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公开(公告)号：US20160168723A1
公开(公告)日：2016-06-16
申请号：US15052701
申请日：2016-02-24
发明人： Michael R. Feldbaum , Justin Jia-Jen Hwu , David S. Kuo , Gennady Gauzner , Kim Yang Lee , Li-Ping Wang
IPC分类号： C23F4/00
CPC分类号： C23F4/00 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G11B5/855 , Y10T428/265
摘要： The embodiments disclose a method of fabricating a stack, including replacing a metal layer of a stack imprint structure with an oxide layer, patterning the oxide layer stack using chemical etch processes to transfer the pattern image and cleaning etch residue from the stack imprint structure to substantially prevent contamination of the metal layers.
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公开(公告)号：US09683295B2
公开(公告)日：2017-06-20
申请号：US15163214
申请日：2016-05-24
发明人： Michael R. Feldbaum , Koichi Wago , Gennady Gauzner , Kim Y. Lee , David S. Kuo
IPC分类号： H01L21/00 , C23F1/00 , B29C33/38 , G03F7/00 , B29D17/00 , G11B5/855 , G03F7/20 , G03F7/09 , B29K101/00
CPC分类号： C23F1/00 , B29C33/3842 , B29D17/00 , B29K2101/00 , B29K2909/00 , G03F7/0002 , G03F7/0017 , G03F7/09 , G03F7/2002 , G11B5/855 , Y10T428/24802 , Y10T428/24851 , Y10T428/24917
摘要： Provided herein is an apparatus, including a substrate; an etch stop layer overlying the substrate, wherein the etch stop layer is substantially resistant to etching conditions; and a patterned layer overlying the etch stop layer, wherein the patterned layer is substantially labile to the etching conditions, and wherein the patterned layer comprises a number of features including substantially consistent feature profiles among regions of high feature density and regions of low feature density.
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公开(公告)号：US09605348B2
公开(公告)日：2017-03-28
申请号：US15161097
申请日：2016-05-20
发明人： Michael R. Feldbaum , Koichi Wago , Gennady Gauzner , Kim Y. Lee , David S. Kuo
IPC分类号： H01L21/00 , C23F1/00 , B29C33/38 , G03F7/00 , B29D17/00 , G11B5/855 , G03F7/20 , G03F7/09 , B29K101/00
CPC分类号： C23F1/00 , B29C33/3842 , B29D17/00 , B29K2101/00 , B29K2909/00 , G03F7/0002 , G03F7/0017 , G03F7/09 , G03F7/2002 , G11B5/855 , Y10T428/24802 , Y10T428/24851 , Y10T428/24917
摘要： Provided herein is an apparatus, including a substrate; an etch stop layer overlying the substrate, wherein the etch stop layer is substantially resistant to etching conditions; and a patterned layer overlying the etch stop layer, wherein the patterned layer is substantially labile to the etching conditions, and wherein the patterned layer comprises a number of features including substantially consistent feature profiles among regions of high feature density and regions of low feature density.
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4.发明申请公开(公告)号：US20150017483A1
公开(公告)日：2015-01-15
申请号：US14062776
申请日：2013-10-24
发明人： Michael R. Feldbaum , Wago Wago , Bin Lu , David S. Kuo
CPC分类号： G11B5/746 , G11B5/855 , H01F10/123 , H01F41/34
摘要： Provided herein is a method including oxidizing tops of features of a patterned magnetic layer to form oxidized tops of the features; removing an excess of an applied first protective material down to at least the oxidized tops of the features to form a planarized layer; and applying a second protective material over the planarized layer.
摘要翻译： 本文提供了一种方法，包括使图案化磁性层的特征的顶部氧化以形成特征的氧化顶部; 将过量的所施加的第一保护材料除去至少所述特征的氧化顶部以形成平坦化层; 以及在所述平坦化层上施加第二保护材料。
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公开(公告)号：US20160266493A1
公开(公告)日：2016-09-15
申请号：US15161097
申请日：2016-05-20
发明人： Michael R. Feldbaum , Koichi Wago , Gennady Gauzner , Kim Y. Lee , David S. Kuo
IPC分类号： G03F7/09
CPC分类号： C23F1/00 , B29C33/3842 , B29D17/00 , B29K2101/00 , B29K2909/00 , G03F7/0002 , G03F7/0017 , G03F7/09 , G03F7/2002 , G11B5/855 , Y10T428/24802 , Y10T428/24851 , Y10T428/24917
摘要： Provided herein is an apparatus, including a substrate; an etch stop layer overlying the substrate, wherein the etch stop layer is substantially resistant to etching conditions; and a patterned layer overlying the etch stop layer, wherein the patterned layer is substantially labile to the etching conditions, and wherein the patterned layer comprises a number of features including substantially consistent feature profiles among regions of high feature density and regions of low feature density.
