公开(公告)号：US20180110162A1

公开(公告)日：2018-04-19

申请号：US15730361

申请日：2017-10-11

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Akihiko ITO ,  Yoshinao KAMO ,  Shigeki MATSUNAKA ,  Atsushi FUJITA

IPC: H05K9/00 ,  H01L21/56

CPC classification number: H05K9/0084 ,  H01L21/561 ,  H01L21/565 ,  H01L21/67092 ,  H01L21/6835 ,  H01L21/68764 ,  H01L21/68771 ,  H01L23/552 ,  H05K9/0024

Abstract: An electronic component, an electronic component manufacturing apparatus, and an electronic component manufacturing method are provided which enable an electromagnetic wave shielding film formed on a package to achieve an excellent shielding characteristic. An electronic component 10 includes an electromagnetic wave shielding film 13 formed on the top face of a package sealing elements. The thickness of the electromagnetic wave shielding film 13 on the top face of the package 12 is 0.5 to 9 μm, and the relationship between the average height Rc of the roughness curvature factor of the top face of the package 12 and the thickness Te of the electromagnetic wave shielding film 13 is Rc≤2Te.

公开(公告)号：US20230366077A1

公开(公告)日：2023-11-16

申请号：US18029054

申请日：2021-09-15

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Shigeki MATSUNAKA ,  Atsushi FUJITA

IPC: C23C14/06 ,  C23C14/34 ,  C23C14/48 ,  H01L21/02 ,  H01J37/34

CPC classification number: C23C14/0617 ,  C23C14/3485 ,  C23C14/48 ,  H01L21/0254 ,  H01L21/02631 ,  H01J37/3467

Abstract: According to an embodiment, a film formation apparatus and a film formation method that can form GaN film with high productivity are provided. The film formation apparatus includes: the chamber which an interior thereof can be made vacuum; the rotary table provided inside the chamber, holding a workpiece, and circulating and transporting the workpiece in a circular trajectory, a GaN film formation processing unit including a target formed of film formation material containing GaN and a plasma generator which turns sputtering gas introduced between the target and the rotary table into plasma, the GaN film formation processing unit depositing by sputtering particles of the film formation material containing GaN on the workpiece circulated and transported by the rotary table; and a nitriding processing unit nitriding particles of the film formation material deposited on the workpiece circulated and transported by the rotary table in the GaN film formation processing unit.

公开(公告)号：US20210305171A1

公开(公告)日：2021-09-30

申请号：US17205098

申请日：2021-03-18

Applicant: Shibaura Mechatronics Corporation

Inventor： Hisashi NISHIGAKI ,  Atsushi FUJITA ,  Shohei TANABE ,  Yoshinao KAMO ,  Shigeki MATSUNAKA

IPC: H01L23/552 ,  H01F10/26 ,  H01F10/30 ,  H05K9/00 ,  H01L23/00

Abstract: According to one embodiment, an electromagnetic wave attenuator includes a first structure body. The first structure body includes a first member, a second member, and a third member. The first member includes a first magnetic layer and a first nonmagnetic layer alternately provided in a first direction. The first nonmagnetic layer is conductive. The first direction is a stacking direction. The second member includes a second magnetic layer and a second nonmagnetic layer alternately provided in the first direction. The second nonmagnetic layer is conductive. The third member includes a third nonmagnetic layer. The third nonmagnetic layer is conductive. A direction from the third member toward the first member is along the first direction. A direction from the third member toward the second member is along the first direction. A first magnetic layer thickness is greater than a second magnetic layer thickness.

公开(公告)号：US20230326875A1

公开(公告)日：2023-10-12

申请号：US18328892

申请日：2023-06-05

Applicant: Shibaura Mechatronics Corporation

Inventor： Hisashi NISHIGAKI ,  Atsushi FUJITA ,  Shohei TANABE ,  Yoshinao KAMO ,  Shigeki MATSUNAKA

IPC: H01L23/552 ,  H01F10/26 ,  H01F10/30 ,  H01L23/00 ,  H05K9/00

CPC classification number: H01L23/552 ,  H01F10/265 ,  H01F10/30 ,  H01L24/32 ,  H05K9/0088 ,  H01L2924/3025 ,  H01L2224/32225

Abstract: According to one embodiment, an electromagnetic wave attenuator includes a first structure body. The first structure body includes a first member, a second member, and a third member. The first member includes a first magnetic layer and a first nonmagnetic layer alternately provided in a first direction. The first nonmagnetic layer is conductive. The first direction is a stacking direction. The second member includes a second magnetic layer and a second nonmagnetic layer alternately provided in the first direction. The second nonmagnetic layer is conductive. The third member includes a third nonmagnetic layer. The third nonmagnetic layer is conductive. A direction from the third member toward the first member is along the first direction. A direction from the third member toward the second member is along the first direction. A first magnetic layer thickness is greater than a second magnetic layer thickness.

公开(公告)号：US20180163295A1

公开(公告)日：2018-06-14

申请号：US15838982

申请日：2017-12-12

Applicant: Shibaura Mechatronics Corporation

Inventor： Akihiko ITO ,  Yoshinao KAMO ,  Shigeki MATSUNAKA ,  Atsushi FUJITA

IPC: C23C14/34 ,  H01L21/56 ,  H01L23/31 ,  H01L23/552 ,  H01L23/00 ,  C23C14/50 ,  C23C16/458 ,  H01J37/32 ,  H01J37/34

CPC classification number: C23C14/3464 ,  C23C14/022 ,  C23C14/185 ,  C23C14/34 ,  C23C14/505 ,  C23C14/541 ,  C23C16/458 ,  H01J37/32 ,  H01J37/32715 ,  H01J37/34 ,  H01J37/3429 ,  H01L21/561 ,  H01L21/563 ,  H01L21/67132 ,  H01L21/6835 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68778 ,  H01L23/3121 ,  H01L23/552 ,  H01L24/97 ,  H01L2221/68313

Abstract: A film formation apparatus includes a carrying unit circulating and carrying an electronic component in a chamber, a film formation processing unit forming a film on the electronic component, a tray carried by the carrying unit, and including a mount surface, and a mount member which is mounted on the mount surface, and on which the electronic component is placed. The mount member includes a holding sheet having an adhesive surface, and a non-adhesive surface, and a sticking sheet having a first sticking surface with adhesiveness sticking to the non-adhesive surface, and a second sticking surface with adhesiveness sticking to the mount surface of the tray. The adhesive surface includes a pasting region for pasting the electronic components. The first sticking surface sticks across an entire region of the non-adhesive surface corresponding to at least the pasting region.