-
公开(公告)号：US5916369A
公开(公告)日：1999-06-29
申请号：US485058
申请日：1995-06-07
IPC分类号： C23C16/44 , C23C16/455 , C23C16/48 , C30B25/14 , C23C16/00
CPC分类号： C23C16/45504 , C23C16/455 , C23C16/45514 , C23C16/45561 , C23C16/481 , C30B25/14
摘要： A system of supplying processing fluid to a substrate processing apparatus having walls, the inner surfaces of which define a processing chamber in which a substrate supporting susceptor is located. The system consists of a number of fluid storages, each which stores a separate processing fluid, at least two fluid conduits along which processing fluid flows from the fluid storages to the processing apparatus and a fluid inlet which connects the fluid conduits to the processing chamber. The inlet has a separate fluid passage, corresponding to each of the fluid conduits, formed along it. Each fluid passage opens at or near an inner surface of a wall to together define a fluid mixing zone, so that fluid moving along one fluid passage is prevented from mixing with fluid moving along any other passage until reaching the mixing zone.
摘要翻译： 向具有壁的基板处理装置供给处理流体的系统，其内表面限定了处理室，基板支撑基座位于该处理室中。 该系统由许多流体储存器组成，每个流体存储器存储单独的处理流体，至少两个流体管道，处理流体从该流体流体流过流体储存器至处理装置;以及流体入口，其将流体导管连接到处理室。 入口具有与沿其形成的每个流体管道相对应的单独的流体通道。 每个流体通道在壁的内表面处或附近开口以一起限定流体混合区域，从而防止沿着一个流体通道移动的流体与沿着任何其它通道移动的流体混合直到到达混合区域。
-
公开(公告)号：US06500734B2
公开(公告)日：2002-12-31
申请号：US09325597
申请日：1999-06-02
IPC分类号： H01L2120
CPC分类号： C23C16/45574 , C23C16/45504 , C23C16/45512 , H01L21/67017 , H01L21/67023
摘要： A system for supplying processing fluid to a substrate processing apparatus having walls, the inner surfaces of which define a processing chamber in which a substrate supporting susceptor is located. The system consists of a number of fluid storages, each which stores a separate processing fluid, at least two fluid conduits along which processing fluid flows from the fluid storages to the processing apparatus and a fluid inlet which connects the fluid conduits to the processing chamber. The inlet has a separate fluid passage, corresponding to each of the fluid conduits, formed along it. Each fluid passage opens at or near an inner surface of a wall to define a fluid mixing zone, so that fluid moving along one fluid passage is prevented from mixing with fluid moving along any other passage until reaching the mixing zone.
摘要翻译： 一种用于向具有壁的基板处理装置提供处理流体的系统，其内表面限定了处理室，其中基板支撑基座位于该处理室中。 该系统由许多流体储存器组成，每个流体存储器存储单独的处理流体，至少两个流体管道，处理流体从该流体流体流过流体储存器至处理装置;以及流体入口，其将流体导管连接到处理室。 入口具有与沿其形成的每个流体管道相对应的单独的流体通道。 每个流体通道在壁的内表面处或附近打开以限定流体混合区，从而防止沿着一个流体通道移动的流体与沿着任何其它通道移动的流体混合直至到达混合区。
-
3.发明授权Process of depositing a layer of material on a wafer with susceptor back coating 失效在具有基座背涂层的晶片上沉积材料层的工艺
公开(公告)号：US5834059A
公开(公告)日：1998-11-10
申请号：US624878
申请日：1996-03-27
IPC分类号： C30B25/08 , C23C14/50 , C23C16/44 , C23C16/455 , C23C16/458 , C30B25/10 , C30B25/14 , H01L21/205 , H01L21/31 , C23C16/00
CPC分类号： C23C16/45502 , C23C16/455 , C23C16/45561 , C23C16/45563 , C23C16/4581 , C30B25/105 , C30B25/14
摘要： The present disclosure is directed to a process of depositing a layer of a material on a wafer, which comprises depositing a layer of the same material to be deposited on the wafer on the back surface of a susceptor.
