公开(公告)号：US09875038B2

公开(公告)日：2018-01-23

申请号：US15083524

申请日：2016-03-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dae-Hoon Jang ,  Bomi Kim ,  Songho Yoon

IPC: G06F3/06 ,  G06F12/02

CPC classification number: G06F3/0613 ,  G06F3/0659 ,  G06F3/0685 ,  G06F12/0246 ,  G06F2212/1024 ,  G06F2212/2022 ,  G06F2212/60 ,  G06F2212/7201 ,  G06F2212/7203 ,  G06F2212/7207

Abstract: A storage device including a nonvolatile memory device is provided. The storage device may include: a nonvolatile memory device; and a controller configured to control a read operation of the nonvolatile memory device according to a read request from an external host device. The controller is configured to read map data including a segment, and to store different types of map data in an internal random access memory (RAM) based on determining whether the segment corresponds to sequential data.

公开(公告)号：US11249911B2

公开(公告)日：2022-02-15

申请号：US16900021

申请日：2020-06-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong-Woo Kim ,  Dongin Kim ,  Songho Yoon ,  Youngjoon Jang ,  Wookhan Jeong

IPC: G06F12/0873 ,  G06F12/02 ,  G06F12/0882 ,  G06F13/16 ,  G06F9/48 ,  G06F12/14

Abstract: A memory system includes a storage device including a nonvolatile memory device and a storage controller configured to control the nonvolatile memory device, and a host that accesses the storage device. The storage device transfers map data, in which a physical address of the nonvolatile memory device and a logical address provided from the host are mapped, to the host depending on a request of the host. The host stores and manages the transferred map data as map cache data. The map cache data are managed depending on a priority that is determined based on a corresponding area of the nonvolatile memory device.

公开(公告)号：US11645007B2

公开(公告)日：2023-05-09

申请号：US16903700

申请日：2020-06-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Songho Yoon ,  Dong-Min Kim ,  Youngmoon Kim ,  Jeong-Woo Park ,  Kyoung Back Lee

IPC: G06F3/06

CPC classification number: G06F3/0659 ,  G06F3/0611 ,  G06F3/0656 ,  G06F3/0679 ,  G06F2212/7203

Abstract: A storage device includes a nonvolatile memory device that includes a first region including memory cells configured to store n-bit data and a second region including memory cells configured to store m-bit data and a memory controller, where n and m are natural numbers and n is less than m. The first region includes a first area and a second area, and the second region includes a third area. The memory controller is configured to perform one of a turbo write operation on the first area or the second area and a normal write operation on the third area, and configured to perform one of a turbo read operation on the first area or the second area and a normal read operation on the third area.

公开(公告)号：US10229051B2

公开(公告)日：2019-03-12

申请号：US15392353

申请日：2016-12-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： JooYoung Hwang ,  Dong-Min Kim ,  Younwon Park ,  Songho Yoon

IPC: G06F12/1027 ,  G06F12/02

Abstract: An operating method of a storage device that includes a nonvolatile memory device and a controller configured to control the nonvolatile memory device includes sending map data from the storage device to a host device, the map data mapping one or more of a plurality of physical addresses of the nonvolatile memory device to one or more of a plurality of logical addresses of the host device; receiving, at the storage device, a read request from the host device; if the read request includes a physical address, reading data from the nonvolatile memory device based on the included physical address; and if the read request does not include a physical address, translating a logical address of the read request into a first physical address, and reading data from the nonvolatile memory device based on the translated first physical address.

公开(公告)号：US09424933B2

公开(公告)日：2016-08-23

申请号：US14569174

申请日：2014-12-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： In-Hwan Choi ,  Songho Yoon

IPC: G11C16/22 ,  G06F12/02 ,  G06F12/14 ,  G11C16/10 ,  G11C11/56 ,  G11C16/26 ,  G11C16/34 ,  G11C16/20 ,  G11C7/24 ,  G06F3/06

CPC classification number: G11C16/10 ,  G06F3/064 ,  G06F3/0647 ,  G06F12/02 ,  G06F12/0238 ,  G11C7/24 ,  G11C11/5628 ,  G11C11/5671 ,  G11C16/20 ,  G11C16/22 ,  G11C16/26 ,  G11C16/3459 ,  G11C2211/5641

Abstract: An operating method of a nonvolatile memory system including first and second areas is provided. Data stored in the first area is migrated to the second area when a first booting operation is performed. The data stored in the second area is reprogrammed. The first booting operation is a booting operation performed when the nonvolatile memory system is first powered on after mounted on a printed circuit board. The reprogramming is a program operation performed on the data stored in the second area without performing an erasing operation on the data stored in the second area.

Abstract translation: 提供了包括第一和第二区域的非易失性存储器系统的操作方法。 当执行第一启动操作时，存储在第一区域中的数据被迁移到第二区域。 存储在第二区域中的数据被重新编程。 第一启动操作是当非易失性存储器系统在安装在印刷电路板上之后首次通电时执行的引导操作。 重新编程是对存储在第二区域中的数据执行的程序操作，而不对存储在第二区域中的数据执行擦除操作。

公开(公告)号：US12229438B2

公开(公告)日：2025-02-18

申请号：US18149560

申请日：2023-01-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong-Woo Kim ,  Songho Yoon ,  Jeong-Woo Park ,  Dong-Min Kim ,  Kyoung Back Lee

IPC: G06F3/06

Abstract: A memory system includes a storage device including a turbo write buffer and a user storage area implemented with a nonvolatile memory, and a host configured to transfer a read request to the storage device. In response to the read request, the storage device transfers read data and read data information including attributes of the read data to the host.

公开(公告)号：US11573732B2

公开(公告)日：2023-02-07

申请号：US16901332

申请日：2020-06-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong-Woo Kim ,  Songho Yoon ,  Jeong-Woo Park ,  Dong-Min Kim ,  Kyoung Back Lee

IPC: G06F3/06

Abstract: A memory system includes a storage device including a turbo write buffer and a user storage area implemented with a nonvolatile memory, and a host configured to transfer a read request to the storage device. In response to the read request, the storage device transfers read data and read data information including attributes of the read data to the host.

公开(公告)号：US10996883B2

公开(公告)日：2021-05-04

申请号：US15984446

申请日：2018-05-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong-Min Kim ,  Songho Yoon

IPC: G06F3/06 ,  G06F12/10

Abstract: A storage system includes a host device and a storage device. The host device generates a write command, a logical address of write data corresponding to the write command, and a selective purge tag indicating that the write data are targeted for selective purge. The storage device receives the write command, the logical address, and the selective purge tag, stores write data, and logically erases the stored write data upon receiving an erase command from the host device. In addition, the storage device physically erases the stored write data upon receiving a selective purge request from the host device.

公开(公告)号：US20170192902A1

公开(公告)日：2017-07-06

申请号：US15392353

申请日：2016-12-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： JooYoung HWANG ,  Dong-Min Kim ,  Younwon Park ,  Songho Yoon

IPC: G06F12/10

CPC classification number: G06F12/0246 ,  G06F12/1027 ,  G06F2212/7201 ,  G06F2212/7202

Abstract: An operating method of a storage device that includes a nonvolatile memory device and a controller configured to control the nonvolatile memory device includes sending map data from the storage device to a host device, the map data mapping one or more of a plurality of physical addresses of the nonvolatile memory device to one or more of a plurality of logical addresses of the host device; receiving, at the storage device, a read request from the host device; if the read request includes a physical address, reading data from the nonvolatile memory device based on the included physical address; and if the read request does not include a physical address, translating a logical address of the read request into a first physical address, and reading data from the nonvolatile memory device based on the translated first physical address.