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公开(公告)号：US09299380B2
公开(公告)日：2016-03-29
申请号：US14062776
申请日：2013-10-24
发明人： Michael R. Feldbaum , Koichi Wago , Bin Lu , David S. Kuo
CPC分类号： G11B5/746 , G11B5/855 , H01F10/123 , H01F41/34
摘要： Provided herein is a method including oxidizing tops of features of a patterned magnetic layer to form oxidized tops of the features; removing an excess of an applied first protective material down to at least the oxidized tops of the features to form a planarized layer; and applying a second protective material over the planarized layer.
摘要翻译： 本文提供了一种方法，包括使图案化磁性层的特征的顶部氧化以形成特征的氧化顶部; 将过量的所施加的第一保护材料除去至少所述特征的氧化顶部以形成平坦化层; 以及在所述平坦化层上施加第二保护材料。
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公开(公告)号：US11644435B2
公开(公告)日：2023-05-09
申请号：US16845565
申请日：2020-04-10
发明人： ShuaiGang Xiao , David S. Kuo , Xiaomin Yang , Kim Yang Lee , Yautzong Hsu , Michael R. Feldbaum
IPC分类号： G01R27/08 , G01N27/327 , G01N33/487 , C12Q1/6869 , C23C14/00 , B01L3/00 , G01N27/414 , G01N27/447 , B82Y5/00
CPC分类号： G01N27/3278 , B01L3/502707 , B01L3/502715 , B01L3/502761 , C12Q1/6869 , C23C14/00 , G01N27/4145 , G01N27/4146 , G01N27/44791 , G01N33/48721 , B81C2201/0143 , B81C2201/0176 , B81C2201/0181 , B82Y5/00
摘要： A DNA sequencing device and methods of making. The device includes a pair of electrodes having a spacing of no greater than about 2 nm, the electrodes being exposed within a nanopore to measure a DNA strand passing through the nanopore. The device can be made by depositing a conductive layer over a sacrificial channel and then removing the sacrificial channel to form the electrode gap.
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公开(公告)号：US20160265119A1
公开(公告)日：2016-09-15
申请号：US15163214
申请日：2016-05-24
发明人： Michael R. Feldbaum , Koichi Wago , Gennady Gauzner , Kim Y. Lee , David S. Kuo
CPC分类号： C23F1/00 , B29C33/3842 , B29D17/00 , B29K2101/00 , B29K2909/00 , G03F7/0002 , G03F7/0017 , G03F7/09 , G03F7/2002 , G11B5/855 , Y10T428/24802 , Y10T428/24851 , Y10T428/24917
摘要： Provided herein is an apparatus, including a substrate; an etch stop layer overlying the substrate, wherein the etch stop layer is substantially resistant to etching conditions; and a patterned layer overlying the etch stop layer, wherein the patterned layer is substantially labile to the etching conditions, and wherein the patterned layer comprises a number of features including substantially consistent feature profiles among regions of high feature density and regions of low feature density.
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公开(公告)号：US09370907B2
公开(公告)日：2016-06-21
申请号：US14221165
申请日：2014-03-20
发明人： Michael R. Feldbaum , Koichi Wago , Gennady Gauzner , Kim Y. Lee , David S. Kuo
CPC分类号： C23F1/00 , B29C33/3842 , B29D17/00 , B29K2101/00 , B29K2909/00 , G03F7/0002 , G03F7/0017 , G03F7/09 , G03F7/2002 , G11B5/855 , Y10T428/24802 , Y10T428/24851 , Y10T428/24917
摘要： Provided herein is an apparatus, including a substrate; an etch stop layer overlying the substrate, wherein the etch stop layer is substantially resistant to etching conditions; and a patterned layer overlying the etch stop layer, wherein the patterned layer is substantially labile to the etching conditions, and wherein the patterned layer comprises a number of features including substantially consistent feature profiles among regions of high feature density and regions of low feature density.
摘要翻译： 本文提供了一种包括基板的装置; 覆盖衬底的蚀刻停止层，其中蚀刻停止层基本上抵抗蚀刻条件; 以及覆盖在蚀刻停止层上的图案层，其中所述图案化层对于蚀刻条件基本不稳定，并且其中所述图案化层包括多个特征，所述特征包括高特征密度区域和低特征密度区域之间的基本一致的特征轮廓。
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公开(公告)号：US09809887B2
公开(公告)日：2017-11-07
申请号：US15052701
申请日：2016-02-24
发明人： Michael R. Feldbaum , Justin Jia-Jen Hwu , David S. Kuo , Gennady Gauzner , Kim Yang Lee , Li-Ping Wang
CPC分类号： C23F4/00 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G11B5/855 , Y10T428/265
摘要： The embodiments disclose a method of fabricating a stack, including replacing a metal layer of a stack imprint structure with an oxide layer, patterning the oxide layer stack using chemical etch processes to transfer the pattern image and cleaning etch residue from the stack imprint structure to substantially prevent contamination of the metal layers.
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