公开(公告)号：US20090284156A1

公开(公告)日：2009-11-19

申请号：US12465319

申请日：2009-05-13

Applicant: SAMER BANNA ,  VALENTIN TODOROW ,  KARTIK RAMASWAMY

Inventor： SAMER BANNA ,  VALENTIN TODOROW ,  KARTIK RAMASWAMY

IPC: H05B31/26

CPC classification number: H01J37/32146 ,  H01J37/321 ,  H01J37/32155 ,  H01J37/32174

Abstract: Embodiments of the present invention generally provide methods and apparatus for pulsed plasma processing over a wide process window. In some embodiments, an apparatus may include an RF power supply having frequency tuning and a matching network coupled to the RF power supply that share a common sensor for reading reflected RF power reflected back to the RF power supply. In some embodiments, an apparatus may include an RF power supply having frequency tuning and a matching network coupled to the RF power supply that share a common sensor for reading reflected RF power reflected back to the RF power supply and a common controller for tuning each of the RF power supply and the matching network.

Abstract translation: 本发明的实施例一般提供了用于在宽处理窗口上脉冲等离子体处理的方法和装置。 在一些实施例中，装置可以包括具有频率调谐的RF电源和耦合到RF电源的匹配网络，共享用于读取反射回RF电源的反射RF功率的公共传感器。 在一些实施例中，装置可以包括具有频率调谐的RF电源和耦合到RF电源的匹配网络，共享用于读取反射回RF电源的反射RF功率的公共传感器，以及用于调谐每个 射频电源和匹配网络。

公开(公告)号：US20110023780A1

公开(公告)日：2011-02-03

申请号：US12511377

申请日：2009-07-29

Applicant: KARTIK RAMASWAMY ,  HIROJI HANAWA ,  KENNETH S. COLLINS ,  LAWRENCE WONG ,  SAMER BANNA ,  ANDREW NGUYEN

Inventor： KARTIK RAMASWAMY ,  HIROJI HANAWA ,  KENNETH S. COLLINS ,  LAWRENCE WONG ,  SAMER BANNA ,  ANDREW NGUYEN

IPC: H03H7/38 ,  B05C13/00

CPC classification number: H01P7/04

Abstract: Embodiments of impedance matching networks are provided herein. In some embodiments, an impedance matching network may include a coaxial resonator having an inner and an outer conductor. A tuning capacitor may be provided for variably controlling a resonance frequency of the coaxial resonator. The tuning capacitor may be formed by a first tuning electrode and a second tuning electrode and an intervening dielectric, wherein the first tuning electrode is formed by a portion of the inner conductor. A load capacitor may be provided for variably coupling energy from the inner conductor to a load. The load capacitor may be formed by the inner conductor, an adjustable load electrode, and an intervening dielectric.

Abstract translation: 本文提供了阻抗匹配网络的实施例。 在一些实施例中，阻抗匹配网络可以包括具有内部和外部导体的同轴谐振器。 可以提供调谐电容器以可变地控制同轴谐振器的谐振频率。 调谐电容器可以由第一调谐电极和第二调谐电极和中间电介质形成，其中第一调谐电极由内部导体的一部分形成。 可以提供负载电容器，用于可变地耦合从内部导体到负载的能量。 负载电容器可以由内部导体，可调负载电极和中间电介质形成。

公开(公告)号：US20100013572A1

公开(公告)日：2010-01-21

申请号：US12506658

申请日：2009-07-21

Applicant: STEVEN C. SHANNON ,  JANG GYOO YANG ,  MATTHEW L. MILLER ,  KARTIK RAMASWAMY ,  JAMES P. CRUSE

Inventor： STEVEN C. SHANNON ,  JANG GYOO YANG ,  MATTHEW L. MILLER ,  KARTIK RAMASWAMY ,  JAMES P. CRUSE

IPC: H03H7/38

CPC classification number: H03H7/38

Abstract: Apparatus and methods are provided for a power matching apparatus for use with a processing chamber. In one aspect of the invention, a power matching apparatus is provided including a first RF power input coupled to a first adjustable capacitor, a second RF power input coupled to a second adjustable capacitor, a power junction coupled to the first adjustable capacitor and the second adjustable capacitor, a receiver circuit coupled to the power junction, a high voltage filter coupled to the power junction and the high voltage filter has a high voltage output, a voltage/current detector coupled to the power junction and a RF power output connected to the voltage/current detector.

