利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

7 条记录 (耗时 0.011 秒)

    VACUUM REACTION CHAMBER WITH X-LAMP HEATER
    5.
    发明申请
    VACUUM REACTION CHAMBER WITH X-LAMP HEATER 审中-公开
    真空反应室与X灯加热器

    公开(公告)号：US20060289795A1

    公开(公告)日：2006-12-28

    申请号：US11383383

    申请日：2006-05-15

    申请人： Dale Dubois ,  Juan Rocha-Alvarez ,  Amir Al-Bayati ,  Khaled Elsheref ,  Alexandros Demos ,  Lester D'Cruz ,  Hichem M'Saad ,  Ashish Shah ,  Takashi Shimizu ,  Naoyuki Iwasaki

    发明人： Dale Dubois ,  Juan Rocha-Alvarez ,  Amir Al-Bayati ,  Khaled Elsheref ,  Alexandros Demos ,  Lester D'Cruz ,  Hichem M'Saad ,  Ashish Shah ,  Takashi Shimizu ,  Naoyuki Iwasaki

    IPC分类号： G21G5/00

    CPC分类号： H01J37/317 ,  H01J2237/2001

    摘要： Methods and apparatus for electron beam treatment of a substrate are provided. An electron beam apparatus that includes a vacuum chamber, at least one thermocouple assembly in communication with the vacuum chamber; and a heating device in communication with the vacuum chamber and combinations thereof are provided. In one embodiment, the vacuum chamber comprises a cathode, an anode, and a substrate support. In another embodiment, the vacuum chamber comprises a grid located between the anode and the substrate support. In one embodiment the heating device comprises a first parallel light array and a second light array positioned such that the first parallel light array and the second light array intersect. In one embodiment the thermocouple assembly comprises a temperature sensor made of aluminum nitride.

    摘要翻译： 提供了用于基板的电子束处理的方法和装置。 一种电子束装置，包括真空室，与真空室连通的至少一个热电偶组件; 并且提供与真空室连通的加热装置及其组合。 在一个实施例中，真空室包括阴极，阳极和衬底支撑件。 在另一个实施例中，真空室包括位于阳极和基板支撑件之间的格栅。 在一个实施例中，加热装置包括第一平行光阵列和第二光阵列，其定位成使得第一平行光阵列和第二光阵列相交。 在一个实施例中，热电偶组件包括由氮化铝制成的温度传感器。

    Heater with shadow ring and purge above wafer surface
    7.
    发明授权
    Heater with shadow ring and purge above wafer surface 失效
    加热器带有阴影环并在晶片表面上方吹扫

    公开(公告)号：US5888304A

    公开(公告)日：1999-03-30

    申请号：US626789

    申请日：1996-04-02

    申请人： Salvador P. Umotoy ,  Alan F. Morrison ,  Karl A. Littau ,  Richard A. Marsh ,  Lawrence Chung-Lai Lei ,  Dale DuBois

    发明人： Salvador P. Umotoy ,  Alan F. Morrison ,  Karl A. Littau ,  Richard A. Marsh ,  Lawrence Chung-Lai Lei ,  Dale DuBois

    IPC分类号： C23C16/02 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  H01L21/205 ,  H01L21/285 ,  C23C16/00

    CPC分类号： C23C16/45521 ,  C23C16/4585 ,  C23C16/46

    摘要： This invention provides a method and apparatus for supporting a wafer in a processing chamber, where the wafer is supported and heated from below via a heater pedestal having a diameter larger than that of the wafer. A process fluid flowing downward toward the top of the wafer is inhibited from depositing near the wafer edge by a shadow ring. The shadow ring, which is placed over but does not contact the wafer, physically masks an annular strip of the wafer near its edge. The shadow ring inhibits deposition of process fluides on the wafer in two distinct ways. First, the shadow ring physically obstructs process gas, flowing downward from above the wafer, from depositing on the masked portion of the wafer. Second, the shadow ring is used to direct a flow of a purge gas to inhibit process gas from seeping under the shadow ring and depositing near the wafer edge. A purge gas manifold is defined by a cylindrical annulus located concentrically below the shadow ring and circumscribing the heater pedestal. A purge gap between the wafer and the shadow ring forms the outlet of the purge gas manifold. The purge gas flows out of the purge gap, inhibiting the process gas from entering the purge gap, and thus further inhibiting deposition on the masked portion of the wafer.

    摘要翻译： 本发明提供了一种用于在处理室中支撑晶片的方法和装置，其中通过直径大于晶片直径的加热器基座从下方支撑晶片并从其下被加热。 向晶片顶部向下流动的工艺流体被阴影环抑制在晶片边缘附近沉积。 放置在但不接触晶片的阴影环在其边缘附近物理屏蔽晶片的环形条。 阴影环以两种截然不同的方式阻止了工艺流程在晶片上沉积。 首先，阴影环物理地阻挡从晶片上方向下流动的工艺气体沉积在晶片的掩蔽部分上。 第二，阴影环用于引导吹扫气体的流动，以阻止处理气体在阴影环下渗出并沉积在晶片边缘附近。 吹扫气体歧管由同心地位于阴影环下方并围绕加热器基座的圆柱形环限定。 晶片和阴影环之间的吹扫间隙形成吹扫气体歧管的出口。 净化气体流出吹扫间隙，阻止处理气体进入吹扫间隙，从而进一步抑制沉积在晶片的掩蔽部分上。