公开(公告)号：US07095389B2

公开(公告)日：2006-08-22

申请号：US09953236

申请日：2001-09-17

申请人： Hisao Uehara ,  Kiyoshi Yoneda ,  Yasushi Miyajima ,  Ryoichi Yokoyama

发明人： Hisao Uehara ,  Kiyoshi Yoneda ,  Yasushi Miyajima ,  Ryoichi Yokoyama

IPC分类号： G09G3/18

CPC分类号： G09G3/3648 ,  G09G2300/0842 ,  G09G2330/021

摘要： The display device of this invention, in which the retaining circuit for retaining the image signal is provided for each of the pixel elements, is capable of operating under two operation modes, a normal operation mode and a memory mode. Since the placement of the retaining circuit 110, which requires relatively large area, is confined to the area for the pixel element electrode 17 not in between the neighboring pixel element electrodes 17, the required area for one pixel element is minimized, resulting in the size reduction of the liquid crystal display device. By placing at least a portion of the retaining circuit in the area of the pixel element electrode 17 of the neighboring pixel element, the detour of the wiring can be omitted, resulting in the efficient use of the space. By this, the area required for the retaining circuit is minimized, directly resulting in the reduction of the size of the liquid crystal display device.

公开(公告)号：US07081875B2

公开(公告)日：2006-07-25

申请号：US09953584

申请日：2001-09-17

申请人： Ryoichi Yokoyama ,  Kiyoshi Yoneda

发明人： Ryoichi Yokoyama ,  Kiyoshi Yoneda

IPC分类号： G09G3/36

CPC分类号： G09G3/3648 ,  G09G3/2011 ,  G09G3/32 ,  G09G3/3614 ,  G09G2300/0408 ,  G09G2300/0809 ,  G09G2300/0814 ,  G09G2300/0842 ,  G09G2300/0857 ,  G09G2330/02 ,  G09G2330/021 ,  G09G2340/0428

摘要： In the display device having the retaining circuit for holding the digital image data at the pixel element, the power voltage supplied to the retaining circuit 110 is set up to be at the minimum level for the retaining circuit to hold the data during the data writing period, but the voltage supplied to the retaining circuit is raised by the voltage booster 95 upon the completion of the data writing. The retaining circuit 110 takes in the digital image signal fed from the drain signal line 61 in response to the signal fed from the gate signal line 51 and holds the digital image signal. Then, the display is carried out according to the signal held by the retaining circuit 110. By this, the erroneous writing of the data to the retaining circuit is prevented. The reduction of the electric power consumption and the high density integration of the pixel elements are also possible.

摘要翻译： 在具有用于将数字图像数据保持在像素元件处的保持电路的显示装置中，提供给保持电路110的电源电压被设置为在数据写入期间保持电路保持数据的最小电平 但是在完成数据写入时，提供给保持电路的电压被升压器95升高。 保持电路110响应于从栅极信号线51馈送的信号接收从漏极信号线61馈送的数字图像信号，并保持数字图像信号。 然后，根据由保持电路110保持的信号进行显示。 由此，防止了将数据写入保持电路的错误写入。 像素元件的电力消耗和高密度积分的减少也是可能的。

公开(公告)号：US06812912B2

公开(公告)日：2004-11-02

申请号：US10113693

申请日：2002-03-28

申请人： Yasushi Miyajima ,  Ryoichi Yokoyama ,  Tsutomu Yamada ,  Kiyoshi Yoneda

发明人： Yasushi Miyajima ,  Ryoichi Yokoyama ,  Tsutomu Yamada ,  Kiyoshi Yoneda

IPC分类号： G09G336

CPC分类号： G02F1/136213

摘要： An active matrix display device employing a top gate type TFT structure has a storage capacitor Csc and a liquid crystal capacitor Clc in each pixel of a pixel section, a first electrode of the storage capacitor Csc served by a p-Si active layer of the TFT, and a second electrode formed to at least partly overlap the active layer, with an insulating layer between the active layer and the second electrode below it. When a driver section is to be built in, the driver section TFT is the same top gate type as the pixel section TFT, and an active layer is made of the same material as the active layer and has a conductive layer which is made of the same material as the second electrode with the insulating layer held between the active layer and the conductive layer below it. The pixel section can form the storage capacitor while preventing lowering of the aperture ratio. Because conditions for the polycrystalization annealing of the active layer are equal for the pixel section TFT and the driver section TFT, TFTs with the same properties can be obtained.

