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13 条记录 (耗时 0.026 秒)

    Wafer base for silicon carbide semiconductor device
    1.
    发明授权
    Wafer base for silicon carbide semiconductor device 失效
    碳化硅半导体器件用晶圆基座

    公开(公告)号：US4767666A

    公开(公告)日：1988-08-30

    申请号：US737367

    申请日：1985-05-23

    申请人： Rointan F. Bunshah ,  James D. Parsons ,  Oscar M. Stafsudd

    发明人： Rointan F. Bunshah ,  James D. Parsons ,  Oscar M. Stafsudd

    IPC分类号： H01L21/20 ,  C30B25/06 ,  C30B29/36 ,  H01L21/203 ,  H01L21/205 ,  H01L29/24 ,  B32B7/02 ,  B32B15/04

    CPC分类号： H01L29/1608 ,  Y10T428/263

    摘要： A semiconductor device wafer base wherein devices may be fabricated in silicon carbide, the base having a compatible substrate and a beta silicon carbide overlay layer epitaxially related to the substrate, the beta silicon carbide layer being unpolytyped, single crystal, uncracked, without twins, and having integrated circuit quality surface morphology. Preferably, the substrate is a single crystal of titanium carbide, which is the same cubic lattice-type as beta silicon carbide with a lattice parameter different from that of beta silicon carbide by less than about 1%. Additionally, the thermal expansion coefficients of beta silicon carbide and titanium carbide are nearly the same, minimizing the creation of thermal stresses during cooling and heating. The beta silicon carbide is useful in fabricating semiconductor devices for use at much higher temperatures than is silicon, and for use at high power levels, at high frequencies, and in radiation hardened applications. The device base may be fabricated by any suitable technique, including reactive deposition and chemical vapor deposition.

    摘要翻译： 一种半导体器件晶片基底，其中器件可以制造在碳化硅中，所述基底具有兼容的衬底和与衬底外延相关的β碳化硅覆盖层，β碳化硅层未折射，单晶，未裂纹，无双胞胎，以及 具有集成电路质量的表面形态。 优选地，基体是碳化钛的单晶，其是与β碳化硅相同的立方晶格型，具有与β碳化硅的晶格参数不同于小于约1％的晶格参数。 此外，β碳化硅和碳化钛的热膨胀系数几乎相同，在冷却和加热期间最小化热应力的产生。 β碳化硅可用于制造在比硅高得多的温度下使用的半导体器件，并且用于高功率电平，高频率和辐射硬化应用中。 器件基底可以通过任何合适的技术制造，包括反应沉积和化学气相沉积。

    Wafer base for silicon carbide semiconductor device
    2.
    发明授权
    Wafer base for silicon carbide semiconductor device 失效
    碳化硅半导体器件用晶圆基座

    公开(公告)号：US5010035A

    公开(公告)日：1991-04-23

    申请号：US197582

    申请日：1988-05-13

    申请人： Rointan F. Bunshah ,  James D. Parsons ,  Oscar M. Stafsudd

    发明人： Rointan F. Bunshah ,  James D. Parsons ,  Oscar M. Stafsudd

    IPC分类号： H01L29/24

    CPC分类号： H01L29/1608 ,  Y10S148/148 ,  Y10S438/931

    摘要： A semiconductor device wafer base wherein devices may be fabricated in silicon carbide, the base having a compatible substrate and a beta silicon carbide overlay layer epitaxially related to the substrate, the beta silicon carbide layer being unpolytyped, single crystal, uncracked, without twins, and having integrated circuit quality surface morphology. Preferably, the substrate is a single crystal of titanium carbide, which is the same cubic lattice-type as beta silicon carbide with a lattice parameter different from that of beta silicon carbide by less than about 1%. Additionally, the thermal expansion coefficients of beta silicon carbide and titanium carbide are nearly the same, minimizing the creation of thermal stresses during cooling and heating. The beta silicon carbide is useful in fabricating semi-conductor devices for use at much higher temperatures than is silicon, and for use at high power levels, at high frequencies, and in radiation hardened applications. The device base may be fabricated by any suitable technique, including reactive deposition and chemical vapor deposition.

    摘要翻译： 一种半导体器件晶片基底，其中器件可以制造在碳化硅中，所述基底具有兼容的衬底和与衬底外延相关的β碳化硅覆层，所述β碳化硅层未折射，单晶，未裂纹，无双胞胎，以及 具有集成电路质量的表面形态。 优选地，基体是碳化钛的单晶，其是与β碳化硅相同的立方晶格型，具有与β碳化硅的晶格参数不同于小于约1％的晶格参数。 此外，β碳化硅和碳化钛的热膨胀系数几乎相同，在冷却和加热期间最小化热应力的产生。 β碳化硅可用于制造比硅高得多的温度使用的半导体器件，并且用于高功率级，高频率和辐射硬化应用。 器件基底可以通过任何合适的技术制造，包括反应沉积和化学气相沉积。

    Production of fullerenes by electron beam evaporation
    3.
    发明授权
    Production of fullerenes by electron beam evaporation 失效
    通过电子束蒸发生产富勒烯

