摘要:
In accordance with one aspect of this invention, a multi charged particle beam writing apparatus includes an aperture member, in which a plurality of openings are formed, configured to form multi-beams by making portions of the charged particle beam pass through the plurality of openings; a writing processing control unit configured to control writing processing so that a plurality of beams having passed through different openings among the plurality of openings are arranged to align on the target object; and a shot interval adjusting unit configured to adjust shot intervals among beams so that a maximum shot interval among beams being a control grid interval defined by a predetermined quantization size or a size which is prescribed within a predetermined range from the predetermined quantization size, or less when the shot intervals among beams which are arranged to align on the target object are different depending on a place.
摘要:
In accordance with one aspect of this invention, a multi charged particle beam writing apparatus includes an aperture member, in which a plurality of openings are formed, configured to form multi-beams by making portions of the charged particle beam pass through the plurality of openings; a plurality of blankers configured to perform blanking-deflect regarding beams corresponding to the multi-beams; a writing processing control unit configured to control writing processing with a plurality of beams having passed through different openings among the plurality of openings being irradiated on the target object at a predetermined control grid interval; and a dose controlling unit configured to variably control a dose of a beam associated with deviation according to a deviation amount when an interval between the plurality of beams irradiated is deviated from the control grid interval.
摘要:
In accordance with one aspect of this invention, a multi charged particle beam writing apparatus includes an aperture member, in which a plurality of openings are formed, configured to form multi-beams by making portions of the charged particle beam pass through the plurality of openings; a writing processing control unit configured to control writing processing so that a plurality of beams having passed through different openings among the plurality of openings are arranged to align on the target object; and a shot interval adjusting unit configured to adjust shot intervals among beams so that a maximum shot interval among beams being a control grid interval defined by a predetermined quantization size or a size which is prescribed within a predetermined range from the predetermined quantization size, or less when the shot intervals among beams which are arranged to align on the target object are different depending on a place.
摘要:
In accordance with one aspect of this invention, a multi charged particle beam writing apparatus includes an aperture member, in which a plurality of openings are formed, configured to form multi-beams by making portions of the charged particle beam pass through the plurality of openings; a plurality of blankers configured to perform blanking-deflect regarding beams corresponding to the multi-beams; a writing processing control unit configured to control writing processing with a plurality of beams having passed through different openings among the plurality of openings being irradiated on the target object at a predetermined control grid interval; and a dose controlling unit configured to variably control a dose of a beam associated with deviation according to a deviation amount when an interval between the plurality of beams irradiated is deviated from the control grid interval.
摘要:
An optical element includes two electrodes 1 and 2 arranged at a distance to oppose each other and configured to converge an electron beam. The opposing surfaces of the electrodes 1 and 2 are so formed as to be cylindrically symmetrical along the beam passing direction and to form curves obtained by deforming hyperbolas in a direction perpendicular to the beam passing direction, in order that an electric field whose effective part except for an arbitrary constant of the field potential is given by.phi.=(k/2)r.sup.2 -.alpha.lnr-kz.sup.2is spatially partially formed in a cylindrical coordinate system defined by (r, z, .theta.).
摘要:
In a method for correcting astigmatism and focusing in a charged particle optical lens-barrel, according to the invention, Fourier transformation data items are obtained, which indicate images obtained by scanning a sample with a charged particle beam when the focal distance of an objective lens is set to each of at least two different values. Then, the configuration of the section of the beam is determined on the basis of the difference between the data items, thereby performing astigmatism correction and focusing. As a result, a charged particle microscope can perform highly accurate astigmatism correction and focusing during observation, irrespective of the surface configuration of the sample or the beam section on the sample.
摘要:
A synchrotron-type accelerator of the invention has a torus-shaped beam duct and an acceleration section inserted in the beam duct. The acceleraton section has an accelerating cavity communicating with the interior of the beam duct. An RF electric field is applied to the interior of the accelerating cavity. A damping antenna such as a loop antenna is arranged in the accelerating cavity. The damping antenna is supported to be movable in a direction with proper angle to the axis of the accelerating cavity and is connected to a linear drive unit arranged outside the acceleration section. The linear drive unit moves the damping antenna in a direction with proper angle to the axis of the accelerating cavity, so that an insertion amount of the damping antenna with respect to the accelerating cavity is varied.
摘要:
According to one embodiment, an electron beam irradiation apparatus comprises an objective lens configured to irradiate a specimen surface with an electron beam, an electron detector which is provided between the objective lens and the specimen surface and which is configured to detect reflected electrons or secondary electrons emitted from the specimen surface, and an antireflection mechanism which is provided between the electron detector and the specimen surface. The antireflection mechanism has a plurality of holes following spiral trajectories of reflected electrons or secondary electrons emitted from the specimen surface and is configured to prevent the reflected electrons or secondary electrons from being re-reflected toward the specimen surface and to direct a part of the reflected electrons or secondary electrons to the electron detector.
摘要:
A pattern forming method is proposed for easy correction of a pattern-size variation occurring in an etching process. An energy beam is radiated onto a resist-applied target while the energy beam is adjusted to correct the pattern-size variation occurring in the etching process. The resist on the target is developed to form a resist pattern. The target is etched with the resist pattern as a mask, thus forming patterns thereon.
摘要:
A pattern forming method is proposed for easy correction of a pattern-size variation occurring in an etching process. An energy beam is radiated onto a resist-applied target while the energy beam is adjusted to correct the pattern-size variation occurring in the etching process. The resist on the target is developed to form a resist pattern. The target is etched with the resist pattern as a mask, thus forming patterns thereon.