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公开(公告)号：US20100248423A1
公开(公告)日：2010-09-30
申请号：US12813552
申请日：2010-06-11
申请人： Shelby F. Nelson , David H. Levy , Roger S. Kerr
发明人： Shelby F. Nelson , David H. Levy , Roger S. Kerr
IPC分类号： H01L21/36 , C23C16/455 , C23C16/40
CPC分类号： C23C16/45551 , B33Y80/00 , C23C16/4412 , C23C16/45517 , C23C16/45519 , C23C16/45559 , C23C16/45568 , C23C16/45574 , C23C16/54
摘要： A process for depositing a thin film material on a substrate is disclosed, comprising simultaneously directing a series of gas flows from the output face of a delivery head of a thin film deposition system toward the surface of a substrate, and wherein the series of gas flows comprises at least a first reactive gaseous material, an inert purge gas, and a second reactive gaseous material, wherein the first reactive gaseous material is capable of reacting with a substrate surface treated with the second reactive gaseous material. A system capable of carrying out such a process is also disclosed.
摘要翻译： 公开了一种在衬底上沉积薄膜材料的方法，包括同时引导一系列气体流从薄膜沉积系统的输送头的输出面朝向衬底的表面，并且其中一系列气体流动 包括至少第一反应性气体材料，惰性吹扫气体和第二反应性气态材料，其中第一反应性气体材料能够与用第二反应性气态材料处理的基底表面反应。 还公开了能够进行这种处理的系统。
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公开(公告)号：US07789961B2
公开(公告)日：2010-09-07
申请号：US11620740
申请日：2007-01-08
申请人： Shelby F. Nelson , David H. Levy , Roger S. Kerr
发明人： Shelby F. Nelson , David H. Levy , Roger S. Kerr
IPC分类号： C23C16/455 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C23C16/45551 , B33Y80/00 , C23C16/4412 , C23C16/45517 , C23C16/45519 , C23C16/45559 , C23C16/45568 , C23C16/45574 , C23C16/54
摘要： A process for depositing a thin film material on a substrate is disclosed, comprising simultaneously directing a series of gas flows from the output face of a delivery head of a thin film deposition system toward the surface of a substrate, and wherein the series of gas flows comprises at least a first reactive gaseous material, an inert purge gas, and a second reactive gaseous material, wherein the first reactive gaseous material is capable of reacting with a substrate surface treated with the second reactive gaseous material. A system capable of carrying out such a process is also disclosed.
摘要翻译： 公开了一种在衬底上沉积薄膜材料的方法，包括同时引导一系列气体流从薄膜沉积系统的输送头的输出面朝向衬底的表面，并且其中一系列气体流动 包括至少第一反应性气体材料，惰性吹扫气体和第二反应性气态材料，其中第一反应性气体材料能够与用第二反应性气态材料处理的基底表面反应。 还公开了能够进行这种处理的系统。
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公开(公告)号：US20080166884A1
公开(公告)日：2008-07-10
申请号：US11620740
申请日：2007-01-08
申请人： Shelby F. Nelson , David H. Levy , Roger S. Kerr
发明人： Shelby F. Nelson , David H. Levy , Roger S. Kerr
CPC分类号： C23C16/45551 , B33Y80/00 , C23C16/4412 , C23C16/45517 , C23C16/45519 , C23C16/45559 , C23C16/45568 , C23C16/45574 , C23C16/54
摘要： A process for depositing a thin film material on a substrate is disclosed, comprising simultaneously directing a series of gas flows from the output face of a delivery head of a thin film deposition system toward the surface of a substrate, and wherein the series of gas flows comprises at least a first reactive gaseous material, an inert purge gas, and a second reactive gaseous material, wherein the first reactive gaseous material is capable of reacting with a substrate surface treated with the second reactive gaseous material. A system capable of carrying out such a process is also disclosed.
摘要翻译： 公开了一种在衬底上沉积薄膜材料的方法，包括同时引导一系列气体流从薄膜沉积系统的输送头的输出面朝向衬底的表面，并且其中一系列气体流动 包括至少第一反应性气体材料，惰性吹扫气体和第二反应性气态材料，其中第一反应性气体材料能够与用第二反应性气态材料处理的基底表面反应。 还公开了能够进行这种处理的系统。
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公开(公告)号：US20110097489A1
公开(公告)日：2011-04-28
申请号：US12606220
申请日：2009-10-27
申请人： Roger S. Kerr , David H. Levy , Shelby F. Nelson
发明人： Roger S. Kerr , David H. Levy , Shelby F. Nelson
CPC分类号： C23C16/45551 , C23C16/45563 , C23C16/45574 , C23C16/45591 , Y10T137/87571
摘要： A fluid conveyance device for thin film material deposition includes a fluid distribution manifold, a primary chamber, and a secondary fluid source. The fluid distribution manifold includes an output face that is connected in fluid communication to the primary chamber. The secondary fluid source is connected in fluid communication to the primary chamber through a plurality of conveyance ports.
