公开(公告)号：US6071561A

公开(公告)日：2000-06-06

申请号：US242093

申请日：1999-06-16

申请人： Roy G. Gordon ,  Keith Kramer ,  Haifan Liang

发明人： Roy G. Gordon ,  Keith Kramer ,  Haifan Liang

IPC分类号： C23C16/40

CPC分类号： C23C16/407

摘要： Fims of fluorine-doped zinc oxide are deposited from vaporized precursor compounds comprising a chelate of a dialkylzinc, such as an amine chelate, an oxygen source, and a fluorine source. The coatings are highly electrically conductive, transparent to visible light, reflective to infrared radiation, absorbing to ultraviolet light, and free of carbon impurity.

摘要翻译： PCT No.PCT / US97 / 11552 Sec。 371日期1999年6月16日第 102（e）日期1999年6月16日PCT提交1997年8月13日PCT公布。 公开号WO98 / 08245 日期1998年2月26日氟掺杂氧化锌的方法由包含二烷基锌螯合物如胺螯合物，氧源和氟源的气化前体化合物沉积。 涂层具有高导电性，对可见光透明，反射红外辐射，吸收紫外光，无碳杂质。

公开(公告)号：US20130164918A1

公开(公告)日：2013-06-27

申请号：US13596387

申请日：2012-08-28

申请人： Haifan Liang ,  Jeroen Van Duren

发明人： Haifan Liang ,  Jeroen Van Duren

IPC分类号： H01L21/20

CPC分类号： H01L21/02551 ,  H01L21/02554 ,  H01L21/02568 ,  H01L21/02573 ,  H01L21/02614 ,  H01L31/0322 ,  H01L31/0326 ,  H01L31/065 ,  Y02E10/541

摘要： Methods are described for forming CZTS absorber layers in TFPV devices with graded compositions and graded bandgaps. Methods are described for utilizing at least one of Zn, Ge, or Ag to alter the bandgap within the absorber layer. Methods are described for utilizing Te, S, Se, O, Cd, Hg, or Sn to alter the bandgap within the absorber layer. Methods are described for utilizing either a 2-step process or a 4-step process to alter the bandgap within the absorber layer.

摘要翻译： 描述了用于在具有分级组成和梯度带隙的TFPV装置中形成CZTS吸收层的方法。 描述了利用Zn，Ge或Ag中的至少一种来改变吸收层内的带隙的方法。 描述了利用Te，S，Se，O，Cd，Hg或Sn来改变吸收层内的带隙的方法。 描述了利用二步法或四步法来改变吸收层内的带隙的方法。

公开(公告)号：US20130081688A1

公开(公告)日：2013-04-04

申请号：US13251509

申请日：2011-10-03

申请人： Haifan Liang ,  Hien Minh Huu Le ,  Jeroen Van Duren

发明人： Haifan Liang ,  Hien Minh Huu Le ,  Jeroen Van Duren

IPC分类号： H01L31/02

CPC分类号： H01L31/022425 ,  H01L31/022466 ,  H01L31/0322 ,  H01L31/056 ,  H01L31/073 ,  H01L31/0749 ,  Y02E10/52 ,  Y02E10/541 ,  Y02E10/543 ,  Y02P70/521

摘要： Method for forming back contact stacks for CIGS and CZTS TFPV solar cells are described wherein some embodiments include adhesion promoter layers, bulk current transport layers, stress management/diffusion barrier layers, optical reflector layers, and ohmic contact layers. Other back contact stacks include adhesion promoter layers, bulk current transport layers, diffusion barrier layers, and ohmic contact layers.

摘要翻译： 描述了用于形成CIGS和CZTS TFPV太阳能电池的后接触堆叠的方法，其中一些实施方案包括粘合促进剂层，体电流传输层，应力管理/扩散阻挡层，光反射层和欧姆接触层。 其它背接触堆叠包括粘附促进剂层，体电流传输层，扩散阻挡层和欧姆接触层。

公开(公告)号：US07772134B2

公开(公告)日：2010-08-10

申请号：US12546522

申请日：2009-08-24

申请人： Dean Jennings ,  Haifan Liang ,  Mark Yam ,  Vijay Parihar ,  Abhilash Mayur ,  Aaron Hunter ,  Bruce Adams ,  Joseph Michael Ranish

发明人： Dean Jennings ,  Haifan Liang ,  Mark Yam ,  Vijay Parihar ,  Abhilash Mayur ,  Aaron Hunter ,  Bruce Adams ,  Joseph Michael Ranish

IPC分类号： H01L21/00

CPC分类号： B23K26/0608 ,  B23K26/0604 ,  B23K26/0613 ,  B23K26/073 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  B23K26/352 ,  H01L21/02675 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/324

