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1.发明授权Apparatus and methods for improving parallel conduction in a quantum well device 有权用于改善量子阱器件中的并联传导的装置和方法公开(公告)号：US08080820B2
公开(公告)日：2011-12-20
申请号：US12381832
申请日：2009-03-16
IPC分类号： H01L29/06
CPC分类号： H01L29/66977 , H01L29/1083 , H01L29/161 , H01L29/365 , H01L29/66431 , H01L29/66439 , H01L29/7781
摘要： Embodiments of an apparatus and methods of providing a quantum well device for improved parallel conduction are generally described herein. Other embodiments may be described and claimed.
摘要翻译： 本文通常描述了提供用于改进的并联传导的量子阱装置的装置和方法的实施例。 可以描述和要求保护其他实施例。
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2.发明申请Apparatus and methods for improving parallel conduction in a quantum well device 有权用于改善量子阱器件中的并联传导的装置和方法公开(公告)号：US20100230658A1
公开(公告)日：2010-09-16
申请号：US12381832
申请日：2009-03-16
CPC分类号： H01L29/66977 , H01L29/1083 , H01L29/161 , H01L29/365 , H01L29/66431 , H01L29/66439 , H01L29/7781
摘要： Embodiments of an apparatus and methods of providing a quantum well device for improved parallel conduction are generally described herein. Other embodiments may be described and claimed.
摘要翻译： 本文通常描述了提供用于改进的并联传导的量子阱装置的装置和方法的实施例。 可以描述和要求保护其他实施例。
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3.发明申请APPARATUS AND METHODS FOR IMPROVING PARALLEL CONDUCTION IN A QUANTUM WELL DEVICE 有权用于改善量子阱器件中并联导通的装置和方法公开(公告)号：US20120326123A1
公开(公告)日：2012-12-27
申请号：US13545358
申请日：2012-07-10
IPC分类号： H01L29/02
CPC分类号： H01L29/66977 , H01L29/1083 , H01L29/161 , H01L29/365 , H01L29/66431 , H01L29/66439 , H01L29/7781
摘要： Embodiments of an apparatus and methods of providing a quantum well device for improved parallel conduction are generally described herein. Other embodiments may be described and claimed.
摘要翻译： 本文通常描述了提供用于改进的并联传导的量子阱装置的装置和方法的实施例。 可以描述和要求保护其他实施例。
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4.发明授权Apparatus and methods for improving parallel conduction in a quantum well device 有权用于改善量子阱器件中的并联传导的装置和方法公开(公告)号：US08242001B2
公开(公告)日：2012-08-14
申请号：US13274468
申请日：2011-10-17
IPC分类号： H01L21/20
CPC分类号： H01L29/66977 , H01L29/1083 , H01L29/161 , H01L29/365 , H01L29/66431 , H01L29/66439 , H01L29/7781
摘要： Embodiments of an apparatus and methods of providing a quantum well device for improved parallel conduction are generally described herein. Other embodiments may be described and claimed.
摘要翻译： 本文通常描述了提供用于改进的并联传导的量子阱装置的装置和方法的实施例。 可以描述和要求保护其他实施例。
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5.发明申请APPARATUS AND METHODS FOR IMPROVING PARALLEL CONDUCTION IN A QUANTUM WELL DEVICE 审中-公开用于改善量子阱器件中并联导通的装置和方法公开(公告)号：US20130313520A1
公开(公告)日：2013-11-28
申请号：US13956685
申请日：2013-08-01
IPC分类号： H01L29/66
CPC分类号： H01L29/66977 , H01L29/1083 , H01L29/161 , H01L29/365 , H01L29/66431 , H01L29/66439 , H01L29/7781
摘要： Embodiments of an apparatus and methods of providing a quantum well device for improved parallel conduction are generally described herein. Other embodiments may be described and claimed.
摘要翻译： 本文通常描述了提供用于改进的并联传导的量子阱装置的装置和方法的实施例。 可以描述和要求保护其他实施例。
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公开(公告)号：US08525151B2
公开(公告)日：2013-09-03
申请号：US13545358
申请日：2012-07-10
IPC分类号： H01L29/06
CPC分类号： H01L29/66977 , H01L29/1083 , H01L29/161 , H01L29/365 , H01L29/66431 , H01L29/66439 , H01L29/7781
摘要： Embodiments of an apparatus and methods of providing a quantum well device for improved parallel conduction are generally described herein. Other embodiments may be described and claimed.
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公开(公告)号：US08525162B2
公开(公告)日：2013-09-03
申请号：US13291682
申请日：2011-11-08
申请人： Benjamin Chu-Kung , Uday Shah , Ravi Pillarisetty , Been-Yih Jin , Marko Radosavljevic , Willy Rachmady
发明人： Benjamin Chu-Kung , Uday Shah , Ravi Pillarisetty , Been-Yih Jin , Marko Radosavljevic , Willy Rachmady
IPC分类号： H01L29/08
CPC分类号： H01L29/06 , B82Y99/00 , H01L21/76205 , H01L21/76224 , H01L29/0657 , H01L29/66795 , H01L29/775 , H01L29/7854
摘要： A method is provided. The method includes forming a plurality of nanowires on a top surface of a substrate and forming an oxide layer adjacent to a bottom surface of each of the plurality of nanowires, wherein the oxide layer is to isolate each of the plurality of nanowires from the substrate.
