公开(公告)号：US08778813B2

公开(公告)日：2014-07-15

申请号：US13102846

申请日：2011-05-06

申请人： Ramprakash Sankarakrishnan ,  Ganesh Balasubramanian ,  Juan Carlos Rocha-Alvarez ,  Dale R. Du Bois ,  Mark Fodor ,  Jianhua Zhou ,  Amit Bansal ,  Mohamad A. Ayoub ,  Shahid Shaikh ,  Patrick Reilly ,  Deenesh Padhi ,  Thomas Nowak

发明人： Ramprakash Sankarakrishnan ,  Ganesh Balasubramanian ,  Juan Carlos Rocha-Alvarez ,  Dale R. Du Bois ,  Mark Fodor ,  Jianhua Zhou ,  Amit Bansal ,  Mohamad A. Ayoub ,  Shahid Shaikh ,  Patrick Reilly ,  Deenesh Padhi ,  Thomas Nowak

IPC分类号： H01L21/31 ,  H01L21/469 ,  H01L21/00 ,  H01J37/32 ,  C23C16/46 ,  C23C16/509 ,  H01L21/67 ,  H01L21/30 ,  H01L21/42 ,  C23C16/00 ,  B05C11/11

CPC分类号： H01L21/6719 ,  C23C16/46 ,  C23C16/5096 ,  H01J37/32495 ,  H01J37/32568 ,  H01J37/32651 ,  H01J37/32715

摘要： An apparatus for plasma processing a substrate is provided. The apparatus comprises a processing chamber, a substrate support disposed in the processing chamber, a shield member disposed in the processing chamber below the substrate support, and a lid assembly coupled to the processing chamber. The lid assembly comprises a conductive gas distributor coupled to a power source, and an electrode separated from the conductive gas distributor and the chamber body by electrical insulators. The electrode is also coupled to a source of electric power. The substrate support is formed with a stiffness that permits very little departure from parallelism. The shield member thermally shields a substrate transfer opening in the lower portion of the chamber body. A pumping plenum is located below the substrate support processing position, and is spaced apart therefrom.

摘要翻译： 提供了一种用于等离子体处理衬底的装置。 该设备包括处理室，设置在处理室中的衬底支撑件，设置在衬底支撑件下方的处理室中的屏蔽构件以及耦合到处理室的盖组件。 盖组件包括耦合到电源的导电气体分配器和通过电绝缘体与导电气体分配器和室主体分离的电极。 电极也耦合到电源。 衬底支撑件形成有允许很少偏离平行度的刚度。 屏蔽构件对室主体的下部的基板传送开口进行热屏蔽。 泵送气室位于基板支撑处理位置下方并与其间隔开。

公开(公告)号：US20110294303A1

公开(公告)日：2011-12-01

申请号：US13102846

申请日：2011-05-06

申请人： Ramprakash Sankarakrishnan ,  Ganesh Balasubramanian ,  Juan Carlos Rocha-Alvarez ,  Dale R. Du Bois ,  Mark Fodor ,  Jianhua Zhou ,  Amit Bansal ,  Mohamad A. Ayoub ,  Shahid Shaikh ,  Patrick Reilly ,  Deenesh Padhi ,  Thomas Nowak

发明人： Ramprakash Sankarakrishnan ,  Ganesh Balasubramanian ,  Juan Carlos Rocha-Alvarez ,  Dale R. Du Bois ,  Mark Fodor ,  Jianhua Zhou ,  Amit Bansal ,  Mohamad A. Ayoub ,  Shahid Shaikh ,  Patrick Reilly ,  Deenesh Padhi ,  Thomas Nowak

IPC分类号： C23C16/44 ,  H01L21/30 ,  C23C16/509

CPC分类号： H01L21/6719 ,  C23C16/46 ,  C23C16/5096 ,  H01J37/32495 ,  H01J37/32568 ,  H01J37/32651 ,  H01J37/32715

摘要： An apparatus for plasma processing a substrate is provided. The apparatus comprises a processing chamber, a substrate support disposed in the processing chamber, a shield member disposed in the processing chamber below the substrate support, and a lid assembly coupled to the processing chamber. The lid assembly comprises a conductive gas distributor coupled to a power source, and an electrode separated from the conductive gas distributor and the chamber body by electrical insulators. The electrode is also coupled to a source of electric power. The substrate support is formed with a stiffness that permits very little departure from parallelism. The shield member thermally shields a substrate transfer opening in the lower portion of the chamber body. A pumping plenum is located below the substrate support processing position, and is spaced apart therefrom.