摘要： A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

摘要翻译： 一种热处理装置和方法，其中第一激光源例如以10.6μm发射的CO 2作为线束聚焦在硅晶片上，并且第二激光源例如在808nm处发射的GaAs激光棒是 作为围绕线束的较大波束聚焦在晶片上。 沿着线束的窄尺寸的方向同步地扫描两个光束，以在由较大的光束激活时从线束产生窄的加热脉冲。 GaAs辐射的能量大于硅带隙能量，并产生自由载流子。 CO2辐射的能量小于硅带隙能量，因此硅对其透明度不变，但长波长辐射被自由载流子吸收。

公开(公告)号：US20080230154A1

公开(公告)日：2008-09-25

申请号：US12039543

申请日：2008-02-28

申请人： Luc Van Autryve ,  Chris D. Bencher ,  Dean Jennings ,  Haifan Liang ,  Abhilash J. Mayur ,  Mark Yam ,  Wendy H. Yeh ,  Richard A. Brough

发明人： Luc Van Autryve ,  Chris D. Bencher ,  Dean Jennings ,  Haifan Liang ,  Abhilash J. Mayur ,  Mark Yam ,  Wendy H. Yeh ,  Richard A. Brough

IPC分类号： C21D1/09

CPC分类号： H01L21/02115 ,  H01L21/02274 ,  H01L21/02354 ,  H01L21/0276 ,  H01L21/26513 ,  H01L21/268 ,  H01L21/3146 ,  H01L21/324

摘要： A method of processing a substrate comprising depositing a layer comprising amorphous carbon on the substrate and then laser annealing the substrate is provided. Optionally, the layer further comprises a dopant selected from the group consisting of nitrogen, boron, phosphorus, fluorine, and combinations thereof. In one aspect, the layer comprising amorphous carbon is an anti-reflective coating and an absorber layer that absorbs electromagnetic radiation emitted by the laser and anneals a top surface layer of the substrate.

摘要翻译： 提供一种处理衬底的方法，包括在衬底上沉积包含非晶碳的层，然后激光退火衬底。 任选地，该层还包括选自氮，硼，磷，氟及其组合的掺杂剂。 一方面，包含无定形碳的层是抗反射涂层和吸收层，其吸收由激光发射的电磁辐射并退火衬底的顶表面层。

公开(公告)号：US20060234458A1

公开(公告)日：2006-10-19

申请号：US11105270

申请日：2005-04-13

申请人： Dean Jennings ,  Haifan Liang ,  Mark Yam ,  Vijay Parihar ,  Abhilash Mayur ,  Aaron Hunter ,  Bruce Adams ,  Joseph Ranish

发明人： Dean Jennings ,  Haifan Liang ,  Mark Yam ,  Vijay Parihar ,  Abhilash Mayur ,  Aaron Hunter ,  Bruce Adams ,  Joseph Ranish

IPC分类号： H01L21/336

CPC分类号： B23K26/0608 ,  B23K26/0604 ,  B23K26/0613 ,  B23K26/073 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  B23K26/352 ,  H01L21/02675 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/324

摘要： A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

摘要翻译： 将以10.6μm发光的第一激光源例如CO 2 2作为线束和第二激光源聚焦在硅晶片上的热处理装置和方法，例如， 在808nm处发射的GaAs激光棒作为围绕线束的较大光束聚焦在晶片上。 沿着线束的窄尺寸的方向同步地扫描两个光束，以在由较大的光束激活时从线束产生窄的加热脉冲。 GaAs辐射的能量大于硅带隙能量，并产生自由载流子。 CO 2辐射的能量小于硅带隙能量，因此硅对其透明，但是长波长辐射被自由载流子吸收。

公开(公告)号：US08907247B2

公开(公告)日：2014-12-09

申请号：US13485752

申请日：2012-05-31

申请人： Dean Jennings ,  Haifan Liang ,  Mark Yam ,  Vijay Parihar ,  Abhilash J. Mayur ,  Aaron Hunter ,  Bruce Adams ,  Joseph Michael Ranish

发明人： Dean Jennings ,  Haifan Liang ,  Mark Yam ,  Vijay Parihar ,  Abhilash J. Mayur ,  Aaron Hunter ,  Bruce Adams ,  Joseph Michael Ranish

IPC分类号： B23K26/06 ,  B23K26/073 ,  B23K26/00 ,  H01L21/268 ,  H01L21/324 ,  H01L21/20

CPC分类号： B23K26/0608 ,  B23K26/0604 ,  B23K26/0613 ,  B23K26/073 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  B23K26/352 ,  H01L21/02675 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/324

