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    Method of forming nitride films with high compressive stress for improved PFET device performance
    2.
    发明授权
    Method of forming nitride films with high compressive stress for improved PFET device performance 失效
    形成具有高压缩应力的氮化物薄膜以提高PFET器件性能的方法

    公开(公告)号：US07462527B2

    公开(公告)日：2008-12-09

    申请号：US11160705

    申请日：2005-07-06

    申请人： Richard A. Conti ,  Ronald P. Bourque ,  Nancy R. Klymko ,  Anita Madan ,  Michael C. Smits ,  Roy H. Tilghman ,  Kwong Hon Wong ,  Daewon Yang

    发明人： Richard A. Conti ,  Ronald P. Bourque ,  Nancy R. Klymko ,  Anita Madan ,  Michael C. Smits ,  Roy H. Tilghman ,  Kwong Hon Wong ,  Daewon Yang

    IPC分类号： H01L21/8238

    CPC分类号： H01L21/823807 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/3185 ,  H01L21/823828 ,  H01L29/7843

    摘要： A method is provided for making a FET device in which a nitride layer overlies the PFET gate structure, where the nitride layer has a compressive stress with a magnitude greater than about 2.8 GPa. This compressive stress permits improved device performance in the PFET. The nitride layer is deposited using a high-density plasma (HDP) process, wherein the substrate is disposed on an electrode to which a bias power in the range of about 50 W to about 500 W is supplied. The bias power is characterized as high-frequency power (supplied by an RF generator at 13.56 MHz). The FET device may also include NFET gate structures. A blocking layer is deposited over the NFET gate structures so that the nitride layer overlies the blocking layer; after the blocking layer is removed, the nitride layer is not in contact with the NFET gate structures. The nitride layer has a thickness in the range of about 300-2000 Å.

    摘要翻译： 提供了一种用于制造其中氮化物层覆盖PFET栅极结构的FET器件的方法，其中氮化物层具有大于约2.8GPa的量级的压缩应力。 这种压应力允许改进PFET中的器件性能。 使用高密度等离子体（HDP）工艺沉积氮化物层，其中衬底设置在供给约50W至约500W范围内的偏置功率的电极上。 偏置功率被表征为高频功率（由13.56MHz的RF发生器提供）。 FET器件还可以包括NFET栅极结构。 在NFET栅极结构上沉积阻挡层，使得氮化物层覆盖阻挡层; 在去除阻挡层之后，氮化物层不与NFET栅极结构接触。 氮化物层的厚度在约300-2000埃的范围内。

    Method of forming nitride films with high compressive stress for improved PFET device performance
    3.
    发明授权
    Method of forming nitride films with high compressive stress for improved PFET device performance 有权
    形成具有高压缩应力的氮化物薄膜以提高PFET器件性能的方法

    公开(公告)号：US07804136B2

    公开(公告)日：2010-09-28

    申请号：US11875217

    申请日：2007-10-19

    申请人： Richard A. Conti ,  Ronald P. Bourque ,  Nancy R. Klymko ,  Anita Madan ,  Michael C. Smits ,  Roy H. Tilghman ,  Kwong Hon Wong ,  Daewon Yang

    发明人： Richard A. Conti ,  Ronald P. Bourque ,  Nancy R. Klymko ,  Anita Madan ,  Michael C. Smits ,  Roy H. Tilghman ,  Kwong Hon Wong ,  Daewon Yang

    IPC分类号： H01L23/62

    CPC分类号： H01L21/823807 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/3185 ,  H01L21/823828 ,  H01L29/7843

    摘要： A method is provided for making a FET device in which a nitride layer overlies the PFET gate structure, where the nitride layer has a compressive stress with a magnitude greater than about 2.8 GPa. This compressive stress permits improved device performance in the PFET. The nitride layer is deposited using a high-density plasma (HDP) process, wherein the substrate is disposed on an electrode to which a bias power in the range of about 50 W to about 500 W is supplied. The bias power is characterized as high-frequency power (supplied by an RF generator at 13.56 MHz). The FET device may also include NFET gate structures. A blocking layer is deposited over the NFET gate structures so that the nitride layer overlies the blocking layer; after the blocking layer is removed, the nitride layer is not in contact with the NFET gate structures. The nitride layer has a thickness in the range of about 300-2000 Å.

    摘要翻译： 提供了一种用于制造其中氮化物层覆盖PFET栅极结构的FET器件的方法，其中氮化物层具有大于约2.8GPa的量级的压缩应力。 这种压应力允许改进PFET中的器件性能。 使用高密度等离子体（HDP）工艺沉积氮化物层，其中衬底设置在供给约50W至约500W范围内的偏置功率的电极上。 偏置功率被表征为高频功率（由13.56MHz的RF发生器提供）。 FET器件还可以包括NFET栅极结构。 在NFET栅极结构上沉积阻挡层，使得氮化物层覆盖阻挡层; 在去除阻挡层之后，氮化物层不与NFET栅极结构接触。 氮化物层的厚度在约300-2000埃的范围内。