摘要翻译： 提供了一种用于等离子体处理衬底的装置。 该设备包括处理室，设置在处理室中的衬底支撑件，设置在衬底支撑件下方的处理室中的屏蔽构件以及耦合到处理室的盖组件。 盖组件包括耦合到电源的导电气体分配器和通过电绝缘体与导电气体分配器和室主体分离的电极。 电极也耦合到电源。 衬底支撑件形成有允许很少偏离平行度的刚度。 屏蔽构件对室主体的下部的基板传送开口进行热屏蔽。 泵送气室位于基板支撑处理位置下方并与其间隔开。

公开(公告)号：US20130213574A1

公开(公告)日：2013-08-22

申请号：US13676820

申请日：2012-11-14

申请人： Ramprakash Sankarakrishnan ,  Dale R. Du Bois ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Visweswaren Sivaramakrishnan ,  Hichem M'Saad

发明人： Ramprakash Sankarakrishnan ,  Dale R. Du Bois ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Visweswaren Sivaramakrishnan ,  Hichem M'Saad

IPC分类号： B08B7/00

CPC分类号： F16K31/0655 ,  B08B5/00 ,  B08B7/0021 ,  C23C16/4405 ,  C23C16/4409 ,  C23C16/45561 ,  F16K1/221 ,  F16K1/224 ,  F16K31/06 ,  F16K31/088 ,  Y10S438/905

摘要： A method and apparatus for cleaning a process chamber are provided. In one embodiment, a process chamber is provided that includes a remote plasma source and a process chamber having at least two processing regions. Each processing region includes a substrate support assembly disposed in the processing region, a gas distribution system configured to provide gas into the processing region above the substrate support assembly, and a gas passage configured to provide gas into the processing region below the substrate support assembly. A first gas conduit is configured to flow a cleaning agent from the remote plasma source through the gas distribution assembly in each processing region while a second gas conduit is configured to divert a portion of the cleaning agent from the first gas conduit to the gas passage of each processing region.

公开(公告)号：US08591699B2

公开(公告)日：2013-11-26

申请号：US13676820

申请日：2012-11-14

申请人： Ramprakash Sankarakrishnan ,  Dale R. Du Bois ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Visweswaren Sivaramakrishnan ,  Hichem M'Saad

发明人： Ramprakash Sankarakrishnan ,  Dale R. Du Bois ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Visweswaren Sivaramakrishnan ,  Hichem M'Saad

IPC分类号： C23F1/00 ,  H01L21/306

CPC分类号： F16K31/0655 ,  B08B5/00 ,  B08B7/0021 ,  C23C16/4405 ,  C23C16/4409 ,  C23C16/45561 ,  F16K1/221 ,  F16K1/224 ,  F16K31/06 ,  F16K31/088 ,  Y10S438/905

摘要： A method and apparatus for cleaning a process chamber are provided. In one embodiment, a process chamber is provided that includes a remote plasma source and a process chamber having at least two processing regions. Each processing region includes a substrate support assembly disposed in the processing region, a gas distribution system configured to provide gas into the processing region above the substrate support assembly, and a gas passage configured to provide gas into the processing region below the substrate support assembly. A first gas conduit is configured to flow a cleaning agent from the remote plasma source through the gas distribution assembly in each processing region while a second gas conduit is configured to divert a portion of the cleaning agent from the first gas conduit to the gas passage of each processing region.

公开(公告)号：US07699935B2

公开(公告)日：2010-04-20

申请号：US12142402

申请日：2008-06-19

申请人： Ramprakash Sankarakrishnan ,  Dale DuBois ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Visweswaren Sivaramakrishnan ,  Hichem M'Saad

发明人： Ramprakash Sankarakrishnan ,  Dale DuBois ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Visweswaren Sivaramakrishnan ,  Hichem M'Saad

IPC分类号： C25F1/00

CPC分类号： F16K31/0655 ,  B08B5/00 ,  B08B7/0021 ,  C23C16/4405 ,  C23C16/4409 ,  C23C16/45561 ,  F16K1/221 ,  F16K1/224 ,  F16K31/06 ,  F16K31/088 ,  Y10S438/905

摘要： A method and apparatus for cleaning a process chamber are provided. In one embodiment, a process chamber is provided that includes a remote plasma source and a process chamber having at least two processing regions. Each processing region includes a substrate support assembly disposed in the processing region, a gas distribution system configured to provide gas into the processing region above the substrate support assembly, and a gas passage configured to provide gas into the processing region below the substrate support assembly. A first gas conduit is configured to flow a cleaning agent from the remote plasma source through the gas distribution assembly in each processing region while a second gas conduit is configured to divert a portion of the cleaning agent from the first gas conduit to the gas passage of each processing region.