摘要翻译： 用于薄膜材料沉积的流体输送装置包括流体分配歧管，初级室和次级流体源。 流体分配歧管包括与主室流体连通地连接的输出面。 二次流体源通过多个输送口与主室流体连通。
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公开(公告)号：US20140065831A1
公开(公告)日：2014-03-06
申请号：US13600287
申请日：2012-08-31
IPC分类号： H01L21/308
CPC分类号： H01L31/1884 , H01L21/02178 , H01L21/022 , H01L21/0228 , H01L21/02301 , H01L21/02315 , H01L21/02565 , H01L21/02573 , H01L21/0262 , H01L21/32 , H01L29/42384 , H01L29/4908 , H01L31/0392 , H01L31/03926 , Y02E10/50
摘要： A method of producing an inorganic thin film dielectric material layer includes providing a substrate. A first inorganic thin film dielectric material layer is deposited on the substrate using an atomic layer deposition process. The first inorganic thin film dielectric material layer is treated after its deposition. A patterned deposition inhibiting material layer is provided on the substrate. A second inorganic thin film dielectric material layer is selectively deposited on a region of the substrate where the deposition inhibiting material layer is not present using an atomic layer deposition process.
摘要翻译： 无机薄膜电介质材料层的制造方法包括提供基板。 使用原子层沉积工艺在衬底上沉积第一无机薄膜电介质材料层。 第一种无机薄膜介电材料层在沉积后进行处理。 在衬底上设置有图案化的沉积抑制材料层。 使用原子层沉积工艺，在不存在沉积抑制材料层的基板的区域上选择性地沉积第二无机薄膜电介质材料层。
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公开(公告)号：US20140065830A1
公开(公告)日：2014-03-06
申请号：US13600274
申请日：2012-08-31
IPC分类号： H01L21/311
CPC分类号： H01L21/02348 , C23C16/04 , C23C16/45525 , H01L21/02178 , H01L21/022 , H01L21/0228 , H01L21/02299 , H01L21/02334 , H01L21/0234 , H01L29/4908
摘要： A method of producing a patterned inorganic thin film dielectric stack includes providing a substrate. A first patterned deposition inhibiting material layer is provided on the substrate. A first inorganic thin film dielectric material layer is selectively deposited on a region of the substrate where the first deposition inhibiting material layer is not present using an atomic layer deposition process. The first deposition inhibiting and first inorganic thin film dielectric material layers are simultaneously treated after deposition of the first inorganic thin film dielectric material layer. A second patterned deposition inhibiting material layer is provided on the substrate. A second inorganic thin film dielectric material layer is selectively deposited on a region of the substrate where the second deposition inhibiting material layer is not present using an atomic layer deposition process. The first and second inorganic thin film dielectric material layers form a patterned inorganic thin film dielectric stack.
摘要翻译： 制造图案化无机薄膜电介质叠层的方法包括提供基板。 第一图案化沉积抑制材料层设置在基板上。 使用原子层沉积工艺，在不存在第一沉积抑制材料层的基板的区域上选择性地沉积第一无机薄膜电介质材料层。 在沉积第一无机薄膜电介质材料层之后，同时处理第一沉积抑制和第一无机薄膜电介质材料层。 第二图案化的沉积抑制材料层设置在基板上。 使用原子层沉积工艺，在不存在第二沉积抑制材料层的基板的区域上选择性地沉积第二无机薄膜电介质材料层。 第一和第二无机薄膜电介质材料层形成图案化的无机薄膜电介质叠层。
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公开(公告)号：US20140061649A1
公开(公告)日：2014-03-06
申请号：US13600323
申请日：2012-08-31
IPC分类号： H01L29/786
CPC分类号： H01L29/4908 , H01L29/66969 , H01L29/7869
摘要： A transistor includes a substrate; a gate including a first electrically conductive layer stack on the substrate; and a first inorganic thin film dielectric layer on the substrate with the first inorganic thin film dielectric layer having a first pattern. A second inorganic thin film dielectric layer, having a second pattern, is in contact with the first inorganic thin film dielectric layer. The first inorganic thin film dielectric layer and the second thin film dielectric layer have the same material composition. A third inorganic thin film dielectric layer has a third pattern. A semiconductor layer is in contact with and has the same pattern as the third inorganic thin film dielectric material layer. A source/drain includes a second electrically conductive layer stack.
