公开(公告)号：US20240021412A1

公开(公告)日：2024-01-18

申请号：US18119882

申请日：2023-03-10

Applicant: SEMES CO., LTD.

Inventor： Seong Pyo AHN ,  Yoon Jong JU ,  Hyun Min LIM ,  Min Sung HAN ,  Jae Hoo LEE

IPC: H01J37/32

CPC classification number: H01J37/3244 ,  H01J37/32422 ,  H01J37/32082 ,  H01J2237/3343

Abstract: A substrate processing apparatus includes: a processing chamber including a plasma generating region, a gas mixing region, and a substrate processing region; a first gas supply line supplying a first processing gas to the plasma generating region; a second gas supply line supplying a second processing gas to the gas mixing region; an ion blocker disposed between the plasma generating region and the gas mixing region; and a shower head disposed between the gas mixing region and the substrate processing region, wherein the ion blocker has a first blocker flow path unit connected to the second gas supply line and open to the plasma generating region, so that the second processing gas is supplied to the plasma generating region.

公开(公告)号：US20230144896A1

公开(公告)日：2023-05-11

申请号：US17879780

申请日：2022-08-03

Applicant: SEMES CO., LTD.

Inventor： Young Je UM ,  Wan Jae PARK ,  Dong Hun KIM ,  Seong Gil LEE ,  Dong Sub OH ,  Myoung Sub NOH ,  Min Sung HAN ,  Jae Hoo LEE

IPC: H01L21/677 ,  H01L21/67 ,  C23C16/44

CPC classification number: H01L21/67766 ,  H01L21/67103 ,  C23C16/4408 ,  H01L21/67034

Abstract: A substrate treating apparatus configuring an individual LL for each PM and a semiconductor manufacturing facility including the same are provided. The semiconductor manufacturing facility comprises an index module including a first transfer robot and for carrying out and transferring a substrate mounted on a container using the first transfer robot, a transfer module including a second transfer robot and for relaying the substrate transferred by the index module using the second transfer robot, a buffer chamber for heating the substrate relayed by the transfer module, and a process chamber for treating the substrate heated by the buffer chamber, wherein the buffer chamber heats the substrate while the substrate waits before being loaded into the process chamber.

公开(公告)号：US20230317417A1

公开(公告)日：2023-10-05

申请号：US17712055

申请日：2022-04-01

Applicant: SEMES CO., LTD.

Inventor： Min Sung HAN ,  Jae Hoo LEE ,  Yoon Jong JU ,  Wan Jae PARK

IPC: H01J37/32

CPC classification number: H01J37/3244 ,  H01J37/32477 ,  H01J37/32522 ,  H01J37/32422 ,  H01J2237/334 ,  H01L21/31116

Abstract: Provided are a substrate processing apparatus and method for increasing the uniformity of substrate processing. The substrate processing apparatus comprises a first space disposed between an electrode and an ion blocker, a second space disposed between the ion blocker and a shower head, and a processing space for processing a substrate under the shower head, wherein the ion blocker includes a first region and a second region that are separated from each other, and includes a plurality of first supply ports for supplying a first reaction gas to the second space, wherein the plurality of first supply ports are formed in the first region and not formed in the second region, wherein the shower head includes a third region corresponding to the first region, a fourth region corresponding to the second region, and a plurality of second supply ports for supplying a second reaction gas to the second space, wherein the plurality of second supply ports are not formed in the third region, and are formed in the fourth region.

公开(公告)号：US20230144685A1

公开(公告)日：2023-05-11

申请号：US17865930

申请日：2022-07-15

Applicant: SEMES CO., LTD.

Inventor： Min Sung HAN ,  Jae Hoo LEE ,  Seong Hak BAE

IPC: B23Q3/08

CPC classification number: B23Q3/088 ,  B23Q2703/04

Abstract: A substrate processing apparatus including a substrate support unit connected to a vacuum pump to fix a substrate is provided. The substrate processing apparatus comprises a chamber including a processing space therein, a substrate support unit disposed in the processing space and for supporting a substrate, a first vacuum pump, a second vacuum pump connected to the processing space of the chamber, a first valve disposed between the first vacuum pump and the second vacuum pump, and a second valve disposed between the first vacuum pump and the substrate support unit, wherein the first vacuum pump reduces a pressure in a space between the substrate support unit and the substrate to fix the substrate to the substrate support unit in response to the second valve being turned on.