Abstract translation: 提供了用于与处理室一起使用的功率匹配装置的装置和方法。 在本发明的一个方面，提供了一种功率匹配装置，其包括耦合到第一可调电容器的第一RF功率输入端，耦合到第二可调电容器的第二RF功率输入端，耦合到第一可调电容器的功率端， 耦合到功率结的接收器电路，耦合到功率结的高电压滤波器和高压滤波器具有高电压输出，耦合到功率结的电压/电流检测器和连接到功率结的RF功率输出 电压/电流检测器。

公开(公告)号：US20090230089A1

公开(公告)日：2009-09-17

申请号：US12047492

申请日：2008-03-13

Applicant: KALLOL BERA ,  SHAHID RAUF ,  AJIT BALAKRISHNA ,  KENNETH S. COLLINS ,  KARTIK RAMASWAMY ,  HIROJI HANAWA

Inventor： KALLOL BERA ,  SHAHID RAUF ,  AJIT BALAKRISHNA ,  KENNETH S. COLLINS ,  KARTIK RAMASWAMY ,  HIROJI HANAWA

IPC: B01J19/08 ,  C23F1/00

CPC classification number: H01J37/32174 ,  H01J37/32009 ,  H01J37/32045 ,  H01J37/32091

Abstract: A method and apparatus for controlling plasma uniformity is disclosed. When etching a substrate, a non-uniform plasma may lead to uneven etching of the substrate. Impedance circuits may alleviate the uneven plasma to permit more uniform etching. The impedance circuits may be disposed between the chamber wall and ground, the showerhead and ground, and the cathode can and ground. The impedance circuits may comprise one or more of an inductor and a capacitor. The inductance of the inductor and the capacitance of the capacitor may be predetermined to ensure the plasma is uniform. Additionally, the inductance and capacitance may be adjusted during processing or between processing steps to suit the needs of the particular process.

Abstract translation: 公开了一种用于控制等离子体均匀性的方法和装置。 当蚀刻基板时，不均匀的等离子体可能导致基板的不均匀蚀刻。 阻抗电路可以减轻不均匀的等离子体以允许更均匀的蚀刻。 阻抗电路可以设置在室壁和地面之间，淋浴头和地面以及阴极罐和地面之间。 阻抗电路可以包括电感器和电容器中的一个或多个。 电感器的电感和电容器的电容可以被预先确定，以确保等离子体是均匀的。 此外，可以在处理期间或在处理步骤之间调整电感和电容以适应特定工艺的需要。

公开(公告)号：US20100188077A1

公开(公告)日：2010-07-29

申请号：US12360664

申请日：2009-01-27

Applicant: KARTIK RAMASWAMY ,  HIROJI HANAWA ,  LAWRENCE WONG ,  CHINH DINH

Inventor： KARTIK RAMASWAMY ,  HIROJI HANAWA ,  LAWRENCE WONG ,  CHINH DINH

IPC: G01R33/02

CPC classification number: G01R33/0206 ,  G01R33/0023

Abstract: Embodiments of sensor devices for characterizing magnetic fields formed in substrate processing systems and methods of use thereof are provided herein. In some embodiments, an apparatus for characterizing a magnetic field in a substrate processing system may include a carrier having a form substantially similar to a substrate to be processed in the substrate processing system. One or more magnetic sensors are disposed on the carrier for measuring a magnitude of a magnetic field formed in the processing system in an x-, y-, and z-direction. A microprocessor is coupled to the one or more magnetic sensors to sample data representative of the magnitude of the magnetic field in the x-, y-, and z-directions proximate a position of each sensor. A memory device is coupled to the microprocessor for storing the sampled data. A power source is provided to supply power to each magnetic sensor and the microprocessor.

Abstract translation: 本文提供了用于表征在基板处理系统中形成的磁场的传感器装置的实施例及其使用方法。 在一些实施例中，用于表征衬底处理系统中的磁场的装置可以包括具有基本上类似于在衬底处理系统中要处理的衬底的形式的载体。 一个或多个磁传感器设置在载体上，用于测量在x，y和z方向上在处理系统中形成的磁场的大小。 微处理器耦合到一个或多个磁性传感器以对表示在每个传感器的位置附近的x，y和z方向上的磁场的大小的数据进行采样。 存储器件耦合到微处理器以存储采样数据。 提供电源以向每个磁传感器和微处理器供电。

公开(公告)号：US20090257927A1

公开(公告)日：2009-10-15

申请号：US12371864

申请日：2009-02-16

Applicant: KARTIK RAMASWAMY ,  HIROJI HANAWA ,  KENNETH S. COLLINS ,  LAWRENCE WONG ,  ANDREW NGUYEN ,  STEVEN LANE

Inventor： KARTIK RAMASWAMY ,  HIROJI HANAWA ,  KENNETH S. COLLINS ,  LAWRENCE WONG ,  ANDREW NGUYEN ,  STEVEN LANE

IPC: H01P1/20 ,  H01P7/04 ,  H05H1/24

CPC classification number: H01P7/04

Abstract: A method for constructing a distributed element coaxial resonator includes folding a coaxial resonator to provide a structure having a decreased physical length compared to its electrical length. In various embodiments, the resonator is tuned to affect a standing wave when excited by a signal of a specific wavelength. The coaxial resonator includes inner, middle and outer conductor sections, wherein the characteristic impedance is maintained throughout the resonator.