摘要翻译： 本公开涉及在晶片上沉积材料层的方法，其包括在基座的背面上沉积待沉积在晶片上的相同材料的层。
-
公开(公告)号：US5725673A
公开(公告)日：1998-03-10
申请号：US719580
申请日：1996-09-25
IPC分类号： C30B25/08 , C23C14/50 , C23C16/44 , C23C16/455 , C23C16/458 , C30B25/10 , C30B25/14 , H01L21/205 , H01L21/31 , C23C16/00
CPC分类号： C23C16/45502 , C23C16/455 , C23C16/45561 , C23C16/45563 , C23C16/4581 , C30B25/105 , C30B25/14
摘要： The present disclosure is directed to an apparatus for depositing a layer of a material on a wafer. The apparatus includes a deposition chamber having an upper dome, a lower dome and a side wall between the upper and lower domes. A susceptor plate is in and extends across the deposition chamber to divide the deposition chamber into an upper portion above the susceptor plate and a lower portion below the susceptor plate. An exhaust passage formed through the side wall and is coupled to an upper passage which extends to the upper portion of the deposition chamber and is coupled to a lower passage which extends to the lower portion of the deposition chamber.
摘要翻译： 本公开涉及一种用于在晶片上沉积材料层的装置。 该装置包括具有上圆顶，下圆顶和在上下圆顶之间的侧壁的沉积室。 感受板在沉积室中并且延伸穿过沉积室，以将沉积室分成基座板上方的上部和基座板下方的下部。 排气通道，其形成为穿过侧壁并且连接到上部通道，该上部通道延伸到沉积室的上部并且联接到延伸到沉积室的下部的下部通道。
-
公开(公告)号：US5551982A
公开(公告)日：1996-09-03
申请号：US221118
申请日：1994-03-31
IPC分类号： C30B25/08 , C23C14/50 , C23C16/44 , C23C16/455 , C23C16/458 , C30B25/10 , C30B25/14 , H01L21/205 , H01L21/31 , C23C16/00
CPC分类号： C23C16/45502 , C23C16/455 , C23C16/45561 , C23C16/45563 , C23C16/4581 , C30B25/105 , C30B25/14
摘要： The present disclosure is directed to an apparatus for depositing a layer of a material on a wafer. The apparatus includes a deposition chamber having an upper dome, a lower dome and a side wall between the upper and lower domes. A susceptor plate is in and extends across the deposition chamber to divide the deposition chamber into an upper portion above the susceptor plate and a lower portion below the susceptor plate. A gas inlet manifold is in the side wall. The manifold has three inlet ports. One of the ports is connected by passages which open into the lower portion of the deposition chamber. The other two ports are connected by passages which open into the upper portion of the deposition chamber. A gas supply system is connected to the inlet ports so as to provide the same gases into the lower portion of the deposition chamber as well as into the upper portion of the deposition chamber. This allows the back surface of the susceptor plate to be coated with a layer of the same material as to be coated on the wafer prior to coating the layer on the wafer.
摘要翻译： 本公开涉及一种用于在晶片上沉积材料层的装置。 该装置包括具有上圆顶，下圆顶和在上下圆顶之间的侧壁的沉积室。 感受板在沉积室中并且延伸穿过沉积室，以将沉积室分成基座板上方的上部和基座板下方的下部。 气体入口歧管位于侧壁中。 歧管有三个入口。 一个端口通过通向沉积室的下部的通道连接。 其他两个端口通过通向沉积室的上部的通道连接。 气体供给系统连接到入口端口，以便将相同的气体提供到沉积室的下部以及沉积室的上部。 这允许在将晶片上的层涂覆之前，使基座板的背面涂覆有要涂覆在晶片上的相同材料的层。
-
公开(公告)号：US5599397A
公开(公告)日：1997-02-04
申请号：US625271
申请日：1996-03-27
IPC分类号： C30B25/08 , C23C14/50 , C23C16/44 , C23C16/455 , C23C16/458 , C30B25/10 , C30B25/14 , H01L21/205 , H01L21/31 , C23C16/00
CPC分类号： C23C16/45502 , C23C16/455 , C23C16/45561 , C23C16/45563 , C23C16/4581 , C30B25/105 , C30B25/14
摘要： The present disclosure is directed to an apparatus for depositing a layer of a material on a wafer. The apparatus includes a deposition chamber having an upper dome, a lower dome and a side wall between the upper and lower domes. A susceptor plate is in and extends across the deposition chamber to divide the deposition chamber into an upper portion above the susceptor plate and a lower portion below the susceptor plate. A gas inlet manifold is in the side wall. The manifold has three inlet ports. One of the ports is connected by passages which open into the lower portion of the deposition chamber. The other two ports are connected by passages which open into the upper portion of the deposition chamber. A gas supply system is connected to the inlet ports so as to provide the same gases into the lower portion of the deposition chamber as well as into the upper portion of the deposition chamber. This allows the back surface of the susceptor plate to be coated with a layer of the same material as to be coated on the wafer prior to coating the layer on the wafer.