摘要翻译： 使用顶栅型TFT结构的有源矩阵显示装置在像素部的每个像素中具有存储电容器Csc和液晶电容器Clc，由TFT的p-Si有源层服务的存储电容器Csc的第一电极 以及形成为至少部分地与有源层重叠的第二电极，在其之间的有源层和第二电极之间具有绝缘层。 当要构建驱动器部分时，驱动器部分TFT与像素部分TFT相同的顶栅型，并且有源层由与有源层相同的材料制成并具有导电层，该导电层由 与第二电极相同的材料，其绝缘层保持在有源层和其下面的导电层之间。 像素部可以形成保持电容，同时防止开口率的降低。 由于有源层的多晶退火条件对于像素部分TFT和驱动部分TFT是相同的，因此可获得具有相同特性的TFT。

公开(公告)号：US06451636B1

公开(公告)日：2002-09-17

申请号：US09151081

申请日：1998-09-10

申请人： Yasuo Segawa ,  Ryoichi Yokoyama ,  Kiyoshi Yoneda ,  Tsutomu Yamada

发明人： Yasuo Segawa ,  Ryoichi Yokoyama ,  Kiyoshi Yoneda ,  Tsutomu Yamada

IPC分类号： H01L21338

CPC分类号： H01L21/02686 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2026 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78678 ,  H01L29/78696

摘要： Regarding an element having a channel width W greater than a pitch P of a pulse laser beam, a direction of the channel width W of a channel region CH is inclined with respect to a direction of a major axis of a line beam LB. Consequently, even if a defective crystallization region R is caused by an nonuniform intensity of an irradiated region in laser annealing forming p-Si of a p-Si TFT LCD, the whole channel width W of the channel region CH does not overlap the defective crystallization region R. Therefore, even if the defective crystallization region R is generated, element characteristics are not affected. Thus, the manufacturing yield of an excellent p-Si LCD can be enhanced.

摘要翻译： 关于通道宽度W大于脉冲激光束的间距P的元件，沟道区域CH的沟道宽度W的方向相对于线束LB的长轴的方向倾斜。 因此，即使在由p-Si TFT LCD形成p-Si的激光退火的照射区域的不均匀强度引起有缺陷的结晶区域R的情况下，沟道区域CH的整个沟道宽度W也不会与缺陷结晶 因此，即使产生不良结晶区域R，元件特性也不受影响。 因此，可以提高优异的p-Si LCD的制造成品率。

公开(公告)号：US07084052B2

公开(公告)日：2006-08-01

申请号：US10917394

申请日：2004-08-13

申请人： Kiichi Hirano ,  Naoya Sotani ,  Toshifumi Yamaji ,  Yoshihiro Morimoto ,  Kiyoshi Yoneda

发明人： Kiichi Hirano ,  Naoya Sotani ,  Toshifumi Yamaji ,  Yoshihiro Morimoto ,  Kiyoshi Yoneda

IPC分类号： H01L21/425

CPC分类号： H01L21/02667 ,  G02F1/13454 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/02686 ,  H01L21/2022 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78621 ,  H01L29/78675

摘要： A method of fabricating a thin film transistor by setting the temperature of a heat treatment for crystallizing an active layer which is formed on a substrate at a level not deforming the substrate and activating an impurity layer in a heat treatment method different from that employed for the heat treatment, and a semiconductor device prepared by forming a heat absorption film, a semiconductor film, a gate insulating film, and a gate electrode on a substrate, the heat absorption film being provided within a region substantially corresponding to the semiconductor film.

公开(公告)号：US06951495B2

公开(公告)日：2005-10-04

申请号：US10629058

申请日：2003-07-28

申请人： Kiyoshi Yoneda

发明人： Kiyoshi Yoneda

IPC分类号： H05B33/10 ,  G09F9/30 ,  H01L27/32 ,  H01L51/50 ,  H01L51/52 ,  H05B33/12 ,  H05B33/26 ,  H01J9/00

CPC分类号： H01L27/3248 ,  H01L27/3244 ,  H01L51/5209 ,  H01L2251/5315 ,  H01L2251/5353

摘要： A display apparatus includes display pixels each having a thin film transistor and an EL element formed successively forming over a substrate. The EL element has a cathode electrode connected to the source of the thin film transistor and an anode electrode, and is driven by the thin film transistor. The EL element externally emits light from the reverse side of the substrate. For example, when the cathode electrode is formed the comblike, meshlike, or gridlike pattern on the luminous layer, the light is emitted through the slits of the cathode pattern. The display apparatus is provided that can improve the aperture ratio of a display pixel and can increase the degree of freedom in deciding the size and the drive capability of a TFT element which drives an EL element.

