-
公开(公告)号：US06770917B2
公开(公告)日：2004-08-03
申请号：US10395425
申请日：2003-03-24
IPC分类号： H01L29861
CPC分类号： H01L29/405 , H01L29/66128 , H01L29/8611
摘要： A high-voltage diode and a method for producing the high-voltage diode involve only three masking steps. Only three masking steps are required due to the use of adjustment structures and of a chipping stopper with an edge passivation containing a-C:H or a-Si. In this manner, the high-voltage diode is inexpensive to manufacture. The diode has a rating for reverse voltages of, in particular, above about 400 V and preferably above about 500 V, and can be fabricated with the least possible process complexity and thus a small number of photo technologies and, in the edge region, can readily be equipped with a channel stopper for avoiding leakage currents and a chipping stopper for limiting the extent of saving defects.
摘要翻译： 高压二极管和高压二极管的制造方法仅涉及三个掩模步骤。 由于使用调节结构和具有含有-c：H或a-Si的边缘钝化的切屑塞，仅需要三个掩模步骤。 以这种方式，高压二极管的制造便宜。 二极管的反向电压的额定值尤其高于约400V，优选高于约500V，并且可以以最不可能的工艺复杂性制造，因此可以制造少量的照相技术，并且在边缘区域中 容易配备有用于避免泄漏电流的通道止动器和用于限制挽救缺陷的程度的切屑止动器。
-
2.发明授权Method for the production of a buried stop zone in a semiconductor component and semiconductor component comprising a buried stop zone 有权一种用于在半导体部件和半导体部件中制造掩埋停止区域的方法，该半导体部件包括掩埋停止区域公开(公告)号：US07749876B2
公开(公告)日：2010-07-06
申请号：US12039173
申请日：2008-02-28
IPC分类号： H01L21/266
CPC分类号： H01L29/7802 , H01L21/263 , H01L29/0878 , H01L29/167 , H01L29/32 , H01L29/36 , H01L29/66136 , H01L29/66333 , H01L29/66712 , H01L29/7395 , H01L29/861
摘要： According to one embodiment, a method for the production of a stop zone in a doped zone of a semiconductor body comprises irradiating the semiconductor body with particle radiation in order to produce defects in a crystal lattice of the semiconductor body. The semiconductor body is exposed to an environment containing dopant atoms, during which dopant atoms are indiffused into the semiconductor body at an elevated temperature.
摘要翻译： 根据一个实施例，在半导体主体的掺杂区域中制造停止区域的方法包括用半导体主体照射半导体主体以产生半导体本体的晶格缺陷。 将半导体体暴露于含有掺杂剂原子的环境中，在该环境中掺杂剂原子在升高的温度下扩散到半导体本体中。
-
3.发明授权Method for producing a stop zone in a semiconductor body and semiconductor component having a stop zone 有权用于在半导体本体中制造阻挡区域的方法和具有停止区域的半导体部件公开(公告)号：US07667297B2
公开(公告)日：2010-02-23
申请号：US11423026
申请日：2006-06-08
IPC分类号： H01L29/167 , H01L29/30
CPC分类号： H01L29/0834 , H01L21/263 , H01L21/324 , H01L29/32 , H01L29/36 , H01L29/66333 , H01L29/7395 , H01L29/861
摘要： A method for producing a buried stop zone in a semiconductor body and a semiconductor component having a stop zone, has the method steps of: providing a semiconductor body having a first and a second side and a basic doping of a first conduction type, irradiating the semiconductor body via one of the sides with protons, as a result of which protons are introduced into a first region of the semiconductor body situated at a distance from the irradiation side, carrying out a thermal process in which the semiconductor body is heated to a predetermined temperature for a predetermined time duration, the temperature and the duration being chosen such that hydrogen-induced donors are generated both in the first region and in a second region adjacent to the first region in the direction of the irradiation side.
摘要翻译： 一种用于在半导体本体中制造掩埋阻挡区域的方法和具有停止区域的半导体部件的方法，具有以下方法步骤：提供具有第一和第二侧的半导体本体和第一导电类型的基本掺杂， 半导体本体通过一个侧面具有质子，其结果是将质子引入位于离辐射侧一定距离处的半导体主体的第一区域中，从而进行热处理，其中半导体主体被加热到预定的 温度预定的持续时间，选择温度和持续时间，使得在照射侧的方向上在第一区域和邻近第一区域的第二区域中产生氢诱导的供体。
-
4.发明申请Method for production of a buried stop zone in a semiconductor component and semiconductor component comprising a buried stop zone 有权一种用于在半导体部件和半导体部件中制造掩埋停止区域的方法，所述半导体部件包括掩埋停止区域公开(公告)号：US20050280076A1
公开(公告)日：2005-12-22
申请号：US11083914
申请日：2005-03-18
IPC分类号： H01L29/08 , H01L29/32 , H01L29/739 , H01L29/78 , H01L29/861 , H01L29/868 , H01L29/76 , H01L21/8238
CPC分类号： H01L29/7802 , H01L21/263 , H01L29/0878 , H01L29/167 , H01L29/32 , H01L29/36 , H01L29/66136 , H01L29/66333 , H01L29/66712 , H01L29/7395 , H01L29/861
摘要： A method for the production of a stop zone in a doped zone of a semiconductor body having a first side and a second side, comprises the following method steps: applying a mask having cutouts to one of the sides of the semiconductor body, irradiating the side having the mask with proton radiation, carrying out a heat treatment method in order to produce hydrogen-induced donors in the semiconductor body.
