Three-dimensional semiconductor memory devices

    公开(公告)号:US11302709B2

    公开(公告)日:2022-04-12

    申请号:US16732518

    申请日:2020-01-02

    Abstract: Disclosed are three-dimensional semiconductor memory devices including an electrode structure including gate electrodes stacked in a first direction, a lower pattern group including lower vertical patterns that are in a lower portion of the electrode structure and are connected to the substrate, and an upper pattern group including upper vertical patterns that are in an upper portion of the electrode structure. The upper vertical patterns may be connected to the lower vertical patterns, respectively. The devices may also include two common source plugs spaced apart from each other in a second direction. The electrode structure may be between the two common source plugs. An upper portion of the lower pattern group has a first width in the second direction, an upper portion of the upper pattern group has a second width in the second direction, and the first width may be greater than the second width.

    ROBOT COMPRISING LIDAR SENSOR AND METHOD CONTROLLING ROBOT

    公开(公告)号:US20240036213A1

    公开(公告)日:2024-02-01

    申请号:US18203860

    申请日:2023-05-31

    CPC classification number: G01S17/931 G05D1/024 G01S7/4811

    Abstract: An electronic device includes: a first sensor mounted inside a body of the electronic device; a second sensor configured to sense a posture of the body; an optical device configured to: reflect light output from the first sensor by using a mirror, and output the reflected light to an outside of the electronic device through a transparent region in the electronic device; a processor configured to: obtain information on the posture of the body through the second sensor, obtain information on a tilting angle of the mirror based on the obtained posture of the body and a refractive index of the transparent region, and control the mirror based on the obtained information on the tilting angle.

    Electronic device and method of executing function of electronic device

    公开(公告)号:US10911910B2

    公开(公告)日:2021-02-02

    申请号:US16394238

    申请日:2019-04-25

    Abstract: According to various embodiments of the disclosure, an electronic device and a method of executing a function of the electronic device comprise at least one communication circuit, a speaker, a microphone, at least one processor operatively connected with the communication circuit, the speaker, and the microphone, and a memory operatively connected with the at least one processor, wherein the memory stores instructions which, when executed by the at least one processor cause the electronic device to: perform a call with a first external electronic device through the communication circuit, activate a voice-based intelligent service while the call is performed, identify a voice input through the microphone while the call is performed, and transmit data associated with the voice input to an external server through the communication circuit at least in part for automatic speech recognition (ASR) and/or natural language understanding (NLU).

    Method for providing notification and electronic device thereof

    公开(公告)号:US10325454B2

    公开(公告)日:2019-06-18

    申请号:US15888394

    申请日:2018-02-05

    Abstract: A method for providing a notification and/or an electronic device thereof are provided. The electronic device may include an output device, a communication circuitry, and a processor. The processor may be configured to receive a first notification from a first external electronic device via the communication circuitry, receive a second notification from a second external electronic device via the communication circuitry, determine whether the first notification and the second notification match, and when the first notification and the second notification match each other, output an output signal corresponding to a selected notification among the first notification and the second notification through the output device and/or an external output device operatively coupled to the electronic device, and disregard a non-selected notification among the first notification and the second notification.

    Method of laying out a semiconductor device based on switching activity and semiconductor device produced thereby

    公开(公告)号:US10103715B2

    公开(公告)日:2018-10-16

    申请号:US15701110

    申请日:2017-09-11

    Abstract: A method of laying out a semiconductor device includes arranging a flip-flop in the semiconductor device, and rearranging the flip-flop to a selected location in the semiconductor device. The flip-flop may be configured to receive a clock from a clock gating cell through a clock line, to receive an input signal through an input line, and to output an output signal through an output line. The flip-flop may be rearranged based on a length of the clock line, the number of times the clock line is toggled per reference time, a length of the input line, a length of the output line, and at least one of: the number of times that the input signal is toggled per the reference time, and the number of times that the output signal is toggled per the reference time.

    Three-dimensional semiconductor memory devices

    公开(公告)号:US11659712B2

    公开(公告)日:2023-05-23

    申请号:US17712225

    申请日:2022-04-04

    CPC classification number: H01L27/11582 H01L27/1157 H01L27/11565

    Abstract: Disclosed are three-dimensional semiconductor memory devices including an electrode structure including gate electrodes stacked in a first direction, a lower pattern group including lower vertical patterns that are in a lower portion of the electrode structure and are connected to the substrate, and an upper pattern group including upper vertical patterns that are in an upper portion of the electrode structure. The upper vertical patterns may be connected to the lower vertical patterns, respectively. The devices may also include two common source plugs spaced apart from each other in a second direction. The electrode structure may be between the two common source plugs. An upper portion of the lower pattern group has a first width in the second direction, an upper portion of the upper pattern group has a second width in the second direction, and the first width may be greater than the second width.

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