摘要翻译： 显示装置包括各自具有薄膜晶体管和依次形成在基板上的EL元件的显示像素。 EL元件具有连接到薄膜晶体管的源极和阳极的阴极，并由薄膜晶体管驱动。 EL元件从衬底的背面向外发射光。 例如，当阴极电极在发光层上形成梳状，网状或网格状图案时，通过阴极图案的狭缝发射光。 提供了可以提高显示像素的开口率并且可以增加决定驱动EL元件的TFT元件的尺寸和驱动能力的自由度的显示装置。

公开(公告)号：US06630784B2

公开(公告)日：2003-10-07

申请号：US09258499

申请日：1999-02-26

申请人： Kiyoshi Yoneda

发明人： Kiyoshi Yoneda

IPC分类号： H01J6304

CPC分类号： H01L27/3248 ,  H01L27/3244 ,  H01L51/5209 ,  H01L2251/5315 ,  H01L2251/5353

摘要： A display apparatus includes display pixels each having a thin film transistor and an EL element formed successively forming over a substrate. The EL element has a cathode electrode connected to the source of the thin film transistor and an anode electrode, and is driven by the thin film transistor. The EL element externally emits light from the reverse side of the substrate. For example, when the cathode electrode is formed the comblike, meshlike, or gridlike pattern on the luminous layer, the light is emitted through the slits of the cathode pattern. The display apparatus is provided that can improve the aperture ratio of a display pixel and can increase the degree of freedom in deciding the size and the drive capability of a TFT element which drives an EL element.

摘要翻译： 显示装置包括各自具有薄膜晶体管和依次形成在基板上的EL元件的显示像素。 EL元件具有连接到薄膜晶体管的源极和阳极的阴极，并由薄膜晶体管驱动。 EL元件从衬底的背面向外发射光。 例如，当阴极电极在发光层上形成梳状，网状或网格状图案时，通过阴极图案的狭缝发射光。 提供了可以提高显示像素的开口率并且可以增加决定驱动EL元件的TFT元件的尺寸和驱动能力的自由度的显示装置。

公开(公告)号：US6137558A

公开(公告)日：2000-10-24

申请号：US193666

申请日：1998-11-17

申请人： Norio Koma ,  Tetsuji Omura ,  Kiyoshi Yoneda

发明人： Norio Koma ,  Tetsuji Omura ,  Kiyoshi Yoneda

IPC分类号： G02F1/1337 ,  C09K19/00 ,  C09K19/30 ,  G02F1/13 ,  G02F1/1333 ,  G02F1/136 ,  G02F1/1368 ,  G02F1/139 ,  G02F1/1343

CPC分类号： C09K19/3001 ,  G02F1/1393 ,  C09K2019/3027 ,  G02F1/133707 ,  G02F2001/133742

摘要： On a TFT substrate, a TFT using a low-temperature poly silicon thin film as an active layer is formed and a plurality of pixel electrodes are formed over the TFT and its electrode wiring, with an interlayer insulating layer between. In a common electrode formed on an opposite substrate opposite the TFT substrate with a liquid crystal layer between, an alignment controlling window for the liquid crystal is formed at a predetermined position opposite each of the pixel electrodes. A wide viewing angle is achieved by dividing an alignment area of liquid crystal molecules in one pixel area. The liquid crystal layer is vertically aligned and can be operated at a low driving voltage obtained by a poly silicon TFT by including fluorine liquid crystal molecules having negative dielectric anisotropy and fluorine side chains in the liquid crystal.