    METHOD OF REPAIRING PROCESS INDUCED DIELECTRIC DAMAGE BY THE USE OF GCIB SURFACE TREATMENT USING GAS CLUSTERS OF ORGANIC MOLECULAR SPECIES
    6.
    发明申请
    METHOD OF REPAIRING PROCESS INDUCED DIELECTRIC DAMAGE BY THE USE OF GCIB SURFACE TREATMENT USING GAS CLUSTERS OF ORGANIC MOLECULAR SPECIES 有权
    通过使用有机分子物种的气体组合使用GCIB表面处理来修复过程诱导的电介质损伤的方法

    公开(公告)号：US20070224824A1

    公开(公告)日：2007-09-27

    申请号：US11609040

    申请日：2006-12-11

    申请人： Shyng-Tsong Chen ,  Nancy R. Klymko ,  Anita Madan ,  Sanjay Mehta ,  Steven E. Molis

    发明人： Shyng-Tsong Chen ,  Nancy R. Klymko ,  Anita Madan ,  Sanjay Mehta ,  Steven E. Molis

    IPC分类号： H01L21/311

    CPC分类号： H01L21/3105 ,  H01L21/31155 ,  H01L21/76808 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76831

    摘要： When an interconnect structure is built on porous ultra low k (ULK) material, the bottom and/or sidewall of the trench and/or via is usually damaged by a following metallization or cleaning process which may be suitable for dense higher dielectric materials. Embodiments of the present invention may provide a method of repairing process induced dielectric damage from forming an interconnect structure on an inter-layer dielectric (ILD) material. The method includes treating an exposed area of the ILD material to create a carbon-rich area, and metallizing the carbon-rich area. One embodiment includes providing treatment to an exposed sidewall area of the ILD material to create a carbon-rich area by irradiating the exposed area using a gas cluster ion beam (GCIB) generated through a gas including a straight chain or branched, aliphatic or aromatic hydrocarbon, and metallizing the carbon-rich area.

    摘要翻译： 当互连结构构建在多孔超低k（ULK）材料上时，沟槽和/或通孔的底部和/或侧壁通常被以下金属化或清洁工艺损坏，这可能适合于较高的介电材料。 本发明的实施例可以提供一种通过在层间电介质（ILD）材料上形成互连结构来修复工艺引起的介电损伤的方法。 该方法包括处理ILD材料的暴露区域以产生富含碳的区域，以及使富含碳的区域金属化。 一个实施例包括通过使用通过包括直链或支链，脂族或芳族烃的气体产生的气体簇离子束（GCIB）照射暴露区域来向ILD材料的暴露的侧壁区域提供处理以产生富碳区域 ，并且富含碳的区域金属化。

    Method of repairing process induced dielectric damage by the use of GCIB surface treatment using gas clusters of organic molecular species
    7.
    发明授权
    Method of repairing process induced dielectric damage by the use of GCIB surface treatment using gas clusters of organic molecular species 有权
    通过使用有机分子物种的气体簇的GCIB表面处理来修复工艺引起的介电损伤的方法

    公开(公告)号：US07838428B2

    公开(公告)日：2010-11-23

    申请号：US11609040

    申请日：2006-12-11

    申请人： Shyng-Tsong Chen ,  Nancy R. Klymko ,  Anita Madan ,  Sanjay Mehta ,  Steven E. Molis

    发明人： Shyng-Tsong Chen ,  Nancy R. Klymko ,  Anita Madan ,  Sanjay Mehta ,  Steven E. Molis

    IPC分类号： H01L21/311

    CPC分类号： H01L21/3105 ,  H01L21/31155 ,  H01L21/76808 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76831

    摘要： When an interconnect structure is built on porous ultra low k (ULK) material, the bottom and/or sidewall of the trench and/or via is usually damaged by a following metallization or cleaning process which may be suitable for dense higher dielectric materials. Embodiments of the present invention may provide a method of repairing process induced dielectric damage from forming an interconnect structure on an inter-layer dielectric (ILD) material. The method includes treating an exposed area of the ILD material to create a carbon-rich area, and metallizing the carbon-rich area. One embodiment includes providing treatment to an exposed sidewall area of the ILD material to create a carbon-rich area by irradiating the exposed area using a gas cluster ion beam (GCIB) generated through a gas including a straight chain or branched, aliphatic or aromatic hydrocarbon, and metallizing the carbon-rich area.

    摘要翻译： 当互连结构构建在多孔超低k（ULK）材料上时，沟槽和/或通孔的底部和/或侧壁通常被以下金属化或清洁工艺损坏，这可能适合于较高的介电材料。 本发明的实施例可以提供一种通过在层间电介质（ILD）材料上形成互连结构来修复工艺引起的介电损伤的方法。 该方法包括处理ILD材料的暴露区域以产生富含碳的区域，以及使富含碳的区域金属化。 一个实施例包括通过使用通过包括直链或支链，脂族或芳族烃的气体产生的气体簇离子束（GCIB）照射暴露区域来向ILD材料的暴露的侧壁区域提供处理以产生富碳区域 ，并且富含碳的区域金属化。