摘要:
An electronic device is provided. The electronic device includes a first communication module configured to support a first communication method, a second communication module configured to support a second communication method, a memory configured to store data used for operations of the first communication module and the second communication module, and a processor electrically connected to the first communication module, the second communication module, and the memory.
摘要:
A method and portable terminal for controlling an operation of a touch panel are provided. The portable terminal includes a memory for storing at least one program for supporting a user function operated based on a certain frequency upon activation of the user function, a touch panel, activated when the user function is supported, for supporting a touch function, and a controller for selecting frequency information that does not interfere with the certain frequency for operating the corresponding user function when the at least one user function is activated, and for setting the selected frequency information as a scanning frequency of the touch panel.
摘要:
The present disclosure relates to an X-ray imaging apparatus. The X-ray imaging apparatus includes a first column connected to a main body, a second column connected to the first column and provided to be movable relative to the first column, an arm connected to the second column and slidably provided along the second column, and a weight compensator provided to compensate for the weight of the second column and the arm, wherein the weight compensator, the second column and the arm are connected by a wire, and the second column is provided with an elastic member connected to the arm and providing an elastic force such that the arm is moved by a uniform force regardless of the position of the second column.
摘要:
There is provided a non-volatile memory device which can enhance the reliability of a memory device by using an ovonic threshold switch (OTS) selection element including a multilayer structure. The non-volatile memory device includes a first electrode and a second electrode spaced apart from each other, a selection element layer between the first electrode and the second electrode, which is closer to the second electrode rather than to the first electrode, and which includes a first chalcogenide layer, a second chalcogenide layer, and a material layer disposed between the first and second chalcogenide layers. The first chalcogenide layer including a first chalcogenide material, and the second chalcogenide layer including a second chalcogenide material. A memory layer between the first electrode and the selection element layer includes a third chalcogenide material which is different from the first and second chalcogenide materials.
摘要:
A wet etching apparatus includes a process bath having an internal space configured to receive an etchant and having a support unit, on which a wafer is disposed to be in contact with the etchant. A laser unit is disposed above the process bath and is configured to direct a laser beam to the wafer and to heat the wafer thereby. An etchant supply unit is configured to supply the etchant to the internal space of the process bath.
摘要:
A memory device includes a word line, a bit line intersecting the word line, and a memory cell at an intersection of the word line and the bit line. The memory cell includes a first electrode connected to the word line; a second electrode connected to the bit line; and a selective element layer between the first electrode and the second electrode. The selective element layer includes one of Ge—Se—Te, Ge—Se—Te—As, and Ge—Se—Te—As—Si, and a composition ratio of arsenic (As) component of each of the Ge—Se—Te—As and the Ge—Se—Te—As—Si being greater than 0.01 and less than 0.17.
摘要:
A method for controlling a semiconductor manufacturing facility includes measuring output change amounts of differential pressure sensors in the facility when pressure conditions change by a number of fans. The fans are then classified into different groups and subgroups and control sequences of the subgroups are determined based on the change amounts. Difference values are then calculated, and a control signal is generated to adjust the rotation speed of the fans.