公开(公告)号：US09300111B2

公开(公告)日：2016-03-29

申请号：US14154556

申请日：2014-01-14

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Jong Ho Lee ,  Chan Mook Lim ,  Young Chul Shin ,  Su Hyun Jo

IPC分类号： H01L33/00 ,  H01S5/02 ,  H01L33/38 ,  H01L33/44

CPC分类号： H01S5/02 ,  H01L33/0079 ,  H01L33/382 ,  H01L33/44

摘要： A semiconductor light emitting device includes a conductive substrate, a light emitting laminate including a second conductivity type semiconductor layer, an active layer, and a first conductivity type semiconductor layer stacked on the conductive substrate, a first electrode layer electrically connected to the first conductivity type semiconductor layer, a second electrode layer between the conductive substrate and the second conductivity type semiconductor layer, the second electrode layer being electrically connected to the second conductivity type semiconductor layer, and a passivation layer between the active layer and the second electrode layer, the passivation layer covering at least a lateral surface of the active layer of the light emitting laminate.

摘要翻译： 半导体发光器件包括导电衬底，层叠在导电衬底上的第二导电型半导体层，有源层和第一导电型半导体层的发光层叠体，与第一导电型电连接的第一电极层 半导体层，在导电基板和第二导电类型半导体层之间的第二电极层，第二电极层电连接到第二导电类型半导体层，以及在有源层和第二电极层之间的钝化层，钝化层 层覆盖发光层压板的有源层的至少一个侧表面。

公开(公告)号：US09123623B2

公开(公告)日：2015-09-01

申请号：US13933887

申请日：2013-07-02

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Su Hyun Jo ,  Jong Ho Lee ,  Jin Hyun Lee ,  Chan Mook Lim ,  Jin Hwan Kim

IPC分类号： H01L29/15 ,  H01L27/15 ,  H01L33/00 ,  H01L33/20

CPC分类号： H01L27/15 ,  H01L27/156 ,  H01L33/005 ,  H01L33/20 ,  H01L2933/0016

摘要： A method of manufacturing a semiconductor light emitting device having a multi-cell array, including: sequentially forming a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer on a substrate; etching and removing portions of the second conductive semiconductor layer and the active layer so as to expose portions of an upper surface of the first conductive semiconductor layer corresponding to respective regions of the second conductive semiconductor layer spaced apart from one another; and separating light emitting cells by partially etching the exposed portions of the first conductive semiconductor layer, wherein the separating of the light emitting cells is not performed at an edge portion of the substrate.

摘要翻译： 一种制造具有多单元阵列的半导体发光器件的方法，包括：在衬底上依次形成第一导电半导体层，有源层和第二导电半导体层; 蚀刻和去除所述第二导电半导体层和所述有源层的部分，以便暴露所述第一导电半导体层的与所述第二导电半导体层彼此间隔开的相应区域的上表面的部分; 以及通过部分蚀刻所述第一导电半导体层的暴露部分来分离发光单元，其中在所述基板的边缘部分处不发生所述发光单元的分离。

公开(公告)号：US08957431B2

公开(公告)日：2015-02-17

申请号：US13786542

申请日：2013-03-06

申请人： Samsung Electronics Co., Ltd.

发明人： Chan Mook Lim ,  Jong Ho Lee ,  Jin Hwan Kim ,  Young Chul Shin ,  Su Hyun Jo ,  Jin Hyun Lee

IPC分类号： H01L33/00 ,  H01L27/15 ,  H01L33/38

CPC分类号： H01L27/153 ,  H01L33/38

摘要： A semiconductor light emitting device (LED) includes a first light emitting cell having a first plurality of electrodes. A second light emitting cell includes a second plurality of electrodes. The first and second light emitting cells are disposed on the substrate and are physically separated from each other. A first interconnection unit electrically connects the first plurality of electrodes to the second plurality of the electrodes.

摘要翻译： 半导体发光器件（LED）包括具有第一多个电极的第一发光元件。 第二发光单元包括第二多个电极。 第一和第二发光单元被布置在基板上并且在物理上彼此分离。 第一互连单元将第一多个电极电连接到第二多个电极。

公开(公告)号：US09548422B2

公开(公告)日：2017-01-17

申请号：US14454612

申请日：2014-08-07

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Tae Hun Kim ,  Ki Seok Kim ,  Chan Mook Lim ,  Tae Kang Kim

IPC分类号： H01L33/40 ,  H01L33/38 ,  H01L33/14

CPC分类号： H01L33/40 ,  H01L33/145 ,  H01L33/38 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48237 ,  H01L2224/48465 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

摘要： A semiconductor light emitting device includes a light emitting structure and first and second electrodes. The light emitting structure includes first and second conductivity type semiconductor layers and an active layer interposed therebetween. The first and second electrodes are electrically connected to the first and second conductivity type semiconductor layers. The second electrode includes a current blocking layer, a reflective part disposed on the current blocking layer, a transparent electrode layer disposed on the second conductivity type semiconductor layer, a pad electrode part disposed within a region of the current blocking layer, and at least one finger electrode part disposed at least in part on the transparent electrode layer. The transparent electrode layer can be spaced apart from the reflective part, and have an opening surrounding the reflective part. In some examples, the transparent electrode layer can further be spaced apart from the current blocking layer.