摘要翻译： 一种用于在具有第一侧面和第二面的半导体本体的掺杂区域中制造阻挡区域的方法，包括以下方法步骤：将具有切口的掩模施加到半导体主体的一个侧面上，照射该侧面 具有质子辐射的掩模，进行热处理方法以在半导体本体中产生氢诱导的供体。
-
5.发明申请Method for Producing a Stop Zone in a Semiconductor Body and Semiconductor Component Having a Stop Zone 有权用于在半导体体中产生停止区域的方法和具有停止区域的半导体部件公开(公告)号：US20060286753A1
公开(公告)日：2006-12-21
申请号：US11423026
申请日：2006-06-08
IPC分类号： H01L21/336
CPC分类号： H01L29/0834 , H01L21/263 , H01L21/324 , H01L29/32 , H01L29/36 , H01L29/66333 , H01L29/7395 , H01L29/861
摘要： A method for producing a buried stop zone in a semiconductor body and a semiconductor component having a stop zone, has the method steps of: providing a semiconductor body having a first and a second side and a basic doping of a first conduction type, irradiating the semiconductor body via one of the sides with protons, as a result of which protons are introduced into a first region of the semiconductor body situated at a distance from the irradiation side, carrying out a thermal process in which the semiconductor body is heated to a predetermined temperature for a predetermined time duration, the temperature and the duration being chosen such that hydrogen-induced donors are generated both in the first region and in a second region adjacent to the first region in the direction of the irradiation side.
摘要翻译： 一种用于在半导体本体中制造掩埋阻挡区域的方法和具有停止区域的半导体部件的方法，具有以下方法步骤：提供具有第一和第二侧的半导体本体和第一导电类型的基本掺杂， 半导体本体通过一个侧面具有质子，其结果是将质子引入位于离辐射侧一定距离处的半导体主体的第一区域中，从而进行热处理，其中半导体主体被加热到预定的 温度预定的持续时间，选择温度和持续时间，使得在照射侧的方向上在第一区域和邻近第一区域的第二区域中产生氢诱导的供体。
-
公开(公告)号：US06441408B2
公开(公告)日：2002-08-27
申请号：US09761241
申请日：2001-01-17
申请人： Alfred Porst , Helmut Strack , Anton Mauder , Hans-Joachim Schulze , Heinrich Brunner , Josef Bauer , Reiner Barthelmess
发明人： Alfred Porst , Helmut Strack , Anton Mauder , Hans-Joachim Schulze , Heinrich Brunner , Josef Bauer , Reiner Barthelmess
IPC分类号： H01L3300
CPC分类号： H01L29/1016 , H01L29/7395 , H01L29/7455 , H01L29/749
摘要： A power semiconductor components has stop zones. In order to optimize the static and dynamic losses of the power semiconductor components, the stop zone is provided with donors which have at least one donor level which lies within the band gap of silicon and is at least 200 meV away from the conduction band edge of silicon.
摘要翻译： 功率半导体元件具有停止区域。 为了优化功率半导体部件的静态和动态损耗，停止区域具有供体，其具有位于硅的带隙内的至少一个施主电平，并且距离导电带边缘至少200meV 硅。
-
7.发明授权Method for producing a stop zone in a semiconductor body and semiconductor component having a stop zone 有权用于在半导体本体中制造阻挡区域的方法和具有停止区域的半导体部件公开(公告)号：US08178411B2
公开(公告)日：2012-05-15
申请号：US12550483
申请日：2009-08-31
IPC分类号： H01L21/336 , H01L21/425
CPC分类号： H01L29/0834 , H01L21/263 , H01L21/324 , H01L29/32 , H01L29/36 , H01L29/66333 , H01L29/7395 , H01L29/861
摘要： A method for producing a buried stop zone in a semiconductor body and a semiconductor component having a stop zone, the method including providing a semiconductor body having a first and a second side and a basic doping of a first conduction type. The method further includes irradiating the semiconductor body via one of the sides with protons, as a result of which protons are introduced into a first region of the semiconductor body situated at a distance from the irradiation side. The method also includes carrying out a thermal process in which the semiconductor body is heated to a predetermined temperature for a predetermined time duration, the temperature and the duration being chosen such that hydrogen-induced donors are generated both in the first region and in a second region adjacent to the first region in the direction of the irradiation side.
