摘要:
The invention includes a lithographic system having a first source for generating radiation with a first wavelength and an alignment system with a second source for generating radiation with a second wavelength. The second wavelength is larger than the first wavelength. A marker structure is provided having a first layer and a second layer. The second layer is present either directly or indirectly on top of said first layer. The first layer has a first periodic structure and the second layer has a second periodic structure. At least one of the periodic structures has a plurality of features in at least one direction with a dimension smaller than 400 nm. Additionally, a combination of the first and second periodic structure forms a diffractive structure arranged to be illuminated by radiation with the second wavelength.
摘要:
In a device manufacturing method and lithographic apparatus wherein a pattern is transferred from a patterning device onto a substrate, a measurement target is provided on the substrate in a process enabling execution of a substrate measurement using radiation of a first wavelength. Subsequently the measurement target is transformed in a grid of conducting material, the grid having grid openings which are smaller than the first wavelength. The space in the scribe lane where the measurement target was, is now shielded and may be used again in further layers or processing steps of the substrate.
摘要:
An apparatus and method for improved latent overlay metrology is disclosed. In an embodiment, a scatterometer and an overexposed overlay target are used to obtain more robust overlay measurement. Overlay metrology and exposure may be done in parallel.
摘要:
One or more focus settings for use in a device manufacturing method is determined by printing a plurality of target markers at different focus settings and using a scatterometer, e.g. off-line, to measure a property of the target markers that is indicative of focus.
摘要:
A lithographic projection apparatus is provided with an optical system built into the wafer table for producing an image of a wafer mark that is provided on the back side of the wafer. The image is located at the plane of the front side of the wafer and can be viewed by an alignment system from the front side of the wafer. Simultaneous alignment between marks on the back and front of the wafer and a mask can be performed using a pre-existing alignment system.
摘要:
A method for performing a tilted focus test includes the steps of providing a target object, providing a projection beam of radiation using a radiation source, providing a reflective device to introduce a projected projection beam of radiation onto the target portion, introducing a first projected projection beam of radiation onto the target object using the reflective device in a first orientation, using a tilting device for tilting the reflective device to a second orientation to provide a second projection beam with a tilt relative to said first projection beam, introducing a second projected projection beam of radiation onto the target object, and determining a lateral shift of the first and second projected projection beams on the target object and determining from said lateral shift a defocus of the target object with respect to the projected projection beam.
摘要:
A metrology tool is arranged to measure a parameter of a substrate that has been provided with a pattern in a lithographic apparatus. The metrology tool includes a base frame, a substrate table constructed and arranged to hold the substrate, a sensor constructed and arranged to measure a parameter of the substrate, a displacement system configured to displace the substrate table or the sensor with respect to the other in a first direction, a balance mass, and a bearing configured to movably support the first balance mass so as to be substantially free to translate in a direction opposite of the first direction in order to counteract a displacement of the substrate table or sensor in the first direction.
摘要:
An inspection apparatus, comprising; an illumination system configured to provide an illumination beam for irradiating a target; a first detection system configured to detect radiation scattered from the target in a non-zero order diffraction direction; and the detection system comprises a dispersive element for dispersion of the radiation scattered from the target in the non-zero order diffraction direction and a radiation sensitive device constructed and arranged to measure the intensity of the radiation dispersed by the dispersive element.
摘要:
A lithographic apparatus arranged to transfer a pattern from a patterning device onto a substrate includes a reference set of gratings provided in the substrate, the reference set including two reference gratings having line elements in a first direction and one reference grating having line elements in a second, perpendicular, direction. A measurement set of gratings is provided on top of the reference set of gratings, the measurement set comprising three measurement gratings similar to the reference gratings. Two of the measurement gratings are oppositely biased in the second direction relative to the respective reference gratings. An overlay measurement device is provided to measure asymmetry of the three gratings in the reference set and the measurement set, and to derive from the measured asymmetry the overlay in both the first and second direction.