摘要翻译： 本公开涉及一种用于在晶片上沉积材料层的装置。 该装置包括具有上圆顶，下圆顶和在上下圆顶之间的侧壁的沉积室。 感受板在沉积室中并且延伸穿过沉积室，以将沉积室分成基座板上方的上部和基座板下方的下部。 气体入口歧管位于侧壁中。 歧管有三个入口。 一个端口通过通向沉积室的下部的通道连接。 其他两个端口通过通向沉积室的上部的通道连接。 气体供给系统连接到入口端口，以便将相同的气体提供到沉积室的下部以及沉积室的上部。 这允许在将晶片上的层涂覆之前，使基座板的背面涂覆有要涂覆在晶片上的相同材料的层。
-
7.发明授权
公开(公告)号：US6083323A
公开(公告)日：2000-07-04
申请号：US5311
申请日：1998-01-09
申请人： David K. Carlson , Norma Riley , Roger N. Anderson
发明人： David K. Carlson , Norma Riley , Roger N. Anderson
CPC分类号： C23C16/4405 , C23C16/481 , C23C16/52 , H01L21/67248 , Y10S438/905
摘要： An apparatus and a concomitant method for controlling coolant (air) flow proximate a reaction chamber within a workpiece processing system such that the temperature of a wall of the reaction chamber is maintained at a predefined target temperature. The target temperature is typically a temperature that optimizes a process concurrently being accomplished within the chamber, e.g., utilizing one temperature during deposition processes and a different temperature during cleaning processes. The apparatus contains a temperature measuring device to measure the temperature of the chamber wall. The measured temperature is compared to the predefined target temperature. A closed loop system controls the air flow proximate the chamber walls such that the measured temperature becomes substantially equal to the target temperature. Air flow control is provided by an air flow control device located within an inlet conduit that supplies air to a shroud for channeling the air past the reaction chamber. The shroud forms a portion of a housing which supports and encloses the reaction chamber.
摘要翻译： 一种用于控制工件处理系统内的反应室附近的冷却剂（空气）流的装置和并发方法，使得反应室的壁的温度保持在预定的目标温度。 目标温度通常是优化室内同时进行的过程的温度，例如在沉积过程期间利用一个温度和在清洁过程期间不同的温度。 该装置包含用于测量室壁温度的温度测量装置。 将测量的温度与预定的目标温度进行比较。 闭环系统控制靠近室壁的空气流，使得测量的温度基本上等于目标温度。 空气流量控制由位于入口管道内的空气流量控制装置提供，该进气管道将空气供给到护罩，以将空气引导通过反应室。 护罩形成支撑并包围反应室的壳体的一部分。
-
8.发明授权
公开(公告)号：US5855677A
公开(公告)日：1999-01-05
申请号：US831797
申请日：1997-04-08
申请人： David K. Carlson , Norma Riley , Roger N. Anderson
发明人： David K. Carlson , Norma Riley , Roger N. Anderson
CPC分类号： C23C16/4405 , C23C16/481 , C23C16/52 , H01L21/67248 , Y10S438/905
摘要： An apparatus and a concomitant method for controlling coolant (air) flow proximate a reaction chamber within a workpiece processing system such that the temperature of a wall of the reaction chamber is maintained at a predefined target temperature. The target temperature is typically a temperature that optimizes a process concurrently being accomplished within the chamber, e.g., utilizing one temperature during deposition processes and a different temperature during cleaning processes. The apparatus contains a temperature measuring device to measure the temperature of the chamber wall. The measured temperature is compared to the predefined target temperature. A closed loop system controls the air flow proximate the chamber walls such that the measured temperature becomes substantially equal to the target temperature. Air flow control is provided by an air flow control device located within an inlet conduit that supplies air to a shroud for channeling the air past the reaction chamber. The shroud forms a portion of a housing which supports and encloses the reaction chamber.