摘要： A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

摘要翻译： 一种热处理装置和方法，其中第一激光源例如以10.6μm发射的CO 2作为线束聚焦在硅晶片上，并且第二激光源例如在808nm处发射的GaAs激光棒是 作为围绕线束的较大波束聚焦在晶片上。 沿着线束的窄尺寸的方向同步地扫描两个光束，以在由较大的光束激活时从线束产生窄的加热脉冲。 GaAs辐射的能量大于硅带隙能量，并产生自由载流子。 CO2辐射的能量小于硅带隙能量，因此硅对其透明度不变，但长波长辐射被自由载流子吸收。

公开(公告)号：US20130164917A1

公开(公告)日：2013-06-27

申请号：US13596344

申请日：2012-08-28

申请人： Haifan Liang ,  Jeroen Van Duren

发明人： Haifan Liang ,  Jeroen Van Duren

IPC分类号： H01L21/20

CPC分类号： H01L21/02551 ,  H01L21/02554 ,  H01L21/02568 ,  H01L21/02573 ,  H01L21/02614 ,  H01L31/0322 ,  H01L31/0326 ,  H01L31/065 ,  Y02E10/541

摘要： Methods are described for forming CIGS absorber layers in TFPV devices with graded compositions and graded band gaps. Methods are described for utilizing Ag to increase the band gap at the front surface of the absorber layer. Methods are described for utilizing Al to increase the band gap at the front surface of the absorber layer. Methods are described for utilizing metal chalcogenide layers to impact the band gap and the morphology of the absorber layer.

摘要翻译： 描述了用于在具有渐变组成和分级带隙的TFPV装置中形成CIGS吸收层的方法。 描述了利用Ag增加吸收层前表面带隙的方法。 描述了利用Al增加吸收层前表面带隙的方法。 描述了利用金属硫族化物层来影响吸收层的带隙和形态的方法。

公开(公告)号：US08242407B2

公开(公告)日：2012-08-14

申请号：US12825200

申请日：2010-06-28

申请人： Dean Jennings ,  Haifan Liang ,  Mark Yam ,  Vijay Parihar ,  Abhilash Mayur ,  Aaron Hunter ,  Bruce Adams ,  Joseph Michael Ranish

发明人： Dean Jennings ,  Haifan Liang ,  Mark Yam ,  Vijay Parihar ,  Abhilash Mayur ,  Aaron Hunter ,  Bruce Adams ,  Joseph Michael Ranish

IPC分类号： B23K26/067

CPC分类号： B23K26/0608 ,  B23K26/0604 ,  B23K26/0613 ,  B23K26/073 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  B23K26/352 ,  H01L21/02675 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/324

摘要： A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

摘要翻译： 一种热处理装置和方法，其中第一激光源例如以10.6μm发射的CO 2作为线束聚焦在硅晶片上，并且第二激光源例如在808nm处发射的GaAs激光棒是 作为围绕线束的较大波束聚焦在晶片上。 沿着线束的窄尺寸的方向同步地扫描两个光束，以在由较大的光束激活时从线束产生窄的加热脉冲。 GaAs辐射的能量大于硅带隙能量，并产生自由载流子。 CO2辐射的能量小于硅带隙能量，因此硅对其透明度不变，但长波长辐射被自由载流子吸收。

公开(公告)号：US20100264123A1

公开(公告)日：2010-10-21

申请号：US12825200

申请日：2010-06-28

申请人： Dean Jennings ,  Haifan Liang ,  Mark Yam ,  Vijay Parihar ,  Abhilash J. Mayur ,  Aaron Hunter ,  Bruce Adams ,  Joseph Michael Ranish

发明人： Dean Jennings ,  Haifan Liang ,  Mark Yam ,  Vijay Parihar ,  Abhilash J. Mayur ,  Aaron Hunter ,  Bruce Adams ,  Joseph Michael Ranish

IPC分类号： B23K26/00

CPC分类号： B23K26/0608 ,  B23K26/0604 ,  B23K26/0613 ,  B23K26/073 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  B23K26/352 ,  H01L21/02675 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/324

摘要： A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

摘要翻译： 一种热处理装置和方法，其中第一激光源例如以10.6μm发射的CO 2作为线束聚焦在硅晶片上，并且第二激光源例如在808nm处发射的GaAs激光棒是 作为围绕线束的较大波束聚焦在晶片上。 沿着线束的窄尺寸的方向同步地扫描两个光束，以在由较大的光束激活时从线束产生窄的加热脉冲。 GaAs辐射的能量大于硅带隙能量，并产生自由载流子。 CO2辐射的能量小于硅带隙能量，因此硅对其透明度不变，但长波长辐射被自由载流子吸收。