    公开(公告)号：US5316636A

    公开(公告)日：1994-05-31

    申请号：US928994

    申请日：1992-08-12

    申请人： Rointan F. Bunshah ,  Shyankay Jou ,  Shiva Prakash ,  Hans J. Doerr

    发明人： Rointan F. Bunshah ,  Shyankay Jou ,  Shiva Prakash ,  Hans J. Doerr

    IPC分类号： C01B31/02 ,  C06B31/00

    CPC分类号： B82Y30/00 ,  B82Y40/00 ,  C01B31/0206 ,  C01B31/0213 ,  Y10S977/844

    摘要： A process and system for producing fullerenes by electron beam evaporation of a carbon target in a vacuum. A carbon target is evaporated by an electron beam in a vacuum to form a flux of carbon atoms or clusters. The evaporated carbon atoms or clusters are deposited onto collection substrates which are electrically charged and heated or neutral and chilled. The resulting carbon soot is extracted to recover fullerenes. The process produces carbon soot which is rich in C.sub.70 and higher fullerenes.

    摘要翻译： 通过真空中碳靶的电子束蒸发来制造富勒烯的方法和系统。 在真空中通过电子束蒸发碳靶以形成碳原子或团簇的通量。 将蒸发的碳原子或簇沉积在收集基板上，该基板被带电并加热或中性并冷却。 得到的碳烟被提取以回收富勒烯。 该方法产生富含C70和更高富勒烯的碳烟。

    Controlled high rate deposition of metal oxide films
    5.
    发明授权
    Controlled high rate deposition of metal oxide films 失效
    金属氧化物膜的高速沉积控制

    公开(公告)号：US5055319A

    公开(公告)日：1991-10-08

    申请号：US503298

    申请日：1990-04-02

    申请人： Rointan F. Bunshah ,  Chandra V. Deshpandey ,  Hans J. Doerr ,  Jong S. Yoon

    发明人： Rointan F. Bunshah ,  Chandra V. Deshpandey ,  Hans J. Doerr ,  Jong S. Yoon

    IPC分类号： C23C14/00 ,  C23C14/08

    CPC分类号： C23C14/0021 ,  C23C14/08

    摘要： A process for depositing metal oxides by activated reactive evaporation (ARE) wherein deposition rate and film quality is controlled by reference to the relative amounts of metal and metal oxide present on the surface of the target material. The ratio of metal surface area to metal oxide surface area required to obtain high deposition rates is achieved by maintaining a relatively high concentration of oxygen in the reaction zone. This relative ratio of metal surface area to metal oxide surface area on target material provides a continuous indirect measure of film deposition rate and quality during the ARE process.

    摘要翻译： 通过活性反应蒸发（ARE）沉积金属氧化物的方法，其中通过参照存在于目标材料表面上的金属和金属氧化物的相对量来控制沉积速率和膜质量。 通过在反应区中保持较高浓度的氧来实现获得高沉积速度所需的金属表面积与金属氧化物表面积的比例。 金属表面积与目标材料的金属氧化物表面积的相对比率提供了在ARE过程中膜沉积速率和质量的连续间接测量。

    Plasma enhanced chemical transport process for forming diamond films
    10.
    发明授权
    Plasma enhanced chemical transport process for forming diamond films 失效
    用于形成金刚石膜的等离子体增强化学传输工艺

    公开(公告)号：US5747118A

    公开(公告)日：1998-05-05

    申请号：US510483

    申请日：1995-08-02

    申请人： Rointan F. Bunshah ,  Hans J. Doerr ,  Shyankay Jou

    发明人： Rointan F. Bunshah ,  Hans J. Doerr ,  Shyankay Jou

    IPC分类号： C23C14/06 ,  C23C14/32 ,  C23C14/34 ,  C23C16/27 ,  H01J1/304 ,  B05D3/06 ,  C23C16/00

    CPC分类号： C23C16/278 ,  C23C14/0611 ,  C23C14/32 ,  C23C14/34 ,  C23C16/272 ,  H01J1/3042 ,  H01J2201/30457

    摘要： A chemical transport process which is enhanced by a plasma formed in a substantially oxygen free hydrogen environment for formation of microcrystalline diamond films at a relatively low deposition temperature and a rate of about 1 .mu.m/hr. The process, performed at 80 to 180 Torr and a current density of about 1 amp/cm.sup.2 of substrate, can be scaled to deposit films on large areas. The invention further comprises doped diamond films produced by the process, said product having a well-faceted microcrystalline structure with x-ray diffraction pattern and Raman spectra indicative of a predominately diamond structure. The doped diamond films can function as n-type and p-type semiconductors.

    摘要翻译： 一种化学传输过程，其通过在基本上无氧的氢气环境中形成的等离子体增强，用于在相对较低的沉积温度和约1m / hr的速率下形成微晶金刚石膜。 可以缩放在80至180托下进行的工艺和约1安培/厘米2的基板电流密度，从而在大面积上沉积薄膜。 本发明还包括通过该方法制备的掺杂金刚石薄膜，所述产品具有良好的具有X射线衍射图的微观结晶结构和表示主要是金刚石结构的拉曼光谱。 掺杂的金刚石膜可用作n型和p型半导体。