Abstract:
A bulk-acoustic resonator module includes: a module substrate; a bulk-acoustic resonator connected to the module substrate by a connection terminal and disposed spaced apart from the module substrate; and a sealing portion sealing the bulk-acoustic resonator. The bulk-acoustic resonator includes a resonating portion disposed opposite to an upper surface of the module substrate. A space is disposed between the resonating portion and the upper surface of the module substrate.
Abstract:
A wafer level package includes a wafer member having inner cavities in which circuit elements are disposed, element wall members disposed on an internal surface of the wafer member and enclosing element sections in which the circuit elements are disposed, and clearance wall members disposed on external surfaces of the element wall members and dividing a space between the element sections into clearance sections.
Abstract:
An acoustic transducer includes a substrate member including a first region having one or more first holes formed therein, and a second region, a vibration member including a third region facing the first region and a fourth region facing the second region and having one or more second holes formed therein, and a support member extended from a boundary region between the first region and the second region to a boundary region between the third region and the fourth region to allow the substrate member and the vibration member to be spaced apart from each other by a predetermined interval.
Abstract:
A semiconductor package includes a main substrate, a resonator device disposed above the main substrate, a wiring portion connected to the resonator device, an electrical connection structure connected to the wiring portion and the main substrate, an encapsulant encapsulating the resonator device and the electrical connection structure, and a heat dissipation member bonded to and mounted on the resonator device. A cavity is provided in the resonator device, and is formed between the resonance portion and a resonator device substrate provided in the resonator device.
Abstract:
A resonator package and a method of manufacturing the same are provided. The method of manufacturing a resonator package involves etching a lower electrode with a hardmask, in which only a portion of a thickness of the lower electrode is etched to shape the lower electrode.
Abstract:
A bulk acoustic filter device includes: a substrate; a cavity forming layer disposed on the substrate so as to form a cavity; a lower electrode disposed on the cavity; a piezoelectric layer disposed on the lower electrode; an upper electrode disposed on the piezoelectric layer; and a temperature compensation layer disposed below the lower electrode and in the cavity portion.
Abstract:
Embodiments of the invention provide a cap module for MEMS including a substrate, a first negative photoresist, which is formed on one surface of the substrate, and a second negative photoresist, which is formed on one surface of the first negative photoresist.
Abstract:
A bulk acoustic wave resonator device includes: a substrate; a lower electrode disposed on the substrate; a piezoelectric layer disposed over a portion of the lower electrode; an upper electrode disposed on the piezoelectric layer; and a shape control layer covering an edge of a cavity disposed between the substrate and the lower electrode, wherein tensile stress is applied to the shape control layer during formation of the shape control layer.
Abstract:
There is provided an inkjet print head having a stable filter structure. The inkjet print head includes a vibration substrate including a first filter formed therein; and a channel forming substrate including a second filter and a pressure chamber formed therein, the second filter being connected to the first filter.
Abstract:
A bulk acoustic wave (BAW) resonator includes: a substrate; a first BAW resonator including a first air cavity disposed in the substrate, and further including a first electrode, a first piezoelectric layer, and a second electrode stacked on the first air cavity; a second BAW resonator including a second air cavity disposed in the substrate, and further including a first electrode, a second piezoelectric layer, and a second electrode stacked on the second air cavity, wherein the second BAW resonator is connected in parallel to the first BAW resonator and has polarities that are opposite of polarities of the first BAW resonator; and a compensation capacitor circuit connected between the first BAW resonator and the second BAW resonator.