted, and a second radiation component is reflected into the layer stack (1), wherein the second radiation component is subjected to a deflection process or an absorption and emission process, and the deflected or emitted radiation impinges on the filter element (2).

摘要翻译： 一种具有基于半导体材料并具有用于产生电磁辐射的有源层序列（4）的层堆叠（1）的辐射发射部件（10），以及布置在所述有源层之后的过滤元件（2） （A）中的第一辐射分量，并且第二辐射分量被反射到层叠体（1）中，其中第二辐射分量经受偏转过程 或吸收和发射过程，并且偏转或发射的辐射撞击在过滤元件（2）上。

公开(公告)号：US08354682B2

公开(公告)日：2013-01-15

申请号：US11891783

申请日：2007-08-13

申请人： Franz Eberhard ,  Stefan Grötsch ,  Norbert Linder ,  Jürgen Moosburger ,  Klaus Streubel ,  Ralph Wirth ,  Matthias Sabathil ,  Julius Muschaweck ,  Krister Bergenek

发明人： Franz Eberhard ,  Stefan Grötsch ,  Norbert Linder ,  Jürgen Moosburger ,  Klaus Streubel ,  Ralph Wirth ,  Matthias Sabathil ,  Julius Muschaweck ,  Krister Bergenek

IPC分类号： H01L33/00

CPC分类号： H01L33/44 ,  G02F1/13362 ,  H01L33/46 ,  H01L33/58

摘要： A radiation-emitting component (10) having a layer stack (1) which is based on a semiconductor material and which has an active layer sequence (4) for generating electromagnetic radiation, and a filter element (2) which is arranged after the active layer sequence (4) in the irradiation direction (A) and by means of which a first radiation component is transmitted, and a second radiation component is reflected into the layer stack (1), wherein the second radiation component is subjected to a deflection process or an absorption and emission process, and the deflected or emitted radiation impinges on the filter element (2).

摘要翻译： 一种具有基于半导体材料并具有用于产生电磁辐射的有源层序列（4）的层堆叠（1）的辐射发射部件（10），以及布置在所述有源层之后的过滤元件（2） （A）中的第一辐射分量，并且第二辐射分量被反射到层叠体（1）中，其中第二辐射分量经受偏转过程 或吸收和发射过程，并且偏转或发射的辐射撞击在过滤元件（2）上。

公开(公告)号：US20100295076A1

公开(公告)日：2010-11-25

申请号：US12747091

申请日：2008-12-12

申请人： Ralph Wirth ,  Julius Muschaweck

发明人： Ralph Wirth ,  Julius Muschaweck

IPC分类号： H01L33/58

CPC分类号： H01L33/58 ,  G02B27/28 ,  H01L33/60 ,  H01L2924/0002 ,  H01L2933/0091 ,  H01L2924/00

摘要： A semiconductor component emits polarized radiation with a first polarization direction. The semiconductor component includes a chip housing, a semiconductor chip and a chip-remote polarizing filter.

摘要翻译： 半导体部件发射具有第一偏振方向的偏振辐射。 半导体部件包括芯片壳体，半导体芯片和芯片远程偏振滤光器。

公开(公告)号：US07283577B2

公开(公告)日：2007-10-16

申请号：US11291692

申请日：2005-11-30

申请人： Wolfgang Schmid ,  Ralph Wirth ,  Klaus Streubel

发明人： Wolfgang Schmid ,  Ralph Wirth ,  Klaus Streubel

IPC分类号： H01S3/08

CPC分类号： H01L33/105 ,  B82Y20/00 ,  H01L33/405 ,  H01L33/465 ,  H01L2924/0002 ,  H01S5/0217 ,  H01S5/0425 ,  H01S5/18308 ,  H01S5/18375 ,  H01S5/34326 ,  H01L2924/00

摘要： A radiation-emitting semiconductor component, having a semiconductor layer sequence (1) with an active zone (2) provided for radiation generation and a first mirror arranged downstream of the active zone. The first mirror comprises a metal layer (4) and an intermediate layer (3) made of a radiation-transmissive and electrically conductive material, said intermediate layer being arranged on that side of the metal layer (4) which faces the active zone. The radiation-emitting semiconductor component is provided for operation with an optical resonator and for generating predominantly incoherent radiation as an RCLED or the radiation-emitting semiconductor component being provided for operation with an external optical resonator and for generating predominantly coherent radiation as a VECSEL.