Abstract translation: 一种用于构造分布式元件同轴谐振器的方法包括折叠同轴谐振器以提供与其电长度相比具有减小的物理长度的结构。 在各种实施例中，当由特定波长的信号激发时，谐振器被调谐以影响驻波。 同轴谐振器包括内部，中部和外部导体部分，其中在整个谐振器中保持特征阻抗。

公开(公告)号：US20110162798A1

公开(公告)日：2011-07-07

申请号：US12899048

申请日：2010-10-06

Applicant: CHUNLEI ZHANG ,  SERGIO F. SHOJI ,  ANDREY SEMENIN ,  KARTIK RAMASWAMY ,  JAMES P. CRUSE ,  BRYAN LIAO

Inventor： CHUNLEI ZHANG ,  SERGIO F. SHOJI ,  ANDREY SEMENIN ,  KARTIK RAMASWAMY ,  JAMES P. CRUSE ,  BRYAN LIAO

IPC: C23F1/08 ,  H03H7/38

CPC classification number: H03H7/40 ,  H01J37/32183 ,  H01J37/32935 ,  H05H1/46

Abstract: Methods and apparatus for tuning matching networks are provided herein. A method of tuning a matching network includes providing a matching network coupling an RF source to a load, the matching network having a tunable element disposed at a first set point; increasing a value of the tunable element by a first step above the first set point; sensing a first adjusted value of a reflected RF power; decreasing the value of the tunable element by the first step below the first set point; sensing a second adjusted value of the reflected RF power; comparing the first and the second adjusted values of the reflected RF power; and moving the tunable element to a second set point that corresponds to a position having a lowest adjusted value of the reflected RF power. The method may be repeated until the reflected RF power falls within an acceptable reflected RF power range.

Abstract translation: 本文提供了用于调整匹配网络的方法和装置。 调整匹配网络的方法包括提供将RF源耦合到负载的匹配网络，所述匹配网络具有设置在第一设定点处的可调谐元件; 通过在第一设定点之上的第一步增加可调元件的值; 感测反射RF功率的第一调整值; 将可调谐元件的值降低到低于第一设定点的第一步; 感测反射RF功率的第二调整值; 比较反射RF功率的第一和第二调整值; 以及将所述可调元件移动到对应于具有所述反射RF功率的最低调整值的位置的第二设定点。 可以重复该方法，直到反射的RF功率落在可接受的反射RF功率范围内。

公开(公告)号：US20110031216A1

公开(公告)日：2011-02-10

申请号：US12851606

申请日：2010-08-06

Applicant: BRYAN LIAO ,  KATSUMASA KAWASAKI ,  YASHASWINI PATTAR ,  SERGIO FUKUDA SHOJI ,  DUY D. NGUYEN ,  KARTIK RAMASWAMY ,  ANKUR AGARWAL ,  PHILLIP STOUT ,  SHAHID RAUF

Inventor： BRYAN LIAO ,  KATSUMASA KAWASAKI ,  YASHASWINI PATTAR ,  SERGIO FUKUDA SHOJI ,  DUY D. NGUYEN ,  KARTIK RAMASWAMY ,  ANKUR AGARWAL ,  PHILLIP STOUT ,  SHAHID RAUF

IPC: C23F1/00

CPC classification number: C23F1/00 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32165 ,  H01L21/31116

Abstract: Methods for processing a substrate are provided herein. In some embodiments, a method of etching a dielectric layer includes generating a plasma by pulsing a first RF source signal having a first duty cycle; applying a second RF bias signal having a second duty cycle to the plasma; applying a third RF bias signal having a third duty cycle to the plasma, wherein the first, second, and third signals are synchronized; adjusting a phase variance between the first RF source signal and at least one of the second or third RF bias signals to control at least one of plasma ion density non-uniformity in the plasma or charge build-up on the dielectric layer; and etching the dielectric layer with the plasma.

Abstract translation: 本文提供了处理基板的方法。 在一些实施例中，蚀刻介电层的方法包括通过脉冲具有第一占空比的第一RF源信号来产生等离子体; 向所述等离子体施加具有第二占空比的第二RF偏置信号; 向所述等离子体施加具有第三占空比的第三RF偏置信号，其中所述第一，第二和第三信号被同步; 调整所述第一RF源信号和所述第二或第三RF偏置信号中的至少一个之间的相位差，以控制所述等离子体中的等离子体或电荷积聚中的等离子体离子密度不均匀性中的至少一个; 并用等离子体蚀刻电介质层。