摘要翻译： 半导体发光器件包括发光结构和第一和第二电极。 发光结构包括第一和第二导电类型的半导体层和介于它们之间的有源层。 第一和第二电极电连接到第一和第二导电类型半导体层。 第二电极包括电流阻挡层，设置在电流阻挡层上的反射部分，设置在第二导电类型半导体层上的透明电极层，设置在电流阻挡层的区域内的焊盘电极部分，以及至少一个 指状电极部分至少部分地设置在透明电极层上。 透明电极层可以与反射部分间隔开，并且具有围绕反射部分的开口。 在一些示例中，透明电极层可以进一步与电流阻挡层间隔开。

公开(公告)号：US20130234170A1

公开(公告)日：2013-09-12

申请号：US13786542

申请日：2013-03-06

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Chan Mook Lim ,  Jong Ho Lee ,  Jin Hwan Kim ,  Young Chul Shin ,  Su Hyun Jo ,  Jin Hyun Lee

IPC分类号： H01L27/15

CPC分类号： H01L27/153 ,  H01L33/38

摘要： A semiconductor light emitting device (LED) includes a first light emitting cell having a first plurality of electrodes. A second light emitting cell includes a second plurality of electrodes. The first and second light emitting cells are disposed on the substrate and are physically separated from each other. A first interconnection unit electrically connects the first plurality of electrodes to the second plurality of the electrodes.

摘要翻译： 半导体发光器件（LED）包括具有第一多个电极的第一发光单元。 第二发光单元包括第二多个电极。 第一和第二发光单元被布置在基板上并且在物理上彼此分离。 第一互连单元将第一多个电极电连接到第二多个电极。

公开(公告)号：US09548426B2

公开(公告)日：2017-01-17

申请号：US14720698

申请日：2015-05-22

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Myeong Ha Kim ,  Chan Mook Lim ,  Masaaki Sofue ,  Sang Yeob Song ,  Mi Jeong Yun

IPC分类号： H01L33/00 ,  H01L33/46 ,  H01L33/50

CPC分类号： H01L33/46 ,  H01L33/50 ,  H01L2224/1403 ,  H01L2224/16225 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012

摘要： A semiconductor light-emitting device includes a light-emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, and a selective transmission-reflection layer disposed on the light-emitting structure and including a plurality of dielectric layers having different optical thicknesses alternately stacked at least once. The sum of an optical thickness of a dielectric layer having a maximum optical thickness and an optical thickness of a dielectric layer having a minimum optical thickness is in the range of 0.75 to 0.80.

摘要翻译： 一种半导体发光器件包括包括第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构以及设置在发光结构上的选择性透射反射层，并且包括 具有交替层叠至少一次的具有不同光学厚度的多个电介质层。 具有最大光学厚度和具有最小光学厚度的介电层的光学厚度的介电层的光学厚度的总和在0.75至0.80的范围内。

公开(公告)号：US08981396B2

公开(公告)日：2015-03-17

申请号：US13770710

申请日：2013-02-19

申请人： Samsung Electronics Co., Ltd.

发明人： Jin Hyun Lee ,  Bum Joon Kim ,  Seung Wan Chae ,  Chan Mook Lim ,  Jong Ho Lee ,  Jin Hwan Kim ,  Su Hyun Jo

IPC分类号： H01L29/207 ,  H01L33/08 ,  H01L27/15 ,  H01L33/38 ,  H01L33/62 ,  F21V29/00 ,  F21V3/00 ,  F21K99/00 ,  F21V15/01 ,  F21Y101/02

CPC分类号： H01L33/08 ,  F21K9/23 ,  F21V3/00 ,  F21V29/507 ,  F21V29/74 ,  F21Y2115/10 ,  H01L27/156 ,  H01L33/38 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/00014

摘要： A semiconductor light emitting device includes a substrate, a semiconductor laminate having a base semiconductor layer, a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially formed on the substrate and divided by an isolation region to provide a plurality of light emitting cells, an intermediate separation layer interposed between the base semiconductor layer and the first conductivity-type semiconductor layer, a plurality of first and second electrodes connected to the first and second conductivity-type semiconductor layers, respectively, of the plurality of light emitting cells, and a wiring unit connecting the first and second electrodes of different light emitting cells.

