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    Semiconductor device including transistor which includes first gate and second gate
    3.
    发明授权
    Semiconductor device including transistor which includes first gate and second gate 有权

    公开(公告)号：US10522688B2

    公开(公告)日：2019-12-31

    申请号：US15380502

    申请日：2016-12-15

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Kiyoshi Kato ,  Tomoaki Atsumi ,  Shunpei Yamazaki ,  Haruyuki Baba ,  Shinpei Matsuda

    IPC: H01L29/786 ,  H01L27/088 ,  H01L27/12 ,  H01L27/108

    Abstract: A semiconductor device capable of holding data for a long time is provided. The semiconductor device includes a first transistor, a second transistor, and a circuit. The first transistor includes a first gate and a second gate. The first transistor includes a first semiconductor in a channel formation region. The first gate and the second gate overlap with each other in a region with the first semiconductor provided therebetween. The second transistor includes a second semiconductor in a channel formation region. A first terminal of the second transistor is electrically connected to a gate of the second transistor and the second gate. A second terminal of the second transistor is electrically connected to the circuit. The circuit has a function of generating a negative potential. The second semiconductor has a wider bandgap than the first semiconductor.

    Semiconductor Device
    9.
    发明申请
    Semiconductor Device 有权
    半导体器件

    公开(公告)号：US20140361292A1

    公开(公告)日：2014-12-11

    申请号：US14293484

    申请日：2014-06-02

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei Yamazaki ,  Masahiko Hayakawa ,  Shinpei Matsuda ,  Daisuke Matsubayashi

    IPC: H01L29/786

    CPC classification number: H01L29/78648 ,  G02F1/1368 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/3262 ,  H01L29/045 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

    Abstract: Provided is a semiconductor device including a transistor having excellent electrical characteristics (e.g., on-state current, field-effect mobility, or frequency characteristics) or a semiconductor device including a transistor with high reliability. In the channel width direction of a channel-etched transistor in which an oxide semiconductor film is between first and second gate electrodes, the first and second gate electrodes are connected to each other through an opening portion in first and second gate insulating films. In addition, the first and second gate electrodes surround the oxide semiconductor film in a cross-section in the channel width direction, with the first gate insulating film provided between the first gate electrode and the oxide semiconductor film and the second gate insulating film provided between the second gate electrode and the oxide semiconductor film. Furthermore, the channel length of the transistor is 0.5 μm or longer and 6.5 μm or shorter.

    Abstract translation: 提供了包括具有优异的电特性（例如导通电流，场效应迁移率或频率特性）的晶体管或包括具有高可靠性的晶体管的半导体器件的半导体器件。 在其中氧化物半导体膜位于第一和第二栅电极之间的沟道蚀刻晶体管的沟道宽度方向上，第一和第二栅极通过第一和第二栅极绝缘膜中的开口部彼此连接。 此外，第一和第二栅电极在沟道宽度方向的横截面中包围氧化物半导体膜，第一栅极绝缘膜设置在第一栅极和氧化物半导体膜之间，第二栅极绝缘膜设置在第二栅极绝缘膜之间 第二栅电极和氧化物半导体膜。 此外，晶体管的沟道长度为0.5μm以上且6.5μm以下。

    SEMICONDUCTOR DEVICE
    10.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20140339544A1

    公开(公告)日：2014-11-20

    申请号：US14277465

    申请日：2014-05-14

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Kazuya HANAOKA ,  Daisuke Matsubayashi ,  Yoshiyuki Kobayashi ,  Shunpei Yamazaki ,  Shinpei Matsuda

    IPC: H01L29/786

    CPC classification number: H01L29/7869 ,  H01L29/41733 ,  H01L29/785 ,  H01L29/7854 ,  H01L29/78696

    Abstract: Provided is a semiconductor device in which deterioration of electric characteristics which becomes more noticeable as the semiconductor device is miniaturized can be suppressed. The semiconductor device includes a first oxide film, an oxide semiconductor film over the first oxide film, a source electrode and a drain electrode in contact with the oxide semiconductor film, a second oxide film over the oxide semiconductor film, the source electrode, and the drain electrode, a gate insulating film over the second oxide film, and a gate electrode in contact with the gate insulating film. A top end portion of the oxide semiconductor film is curved when seen in a channel width direction.

    Abstract translation: 可以抑制半导体装置小型化时变得更显着的电特性劣化的半导体装置。 半导体器件包括第一氧化物膜，第一氧化物膜上的氧化物半导体膜，与氧化物半导体膜接触的源电极和漏电极，氧化物半导体膜上的第二氧化物膜，源电极和 漏电极，第二氧化膜上的栅极绝缘膜，以及与栅极绝缘膜接触的栅电极。 氧化物半导体膜的顶端部在通道宽度方向观察时呈弯曲状。

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