SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

    公开(公告)号:US20240021412A1

    公开(公告)日:2024-01-18

    申请号:US18119882

    申请日:2023-03-10

    Abstract: A substrate processing apparatus includes: a processing chamber including a plasma generating region, a gas mixing region, and a substrate processing region; a first gas supply line supplying a first processing gas to the plasma generating region; a second gas supply line supplying a second processing gas to the gas mixing region; an ion blocker disposed between the plasma generating region and the gas mixing region; and a shower head disposed between the gas mixing region and the substrate processing region, wherein the ion blocker has a first blocker flow path unit connected to the second gas supply line and open to the plasma generating region, so that the second processing gas is supplied to the plasma generating region.

    SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

    公开(公告)号:US20190043741A1

    公开(公告)日:2019-02-07

    申请号:US16051059

    申请日:2018-07-31

    Abstract: The present disclosure relates to a substrate processing apparatus and a substrate processing method. The substrate processing apparatus according to the exemplary embodiment of the present disclosure may include: a processing liquid supply tube; a nozzle unit which is supplied with a processing liquid from the processing liquid supply tube and discharges the processing liquid to the substrate; and a light source unit which is provided to irradiate the processing liquid discharged from the nozzle unit with ultraviolet rays. According to the present disclosure, the processing liquid, which is electrified while passing the processing liquid supply tube, is irradiated with ultraviolet rays, such that electricity is eliminated from the electrified processing liquid, and as a result, it is possible to minimize a problem that the substrate is contaminated by peripheral particles or arcing occurs on the substrate.

    SUBSTRATE PROCESSING APPARATUS AND NOZZLE UNIT

    公开(公告)号:US20200009621A1

    公开(公告)日:2020-01-09

    申请号:US16502272

    申请日:2019-07-03

    Abstract: An apparatus for processing a substrate compries a processing vessel having a processing space inside, a substrate support unit that supports and rotates the substrate in the processing vessel, and a nozzle unit that dispenses a processing liquid onto the substrate. The nozzle unit compries a nozzle that dispenses the processing liquid and an ultraviolet (UV) light supply unit that emits UV light to activate radicals of the processing liquid dispensed onto the substrate.

    SUBSTRATE TREATING APPARATUS AND TREATMENT LIQUID NOZZLE
    4.
    发明申请
    SUBSTRATE TREATING APPARATUS AND TREATMENT LIQUID NOZZLE 审中-公开
    基板处理装置和处理液体喷嘴

    公开(公告)号:US20160218022A1

    公开(公告)日:2016-07-28

    申请号:US15006359

    申请日:2016-01-26

    Applicant: Semes Co., Ltd

    Abstract: Disclosed is a substrate treating apparatus. The substrate treating apparatus includes a housing having a space for treating a substrate in the interior thereof, a spin head which supports and rotates the substrate inside the housing, and an ejection unit having a first nozzle member for ejecting a first treatment liquid onto the substrate positioned on the spin head. The first nozzle member includes a body having an ejection passage, through which the first treatment liquid flows, therein and a first discharge hole communicated with the ejection passage to eject the first treatment liquid onto the substrate, and a vibrator installed in the body to provide vibration for the first treatment liquid flowing through the ejection passage. The vibrator has an interference preventing recess for preventing an interference by reflective waves therein.

    Abstract translation: 公开了一种基板处理装置。 基板处理装置包括:壳体,其具有用于处理其内部的基板的空间;支撑并旋转基板在壳体内部的旋转头;以及喷射单元,其具有用于将第一处理液体喷射到基板上的第一喷嘴构件 位于旋转头上。 第一喷嘴构件包括具有喷射通道的主体,第一处理液体通过喷射通道流动,并且与喷射通道连通的第一排出孔将第一处理液喷射到基板上;以及振动器,安装在主体中以提供 用于流过喷射通道的第一处理液体的振动。 振动器具有防止其中的反射波干涉的防干扰凹部。

    APPARATUS AND METHOD FOR PROCESSING SUBSTRATE USING PLASMA

    公开(公告)号:US20230317417A1

    公开(公告)日:2023-10-05

    申请号:US17712055

    申请日:2022-04-01

    Abstract: Provided are a substrate processing apparatus and method for increasing the uniformity of substrate processing. The substrate processing apparatus comprises a first space disposed between an electrode and an ion blocker, a second space disposed between the ion blocker and a shower head, and a processing space for processing a substrate under the shower head, wherein the ion blocker includes a first region and a second region that are separated from each other, and includes a plurality of first supply ports for supplying a first reaction gas to the second space, wherein the plurality of first supply ports are formed in the first region and not formed in the second region, wherein the shower head includes a third region corresponding to the first region, a fourth region corresponding to the second region, and a plurality of second supply ports for supplying a second reaction gas to the second space, wherein the plurality of second supply ports are not formed in the third region, and are formed in the fourth region.

    SUPPORT UNIT AND SUBSTRATE TREATING APPARATUS

    公开(公告)号:US20230307266A1

    公开(公告)日:2023-09-28

    申请号:US17704218

    申请日:2022-03-25

    CPC classification number: H01L21/67103 H01L21/67248 H01L21/6833

    Abstract: The present invention provides a support unit, including: a support plate on which a substrate is placed, and which includes an electrostatic electrode providing electrostatic force to the substrate; a heater provided inside the support plate and configured to heat the substrate; an insulating plate provided under the support plate as an insulating substance; and a bimetal member disposed inside the support plate and configured to compensate for bending of the support plate due to heat, in which the bimetal member includes: a pin provided to be in contactable with a bottom surface of the substrate that is placed on the support plate; a first member configured to support the pin; and a second member provided to surround the first member, and the pin is provided to move up or move down according to a difference in the amount of thermal deformation between the first member and the second member.

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