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公开(公告)号：US20240397831A1
公开(公告)日：2024-11-28
申请号：US18402434
申请日：2024-01-02
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kilho Lee , Junho Park , Byoungjae Bae
Abstract: A semiconductor device includes data storage patterns provided on a substrate and spaced apart from each other in first and second directions parallel to a top surface of the substrate, first cell conductive lines provided on the data storage patterns, extended in the first direction, and spaced apart from each other in the second direction, each of the first cell conductive lines being connected to corresponding ones of the data storage patterns, which are spaced apart from each other in the first direction, and cell via contacts spaced apart from each other in the first direction, between the first cell conductive lines. Each of the cell via contacts between the first cell conductive lines may be extended in the second direction and may be connected to dummy data storage patterns of the data storage patterns, which are spaced apart from each other in the second direction.
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公开(公告)号：US11683992B2
公开(公告)日：2023-06-20
申请号：US17134456
申请日：2020-12-27
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyungjong Jeong , Ki Woong Kim , Younghyun Kim , Junghwan Park , Byoungjae Bae , Se Chung Oh , Jungmin Lee , Kyungil Hong
CPC classification number: H01L43/02 , H01L27/222 , H01L43/12
Abstract: A magnetic memory device may include an interlayer insulating layer on a substrate, a bottom electrode contact disposed in the interlayer insulating layer, and a magnetic tunnel junction pattern on the bottom electrode contact. The bottom electrode contact may include a second region and a first region, which are sequentially disposed in a first direction perpendicular to a top surface of the substrate so that the second region is between the first region and the top surface of the substrate. A first width of the first region may be smaller than a second width of the second region, when measured in a second direction parallel to the top surface of the substrate.
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3.发明授权公开(公告)号：US10347819B2
公开(公告)日：2019-07-09
申请号：US15340330
申请日：2016-11-01
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jongchul Park , Byoungjae Bae , Inho Kim , Shin Kwon , Eunsun Noh , Insun Park , Sangmin Lee
Abstract: Methods of manufacturing a semiconductor device include forming a conductive layer on a substrate, forming an air gap or other cavity between the conductive layer and the substrate, and patterning the conductive layer to expose the air gap. The methods may further include forming conductive pillars between the substrate and the conductive layer. The air gap may be positioned between the conductive pillars.
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公开(公告)号：US20220254990A1
公开(公告)日：2022-08-11
申请号：US17488592
申请日：2021-09-29
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kyounghun Ryu , Shin Kwon , Byoungjae Bae , Hyunchul Shin , Gawon Lee
Abstract: A semiconductor device includes a substrate including a first region and a second region, data storage patterns on the first region and spaced apart from each other in a first direction, an upper insulating layer on the first and second regions and on the data storage patterns , a cell line structure penetrating the upper insulating layer on the first region, extending in the first direction, and electrically connected to the data storage patterns, and an upper connection structure penetrating the upper insulating layer on the second region. The upper connection structure includes an upper conductive line, and upper conductive contacts arranged along a bottom surface of the upper conductive line. The bottom surface of the upper conductive line is located at a height higher than a bottom surface of the cell line structure. A side surface of the cell line structure has a straight line shape continuously-extended.
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