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1.发明公开公开(公告)号：US20230141852A1
公开(公告)日：2023-05-11
申请号：US17866966
申请日：2022-07-18
发明人： Sanggil Lee , Jungtaek Kim , Dohyun Go , Pankwi Park , Dongsuk Shin , Namkyu Cho , Ryong Ha , Yang Xu
IPC分类号： H01L29/78 , H01L29/08 , H01L21/8238 , H01L27/092
CPC分类号： H01L29/7848 , H01L29/0847 , H01L21/823814 , H01L27/0922
摘要： A semiconductor device includes a semiconductor active region having a vertical stack of multiple spaced-apart semiconductor channel regions thereon. A gate electrode extends on the active region and between the spaced-apart channel regions. A source/drain region contacts the spaced-apart channel regions. The source/drain region includes a stack of at least first, second and third epitaxial layers having different electrical characteristics. The first epitaxial layer contacts the active region and each of the spaced-apart channel regions. The second epitaxial layer contacts a first portion of an upper surface of the first epitaxial layer. The third epitaxial layer contacts a second portion of the upper surface of the first epitaxial layer. Each of the first, second and third epitaxial layers includes silicon germanium (SiGe) with unequal levels of germanium (Ge) therein. A level of germanium in the third epitaxial layer exceeds a level of germanium in the second epitaxial layer, which exceeds a level of germanium in the first epitaxial layer.
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公开(公告)号：US11569350B2
公开(公告)日：2023-01-31
申请号：US17371858
申请日：2021-07-09
发明人： Sanggil Lee , Namkyu Cho , Seokhoon Kim , Kang Hun Moon , Hyun-Kwan Yu , Sihyung Lee
IPC分类号： H01L29/08 , H01L29/06 , H01L29/78 , H01L29/66 , H01L21/762
摘要： Disclosed is a semiconductor device including a first active pattern that extends in a first direction on an active region of a substrate, a first source/drain pattern in a recess on an upper portion of the first active pattern, a gate electrode that runs across a first channel pattern on the upper portion of the first active pattern and extends in a second direction intersecting the first direction, and an active contact electrically connected to the first source/drain pattern.
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公开(公告)号：US11480175B2
公开(公告)日：2022-10-25
申请号：US16861673
申请日：2020-04-29
发明人： Junghoon Park , Sunghea Cho , Jongcheun Seo , Namkyu Cho , Dohyun Kim , Junguk Jun
摘要： A scroll compressor includes a main body, a cover to divide the main body into a low pressure section and a high pressure section, a fixed scroll including a first discharge port, an orbiting scroll to rotate with respect to the fixed scroll and to form a compression chamber together with the fixed scroll, a discharge guide disposed between the fixed scroll and the cover and including a second discharge port connected to the first discharge port, and a back pressure actuator configured to form a back pressure chamber together with the discharge guide and to move in a direction toward the cover with respect to the discharge guide to selectively connect the second discharge port with the high pressure section. The fixed scroll includes a bypass flow path connecting the compression chamber and the second discharge port and a bypass valve to open or close the bypass flow path.
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公开(公告)号：US20230378336A1
公开(公告)日：2023-11-23
申请号：US18117405
申请日：2023-03-04
发明人： Namkyu Cho , Jungtaek Kim , Moonseung Yang , Sumin Yu , Seojin Jeong , Seokhoon Kim , Pankwi Park
IPC分类号： H01L29/775 , H01L29/423 , H01L29/06 , H01L29/417
CPC分类号： H01L29/775 , H01L29/42392 , H01L29/0673 , H01L29/0649 , H01L29/41775
摘要： A semiconductor device includes an active region extending on a substrate in a first direction, a plurality of channel layers on the active region to be spaced apart from each other in a vertical direction, perpendicular to an upper surface of the substrate, the plurality of channel layers including silicon germanium, a gate structure intersecting the active region and the plurality of channel layers on the substrate to surround the plurality of channel layers, respectively, a source/drain region on the active region on at least one side of the gate structure, the source/drain region in contact with the plurality of channel layers, and a substrate insulating layer disposed between the source/drain region and the substrate. The source/drain region includes a first layer in contact with a side surface of the gate structure, side surfaces of the plurality of channel layers, and an upper surface of the substrate insulating layer.
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公开(公告)号：US11670638B2
公开(公告)日：2023-06-06
申请号：US17348962
申请日：2021-06-16
发明人： Yang Xu , Hyunkwan Yu , Namkyu Cho , Dongmyoung Kim , Kanghun Moon , Sanggil Lee , Sihyung Lee
IPC分类号： H01L27/092 , H01L29/78
CPC分类号： H01L27/0924 , H01L29/7851
摘要： A semiconductor device includes a plurality of active fins extending in a first direction, and spaced apart from each other in a second direction, the plurality of active fins having upper surfaces of different respective heights, a gate structure extending in the second across the plurality of active fins, a device isolation film on the substrate, a source/drain region on the plurality of active fins, and including an epitaxial layer on the plurality of active fins, an insulating spacer on an upper surface of the device isolation film and having a lateral asymmetry with respect to a center line of the source/drain region in a cross section taken along the second direction, an interlayer insulating region on the device isolation film and on the gate structure and the source/drain region, and a contact structure in the interlayer insulating region and electrically connected to the source/drain region.