摘要翻译： 一种用于控制工件处理系统内的反应室附近的冷却剂（空气）流的装置和并发方法，使得反应室的壁的温度保持在预定的目标温度。 目标温度通常是优化室内同时进行的过程的温度，例如在沉积过程期间利用一个温度和在清洁过程期间不同的温度。 该装置包含用于测量室壁温度的温度测量装置。 将测量的温度与预定的目标温度进行比较。 闭环系统控制靠近室壁的空气流，使得测量的温度基本上等于目标温度。 空气流量控制由位于入口管道内的空气流量控制装置提供，该进气管道将空气供给到护罩，以将空气引导通过反应室。 护罩形成支撑并包围反应室的壳体的一部分。
-
公开(公告)号：US5645646A
公开(公告)日：1997-07-08
申请号：US752742
申请日：1996-11-14
IPC分类号： H01L21/687 , C23C16/00
CPC分类号： H01L21/6875 , H01L21/68735
摘要： An apparatus for depositing a material on a wafer includes a susceptor plate mounted in a deposition chamber. The chamber has a gas inlet and a gas exhaust. Means are provided for heating the susceptor plate. The susceptor plate has a plurality of support posts projecting from its top surface. The support posts are arranged to support a wafer thereon with the back surface of the wafer being spaced from the surface of the susceptor plate. The support posts are of a length so that the wafer is spaced from the susceptor plate a distance sufficient to allow deposition gas to flow and/or diffuse between the wafer and the susceptor plate, but still allow heat transfer from the susceptor plate to the wafer mainly by conduction. The susceptor plate is also provided with means, such as retaining pins or a recess, to prevent lateral movement of a wafer seated on the support posts.
摘要翻译： 用于在晶片上沉积材料的设备包括安装在沉积室中的基座板。 该室具有气体入口和排气。 提供用于加热感受板的装置。 基座板具有从其顶表面突出的多个支撑柱。 支撑柱布置成在其上支撑晶片，其中晶片的后表面与基座板的表面间隔开。 支撑柱具有长度，使得晶片与基座板间隔足以允许沉积气体在晶片和基座板之间流动和/或扩散的距离，但仍允许从基座板到晶片的热传递 主要是通过传导。 基座板还设置有诸如保持销或凹部的装置，以防止位于支撑柱上的晶片的横向移动。
-
公开(公告)号：US6146464A
公开(公告)日：2000-11-14
申请号：US884243
申请日：1997-06-30
IPC分类号： H01L21/687 , C23C16/00
CPC分类号： H01L21/6875 , H01L21/68735
摘要： An apparatus for depositing a material on a wafer includes a susceptor plate mounted in a deposition chamber. The chamber has a gas inlet and a gas exhaust. Means are provided for heating the susceptor plate. The susceptor plate has a plurality of support posts projecting from its top surface. The support posts are arranged to support a wafer thereon with the back surface of the wafer being spaced from the surface of the susceptor plate. The support posts are of a length so that the wafer is spaced from the susceptor plate a distance sufficient to allow deposition gas to flow and/or diffuse between the wafer and the susceptor plate, but still allow heat transfer from the susceptor plate to the wafer mainly by conduction. The susceptor plate is also provided with means, such as retaining pins or a recess, to prevent lateral movement of a wafer seated on the support posts.
摘要翻译： 用于在晶片上沉积材料的设备包括安装在沉积室中的基座板。 该室具有气体入口和排气。 提供用于加热感受板的装置。 基座板具有从其顶表面突出的多个支撑柱。 支撑柱布置成在其上支撑晶片，其中晶片的后表面与基座板的表面间隔开。 支撑柱具有长度，使得晶片与基座板间隔足以允许沉积气体在晶片和基座板之间流动和/或扩散的距离，但仍允许从基座板到晶片的热传递 主要是通过传导。 基座板还设置有诸如保持销或凹部的装置，以防止位于支撑柱上的晶片的横向移动。
-
-
-
-
-
-
-
-
-
搜索结果
63 条记录 (耗时 0.026 秒)