摘要翻译： 提供了一种方法。 该方法包括在衬底的顶表面上形成多个纳米线并形成与多个纳米线中的每一个的底表面相邻的氧化物层，其中氧化物层将多个纳米线与衬底隔离。
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公开(公告)号：US20110156005A1
公开(公告)日：2011-06-30
申请号：US12655468
申请日：2009-12-30
申请人： Ravi Pillarisetty , Been-Yih Jin , Benjamin Chu-Kung , Matthew V. Metz , Jack T. Kavalieros , Marko Radosavljevic , Roza Kotlyar , Willy Rachmady , Niloy Mukherjee , Gilbert Dewey , Robert S. Chau
发明人： Ravi Pillarisetty , Been-Yih Jin , Benjamin Chu-Kung , Matthew V. Metz , Jack T. Kavalieros , Marko Radosavljevic , Roza Kotlyar , Willy Rachmady , Niloy Mukherjee , Gilbert Dewey , Robert S. Chau
IPC分类号： H01L29/772
CPC分类号： H01L27/092 , H01L21/02532 , H01L21/02546 , H01L21/283 , H01L27/088 , H01L29/0653 , H01L29/155 , H01L29/165 , H01L29/267 , H01L29/517 , H01L29/66431 , H01L29/66522 , H01L29/66553 , H01L29/775 , H01L29/7782
摘要： A quantum well transistor has a germanium quantum well channel region. A silicon-containing etch stop layer provides easy placement of a gate dielectric close to the channel. A group III-V barrier layer adds strain to the channel. Graded silicon germanium layers above and below the channel region improve performance. Multiple gate dielectric materials allow use of a high-k value gate dielectric.
摘要翻译： 量子阱晶体管具有锗量子阱沟道区域。 含硅蚀刻停止层提供了靠近通道的栅电介质的容易放置。 III-V族阻挡层增加了通道的应变。 通道区域上方和下方的分级硅锗层提高性能。 多栅极电介质材料允许使用高k值栅极电介质。
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公开(公告)号：US20100163838A1
公开(公告)日：2010-07-01
申请号：US12346554
申请日：2008-12-30
申请人： Benjamin Chu-Kung , Uday Shah , Ravi Pillarisetty , Been-Yih Jin , Marko Radosavljevic , Willy Rachmady
发明人： Benjamin Chu-Kung , Uday Shah , Ravi Pillarisetty , Been-Yih Jin , Marko Radosavljevic , Willy Rachmady
IPC分类号： H01L29/06 , H01L21/20 , H01L21/762
CPC分类号： H01L29/06 , B82Y99/00 , H01L21/76205 , H01L21/76224 , H01L29/0657 , H01L29/66795 , H01L29/775 , H01L29/7854
摘要： A method is provided. The method includes forming a plurality of nanowires on a top surface of a substrate and forming an oxide layer adjacent to a bottom surface of each of the plurality of nanowires, wherein the oxide layer is to isolate each of the plurality of nanowires from the substrate.
摘要翻译： 提供了一种方法。 该方法包括在衬底的顶表面上形成多个纳米线并形成与多个纳米线中的每一个的底表面相邻的氧化物层，其中氧化物层将多个纳米线与衬底隔离。
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公开(公告)号：US20140054548A1
公开(公告)日：2014-02-27
申请号：US14069880
申请日：2013-11-01
申请人： Ravi Pillarisetty , Jack T. Kavalieros , Willy Rachmady , Uday Shah , Benjamin Chu-Kung , Marko Radosavljevic , Niloy Mukherjee , Gilbert Dewey , Been-Yih Jin , Robert S. Chau
发明人： Ravi Pillarisetty , Jack T. Kavalieros , Willy Rachmady , Uday Shah , Benjamin Chu-Kung , Marko Radosavljevic , Niloy Mukherjee , Gilbert Dewey , Been-Yih Jin , Robert S. Chau
IPC分类号： H01L29/775 , H01L21/76 , H01L29/66
CPC分类号： H01L29/775 , B82Y10/00 , H01L21/76 , H01L29/0653 , H01L29/1054 , H01L29/155 , H01L29/165 , H01L29/267 , H01L29/517 , H01L29/66431 , H01L29/66439 , H01L29/66477 , H01L29/66795 , H01L29/66977 , H01L29/7782 , H01L29/7849 , H01L29/785 , H01L29/7851
摘要： Techniques are disclosed for forming a non-planar germanium quantum well structure. In particular, the quantum well structure can be implemented with group IV or III-V semiconductor materials and includes a germanium fin structure. In one example case, a non-planar quantum well device is provided, which includes a quantum well structure having a substrate (e.g. SiGe or GaAs buffer on silicon), a IV or III-V material barrier layer (e.g., SiGe or GaAs or AlGaAs), a doping layer (e.g., delta/modulation doped), and an undoped germanium quantum well layer. An undoped germanium fin structure is formed in the quantum well structure, and a top barrier layer deposited over the fin structure. A gate metal can be deposited across the fin structure. Drain/source regions can be formed at respective ends of the fin structure.
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