摘要翻译： 在TFT基板上，形成使用低温多晶硅薄膜作为有源层的TFT，并且在TFT及其电极布线之间形成有多个像素电极，其间具有层间绝缘层。 在与TFT基板相对的相对基板上形成有液晶层的公共电极之间，在与每个像素电极相对的预定位置处形成用于液晶的取向控制窗口。 通过在一个像素区域中划分液晶分子的取向区域来实现宽视角。 液晶层垂直取向，并且可以通过在液晶中包括具有负介电各向异性的氟液晶分子和氟侧链在多晶硅TFT获得的低驱动电压下操作。

公开(公告)号：US5895265A

公开(公告)日：1999-04-20

申请号：US821769

申请日：1997-03-20

申请人： Yasunori Inoue ,  Kazutoshi Tsujimura ,  Shinichi Tanimoto ,  Yasuhiko Yamashita ,  Kiyoshi Yoneda ,  Yoshikazu Ibara

发明人： Yasunori Inoue ,  Kazutoshi Tsujimura ,  Shinichi Tanimoto ,  Yasuhiko Yamashita ,  Kiyoshi Yoneda ,  Yoshikazu Ibara

IPC分类号： H01L23/532 ,  H01L21/44

CPC分类号： H01L23/53223 ,  H01L2924/0002

摘要： A semiconductor device includes an insulating layer and an interconnection layer having a conductive layer provided over the insulating layer. The interconnection layer is patterned by photolithography. The device further includes a cap-metal layer, which is deposited on the conductive layer and suppresses reflection of light beams at the time of patterning the interconnection layer. The cap-metal layer has any one of the following structures: a double-layered structure having a titanium nitride layer and a titanium layer located between the titanium nitride layer and the conductive layer; a double-layered structure having a titanium nitride layer and an aluminum-titanium alloy layer located between the titanium nitride layer and the conductive layer; and a single-layered structure consisting essentially of an aluminum-titanium alloy. These design ensure accurate interconnection patterning in the photolithography, and provide improved EM and SM immunities of the interconnection.

摘要翻译： 半导体器件包括绝缘层和具有设置在绝缘层上的导电层的互连层。 通过光刻将互连层图案化。 该装置还包括帽形金属层，其沉积在导电层上并抑制在构图互连层时光束的反射。 帽金属层具有以下结构之一：具有氮化钛层和位于氮化钛层和导电层之间的钛层的双层结构; 具有氮化钛层和位于氮化钛层和导电层之间的铝 - 钛合金层的双层结构; 以及主要由铝 - 钛合金组成的单层结构。 这些设计确保在光刻中精确的互连图案化，并且提供互连的改善的EM和SM抗扰度。

公开(公告)号：US5721601A

公开(公告)日：1998-02-24

申请号：US532484

申请日：1995-09-22

申请人： Toshifumi Yamaji ,  Kou Masahara ,  Nobuhiko Oda ,  Koji Suzuki ,  Shiro Nakanishi ,  Hisashi Abe ,  Kiyoshi Yoneda ,  Yoshihiro Morimoto

发明人： Toshifumi Yamaji ,  Kou Masahara ,  Nobuhiko Oda ,  Koji Suzuki ,  Shiro Nakanishi ,  Hisashi Abe ,  Kiyoshi Yoneda ,  Yoshihiro Morimoto

IPC分类号： G02F1/1343 ,  G02F1/1333 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/336 ,  H01L29/786

CPC分类号： G02F1/136227 ,  G02F2001/133357

摘要： A liquid crystal display unit is described, which includes a first substrate, a second substrate opposing to the first substrate, pixel driving elements, first and second insulation layers, a planarizing film and a liquid crystal layer. The pixel driving elements are disposed on the first substrate and between the first and second substrates. The first insulation layer is deposited over the first substrate and the pixel driving elements. The planarizing film is formed on the first insulation layer. This planarizing film provides a substantially flat surface over the first substrate to minimize a height of a step present between an area corresponding to each pixel driving element and an area locating adjacent to the pixel driving element on the first substrate. The second insulation layer is formed on the planarizing film. The display electrodes are formed on the second insulation layer and electrically connected to the pixel driving elements, respectively. The liquid crystal layer is located between the first substrate and said second substrate.

摘要翻译： 描述了一种液晶显示单元，其包括第一基板，与第一基板相对的第二基板，像素驱动元件，第一和第二绝缘层，平坦化膜和液晶层。 像素驱动元件设置在第一基板上并且在第一和第二基板之间。 第一绝缘层沉积在第一衬底和像素驱动元件上。 平坦化膜形成在第一绝缘层上。 该平坦化膜在第一基板上提供基本上平坦的表面，以使在与每个像素驱动元件相对应的区域和与第一基板上的像素驱动元件相邻定位的区域之间存在的台阶的高度最小化。 第二绝缘层形成在平坦化膜上。 显示电极分别形成在第二绝缘层上并与像素驱动元件电连接。 液晶层位于第一基板和第二基板之间。