公开(公告)号：US09287374B2

公开(公告)日：2016-03-15

申请号：US14315170

申请日：2014-06-25

申请人： SK HYNIX INC.

发明人： Yu Jun Lee ,  Kyoung Chul Jang

IPC分类号： H01L21/762 ,  H01L21/265 ,  H01L29/423 ,  H01L29/78 ,  H01L27/105 ,  H01L29/06 ,  H01L21/311 ,  H01L21/768 ,  H01L27/108 ,  H01L21/02 ,  H01L21/8242

CPC分类号： H01L29/4236 ,  H01L21/02329 ,  H01L21/26506 ,  H01L21/26586 ,  H01L21/31111 ,  H01L21/31155 ,  H01L21/76224 ,  H01L21/76897 ,  H01L27/1052 ,  H01L27/10823 ,  H01L27/11568 ,  H01L29/0642 ,  H01L29/78 ,  H01L29/7923

摘要： A semiconductor device and a method for forming the same are disclosed. The semiconductor device includes an active region, a device isolation film, a first liner nitride film disposed over a lower portion of a sidewall of the active region, and a second liner nitride film disposed over an upper portion of the sidewall of the active region and having a higher density of nitrogen than a density of nitrogen in the first liner nitride film.

摘要翻译： 公开了半导体器件及其形成方法。 半导体器件包括有源区，器件隔离膜，设置在有源区的侧壁的下部的第一衬里氮化物膜，以及设置在有源区的侧壁的上部之上的第二衬里氮化物膜， 具有比第一衬里氮化物膜中的氮密度高的氮密度。

公开(公告)号：US08835259B2

公开(公告)日：2014-09-16

申请号：US13960512

申请日：2013-08-06

申请人： SK Hynix Inc.

发明人： Kyoung Chul Jang

IPC分类号： H01L29/78 ,  H01L29/423 ,  H01L29/49 ,  H01L29/40 ,  H01L21/265 ,  H01L21/8234 ,  H01L27/108

CPC分类号： H01L29/401 ,  H01L21/265 ,  H01L21/823456 ,  H01L21/823481 ,  H01L27/10876 ,  H01L27/10891 ,  H01L29/4236 ,  H01L29/4966

摘要： Provided are a transistor of a semiconductor device and a method for manufacturing the same. A gate induced drain leakage (GIDL) current is reduced by decreasing a work function at an upper portion of a gate electrode, and a threshold voltage of the transistor is maintained by maintaining a work function at a lower portion of the gate electrode at a high level, thereby reducing a leakage current of the transistor and reducing a read time and a write time of the semiconductor device. The transistor of the semiconductor device includes: a recess with a predetermined depth in a semiconductor substrate; a first gate electrode disposed within the recess; and a second gate electrode disposed on the first gate electrode into which ions of one or more of nitrogen (N), oxygen (O), arsenic (As), aluminum (Al), and hydrogen (H) are doped.

摘要翻译： 提供半导体器件的晶体管及其制造方法。 通过降低栅电极的上部的功函数来减小栅极感应漏极漏电流（GIDL），并且通过将栅电极的下部的功函数维持在高位置来维持晶体管的阈值电压 电平，从而减小晶体管的漏电流并减少半导体器件的读取时间和写入时间。 半导体器件的晶体管包括：在半导体衬底中具有预定深度的凹槽; 设置在所述凹部内的第一栅电极; 以及第二栅电极，其设置在第一栅极上，掺杂有氮（N），氧（O），砷（As），铝（Al）和氢（H）中的一种或多种的离子。

公开(公告)号：US09553167B2

公开(公告)日：2017-01-24

申请号：US14818879

申请日：2015-08-05

申请人： SK hynix Inc.

发明人： Kyoung Chul Jang

IPC分类号： H01L29/02 ,  H01L29/66 ,  H01L29/78 ,  H01L29/423 ,  H01L29/49 ,  H01L29/36 ,  H01L21/283 ,  H01L21/3215 ,  H01L21/306

CPC分类号： H01L29/66613 ,  H01L21/283 ,  H01L21/30604 ,  H01L21/3215 ,  H01L21/76224 ,  H01L29/1083 ,  H01L29/36 ,  H01L29/4236 ,  H01L29/4966 ,  H01L29/66621 ,  H01L29/78

摘要： A semiconductor device is disclosed. The semiconductor device comprising: a semiconductor substrate having first type conductivity and including an active region and a device isolation film, a doping layer having second type conductivity and buried in a bottom part of the semiconductor substrate of the active region, a recess formed in the semiconductor substrate, a gate electrode provided in the recess.

摘要翻译： 公开了一种半导体器件。 该半导体器件包括：具有第一类型导电性并包括有源区和器件隔离膜的半导体衬底，具有第二类型导电性并埋在有源区的半导体衬底的底部中的掺杂层， 半导体衬底，设置在凹部中的栅电极。

公开(公告)号：US09502526B2

公开(公告)日：2016-11-22

申请号：US14990396

申请日：2016-01-07

申请人： SK hynix Inc.

发明人： Kyoung Chul Jang

IPC分类号： H01L29/66 ,  H01L21/336 ,  H01L29/423 ,  H01L29/78 ,  H01L29/10 ,  H01L29/51 ,  H01L21/306 ,  H01L21/02 ,  H01L27/108 ,  H01L29/49 ,  H01L21/283

CPC分类号： H01L29/66484 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/0228 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/283 ,  H01L21/30604 ,  H01L27/10891 ,  H01L29/1083 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/4966 ,  H01L29/511 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66621 ,  H01L29/7831

摘要： A semiconductor device includes a semiconductor substrate including a trench, a gate insulation film located over a bottom and sidewall of the trench, a first gate formed over the gate insulation film and in a lower portion of the trench, a second gate formed over the first gate and in an upper portion of the trench, a multi-layered structure provided between the gate insulation film and the second gate.

公开(公告)号：US09269780B2

公开(公告)日：2016-02-23

申请号：US14495582

申请日：2014-09-24

申请人： SK hynix Inc.

发明人： Kyoung Chul Jang

IPC分类号： H01L29/66 ,  H01L29/76 ,  H01L29/423 ,  H01L29/78 ,  H01L29/10 ,  H01L29/51 ,  H01L21/306 ,  H01L21/02 ,  H01L27/108

CPC分类号： H01L29/66484 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/0228 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/283 ,  H01L21/30604 ,  H01L27/10891 ,  H01L29/1083 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/4966 ,  H01L29/511 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66621 ,  H01L29/7831

摘要： A semiconductor device includes a semiconductor substrate including a trench, a gate insulation film located over a bottom and sidewall of the trench, a first gate formed over the gate insulation film and in a lower portion of the trench, a second gate formed over the first gate and in an upper portion of the trench, a multi-layered structure provided between the gate insulation film and the second gate.

摘要翻译： 半导体器件包括半导体衬底，其包括沟槽，位于沟槽的底部和侧壁上方的栅极绝缘膜，形成在栅极绝缘膜上方和沟槽下部的第一栅极，形成在第一栅极上的第二栅极 栅极和沟槽的上部，设置在栅极绝缘膜和第二栅极之间的多层结构。