公开(公告)号：US11778807B2

公开(公告)日：2023-10-03

申请号：US17371452

申请日：2021-07-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jungwoo Song ,  Kwangmin Kim ,  Jun Ho Lee ,  Hyuckjin Kang ,  Yong Kwan Kim ,  Sangyeon Han ,  Seguen Park

IPC: H01L29/06 ,  H10B12/00 ,  H01L23/532 ,  H10B61/00 ,  H10B63/00 ,  H10N59/00

CPC classification number: H10B12/30 ,  H01L23/5329 ,  H01L29/0649 ,  H10B12/315 ,  H10B12/482 ,  H10B12/485 ,  H10B61/00 ,  H10B63/00 ,  H10N59/00

Abstract: Provided are a semiconductor memory device and a method of fabricating the same. The semiconductor memory device may include: a first impurity doped region and a second impurity doped region spaced apart from each other in a semiconductor substrate, a bit line electrically connected to the first impurity doped region and crossing over the semiconductor substrate, a storage node contact electrically connected to the second impurity doped region, a first spacer and a second spacer disposed between the bit line and the storage node contact, and an air gap region disposed between the first spacer and the second spacer. The first spacer may cover a sidewall of the bit line, and the second spacer may be adjacent to the storage node contact. A top end of the first spacer may have a height higher than a height of a top end of the second spacer.

公开(公告)号：US20220172926A1

公开(公告)日：2022-06-02

申请号：US17443535

申请日：2021-07-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong Wan Kim ,  Beom Rae Kim ,  Dong Hyeon Na ,  Young Jin Noh ,  Seung Bo Shim ,  Sang-Ho Lee ,  Yong Woo Lee ,  Jun Ho Lee ,  Dong Hee Han

IPC: H01J37/32

Abstract: A method for fabricating a semiconductor device includes providing a wafer on a lower electrode inside a plasma processing apparatus. A first power having a first and second frequency is provided to the lower electrode. A second power is provided to an RF induction electrode through the lower electrode. A third power having the second frequency is released outside of a chamber. A plasma process is performed on the wafer while the third power is released. The RF induction electrode is disposed inside an insulating plate surrounding a sidewall of the lower electrode. The RF induction electrode is spaced apart front the lower electrode. The RF induction electrode has an annular shape surrounding the sidewall of the lower electrode. The first power is controlled by a first controller, and the third power is controlled by a second controller different from the first controller.

公开(公告)号：US10332842B2

公开(公告)日：2019-06-25

申请号：US16026937

申请日：2018-07-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kiseok Lee ,  Sooho Shin ,  Juik Lee ,  Jun Ho Lee ,  Kwangmin Kim ,  Ilyoung Moon ,  Jemin Park ,  Bumseok Seo ,  Chan-Sic Yoon ,  Hoin Lee

IPC: H01L23/544 ,  H01L27/108

Abstract: A semiconductor device includes an alignment key on a substrate. The alignment key includes a first sub-alignment key pattern with a first conductive pattern, a second conductive pattern, and a capping dielectric pattern that are sequentially stacked on the substrate, an alignment key trench that penetrates at least a portion of the first sub-alignment key pattern, and a lower conductive pattern in the alignment key trench. The alignment key trench includes an upper trench that is provided in the capping dielectric pattern that has a first width, and a lower trench that extends downward from the upper trench and that has a second width less than the first width. The lower conductive pattern includes sidewall conductive patterns that are separately disposed on opposite sidewalls of the lower trench.

公开(公告)号：US09887332B2

公开(公告)日：2018-02-06

申请号：US15056117

申请日：2016-02-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Pun Jae Choi ,  Geun Woo Ko ,  Yong Min Kwon ,  Ah Young Woo ,  Jun Ho Lee ,  Jin Wook Chung

IPC: H01L33/62 ,  H01L25/16 ,  H01L25/075 ,  H01L33/48 ,  H01L33/56 ,  H01L33/60

CPC classification number: H01L33/62 ,  H01L25/0753 ,  H01L25/167 ,  H01L33/486 ,  H01L33/56 ,  H01L33/60

Abstract: A semiconductor light-emitting device package includes: a light-emitting structure having a first surface, a second surface opposite to the first surface and side surfaces disposed between the first and the second surfaces, the light-emitting structure comprising a first light-emitting laminate and a second light-emitting laminate, each of the first and the second light emitting laminates including: a first conductivity-type semiconductor layer; an active layer, and a second conductivity-type semiconductor layer, an interconnector provided on the second surface of the light-emitting structure and configured to electrically connect the first and the second light-emitting laminates; a metal guide surrounding the side surfaces of the light-emitting structure; and an encapsulant surrounding the metal guide and the second and the side surfaces of the light-emitting structure and exposing the first surface of the light-emitting structure.

公开(公告)号：US11484246B2

公开(公告)日：2022-11-01

申请号：US16426697

申请日：2019-05-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jun Ho Lee ,  Sang Kyu Kim

IPC: A61B5/00 ,  G01J3/433 ,  G01J3/02 ,  A61B5/1455 ,  G01J3/42 ,  A61B5/1491

Abstract: Provided is a spectrum processing apparatus for removing noise, caused by a change in temperature, from a spectrum. The spectrum processing apparatus includes: a temperature modulator configured to perform modulation of a temperature of an object; a spectrometer configured to obtain a first spectrum based on the temperature of the object that is changed by the modulation; and a spectrum processor configured to extract a temperature change vector based on the first spectrum, and to correct a second spectrum based on the extracted temperature change vector.

