公开(公告)号：US20230317435A1

公开(公告)日：2023-10-05

申请号：US18113158

申请日：2023-02-23

Applicant: SEMES CO., LTD.

Inventor： Sunjoo PARK ,  Hyunjong SHIM ,  Sangmin MUN ,  Kyungseok MIN ,  Hwan JUNG ,  Nayeon LEE

IPC: H01J37/32 ,  G01J3/443

CPC classification number: H01J37/32807 ,  H01J37/32724 ,  G01J3/443 ,  H01J37/32862 ,  H01L21/3065

Abstract: Provided is a substrate processing apparatus including a chamber having a processing space therein, a supporting unit arranged in the processing space, having a substrate located thereon, and including a label material layer including a label material therein, a plasma source configured to generate plasma from a processing gas in the processing space, and a measurement apparatus configured to detect the label material, wherein, when the supporting unit is etched to a depth that is greater than or equal to a first depth, the label material layer is exposed.

公开(公告)号：US20180358211A1

公开(公告)日：2018-12-13

申请号：US16002978

申请日：2018-06-07

Applicant: SEMES CO., LTD.

Inventor： Sangmin MUN

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32642 ,  H01J37/32651 ,  H01J37/32715 ,  H01J2237/024 ,  H01J2237/334 ,  H01L21/67069

Abstract: Disclosed is a substrate treating apparatus. The substrate treating apparatus includes a chuck configured to support a substrate in a treatment space of a chamber into which a process gas is supplied, and a ring assembly surrounding the chuck, and the ring assembly includes an inner ring located such that a portion of the inner ring surrounds an outer side of the substrate supported by the chuck, an outer ring located to surround the inner ring, and a driver configured to move the outer ring upwards and downwards.

公开(公告)号：US20230407177A1

公开(公告)日：2023-12-21

申请号：US18332233

申请日：2023-06-09

Applicant: SEMES CO., LTD.

Inventor： Kyungseok MIN ,  Hyunjong SHIM ,  Sangmin MUN ,  Sunjoo PARK ,  Hwan JUNG ,  Nayeon LEE

IPC: C09K13/00

CPC classification number: C09K13/00

Abstract: An etching gas composition includes at least two C3 or C4 organic fluorine compounds and molybdenum fluoride, and the at least two C3 or C4 organic fluorine compounds are isomers.

公开(公告)号：US20230313039A1

公开(公告)日：2023-10-05

申请号：US18189427

申请日：2023-03-24

Applicant: SEMES CO., LTD.

Inventor： Kyungseok MIN ,  Hyunjong SHIM ,  Sangmin MUN ,  Sunjoo PARK ,  Hwan JUNG ,  Nayeon LEE

IPC: C09K13/00 ,  H01L21/311

CPC classification number: C09K13/00 ,  H01L21/31116 ,  H01L21/31144

Abstract: An etching gas composition includes at least two types of organofluorine compounds of carbon number C3 or carbon number C4, wherein the at least two types of organofluorine compounds are isomeric to each other.

公开(公告)号：US20220208526A1

公开(公告)日：2022-06-30

申请号：US17456180

申请日：2021-11-23

Applicant: Semes Co., Ltd.

Inventor： Doosoon KIM ,  Sangmin MUN

IPC: H01J37/32

Abstract: An apparatus for processing a substrate may include an upper electrode, a gas distributing unit disposed under the upper electrode, a shower head disposed under the gas distributing unit, a temperature measuring unit including a first temperature sensor for measuring a temperature of the shower head, and a lower electrode disposed under the shower head. The first temperature sensor may pass through the upper electrode and the lower electrode and may make directly contact with the shower head.