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    Nano scale resonator, nano scale sensor, and fabrication method thereof
    2.
    发明授权
    Nano scale resonator, nano scale sensor, and fabrication method thereof 有权
    纳米级谐振器，纳米级传感器及其制造方法

    公开(公告)号：US09360443B2

    公开(公告)日：2016-06-07

    申请号：US13668760

    申请日：2012-11-05

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Moon Chul Lee ,  Duck Hwan Kim ,  In Sang Song ,  Jea Shik Shin

    IPC: G01N27/04 ,  H03H9/24 ,  H03H3/007 ,  H03H9/02

    CPC classification number: G01N27/04 ,  B81B2201/02 ,  H03H3/0072 ,  H03H3/0077 ,  H03H9/2463 ,  H03H2009/02346 ,  H03H2009/0244

    Abstract: A nano scale resonator, a nano scale sensor, and a fabrication method thereof are provided. The nano scale resonator includes a resonance unit of nano scale configured to resonate based on an applied signal, and an anchor on a substrate, the anchor being configured to support the resonance unit, the anchor having an air gap within boundaries of the anchor, the resonance unit, and the substrate, the air gap being configured to reflect a vertical wave occurring in the resonance unit.

    Abstract translation: 提供了纳米级谐振器，纳米级传感器及其制造方法。 所述纳米级谐振器包括纳米级的谐振单元，其被配置为基于所施加的信号而谐振，并且所述锚固件被构造成支撑所述谐振单元，所述锚固件在所述锚的边界内具有气隙， 谐振单元和基板，气隙被配置为反映在谐振单元中发生的垂直波。

    Nano resonator and manufacturing method thereof
    8.
    发明授权
    Nano resonator and manufacturing method thereof 有权
    纳米谐振器及其制造方法

    公开(公告)号：US08901538B2

    公开(公告)日：2014-12-02

    申请号：US13846685

    申请日：2013-03-18

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jie Ai Yu ,  Duck Hwan Kim ,  In Sang Song ,  Jing Cui

    IPC: H01L31/0336 ,  H01L31/072 ,  H01L29/745 ,  H01L29/76 ,  H01L21/336 ,  B81C1/00 ,  B81B3/00 ,  H03H3/007 ,  H03H9/24

    CPC classification number: B81C1/00134 ,  B81B3/0018 ,  H03H3/0072 ,  H03H9/2463

    Abstract: A nano resonator includes a substrate, a first insulating layer disposed on the substrate, a first source disposed on the first insulating layer at a first position, a first drain disposed on the first insulating layer at a second position spaced apart from the first position so that the first drain faces the first source, a first nano-wire channel having a first end connected to the first source and a second end connected to the first drain, and having a doping type and a doping concentration that are identical to a doping type and a doping concentration of the first source and the first drain, and a second nano-wire channel disposed at a predetermined distance from the first nano-wire channel in a direction perpendicular to the substrate or a direction parallel to the substrate.

    Abstract translation: 纳米谐振器包括衬底，设置在衬底上的第一绝缘层，在第一位置处设置在第一绝缘层上的第一源极，在与第一位置间隔开的第二位置处设置在第一绝缘层上的第一漏极， 第一漏极面向第一源极，第一纳米线通道具有连接到第一源极的第一端和连接到第一漏极的第二端，并且具有与掺杂类型相同的掺杂类型和掺杂浓度 以及第一源极和第一漏极的掺杂浓度以及与第一纳米线通道在垂直于衬底的方向或平行于衬底的方向设置在预定距离处的第二纳米线通道。

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