公开(公告)号：US20220104776A1

公开(公告)日：2022-04-07

申请号：US17224318

申请日：2021-04-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ka Ram CHOI ,  So Young Lee ,  Jun Ho Lee ,  Sang Kyu Kim

IPC: A61B5/00 ,  A61B5/1455 ,  A61B5/145 ,  A61B5/01

Abstract: A method of optimizing a bio-information estimation model by reflecting temperature variation characteristics for each wavelength is disclosed. According to an embodiment of the present disclosure, the method of optimizing a bio-information estimation model includes: obtaining a plurality of spectra according to a temperature variation; obtaining a rate of change in absorbance at each wavelength of the plurality of spectra according to the temperature variation by subtracting a reference spectrum from the plurality of spectra; generating a characteristic matrix for each wavelength based on the rate of change in absorbance at each wavelength according to the temperature variation; obtaining a temperature signal spectrum based on the characteristic matrix for each wavelength; and optimizing a bio-information estimation model based on the temperature signal spectrum.

公开(公告)号：US11114440B2

公开(公告)日：2021-09-07

申请号：US16805066

申请日：2020-02-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jungwoo Song ,  Kwangmin Kim ,  Jun Ho Lee ,  Hyuckjin Kang ,  Yong Kwan Kim ,  Sangyeon Han ,  Seguen Park

IPC: H01L21/768 ,  H01L27/108 ,  H01L29/06 ,  H01L23/532 ,  H01L27/24 ,  H01L27/22

Abstract: Provided are a semiconductor memory device and a method of fabricating the same. The semiconductor memory device may include: a first impurity doped region and a second impurity doped region spaced apart from each other in a semiconductor substrate, a bit line electrically connected to the first impurity doped region and crossing over the semiconductor substrate, a storage node contact electrically connected to the second impurity doped region, a first spacer and a second spacer disposed between the bit line and the storage node contact, and an air gap region disposed between the first spacer and the second spacer. The first spacer may cover a sidewall of the bit line, and the second spacer may be adjacent to the storage node contact. A top end of the first spacer may have a height higher than a height of a top end of the second spacer.

公开(公告)号：US10702122B2

公开(公告)日：2020-07-07

申请号：US15108676

申请日：2014-12-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chang Wook Lee ,  Sang Soo Choi ,  Seung Gee Hong ,  Jun Ho Lee

IPC: A47L15/42 ,  A47L15/00 ,  A47L15/16 ,  A47L15/18

Abstract: Disclosed is a dishwasher comprising: a tub for containing dishes; a nozzle assembly for ejecting washing water; a vane assembly for changing the path of the washing water, while moving from a first position to a second position inside the tub, such that the ejected washing water is directed towards the dishes; and a controller for stopping the vane assembly, changing the movement speed of the vane assembly, or changing the movement direction of the vane assembly while the vane assembly moves from the first position to the second position, wherein the washing water can also be ejected to corner portions of the tub.

公开(公告)号：US10244918B2

公开(公告)日：2019-04-02

申请号：US15976996

申请日：2018-05-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung Chan Ryu ,  Woo Jin Shin ,  Soo Hyung Yoo ,  So Jeong Kim ,  Jun Ho Lee ,  Jae Man Joo ,  Sang Soo Choi

IPC: A47L15/42 ,  A47L15/16 ,  A47L15/00

Abstract: Provided are a dish washing machine capable of effectively removing garbage which remains at the bottom of a washing tub and a filter and a method of controlling the same. When washing water is sprayed from a nozzle while a vane is positioned at a reference position during a drainage operation, since a deflection angle of the vane is bent back and the washing water is strongly sprayed toward a rear wall of a washing tub, the washing water may form a fast and strong water current over a bottom plate of the washing tub, and the fast and strong water current may remove garbage which remains at a filter while flowing over the bottom of the washing tub. Also, even when an excessive amount of garbage is accumulated at a filter at a top end of a sump and blocks the filter during a washing operation such as preliminary washing, main washing, etc., the filter is automatically washed using a small amount of water, thereby eliminating inconvenience of a user to directly separate and wash the filter. Also, washing performance may be effectively improved by precisely determining whether degradation in washing performance caused by a poor circulation of washing water occurs due to a filter blockage or generation of bubbles.

公开(公告)号：US09925568B2

公开(公告)日：2018-03-27

申请号：US15293448

申请日：2016-10-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung Yeon Lee ,  Jun Ho Lee ,  Kyungsang Cho ,  Young Suk Jung

IPC: H01L33/06 ,  B08B3/08 ,  B05D1/02 ,  C01B19/00 ,  B22F1/00 ,  B08B3/10 ,  C09K11/02 ,  C09K11/56 ,  C09K11/88 ,  B82Y20/00

CPC classification number: B08B3/08 ,  B05D1/02 ,  B08B3/10 ,  B22F1/0018 ,  B22F1/0085 ,  B22F1/0088 ,  B82Y20/00 ,  C01B19/002 ,  C01B19/007 ,  C01P2002/82 ,  C01P2002/89 ,  C01P2004/04 ,  C01P2004/64 ,  C01P2006/40 ,  C09K11/025 ,  C09K11/565 ,  C09K11/883 ,  H01L33/06 ,  Y10S977/774 ,  Y10S977/95 ,  Y10T428/256

Abstract: A method for removing an organic ligand from a surface of a particle including: obtaining a particle having an organic ligand disposed on a surface thereof; contacting the particle with an alkylammonium salt represented by Chemical Formula 1: NR′4+A−  Chemical Formula 1 wherein groups R′ are the same or different and are each independently hydrogen or a C1 to C20 alkyl group, provided that at least one group R′ is an alkyl group, and A is a hydroxide anion, a halide anion, a borohydride anion, a nitrate anion, a phosphate anion, or a sulfate anion; and heat-treating the particle to carry out a reaction between the alkylammonium salt and the organic ligand.