摘要翻译： 半导体发光器件包括基板，具有基底半导体层，第一导电型半导体层，有源层和第二导电型半导体层的半导体层叠体，其顺序地形成在基板上并被隔离区域划分为 提供多个发光单元，插入在所述基底半导体层和所述第一导电型半导体层之间的中间分离层，分别连接到所述第一和第二导电类型半导体层的多个第一和第二电极 多个发光单元，以及连接不同发光单元的第一和第二电极的布线单元。

公开(公告)号：US09484500B2

公开(公告)日：2016-11-01

申请号：US14300642

申请日：2014-06-10

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Ki Seok Kim ,  Sang Seok Lee ,  Su Yeol Lee ,  Chan Mook Lim

IPC分类号： H01L33/00 ,  H01L31/12 ,  H01L33/42 ,  H01L33/40 ,  H01L33/46 ,  H01L33/38

CPC分类号： H01L33/42 ,  H01L33/38 ,  H01L33/405 ,  H01L33/46

摘要： A semiconductor light emitting device and method of manufacturing the semiconductor light emitting device are provided. The semiconductor light emitting device includes a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer. The device may also includes a first electrode connected to the first conductivity type semiconductor layer, and a second electrode connected to the second conductivity type semiconductor layer and having a pad region and a finger region extended from the pad region in one direction. The second electrode may include a transparent electrode part positioned on the second conductivity type semiconductor layer and including at least one opening therein, at least one reflective part spaced apart from the transparent electrode part within the opening and disposed in the pad region and the finger region, and a bonding part positioned on at least one portion of the reflective part and including a plurality of bonding finger parts spaced apart from each other in the finger region and a bonding pad part disposed in the pad region.

摘要翻译： 提供半导体发光器件和制造半导体发光器件的方法。 半导体发光器件包括包括第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构。 该器件还可以包括连接到第一导电类型半导体层的第一电极和连接到第二导电类型半导体层的第二电极，并且具有在一个方向上从焊盘区域延伸的焊盘区域和手指区域。 第二电极可以包括位于第二导电类型半导体层上并且包括其中的至少一个开口的透明电极部分，至少一个反射部分与开口内的透明电极部分间隔开并且设置在焊盘区域中，并且指状区域 以及位于所述反射部分的至少一部分上并且包括在所述手指区域中彼此间隔开的多个接合指状部分的接合部分和设置在所述焊盘区域中的接合焊盘部分。

公开(公告)号：US08912726B2

公开(公告)日：2014-12-16

申请号：US13789601

申请日：2013-03-07

申请人： Samsung Electronics Co., Ltd.

发明人： Jong Ho Lee ,  Sung Tae Kim ,  Chan Mook Lim ,  Jin Hwan Kim

IPC分类号： H05B37/02 ,  H05B33/08

CPC分类号： H05B33/083 ,  H05B33/0809 ,  H05B33/0821

摘要： Light emitting devices. A light emitting device including a power source; and a plurality of light emitting diode (LED) arrays coupled to the power source unit; and at least one delay unit. Each delay unit is coupled to a corresponding light emitting diode array of the light emitting diode arrays.

摘要翻译： 发光装置。 一种发光装置，包括电源; 以及耦合到所述电源单元的多个发光二极管（LED）阵列; 和至少一个延迟单元。 每个延迟单元耦合到发光二极管阵列的对应的发光二极管阵列。

公开(公告)号：US08901581B2

公开(公告)日：2014-12-02

申请号：US13895051

申请日：2013-05-15

申请人： Samsung Electronics Co., Ltd.

发明人： Chan Mook Lim ,  Jong Ho Lee ,  Jin Hwan Kim ,  Jin Hyun Lee ,  Su Hyun Jo ,  Hae Yeon Hwang

IPC分类号： H01L29/18 ,  H01L25/075 ,  H01L27/15 ,  H01L33/62

CPC分类号： H01L27/156 ,  H01L25/0753 ,  H01L33/62 ,  H01L2224/24 ,  H01L2224/48091 ,  H01L2924/00014

摘要： A semiconductor light emitting device includes a substrate and a plurality of light emitting cells disposed on the substrate. Each light emitting cell includes first and second conductive semiconductor layers having an active layer formed therebetween, and first and second electrodes formed on the first and second layers. A first insulation layer is formed on portions of the light emitting cell, while a second insulation layer entirely covers at least one light emitting cell. A method of manufacturing the semiconductor light emitting device, and a light emitting module and an illumination apparatus including the semiconductor light emitting device are also provided.

摘要翻译： 半导体发光器件包括衬底和设置在衬底上的多个发光单元。 每个发光单元包括其间形成有活性层的第一和第二导电半导体层，以及形成在第一和第二层上的第一和第二电极。 第一绝缘层形成在发光单元的部分上，而第二绝缘层完全覆盖至少一个发光单元。 还提供了制造半导体发光器件的方法，以及包括该半导体发光器件的发光模块和照明装置。