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公开(公告)号：US20240079466A1
公开(公告)日：2024-03-07
申请号：US18136975
申请日：2023-04-20
发明人： Sangwon Baek , Beomjin Park , Myung Gil Kang , Dongwon Kim , Hyumin Yoo , Namkyu Cho
IPC分类号： H01L29/423 , H01L21/8238 , H01L27/092 , H01L29/66 , H01L29/775
CPC分类号： H01L29/42392 , H01L21/823814 , H01L27/092 , H01L29/66439 , H01L29/66742 , H01L29/775 , H01L2029/42388
摘要： A semiconductor device includes a substrate including an active pattern, a channel pattern on the active pattern, the channel pattern including a plurality of semiconductor patterns spaced apart from each other, a source/drain pattern connected to the plurality of semiconductor patterns, a gate electrode including, an inner electrode between a first semiconductor pattern of the plurality of semiconductor patterns and a second semiconductor pattern of the plurality of semiconductor patterns, the first semiconductor pattern and the second semiconductor pattern being adjacent to each other, and an outer electrode on an uppermost semiconductor pattern of the plurality of semiconductor patterns.
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公开(公告)号：US20230395662A1
公开(公告)日：2023-12-07
申请号：US18299086
申请日：2023-04-12
发明人： Seojin Jeong , Jungtaek Kim , Moonseung Yang , Sumin Yu , Namkyu Cho , Seokhoon Kim , Pankwi Park
IPC分类号： H01L29/08 , H01L29/775 , H01L29/423 , H01L29/06
CPC分类号： H01L29/0847 , H01L29/775 , H01L29/42392 , H01L29/0673
摘要： Semiconductor device may include an active region extending in a first direction, channel layers spaced apart from each other in a vertical direction, a gate structure extending on the active region and the channel layers to surround the channel layers and extending in a second direction, and a source/drain region on the active region adjacent to a side of the gate structure and contacting the plurality of channel layers. The source/drain region includes first to sixth epitaxial layers that are sequentially stacked in the vertical direction and have respective first to sixth germanium (Ge) concentrations. The first Ge concentration is lower than the second Ge concentration, the third Ge concentration is lower than the second Ge concentration and the fourth Ge concentration, and the fifth Ge concentration is lower than the fourth Ge concentration and the sixth Ge concentration.
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公开(公告)号：US11326599B2
公开(公告)日：2022-05-10
申请号：US16689350
申请日：2019-11-20
发明人： Sunghea Cho , Eunsuk Kim , Junghoon Park , Jongcheun Seo , Namkyu Cho
摘要： A compressor including a compression unit comprising an inlet for sucking gas and configured to compress the sucked gas; and a casing configured to accommodate the compression unit; and a suction guide comprising a passage for guiding the gas from an outside of the casing to the inlet. The compression unit includes a first surface extending from an edge of the inlet, the suction guide includes a second surface extending from an edge of a vent of the passage, and provided in an internal area of the casing to make the first surface and the second surface face each other, and an external end of the first surface and an internal end of the second surface or an internal end of the first surface and an external end of the second surface do not overlap along a direction of an axis of the compressor.
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公开(公告)号：US11069776B2
公开(公告)日：2021-07-20
申请号：US16789498
申请日：2020-02-13
发明人： Sanggil Lee , Namkyu Cho , Seokhoon Kim , Kang Hun Moon , Hyun-Kwan Yu , Sihyung Lee
IPC分类号： H01L29/08 , H01L29/06 , H01L29/78 , H01L29/66 , H01L21/762
摘要： Disclosed is a semiconductor device including a first active pattern that extends in a first direction on an active region of a substrate, a first source/drain pattern in a recess on an upper portion of the first active pattern, a gate electrode that runs across a first channel pattern on the upper portion of the first active pattern and extends in a second direction intersecting the first direction, and an active contact electrically connected to the first source/drain pattern.
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公开(公告)号：US12062662B2
公开(公告)日：2024-08-13
申请号：US18142210
申请日：2023-05-02
发明人： Yang Xu , Hyunkwan Yu , Namkyu Cho , Dongmyoung Kim , Kanghun Moon , Sanggil Lee , Sihyung Lee
IPC分类号： H01L27/092 , H01L29/78
CPC分类号： H01L27/0924 , H01L29/7851
摘要： A semiconductor device includes a plurality of active fins extending in a first direction, and spaced apart from each other in a second direction, the plurality of active fins having upper surfaces of different respective heights, a gate structure extending in the second across the plurality of active fins, a device isolation film on the substrate, a source/drain region on the plurality of active fins, and including an epitaxial layer on the plurality of active fins, an insulating spacer on an upper surface of the device isolation film and having a lateral asymmetry with respect to a center line of the source/drain region in a cross section taken along the second direction, an interlayer insulating region on the device isolation film and on the gate structure and the source/drain region, and a contact structure in the interlayer insulating region and electrically connected to the source/drain region.
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