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公开(公告)号：US20090288688A1
公开(公告)日：2009-11-26
申请号：US11276728
申请日：2006-03-11
申请人： Ron Rulkens , Igor Ivanov , Mark Weise
发明人： Ron Rulkens , Igor Ivanov , Mark Weise
CPC分类号： H01L21/67051 , C11D3/0073 , C11D7/3218 , C11D7/3281 , C11D11/0047 , H01L21/02068
摘要： A rinse system including providing a chemical rinse including a corrosion inhibitor, and rinsing a wafer with the chemical rinse reducing defects on silicon and a dielectric, and maintaining integrity of a metal.
摘要翻译： 一种冲洗系统，包括提供包括腐蚀抑制剂的化学冲洗液，以及用硅和电介质上的化学冲洗还原缺陷冲洗晶片，并保持金属的完整性。
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公开(公告)号：US07972652B2
公开(公告)日：2011-07-05
申请号：US11549644
申请日：2006-10-14
IPC分类号： B05D5/12 , B28B19/00 , B29B15/10 , C23C18/00 , C23C20/00 , C23C24/00 , C23C26/00 , C23C28/00 , H01C17/06 , H05K3/00
CPC分类号： C23C18/1683 , C23C18/1628 , C23C18/1682
摘要： An electroless plating system includes a plating solution, and controlling reducing agents in the plating solution for deposition over outlier features smaller than about five hundred nanometers and isolated by about one thousand nanometers.
摘要翻译： 无电解电镀系统包括电镀液，并且控制电镀液中的还原剂，用于沉积超过约五百纳米并隔离约一千纳米的离子值特征。
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公开(公告)号：US08622017B2
公开(公告)日：2014-01-07
申请号：US13111859
申请日：2011-05-19
IPC分类号： B05C5/02
CPC分类号： C23C18/1683 , C23C18/1628 , C23C18/1682
摘要： An electroless plating system includes a plating solution, and controlling reducing agents in the plating solution for deposition over outlier features smaller than about five hundred nanometers and isolated by about one thousand nanometers.
摘要翻译： 无电解电镀系统包括电镀液，并且控制电镀液中的还原剂，用于沉积超过约五百纳米并隔离大约一千纳米的离子值特征。
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公开(公告)号：US20110214608A1
公开(公告)日：2011-09-08
申请号：US13111859
申请日：2011-05-19
IPC分类号： B05C3/02
CPC分类号： C23C18/1683 , C23C18/1628 , C23C18/1682
摘要： An electroless plating system includes a plating solution, and controlling reducing agents in the plating solution for deposition over outlier features smaller than about five hundred nanometers and isolated by about one thousand nanometers.
摘要翻译： 无电解电镀系统包括电镀液，并且控制电镀液中的还原剂，用于沉积超过约五百纳米并隔离约一千纳米的离子值特征。
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公开(公告)号：US20090253262A1
公开(公告)日：2009-10-08
申请号：US11549644
申请日：2006-10-14
IPC分类号： H01L21/3205 , C23C18/52 , B05C3/02
CPC分类号： C23C18/1683 , C23C18/1628 , C23C18/1682
摘要： An electroless plating system includes a plating solution, and controlling reducing agents in the plating solution for deposition over outlier features smaller than about five hundred nanometers and isolated by about one thousand nanometers.
摘要翻译： 无电解电镀系统包括电镀液，并且控制电镀液中的还原剂，用于沉积超过约五百纳米并隔离约一千纳米的离子值特征。
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6.发明申请Anti-Proliferative Combination Therapy Using Certain Platinum-Based Chemotherapeutic Agents and EGFR Inhibitors or Pyrimidine Analogues 失效使用某些基于铂的化学治疗剂和EGFR抑制剂或嘧啶类似物的抗增殖联合治疗公开(公告)号：US20090175856A1
公开(公告)日：2009-07-09
申请号：US12084740
申请日：2006-11-13
IPC分类号： A61K39/395 , A61K31/517 , A61K31/7064 , A61K31/505 , A61P35/00
CPC分类号： A61K31/555 , A61K31/505 , A61K33/24 , A61K45/06 , A61K2300/00
摘要： The present invention describes a method or uses of prevention and/or treatment of a cancer or a tumor, and in particular to a combination therapy, methods, compositions and pharmaceutical packages comprising an inhibitor of receptors of the EGFR family or a chemotherapeutically active pyrimidine analogue and certain platinum-based chemotherapeutic agents.
摘要翻译： 本发明描述了预防和/或治疗癌症或肿瘤的方法或用途，特别是涉及包含EGFR家族受体抑制剂或化学治疗活性嘧啶类似物的组合疗法，方法，组合物和药物包装 和某些铂类化疗剂。
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公开(公告)号：US20070284746A1
公开(公告)日：2007-12-13
申请号：US11742328
申请日：2007-04-30
申请人： Sergey Lopatin , Robert Fiordalice , Faivel Pintchovski , Igor Ivanov , Wen Kong , Artur Kolics
发明人： Sergey Lopatin , Robert Fiordalice , Faivel Pintchovski , Igor Ivanov , Wen Kong , Artur Kolics
IPC分类号： H01L21/82
CPC分类号： H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L21/76868 , H01L21/76874 , Y10S977/723
摘要： An integrated circuit is provided including an integrated circuit having a trench and via provided in a dielectric layer. A nano-electrode-array is over the dielectric layer in the trench and via, and a conductor is over the nano-electrode-array. The conductor and the nano-electrode-array are coplanar with a surface of the dielectric layer.