摘要翻译： 一种用于在半导体本体中制造掩埋阻挡区域的方法和具有停止区域的半导体部件，所述方法包括提供具有第一和第二侧面的半导体本体和第一导电类型的基本掺杂。 该方法还包括经由一个侧面的质子照射半导体本体，其结果是将质子引入位于离辐射侧一定距离处的半导体主体的第一区域中。 该方法还包括进行热处理，其中将半导体体加热至预定温度达预定持续时间，选择温度和持续时间，使得在第一区域和第二区域都产生氢诱导的供体 在照射侧的方向上与第一区域相邻的区域。
-
8.发明申请Method for Producing a Stop Zone in a Semiconductor Body and Semiconductor Component Having a Stop Zone 有权用于在半导体体中产生停止区域的方法和具有停止区域的半导体部件公开(公告)号：US20100015818A1
公开(公告)日：2010-01-21
申请号：US12550483
申请日：2009-08-31
IPC分类号： H01L21/263
CPC分类号： H01L29/0834 , H01L21/263 , H01L21/324 , H01L29/32 , H01L29/36 , H01L29/66333 , H01L29/7395 , H01L29/861
摘要： A method for producing a buried stop zone in a semiconductor body and a semiconductor component having a stop zone, the method including providing a semiconductor body having a first and a second side and a basic doping of a first conduction type. The method further includes irradiating the semiconductor body via one of the sides with protons, as a result of which protons are introduced into a first region of the semiconductor body situated at a distance from the irradiation side. The method also includes carrying out a thermal process in which the semiconductor body is heated to a predetermined temperature for a predetermined time duration, the temperature and the duration being chosen such that hydrogen-induced donors are generated both in the first region and in a second region adjacent to the first region in the direction of the irradiation side.
摘要翻译： 一种用于在半导体本体中制造掩埋阻挡区域的方法和具有停止区域的半导体部件，所述方法包括提供具有第一和第二侧面的半导体本体和第一导电类型的基本掺杂。 该方法还包括经由一个侧面的质子照射半导体本体，其结果是将质子引入位于离辐射侧一定距离处的半导体主体的第一区域中。 该方法还包括进行热处理，其中将半导体体加热至预定温度达预定持续时间，选择温度和持续时间，使得在第一区域和第二区域都产生氢诱导的供体 在照射侧的方向上与第一区域相邻的区域。
-
9.发明申请Method for the Production of a Buried Stop Zone in a Semiconductor Component and Semiconductor Component Comprising a Buried Stop Zone 有权用于制造半导体部件中的埋置停止区域的方法和包括埋设停止区域的半导体部件公开(公告)号：US20080160732A1
公开(公告)日：2008-07-03
申请号：US12039173
申请日：2008-02-28
IPC分类号： H01L21/266
CPC分类号： H01L29/7802 , H01L21/263 , H01L29/0878 , H01L29/167 , H01L29/32 , H01L29/36 , H01L29/66136 , H01L29/66333 , H01L29/66712 , H01L29/7395 , H01L29/861
摘要： According to one embodiment, a method for the production of a stop zone in a doped zone of a semiconductor body comprises irradiating the semiconductor body with particle radiation in order to produce defects in a crystal lattice of the semiconductor body. The semiconductor body is exposed to an environment containing dopant atoms, during which dopant atoms are indiffused into the semiconductor body at an elevated temperature.
摘要翻译： 根据一个实施例，在半导体主体的掺杂区域中制造停止区域的方法包括用半导体主体照射半导体主体以产生半导体本体的晶格缺陷。 半导体体暴露在含有掺杂剂原子的环境中，在该环境中掺杂剂原子在升高的温度下扩散到半导体本体中。
-
10.发明授权Method for production of a buried stop zone in a semiconductor component and semiconductor component comprising a buried stop zone 有权一种用于在半导体部件和半导体部件中制造掩埋停止区域的方法，所述半导体部件包括掩埋停止区域公开(公告)号：US07361970B2
公开(公告)日：2008-04-22
申请号：US11083914
申请日：2005-03-18
IPC分类号： H01L31/0248
CPC分类号： H01L29/7802 , H01L21/263 , H01L29/0878 , H01L29/167 , H01L29/32 , H01L29/36 , H01L29/66136 , H01L29/66333 , H01L29/66712 , H01L29/7395 , H01L29/861
摘要： A method for the production of a stop zone in a doped zone of a semiconductor body having a first side and a second side, comprises the following method steps: applying a mask having cutouts to one of the sides of the semiconductor body, irradiating the side having the mask with proton radiation, carrying out a heat treatment method in order to produce hydrogen-induced donors in the semiconductor body.
摘要翻译： 一种用于在具有第一侧面和第二面的半导体本体的掺杂区域中制造阻挡区域的方法，包括以下方法步骤：将具有切口的掩模施加到半导体主体的一个侧面上，照射该侧面 具有质子辐射的掩模，进行热处理方法以在半导体本体中产生氢诱导的供体。
-
-
-
-
-
-
-
-
-
搜索结果
227 条记录 (耗时 0.028 秒)