摘要:
A DRAM controller component generates a timing signal and transmits, to a DRAM, write data that requires a first time interval to propagate from the DRAM controller component to the DRAM and to be sampled by the DRAM on one or more edges of the timing signal, a clock signal that requires a second time interval to propagate from the DRAM controller component to the DRAM, and a write command, associated with the write data, to be sampled by the DRAM on one or more edges of the clock signal. The DRAM controller component includes series-coupled delay elements to generate respective incrementally delayed signals, and a multiplexer to select one of the delayed signals to time the transmission of the write data, such that transmission of the write data is delayed based on a difference between the first time interval and the second time interval.
摘要:
A memory controller is disclosed. In one particular exemplary embodiment, the memory controller may comprise a first transmitter to output first and second write commands synchronously with respect to a clock signal, a second transmitter to output first data using a first timing offset such that the first data arrives at a first memory device in accordance with a predetermined timing relationship with respect to a first transition of the clock signal, and a third transmitter to output second data suing a second timing offset such that the second data arrives at a second memory device in accordance with a predetermined timing relationship with respect to a second transition of the clock signal.
摘要:
Described is a memory system in which the memory core organization changes with device width. The number of physical memory banks accessed reduces with device width, resulting in reduced power usage for relatively narrow memory configurations. Increasing the number of logic memory banks for narrow memory widths reduces the likelihood of bank conflicts, and consequently improves speed performance.
摘要:
A memory controller is disclosed. In one particular exemplary embodiment, the memory controller may comprise a first transmitter to output first and second write commands synchronously with respect to a clock signal, a second transmitter to output first data using a first timing offset such that the first data arrives at a first memory device in accordance with a predetermined timing relationship with respect to a first transition of the clock signal, and a third transmitter to output second data using a second timing offset such that the second data arrives at a second memory device in accordance with a predetermined timing relationship with respect to a second transition of the clock signal.
摘要:
A memory module having a termination component. The memory module includes multiple memory devices, a termination component, a control signal path and multiple data signal paths. The control signal path is coupled to each of the memory devices and the termination component, and extends along the memory devices such that signals propagating on the control signal path propagate past each of the memory devices in succession before reaching the termination component. A unique set of data signal paths is coupled to each of the memory devices.
摘要:
A method, system and memory controller that uses adjustable write data delay settings. The memory controller includes control transmit circuitry, data transmit circuitry and timing circuitry. The control circuitry transmits a control signal to multiple memory devices via a shared control signal path. The data transmit circuitry transmits data signals to the memory devices via respective data signal paths. The timing circuitry delays transmission of data signals on each of the data signal paths by a respective time interval that is based, at least in part, on a time required for the control signal to propagate on the control signal path from the memory controller to a respective one of the memory devices.
摘要:
Techniques for increasing bandwidth in port-per-module memory systems having mismatched memory modules are disclosed. In one exemplary embodiment, the techniques are realized through a memory controller for controlling access to a memory module, wherein the memory module has a memory component with a memory core for storing data therein. The memory controller comprises a first set of interface connections for providing access to the memory module, and a second set of interface connections for providing access to the memory module. The memory controller also comprises memory access circuitry for providing memory access signals to the memory module for selecting between a first mode wherein a first portion of the memory core is accessible through the first set of interface connections and a second portion of the memory core is accessible through the second set of interface connections, and a second mode wherein both the first portion and the second portion of the memory core are accessible through the first set of interface connections.
摘要:
Techniques for increasing bandwidth in port-per-module memory systems having mismatched memory modules are disclosed. In one exemplary embodiment, the techniques are realized through a memory controller for controlling access to a memory module, wherein the memory module has a memory component with a memory core for storing data therein. The memory controller comprises a first set of interface connections for providing access to the memory module, and a second set of interface connections for providing access to the memory module. The memory controller also comprises memory access circuitry for providing memory access signals to the memory module for selecting between a first mode wherein a first portion of the memory core is accessible through the first set of interface connections and a second portion of the memory core is accessible through the second set of interface connections, and a second mode wherein both the first portion and the second portion of the memory core are accessible through the first set of interface connections.
摘要:
A memory system having first and second memory devices and a termination component. A first signal line is coupled to the first memory device to provide first data, associated with a write command, to the first memory device, and a second signal line coupled to the second memory device to provide second data, associated with the write command, to the second memory device. A control signal path is coupled to the first and second memory devices and the termination component such that the write command propagating on the control signal path propagates past the first memory device and the second memory device before reaching the termination component. A third signal line is provided to convey a clock signal that indicates when the write command propagating on the control signal path is to be sampled by the first and second memory devices.
摘要:
Described are systems that employ configurable on-die termination elements that allow users to select from two or more termination topologies. One topology is programmable to support rail-to-rail or half-supply termination. Another topology selectively includes fixed or variable filter elements, thereby allowing the termination characteristics to be tuned for different levels of speed performance and power consumption. Termination voltages and impedances might also be adjusted.