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    Semiconductor device including semiconductor layer
    3.
    发明授权
    Semiconductor device including semiconductor layer 有权

    公开(公告)号：US10756232B2

    公开(公告)日：2020-08-25

    申请号：US16196091

    申请日：2018-11-20

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei Yamazaki ,  Miyuki Hosoba ,  Suzunosuke Hiraishi

    IPC: H01L33/00 ,  H01L27/12 ,  H01L29/786 ,  G02F1/1368 ,  H01L27/32

    Abstract: Disclosed is a semiconductor device comprising a thin film transistor and wirings connected to the thin film transistor, in which the thin film transistor has a channel formation region in an oxide semiconductor layer, and a copper metal is used for at least one of a gate electrode, a source electrode, a drain electrode, a gate wiring, a source wiring, and a drain wiring. The extremely low off current of the transistor with the oxide semiconductor layer contributes to reduction in power consumption of the semiconductor device. Additionally, the use of the copper metal allows the combination of the semiconductor device with a display element to provide a display device with high display quality and negligible defects, which results from the low electrical resistance of the wirings and electrodes formed with the copper metal.

    Display device including transistor and manufacturing method thereof
    5.
    发明授权
    Display device including transistor and manufacturing method thereof 有权

    公开(公告)号：US10211231B2

    公开(公告)日：2019-02-19

    申请号：US15827318

    申请日：2017-11-30

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Junichiro Sakata ,  Toshinari Sasaki ,  Miyuki Hosoba

    IPC: H01L27/12 ,  H01L21/02 ,  H01L29/786 ,  H01L29/66 ,  H01L29/24

    Abstract: An object is to provide a display device which operates stably with use of a transistor having stable electric characteristics. In manufacture of a display device using transistors in which an oxide semiconductor layer is used for a channel formation region, a gate electrode is further provided over at least a transistor which is applied to a driver circuit. In manufacture of a transistor in which an oxide semiconductor layer is used for a channel formation region, the oxide semiconductor layer is subjected to heat treatment so as to be dehydrated or dehydrogenated; thus, impurities such as moisture existing in an interface between the oxide semiconductor layer and the gate insulating layer provided below and in contact with the oxide semiconductor layer and an interface between the oxide semiconductor layer and a protective insulating layer provided on and in contact with the oxide semiconductor layer can be reduced.

    Display device and method for manufacturing the same
    8.
    发明授权
    Display device and method for manufacturing the same 有权
    显示装置及其制造方法

    公开(公告)号：US08994889B2

    公开(公告)日：2015-03-31

    申请号：US14502012

    申请日：2014-09-30

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei Yamazaki ,  Junichiro Sakata ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba ,  Masayuki Sakakura ,  Yoshiaki Oikawa

    IPC: G02F1/136 ,  H01L27/12 ,  H01L21/02 ,  H01L21/477 ,  H01L29/66

    CPC classification number: H01L21/477 ,  G02F1/133345 ,  G02F1/1368 ,  H01L21/02565 ,  H01L21/02664 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1251 ,  H01L27/1259 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

    Abstract: An object is to provide a display device with excellent display characteristics, where a pixel circuit and a driver circuit provided over one substrate are formed using transistors which have different structures corresponding to characteristics of the respective circuits. The driver circuit portion includes a driver circuit transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using a metal film, and a channel layer is formed using an oxide semiconductor. The pixel portion includes a pixel transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using an oxide conductor, and a semiconductor layer is formed using an oxide semiconductor. The pixel transistor is formed using a light-transmitting material, and thus, a display device with higher aperture ratio can be manufactured.

    Abstract translation: 本发明的目的是提供具有优异显示特性的显示装置，其中使用具有对应于各个电路的特性的不同结构的晶体管形成设置在一个基板上的像素电路和驱动电路。 驱动器电路部分包括驱动电路晶体管，其中使用金属膜形成栅电极层，源电极层和漏电极层，并且使用氧化物半导体形成沟道层。 像素部分包括其中使用氧化物导体形成栅电极层，源电极层和漏电极层的像素晶体管，并且使用氧化物半导体形成半导体层。 像素晶体管使用透光材料形成，因此可以制造具有较高开口率的显示装置。

    Method for manufacturing semiconductor device
    9.
    发明授权
    Method for manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US08878178B2

    公开(公告)日：2014-11-04

    申请号：US13706569

    申请日：2012-12-06

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunichi Ito ,  Miyuki Hosoba

    IPC: H01L29/12 ,  H01L29/04 ,  H01L31/20 ,  H01L29/786 ,  H01L27/12

    CPC classification number: H01L29/78693 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1288 ,  H01L29/7869

    Abstract: An object is to manufacture a semiconductor device including an oxide semiconductor at low cost with high productivity in such a manner that a photolithography process is simplified by reducing the number of light-exposure masks. In a method for manufacturing a semiconductor device including a channel-etched inverted-stagger thin film transistor, an oxide semiconductor film and a conductive film are etched using a mask layer formed with the use of a multi-tone mask which is a light-exposure mask through which light is transmitted so as to have a plurality of intensities. The etching step is performed by wet etching in which an etching solution is used.

    Abstract translation: 目的是以低成本，高生产率制造包括氧化物半导体的半导体器件，使得通过减少曝光掩模的数量来简化光刻工艺。 在制造包括通道蚀刻反向交错薄膜晶体管的半导体器件的方法中，使用使用作为曝光的多色调掩模形成的掩模层来蚀刻氧化物半导体膜和导电膜 光透过该掩模以具有多个强度。 蚀刻步骤通过使用蚀刻溶液的湿蚀刻进行。

    Semiconductor device and manufacturing method the same
    10.
    发明授权
    Semiconductor device and manufacturing method the same 有权
    半导体器件和制造方法相同

    公开(公告)号：US08513053B2

    公开(公告)日：2013-08-20

    申请号：US13758141

    申请日：2013-02-04

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei Yamazaki ,  Hiroki Ohara ,  Junichiro Sakata ,  Toshinari Sasaki ,  Miyuki Hosoba

    IPC: H01L21/34

    CPC classification number: H01L27/127 ,  H01L21/477 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1274 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78693

    Abstract: An object is to manufacture and provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which a semiconductor layer including a channel formation region serves as an oxide semiconductor film, heat treatment for reducing impurities such as moisture (heat treatment for dehydration or dehydrogenation) is performed after an oxide insulating film serving as a protective film is formed in contact with an oxide semiconductor layer. Then, the impurities such as moisture, which exist not only in a source electrode layer, in a drain electrode layer, in a gate insulating layer, and in the oxide semiconductor layer but also at interfaces between the oxide semiconductor film and upper and lower films which are in contact with the oxide semiconductor layer, are reduced.

    Abstract translation: 目的是制造和提供包括具有稳定电特性的薄膜晶体管的高度可靠的半导体器件。 在包括薄膜晶体管的半导体器件的制造方法中，其中包括沟道形成区域的半导体层用作氧化物半导体膜，用于减少诸如水分的杂质（脱水或脱氢热处理）的热处理在 形成与氧化物半导体层接触的用作保护膜的氧化物绝缘膜。 然后，在漏极电极层，栅极绝缘层和氧化物半导体层中以及在氧化物半导体膜和上下膜之间的界面处不仅在源电极层中存在的诸如水分的杂质 它们与氧化物半导体层接触。

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