摘要翻译： 晶体管包括衬底; 栅极，包括在所述衬底上的第一导电层堆叠; 以及第一无机薄膜电介质层，其具有第一图案的第一无机薄膜电介质层。 具有第二图案的第二无机薄膜电介质层与第一无机薄膜电介质层接触。 第一无机薄膜电介质层和第二薄膜电介质层具有相同的材料组成。 第三无机薄膜电介质层具有第三图案。 半导体层与第三无机薄膜电介质材料层接触并具有相同的图案。 源极/漏极包括第二导电层堆叠。
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公开(公告)号：US20140061648A1
公开(公告)日：2014-03-06
申请号：US13600308
申请日：2012-08-31
IPC分类号： H01L29/786
CPC分类号： H01L29/4908
摘要： A transistor includes a substrate; a gate including a first electrically conductive layer stack on the substrate; and a first inorganic thin film dielectric layer on the substrate with the first inorganic thin film dielectric layer having a first pattern. A second inorganic thin film dielectric layer, having a second pattern, is in contact with the first inorganic thin film dielectric layer. The first inorganic thin film dielectric layer and the second thin film dielectric layer have the same material composition. A semiconductor layer has a third pattern. A source/drain includes a second electrically conductive layer stack.
摘要翻译： 晶体管包括衬底; 栅极，包括在所述衬底上的第一导电层堆叠; 以及第一无机薄膜电介质层，其具有第一图案的第一无机薄膜电介质层。 具有第二图案的第二无机薄膜电介质层与第一无机薄膜电介质层接触。 第一无机薄膜电介质层和第二薄膜电介质层具有相同的材料组成。 半导体层具有第三图案。 源/漏包括第二导电层堆叠。
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公开(公告)号：US08791023B2
公开(公告)日：2014-07-29
申请号：US13600287
申请日：2012-08-31
IPC分类号： H01L21/311
CPC分类号： H01L31/1884 , H01L21/02178 , H01L21/022 , H01L21/0228 , H01L21/02301 , H01L21/02315 , H01L21/02565 , H01L21/02573 , H01L21/0262 , H01L21/32 , H01L29/42384 , H01L29/4908 , H01L31/0392 , H01L31/03926 , Y02E10/50
摘要： A method of producing an inorganic thin film dielectric material layer includes providing a substrate. A first inorganic thin film dielectric material layer is deposited on the substrate using an atomic layer deposition process. The first inorganic thin film dielectric material layer is treated after its deposition. A patterned deposition inhibiting material layer is provided on the substrate. A second inorganic thin film dielectric material layer is selectively deposited on a region of the substrate where the deposition inhibiting material layer is not present using an atomic layer deposition process.
摘要翻译： 无机薄膜电介质材料层的制造方法包括提供基板。 使用原子层沉积工艺在衬底上沉积第一无机薄膜电介质材料层。 第一种无机薄膜介电材料层在沉积后进行处理。 在衬底上设置有图案化的沉积抑制材料层。 使用原子层沉积工艺，在不存在沉积抑制材料层的基板的区域上选择性地沉积第二无机薄膜电介质材料层。
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公开(公告)号：US20140061795A1
公开(公告)日：2014-03-06
申请号：US13600302
申请日：2012-08-31
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L29/42384 , H01L29/4908
摘要： A transistor includes a substrate; a gate including a first electrically conductive layer stack on the substrate; and a first inorganic thin film dielectric layer on the substrate with the first inorganic thin film dielectric layer having a first pattern. A second inorganic thin film dielectric layer has a second pattern. A semiconductor layer is in contact with and has the same pattern as the second inorganic thin film dielectric material layer. A source/drain includes a second electrically conductive layer stack.
摘要翻译： 晶体管包括衬底; 栅极，包括在所述衬底上的第一导电层堆叠; 以及第一无机薄膜电介质层，其具有第一图案的第一无机薄膜电介质层。 第二无机薄膜电介质层具有第二图案。 半导体层与第二无机薄膜介电材料层接触并具有相同的图案。 源极/漏极包括第二导电层堆叠。
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