Semiconductor light emitting device having multi-cell array and method of manufacturing the same
    1.
    发明授权
    Semiconductor light emitting device having multi-cell array and method of manufacturing the same 有权
    具有多单元阵列的半导体发光器件及其制造方法

    公开(公告)号:US09123623B2

    公开(公告)日:2015-09-01

    申请号:US13933887

    申请日:2013-07-02

    摘要: A method of manufacturing a semiconductor light emitting device having a multi-cell array, including: sequentially forming a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer on a substrate; etching and removing portions of the second conductive semiconductor layer and the active layer so as to expose portions of an upper surface of the first conductive semiconductor layer corresponding to respective regions of the second conductive semiconductor layer spaced apart from one another; and separating light emitting cells by partially etching the exposed portions of the first conductive semiconductor layer, wherein the separating of the light emitting cells is not performed at an edge portion of the substrate.

    摘要翻译: 一种制造具有多单元阵列的半导体发光器件的方法,包括:在衬底上依次形成第一导电半导体层,有源层和第二导电半导体层; 蚀刻和去除所述第二导电半导体层和所述有源层的部分,以便暴露所述第一导电半导体层的与所述第二导电半导体层彼此间隔开的相应区域的上表面的部分; 以及通过部分蚀刻所述第一导电半导体层的暴露部分来分离发光单元,其中在所述基板的边缘部分处不发生所述发光单元的分离。

    Semiconductor light emitting device having multi-cell array
    2.
    发明授权
    Semiconductor light emitting device having multi-cell array 有权
    具有多单元阵列的半导体发光器件

    公开(公告)号:US08957431B2

    公开(公告)日:2015-02-17

    申请号:US13786542

    申请日:2013-03-06

    IPC分类号: H01L33/00 H01L27/15 H01L33/38

    CPC分类号: H01L27/153 H01L33/38

    摘要: A semiconductor light emitting device (LED) includes a first light emitting cell having a first plurality of electrodes. A second light emitting cell includes a second plurality of electrodes. The first and second light emitting cells are disposed on the substrate and are physically separated from each other. A first interconnection unit electrically connects the first plurality of electrodes to the second plurality of the electrodes.

    摘要翻译: 半导体发光器件(LED)包括具有第一多个电极的第一发光元件。 第二发光单元包括第二多个电极。 第一和第二发光单元被布置在基板上并且在物理上彼此分离。 第一互连单元将第一多个电极电连接到第二多个电极。

    Semiconductor light emitting device

    公开(公告)号:US10700246B2

    公开(公告)日:2020-06-30

    申请号:US16299422

    申请日:2019-03-12

    摘要: A semiconductor light emitting device includes a plurality of light emitting structures, an isolation layer covering side surfaces of the plurality of light emitting structures and insulating the plurality of light emitting structures from one another, a partition layer formed on the isolation layer, a first protective layer covering top surfaces of the plurality of light emitting structures and side walls of the partition layer, a reflective layer covering the first protective layer and disposed on the side walls of the partition layer, and a second protective layer covering the reflective layer.

    Method of manufacturing display module using LED

    公开(公告)号:US10573632B2

    公开(公告)日:2020-02-25

    申请号:US16185602

    申请日:2018-11-09

    摘要: A method of manufacturing a display module includes preparing a first substrate structure including an light-emitting diode (LED) array containing a plurality of LED cells, electrode pads connected to the first and second conductivity-type semiconductor layers, and a first bonding layer covering the LED array; preparing a second substrate structure including a plurality of thin-film transistor (TFT) cells disposed on a second substrate, and each having a source region, a drain region and a gate electrode disposed therebetween, the second substrate structure being provided by forming a circuit region, in which connection portions disposed to correspond to the electrode pads are exposed to one surface thereof, and by forming a second bonding layer covering the circuit region, respectively planarizing the first and second bonding layers, and bonding the first and second substrate structures to each other.

    Semiconductor light emitting device
    5.
    发明授权
    Semiconductor light emitting device 有权
    半导体发光器件

    公开(公告)号:US09300111B2

    公开(公告)日:2016-03-29

    申请号:US14154556

    申请日:2014-01-14

    摘要: A semiconductor light emitting device includes a conductive substrate, a light emitting laminate including a second conductivity type semiconductor layer, an active layer, and a first conductivity type semiconductor layer stacked on the conductive substrate, a first electrode layer electrically connected to the first conductivity type semiconductor layer, a second electrode layer between the conductive substrate and the second conductivity type semiconductor layer, the second electrode layer being electrically connected to the second conductivity type semiconductor layer, and a passivation layer between the active layer and the second electrode layer, the passivation layer covering at least a lateral surface of the active layer of the light emitting laminate.

    摘要翻译: 半导体发光器件包括导电衬底,层叠在导电衬底上的第二导电型半导体层,有源层和第一导电型半导体层的发光层叠体,与第一导电型电连接的第一电极层 半导体层,在导电基板和第二导电类型半导体层之间的第二电极层,第二电极层电连接到第二导电类型半导体层,以及在有源层和第二电极层之间的钝化层,钝化层 层覆盖发光层压板的有源层的至少一个侧表面。

    Semiconductor light emitting device

    公开(公告)号:US11075326B2

    公开(公告)日:2021-07-27

    申请号:US16913201

    申请日:2020-06-26

    摘要: A semiconductor light emitting device includes a plurality of light emitting structures, an isolation layer covering side surfaces of the plurality of light emitting structures and insulating the plurality of light emitting structures from one another, a partition layer formed on the isolation layer, a first protective layer covering top surfaces of the plurality of light emitting structures and side walls of the partition layer, a reflective layer covering the first protective layer and disposed on the side walls of the partition layer, and a second protective layer covering the reflective layer.

    Method of manufacturing display module using LED

    公开(公告)号:US10797040B2

    公开(公告)日:2020-10-06

    申请号:US16798027

    申请日:2020-02-21

    摘要: A method of manufacturing a display module includes preparing a first substrate structure including an light-emitting diode (LED) array containing a plurality of LED cells, electrode pads connected to the first and second conductivity-type semiconductor layers, and a first bonding layer covering the LED array; preparing a second substrate structure including a plurality of thin-film transistor (TFT) cells disposed on a second substrate, and each having a source region, a drain region and a gate electrode disposed therebetween, the second substrate structure being provided by forming a circuit region, in which connection portions disposed to correspond to the electrode pads are exposed to one surface thereof, and by forming a second bonding layer covering the circuit region, respectively planarizing the first and second bonding layers, and bonding the first and second substrate structures to each other.

    Semiconductor light emitting device

    公开(公告)号:US10211372B1

    公开(公告)日:2019-02-19

    申请号:US15939909

    申请日:2018-03-29

    摘要: A semiconductor light emitting device includes a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, sequentially stacked on a substrate along a first direction, and including an exposed region exposing the first conductivity-type semiconductor layer. A first contact electrode is in the exposed region, a second contact electrode is on the second conductivity-type semiconductor layer, and an insulating layer covers the light emitting structure. Separate electrode pads penetrate the insulating layer to be electrically connected to the first contact electrode and the second contact electrode. A side surface of at least one of the first and second electrode pads may extend to be coplanar with a side surface of the substrate along the first direction.