摘要翻译： 具有半导体层序列（1）的辐射发射半导体部件，所述半导体层序列（1）具有用于发射辐射的活性区域（2）和布置在所述有源区域下游的第一反射镜。 第一镜包括金属层（4）和由辐射透射和导电材料制成的中间层（3），所述中间层布置在金属层（4）的面向活性区的一侧。 辐射发射半导体部件被提供用于与光学谐振器一起操作，并且用于产生主要为非相干辐射的RCLED或辐射发射半导体部件用于与外部光学谐振器一起操作并且用于产生主要相干辐射作为VECSEL。

公开(公告)号：US06995030B2

公开(公告)日：2006-02-07

申请号：US10346605

申请日：2003-01-17

申请人： Stefan Illek ,  Klaus Streubel ,  Walter Wegletter ,  Andreas Ploessl ,  Ralph Wirth

发明人： Stefan Illek ,  Klaus Streubel ,  Walter Wegletter ,  Andreas Ploessl ,  Ralph Wirth

IPC分类号： H01L21/00

CPC分类号： H01L33/20 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/10 ,  H01L33/30 ,  H01L33/405 ,  H01L2924/0002 ,  H01L2924/00

摘要： An optoelectronic semiconductor chip has an active layer containing a photon-emitting zone. The active layer is attached to a carrier member at a bonding side of the active layer. The active layer has at least one recess therein with a cross-sectional area that decreases with increasing depth into said active layer proceeding from said bonding side.

公开(公告)号：US20050017252A1

公开(公告)日：2005-01-27

申请号：US10912386

申请日：2004-08-02

申请人： Klaus Streubel ,  Ralph Wirth

发明人： Klaus Streubel ,  Ralph Wirth

IPC分类号： H01L23/367 ,  H01L33/20 ,  H01L33/62 ,  H01L33/64 ,  H01L27/15

CPC分类号： H01L33/642 ,  H01L23/3672 ,  H01L24/05 ,  H01L24/32 ,  H01L24/83 ,  H01L33/20 ,  H01L33/38 ,  H01L33/62 ,  H01L2224/04026 ,  H01L2224/05554 ,  H01L2224/05557 ,  H01L2224/2919 ,  H01L2224/32013 ,  H01L2224/32112 ,  H01L2224/32221 ,  H01L2224/83851 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/01021 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/10158 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/01031 ,  H01L2924/00014 ,  H01L2924/00

摘要： A light-emitting semiconductor component has a semiconductor element containing an active layer, electrical contacts for impressing a current into the active layer (heat being generated at the active layer and at the electrical contacts during operation), and a carrier with a large thermal capacity for absorbing the heat generated during operation. The rear side of the semiconductor element is (electrically and/or thermally) connected to the carrier by a adhesive. Recesses, which accommodate a part of the adhesive when the semiconductor element is connected to the carrier, are provided in the rear side of the semiconductor element.

公开(公告)号：US08203160B2

公开(公告)日：2012-06-19

申请号：US12443155

申请日：2007-09-19

申请人： Reiner Windisch ,  Ralph Wirth ,  Stefan Groetsch ,  Georg Bogner ,  Guenter Kirchberger ,  Klaus Streubel

发明人： Reiner Windisch ,  Ralph Wirth ,  Stefan Groetsch ,  Georg Bogner ,  Guenter Kirchberger ,  Klaus Streubel

IPC分类号： H01L33/00

摘要： An LED semiconductor body includes a number of at least two radiation-generating active layers. Each active layer has a forward voltage, wherein the number of active layers is adapted to an operating voltage in such a way that the voltage dropped across a series resistor connected in series with the active layers is at most of the same magnitude as a voltage dropped across the LED semiconductor body. The invention furthermore describes various uses of the LED semiconductor body.