摘要翻译： 提供了一种用于清洁处理室的方法和设备。 在一个实施例中，提供了包括远程等离子体源和具有至少两个处理区域的处理室的处理室。 每个处理区域包括设置在处理区域中的基板支撑组件，配置成将气体提供到基板支撑组件上方的处理区域中的气体分配系统，以及构造成将气体提供到基板支撑组件下方的处理区域中的气体通道。 第一气体管道构造成使来自远程等离子体源的清洁剂通过每个处理区域中的气体分配组件流动，而第二气体管道构造成将一部分清洁剂从第一气体导管转移到第一气体导管的气体通道 每个处理区域。

公开(公告)号：US20100012273A1

公开(公告)日：2010-01-21

申请号：US12571677

申请日：2009-10-01

申请人： Ramprakash Sankarakrishnan ,  Dale DuBois ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Visweswaren Sivaramakrishnan ,  Hichem M'Saad

发明人： Ramprakash Sankarakrishnan ,  Dale DuBois ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Visweswaren Sivaramakrishnan ,  Hichem M'Saad

IPC分类号： C23F1/08

CPC分类号： F16K31/0655 ,  B08B5/00 ,  B08B7/0021 ,  C23C16/4405 ,  C23C16/4409 ,  C23C16/45561 ,  F16K1/221 ,  F16K1/224 ,  F16K31/06 ,  F16K31/088 ,  Y10S438/905

摘要： A method and apparatus for cleaning a process chamber are provided. In one embodiment, a process chamber is provided that includes a remote plasma source and a process chamber having at least two processing regions. Each processing region includes a substrate support assembly disposed in the processing region, a gas distribution system configured to provide gas into the processing region above the substrate support assembly, and a gas passage configured to provide gas into the processing region below the substrate support assembly. A first gas conduit is configured to flow a cleaning agent from the remote plasma source through the gas distribution assembly in each processing region while a second gas conduit is configured to divert a portion of the cleaning agent from the first gas conduit to the gas passage of each processing region.

摘要翻译： 提供了一种用于清洁处理室的方法和设备。 在一个实施例中，提供了包括远程等离子体源和具有至少两个处理区域的处理室的处理室。 每个处理区域包括设置在处理区域中的基板支撑组件，配置成将气体提供到基板支撑组件上方的处理区域中的气体分配系统，以及构造成将气体提供到基板支撑组件下方的处理区域中的气体通道。 第一气体管道构造成使来自远程等离子体源的清洁剂通过每个处理区域中的气体分配组件流动，而第二气体管道构造成将一部分清洁剂从第一气体导管转移到第一气体导管的气体通道 每个处理区域。

公开(公告)号：US20090314309A1

公开(公告)日：2009-12-24

申请号：US12142402

申请日：2008-06-19

申请人： Ramprakash Sankarakrishnan ,  Dale DuBois ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Visweswaren Sivaramakrishnan ,  Hichem M'Saad

发明人： Ramprakash Sankarakrishnan ,  Dale DuBois ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Visweswaren Sivaramakrishnan ,  Hichem M'Saad

IPC分类号： B08B5/00 ,  C23C16/56 ,  C23C16/513

CPC分类号： F16K31/0655 ,  B08B5/00 ,  B08B7/0021 ,  C23C16/4405 ,  C23C16/4409 ,  C23C16/45561 ,  F16K1/221 ,  F16K1/224 ,  F16K31/06 ,  F16K31/088 ,  Y10S438/905

摘要： A method and apparatus for cleaning a process chamber are provided. In one embodiment, a process chamber is provided that includes a remote plasma source and a process chamber having at least two processing regions. Each processing region includes a substrate support assembly disposed in the processing region, a gas distribution system configured to provide gas into the processing region above the substrate support assembly, and a gas passage configured to provide gas into the processing region below the substrate support assembly. A first gas conduit is configured to flow a cleaning agent from the remote plasma source through the gas distribution assembly in each processing region while a second gas conduit is configured to divert a portion of the cleaning agent from the first gas conduit to the gas passage of each processing region.