摘要翻译： 提供一种集成电路，其包括具有在电介质层中设置的沟槽和通孔的集成电路。 纳米电极阵列位于沟槽和通孔中的电介质层的上方，导体在纳米电极阵列的上方。 导体和纳米电极阵列与电介质层的表面共面。
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8.发明申请Proprietary watermark system for secure digital media and content distribution 失效专有水印系统，用于安全数字媒体和内容分发公开(公告)号：US20060193492A1
公开(公告)日：2006-08-31
申请号：US11415120
申请日：2006-05-02
申请人： Vsevolod Kuzmich , Igor Ivanov
发明人： Vsevolod Kuzmich , Igor Ivanov
IPC分类号： G06K9/00
CPC分类号： G06T1/0021 , G06T2201/0051 , G06T2201/0052
摘要： A method of generating a protected digital media content, is provided. According to an embodiment of the present invention, the method includes generating a protected digital media content, comprising: generating a first control signal for use in an authorization signature of digital media content, generating a second control signal for use in a certification of the content owner's right, and generating information about the digital media content; and adding the first control signal, the second control signal, and the information to the digital media content to provide a protected content.
摘要翻译： 提供了一种产生受保护的数字媒体内容的方法。 根据本发明的实施例，该方法包括生成受保护的数字媒体内容，包括：产生用于数字媒体内容的授权签名的第一控制信号，产生用于内容认证的第二控制信号 所有者权利，并生成有关数字媒体内容的信息; 以及将第一控制信号，第二控制信号和信息添加到数字媒体内容以提供受保护的内容。
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公开(公告)号：US20060030143A1
公开(公告)日：2006-02-09
申请号：US11199621
申请日：2005-08-09
申请人： Igor Ivanov
发明人： Igor Ivanov
IPC分类号： H01L21/4763
CPC分类号： H01L21/76841 , B82Y30/00 , C23C18/1619 , C23C18/1651 , C23C18/1682 , C23C18/1683 , C25D5/08 , C25D7/12 , C25D17/001 , C25D21/10 , H01L21/288 , H01L21/6715 , H01L21/76801 , H01L21/76826 , H01L21/76829 , H01L21/76834 , H01L21/76843 , H01L21/76846 , H01L21/76849 , H01L21/76858 , H01L21/76864 , H01L21/76867 , H01L21/76877 , H01L23/53238 , H01L2924/0002 , Y10T428/12 , Y10T428/12458 , Y10T428/24479 , Y10T428/24612 , H01L2924/00
摘要： A microelectronic topography includes a dielectric layer (DL) with a surface higher than an adjacent bulk metal feature (BMF) and further includes a barrier layer (BL) upon the BMF and extending higher than the DL. Another microelectronic topography includes a BL with a metal-oxide layer having a metal element concentration which is disproportionate relative to concentrations of the element within metal alloy layers on either side of the metal-oxide layer. A method includes forming a BL upon a BMF such that portions of a first DL adjacent to the BMF are exposed, selectively depositing a second DL upon the BL, cleaning the topography thereafter, and blanket depositing a third DL upon the cleaned topography. Another method includes polishing a microelectronic topography such that a metallization layer is coplanar with a DL and further includes spraying a deionized water based fluid upon the polished topography to remove debris from the DL.
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10.发明授权公开(公告)号：US08318534B2
公开(公告)日：2012-11-27
申请号：US13098632
申请日：2011-05-02
申请人： Alexander Gorer , Prashant Phatak , Tony Chiang , Igor Ivanov
发明人： Alexander Gorer , Prashant Phatak , Tony Chiang , Igor Ivanov
IPC分类号： H01L21/00
CPC分类号： H01L45/10 , H01L27/2463 , H01L45/1233 , H01L45/146 , H01L45/1633
摘要： Non-volatile resistive-switching memories formed using anodization are described. A method for forming a resistive-switching memory element using anodization includes forming a metal containing layer, anodizing the metal containing layer at least partially to form a resistive switching metal oxide, and forming a first electrode over the resistive switching metal oxide. In some examples, an unanodized portion of the metal containing layer may be a second electrode of the memory element.
摘要翻译： 描述了使用阳极氧化形成的非易失性电阻式开关存储器。 一种使用阳极氧化形成电阻式开关存储元件的方法包括形成含金属层，至少部分地阳极氧化含金属层以形成电阻式开关金属氧化物，以及在电阻式开关金属氧化物上形成第一电极。 在一些实例中，含金属层的未渐变部分可以是存储元件的第二电极。
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