摘要:
A method and an apparatus are provided for applying a self-adaptive filter to a drifting process. The method includes processing a workpiece, measuring an output characteristic of the processed workpiece and modifying a previous estimated process state based at least on the measured output characteristic. The method further includes estimating a next process state based at least on the modified previous estimated process state.
摘要:
A method includes performing at least one process for forming a feature of a semiconductor device in accordance with an operating recipe. An electrical performance characteristic of the feature is measured. The measured electrical performance characteristic is compared to a target value for the electrical performance characteristic. At least one parameter of the operating recipe is determined based on the comparison. A system includes a process tool, a metrology tool, and a controller. The process tool is configured to perform at least one process for forming a feature of a semiconductor device in accordance with an operating recipe. The metrology tool is configured to measure an electrical performance characteristic of the feature. The controller is configured to compare the measured electrical performance characteristic to a target value for the electrical performance characteristic and determine at least one parameter of the operating recipe based on the comparison.
摘要:
A method is provided for a process control based on tool health data. The method comprises processing a workpiece using a processing tool, receiving trace data associated with the processing of the workpiece from the processing tool and determining at least one value associated with a health of a portion of the processing tool based on at least a portion of the received trace data. The method further comprises adjusting processing of another workpiece based on the determined health value.
摘要:
The present invention is generally directed to various methods of controlling exposure processes by monitoring photon levels, and various systems for accomplishing same. In one embodiment, the method comprises performing an exposure process by generating light comprised of a number of photons from a light source to expose at least a portion of a layer of photo-sensitive material, counting a number of photons incident on at least a portion of the layer of photo-sensitive material, and controlling at least one of a duration of the exposure process and an irradiance of the light source based upon the counted number of photons. In another illustrative embodiment, the method comprises performing an exposure process by generating light comprised of a number of photons from a light source to expose at least a portion of a layer of photo-sensitive material, determining a rate at which the photons impact at least a portion of the layer of photo-sensitive material, and controlling at least one of a duration of the exposure process and an irradiance of the light source based upon the determined rate of the photons impacting the layer of photo-sensitive material.
摘要:
A method and an apparatus are provided for parallel fault detection. The method comprises receiving data associated with processing of a workpiece by a first processing tool, receiving data associated with processing of a workpiece by a second processing tool and comparing at least a portion of the received data to a common fault model to determine if a fault associated with at least one of the processing of the workpiece by the first processing tool and processing of the workpiece by the second processing tool occurred.
摘要:
A method and an apparatus for performing process control at an interconnect level. A process step upon a workpiece is performed. Manufacturing data relating to an interconnect location on the workpiece is acquired. An interconnect characteristic control process is performed based upon the manufacturing data. The interconnect characteristic control process includes controlling a process relating to a structure associated with the interconnect location on the workpiece to control a characteristic relating to the interconnect location.
摘要:
A method includes retrieving a group test parameter determined based on test results associated with a plurality of integrated circuit devices. A particular integrated circuit device is tested using a test program and the group test parameter.
摘要:
A method includes processing a plurality of workpieces in accordance with an operating recipe. Metrology data associated with the processing is collected. A control model including at least one tuning parameter having a default value is provided. A plurality of perturbations is introduced to shift the tuning parameter from its default value. Control actions are generated based on the metrology data and the perturbations to the tuning parameter in the control model to modify the operating recipe. An error signal associated with each of the perturbations is generated. The default value of the tuning parameter is modified based on the error signals.
摘要:
A method includes receiving a current residual vector. The current residual vector is compared to a plurality of historical residual vectors. Each historical residual vector has an associated fault classification code. At least one of the historical residual vectors is selected responsive to determining that the current residual vector matches at least one of the historical residual vectors. A fault condition is classified based on the fault classification code associated with the selected historical residual vector.
摘要:
The present invention is generally directed to an advanced process control of the manufacture of memory devices, and a system for accomplishing same. In one illustrative embodiment, the method comprises performing at least one process operation to form at least one layer of an oxide-nitride-oxide stack of a memory cell, the stack being comprised of a first layer of oxide positioned above a first layer of polysilicon, a layer of silicon nitride positioned above the first layer of oxide, and a second layer of oxide positioned above the layer of silicon nitride. The method further comprises measuring at least one characteristic of at least one of the first layer of polysilicon, the first oxide layer, the layer of silicon nitride, and the second layer of oxide and adjusting at least one parameter of at least one process operation used to form at least one of the first oxide layer, the layer of silicon nitride and the second oxide layer if the measured at least one characteristic is not within acceptable limits.