公开(公告)号：US20110240955A1

公开(公告)日：2011-10-06

申请号：US12443155

申请日：2007-09-19

申请人： Reiner Windisch ,  Ralph Wirth ,  Stefan Groetsch ,  Georg Bogner ,  Guenter Kirchberger ,  Klaus Streubel

发明人： Reiner Windisch ,  Ralph Wirth ,  Stefan Groetsch ,  Georg Bogner ,  Guenter Kirchberger ,  Klaus Streubel

IPC分类号： H01L27/15

CPC分类号： H01L27/15 ,  H01L24/24 ,  H01L25/0756 ,  H01L25/167 ,  H01L33/08 ,  H01L2224/32145 ,  H01L2924/0002 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/00

摘要： An LED semiconductor body includes a number of at least two radiation-generating active layers. Each active layer has a forward voltage, wherein the number of active layers is adapted to an operating voltage in such a way that the voltage dropped across a series resistor connected in series with the active layers is at most of the same magnitude as a voltage dropped across the LED semiconductor body. The invention furthermore describes various uses of the LED semiconductor body.

摘要翻译： LED半导体体包括多个至少两个辐射生成有源层。 每个有源层具有正向电压，其中有源层的数量适应于工作电压，使得跨过与有源层串联连接的串联电阻器上的电压与电压下降最多相同的大小 跨越LED半导体体。 本发明还描述了LED半导体本体的各种用途。

公开(公告)号：US20100084678A1

公开(公告)日：2010-04-08

申请号：US12595356

申请日：2008-05-21

申请人： Klaus Streubel ,  Ralph Wirth

发明人： Klaus Streubel ,  Ralph Wirth

IPC分类号： H01L33/50 ,  H01L33/58

CPC分类号： H01L33/50 ,  H01L33/22 ,  H01L33/44 ,  H01L33/46

摘要： A luminescent diode chip includes a semiconductor body, which produces radiation of a first wavelength. A luminescence conversion element produces radiation of a second wavelength from the radiation of the first wavelength. An angular filter element reflects radiation that impinges on the angular filter element at a specific angle in relation to a main direction of emission back in the direction of the semiconductor body.

摘要翻译： 发光二极管芯片包括产生第一波长的辐射的半导体本体。 发光转换元件从第一波长的辐射产生第二波长的辐射。 角度滤波器元件以相对于半导体主体的方向的主发射方向以特定角度反射照射在角度滤波器元件上的辐射。

公开(公告)号：US20080283855A1

公开(公告)日：2008-11-20

申请号：US11663941

申请日：2005-09-27

申请人： Klaus Streubel ,  Ralph Wirth

发明人： Klaus Streubel ,  Ralph Wirth

IPC分类号： H01L33/00

CPC分类号： H01L33/08 ,  H01L33/20 ,  H01L33/387 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

摘要： An optoelectronic thin-film chip is specified, comprising at least one radiation-emitting region (8) in an active zone (7) of a thin-film layer (2) and a lens (10, 12) disposed downstream of the radiation-emitting region (8). The lens is formed by at least one partial region of the thin-film layer (2), the lateral extent (Φ) of the lens (10, 12) being greater than the lateral extent of the radiation-emitting region (δ). A method for producing such an optoelectronic thin-film chip is furthermore specified.

摘要翻译： 规定了一种光电子薄膜芯片，其包括在薄膜层（2）的有源区（7）中的至少一个辐射发射区（8）和设置在辐射发射区（8）的下游的透镜（10,12） 发光区域（8）。 透镜由薄膜层（2）的至少一个部分区域形成，透镜（10,12）的横向范围（Phi）大于辐射发射区域（delta）的横向范围。 进一步说明制造这种光电薄膜芯片的方法。