摘要翻译： 提供了一种用于清洁处理室的方法和设备。 在一个实施例中，提供了包括远程等离子体源和具有至少两个处理区域的处理室的处理室。 每个处理区域包括设置在处理区域中的基板支撑组件，配置成将气体提供到基板支撑组件上方的处理区域中的气体分配系统，以及构造成将气体提供到基板支撑组件下方的处理区域中的气体通道。 第一气体管道构造成使来自远程等离子体源的清洁剂通过每个处理区域中的气体分配组件流动，而第二气体管道构造成将一部分清洁剂从第一气体导管转移到第一气体导管的气体通道 每个处理区域。

公开(公告)号：US09299581B2

公开(公告)日：2016-03-29

申请号：US13456404

申请日：2012-04-26

申请人： Kwangduk Douglas Lee ,  Sudha Rathi ,  Ramprakash Sankarakrishnan ,  Martin Jay Seamons ,  Irfan Jamil ,  Bok Hoen Kim

发明人： Kwangduk Douglas Lee ,  Sudha Rathi ,  Ramprakash Sankarakrishnan ,  Martin Jay Seamons ,  Irfan Jamil ,  Bok Hoen Kim

IPC分类号： B08B5/00 ,  H01L21/311 ,  H01L21/02

CPC分类号： H01L21/31122 ,  H01L21/0206 ,  H01L21/31144

摘要： Embodiments of the invention generally relate to methods of dry stripping boron-carbon films. In one embodiment, alternating plasmas of hydrogen and oxygen are used to remove a boron-carbon film. In another embodiment, co-flowed oxygen and hydrogen plasma is used to remove a boron-carbon containing film. A nitrous oxide plasma may be used in addition to or as an alternative to either of the above oxygen plasmas. In another embodiment, a plasma generated from water vapor is used to remove a boron-carbon film. The boron-carbon removal processes may also include an optional polymer removal process prior to removal of the boron-carbon films. The polymer removal process includes exposing the boron-carbon film to NF3 to remove from the surface of the boron-carbon film any carbon-based polymers generated during a substrate etching process.

摘要翻译： 本发明的实施方案一般涉及干燥汽提硼 - 碳膜的方法。 在一个实施方案中，使用氢和氧的交替等离子体去除硼 - 碳膜。 在另一个实施方案中，使用共流氧和氢等离子体去除含硼碳膜。 除了作为上述氧等离子体中的任一种之外，还可以使用一氧化二氮等离子体。 在另一个实施方案中，使用由水蒸气产生的等离子体来除去硼 - 碳膜。 在除去硼 - 碳膜之前，硼 - 碳去除方法还可以包括任选的聚合物去除方法。 聚合物去除方法包括将硼 - 碳膜暴露于NF3以从硼 - 碳膜的表面除去在基板蚀刻工艺期间产生的任何碳基聚合物。

公开(公告)号：US20120285492A1

公开(公告)日：2012-11-15

申请号：US13456404

申请日：2012-04-26

申请人： Kwangduk Douglas Lee ,  Sudha Rathi ,  Ramprakash Sankarakrishnan ,  Martin Jay Seamons ,  Irfan Jamil ,  Bok Hoen Kim

发明人： Kwangduk Douglas Lee ,  Sudha Rathi ,  Ramprakash Sankarakrishnan ,  Martin Jay Seamons ,  Irfan Jamil ,  Bok Hoen Kim

IPC分类号： B08B5/00

CPC分类号： H01L21/31122 ,  H01L21/0206 ,  H01L21/31144

摘要： Embodiments of the invention generally relate to methods of dry stripping boron-carbon films. In one embodiment, alternating plasmas of hydrogen and oxygen are used to remove a boron-carbon film. In another embodiment, co-flowed oxygen and hydrogen plasma is used to remove a boron-carbon containing film. A nitrous oxide plasma may be used in addition to or as an alternative to either of the above oxygen plasmas. In another embodiment, a plasma generated from water vapor is used to remove a boron-carbon film. The boron-carbon removal processes may also include an optional polymer removal process prior to removal of the boron-carbon films. The polymer removal process includes exposing the boron-carbon film to NF3 to remove from the surface of the boron-carbon film any carbon-based polymers generated during a substrate etching process.

摘要翻译： 本发明的实施方案一般涉及干燥汽提硼 - 碳膜的方法。 在一个实施方案中，使用氢和氧的交替等离子体去除硼 - 碳膜。 在另一个实施方案中，使用共流氧和氢等离子体去除含硼碳膜。 除了作为上述氧等离子体中的任一种之外，还可以使用一氧化二氮等离子体。 在另一个实施方案中，使用由水蒸气产生的等离子体来除去硼 - 碳膜。 在除去硼 - 碳膜之前，硼 - 碳去除方法还可以包括任选的聚合物去除方法。 聚合物去除方法包括将硼 - 碳膜暴露于NF3以从硼 - 碳膜的表面除去在基板蚀刻工艺期间产生的任何碳基聚合物。