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    Monolithic array for solid state ultraviolet light emitters
    1.
    发明授权
    Monolithic array for solid state ultraviolet light emitters 有权
    固态紫外线发射体的单片阵列

    公开(公告)号：US07482634B2

    公开(公告)日：2009-01-27

    申请号：US10950029

    申请日：2004-09-24

    申请人： Robert John Wojnarowski ,  Stanton Earl Weaver, Jr. ,  Abasifreke Udo Ebong ,  Xian An (Andrew) Cao ,  Steven Francis LeBoeuf ,  Larry Burton Rowland ,  Stephen D. Arthur

    发明人： Robert John Wojnarowski ,  Stanton Earl Weaver, Jr. ,  Abasifreke Udo Ebong ,  Xian An (Andrew) Cao ,  Steven Francis LeBoeuf ,  Larry Burton Rowland ,  Stephen D. Arthur

    IPC分类号： H01L33/00

    CPC分类号： H01L33/20 ,  H01L27/153 ,  H01L33/32

    摘要： The present invention is directed towards a source of ultraviolet energy, wherein the source is a UV-emitting LED's. In an embodiment of the invention, the UV-LED's are characterized by a base layer material including a substrate, a p-doped semiconductor material, a multiple quantum well, a n-doped semiconductor material, upon which base material a p-type metal resides and wherein the base structure has a mesa configuration, which mesa configuration may be rounded on a boundary surface, or which may be non-rounded, such as a mesa having an upper boundary surface that is flat. In other words, the p-type metal resides upon a mesa formed out of the base structure materials. In a more specific embodiment, the UV-LED structure includes n-type metallization layer, passivation layers, and bond pads positioned at appropriate locations of the device. In a more specific embodiment, the p-type metal layer is encapsulated in the encapsulating layer.

    摘要翻译： 本发明涉及一种紫外线能量源，其中源是紫外线发射的LED。 在本发明的实施例中，UV-LED的特征在于基底层材料，其包括基底，p掺杂半导体材料，多量子阱，n掺杂半导体材料，基底材料为p型金属 并且其中基部结构具有台面构造，该台面构造可以在边界表面上圆化，或者可以是非圆形的，例如具有平坦的上边界表面的台面。 换句话说，p型金属位于由基底结构材料形成的台面上。 在更具体的实施例中，UV-LED结构包括位于设备适当位置的n型金属化层，钝化层和接合焊盘。 在更具体的实施例中，p型金属层被封装在封装层中。

    METHOD FOR FABRICATING SILICON CARBIDE VERTICAL MOSFET DEVICES
    8.
    发明申请
    METHOD FOR FABRICATING SILICON CARBIDE VERTICAL MOSFET DEVICES 审中-公开
    制造碳化硅垂直MOSFET器件的方法

    公开(公告)号：US20090267141A1

    公开(公告)日：2009-10-29

    申请号：US12498630

    申请日：2009-07-07

    申请人： Kevin Sean Matocha ,  Jody Alan Fronheiser ,  Larry Burton Rowland ,  Jesse Berkley Tucker ,  Stephen Daley Arthur ,  Zachary Matthew Stum

    发明人： Kevin Sean Matocha ,  Jody Alan Fronheiser ,  Larry Burton Rowland ,  Jesse Berkley Tucker ,  Stephen Daley Arthur ,  Zachary Matthew Stum

    IPC分类号： H01L29/78 ,  H01L21/22

    CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/41766 ,  H01L29/66068

    摘要： A method of forming a vertical MOSFET device includes forming a trench within a drift layer substrate, the drift layer comprising a first polarity type, the trench generally defining a well region of a second polarity type opposite the first polarity type. An ohmic contact layer is formed within a bottom surface of the trench, the ohmic contact layer comprising a material of the second polarity type. A layer of the second polarity type is epitaxially grown over the drift layer, sidewall surfaces of the trench, and the ohmic contact layer. A layer of the first polarity type is epitaxially grown over the epitaxially grown layer of the second polarity type so as to refill the trench, and the epitaxially grown layers of the first and second polarity type are planarized so as to expose an upper surface of the drift layer substrate.

    摘要翻译： 形成垂直MOSFET器件的方法包括在漂移层衬底内形成沟槽，漂移层包括第一极性类型，沟槽通常限定与第一极性类型相反的第二极性类型的阱区。 欧姆接触层形成在沟槽的底表面内，欧姆接触层包括第二极性类型的材料。 在漂移层，沟槽的侧壁表面和欧姆接触层上外延生长第二极性类型的层。 第一极性类型的层在第二极性类型的外延生长层上外延生长，以便重新填充沟槽，并且将第一和第二极性类型的外延生长层平坦化，以暴露出第二极性类型的上表面 漂移层基板。

    Method for fabricating silicon carbide vertical MOSFET devices
    9.
    发明授权
    Method for fabricating silicon carbide vertical MOSFET devices 有权
    制造碳化硅垂直MOSFET器件的方法

    公开(公告)号：US07595241B2

    公开(公告)日：2009-09-29

    申请号：US11466488

    申请日：2006-08-23

    申请人： Kevin Sean Matocha ,  Jody Alan Fronheiser ,  Larry Burton Rowland ,  Jesse Berkley Tucker ,  Stephen Daley Arthur ,  Zachary Matthew Stum

    发明人： Kevin Sean Matocha ,  Jody Alan Fronheiser ,  Larry Burton Rowland ,  Jesse Berkley Tucker ,  Stephen Daley Arthur ,  Zachary Matthew Stum

    IPC分类号： H01L21/336

    CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/41766 ,  H01L29/66068

    摘要： A method of forming a vertical MOSFET device includes forming a trench within a drift layer substrate, the drift layer comprising a first polarity type, the trench generally defining a well region of a second polarity type opposite the first polarity type. An ohmic contact layer is formed within a bottom surface of the trench, the ohmic contact layer comprising a material of the second polarity type. A layer of the second polarity type is epitaxially grown over the drift layer, sidewall surfaces of the trench, and the ohmic contact layer. A layer of the first polarity type is epitaxially grown over the epitaxially grown layer of the second polarity type so as to refill the trench, and the epitaxially grown layers of the first and second polarity type are planarized so as to expose an upper surface of the drift layer substrate.

    摘要翻译： 形成垂直MOSFET器件的方法包括在漂移层衬底内形成沟槽，漂移层包括第一极性类型，沟槽通常限定与第一极性类型相反的第二极性类型的阱区。 欧姆接触层形成在沟槽的底表面内，欧姆接触层包括第二极性类型的材料。 在漂移层，沟槽的侧壁表面和欧姆接触层上外延生长第二极性类型的层。 第一极性类型的层在第二极性类型的外延生长层上外延生长，以便重新填充沟槽，并且将第一和第二极性类型的外延生长层平坦化，以暴露出第二极性类型的上表面 漂移层基板。