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    SEMICONDUCTOR DEVICE AND METHOD OF OPERATING THE SAME
    2.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF OPERATING THE SAME 有权
    半导体器件及其操作方法

    公开(公告)号：US20140063971A1

    公开(公告)日：2014-03-06

    申请号：US13717385

    申请日：2012-12-17

    申请人： SK HYNIX INC.

    发明人： Sang Kyu LEE ,  Min Ho HER ,  Myung Su KIM

    IPC分类号： G11C16/10 ,  G11C16/04

    CPC分类号： G11C16/10 ,  G11C16/04 ,  G11C16/0483 ,  G11C16/26 ,  G11C16/3404 ,  G11C16/349

    摘要： A method of operating a semiconductor device includes storing a supplying condition of a read voltage inputted from an external source into an internal register to perform a read operation of memory cells, performing the read operation repetitively with changing levels of the read voltage according to the supplying condition of the read voltage in the event that the number of error bits in a data read from the memory cells exceeds an allowable range, and storing an iteration number of the read operation in the internal register in case the number of the error bits falls within the allowable range.

    摘要翻译： 一种操作半导体器件的方法包括：将从外部源输入的读取电压的供给条件存储到内部寄存器中，以执行存储单元的读取操作，并根据供给来改变读取电压的电平来重复执行读取操作 在从存储器单元读取的数据中的错误位的数量超过容许范围的情况下读取电压的条件，并且在错误位的数目落入内部的情况下，将读取操作的迭代次数存储在内部寄存器中 允许范围。

    SEMICONDUCTOR DEVICE AND OPERATING METHOD THEREOF
    4.
    发明申请
    SEMICONDUCTOR DEVICE AND OPERATING METHOD THEREOF 有权
    半导体器件及其工作方法

    公开(公告)号：US20160293271A1

    公开(公告)日：2016-10-06

    申请号：US14953194

    申请日：2015-11-27

    申请人： SK hynix Inc.

    发明人： Sam Kyu WON ,  Myung Su KIM ,  Jae Won CHA

    IPC分类号： G11C29/04 ,  G11C16/34 ,  G11C16/12 ,  G11C16/28

    CPC分类号： G11C29/025 ,  G11C16/28 ,  G11C16/3459 ,  G11C16/349 ,  G11C29/12005 ,  G11C29/50004 ,  G11C2029/1202

    摘要： A method of operating a semiconductor memory device includes applying a program pulse at least once to each of a plurality of pages; performing a pre-read operation on a reference page among the plurality of pages through an initial test voltage; repeating the pre-read operation by controlling the initial test voltage until a result of the pre-read operation is a pass; setting the initial test voltage of when the result of the pre-read operation is the pass as a reference test voltage; and detecting a defective page among the plurality of pages by performing read operations on the plurality of pages through the reference test voltage.

    摘要翻译： 一种操作半导体存储器件的方法包括至少对多个页面中的每一个施加一个编程脉冲; 通过初始测试电压在多个页面中的参考页面上执行预读操作; 通过控制初始测试电压重复预读操作，直到预读操作的结果通过; 将预读操作的结果作为参考测试电压设置为初始测试电压; 以及通过参考测试电压对多个页面进行读取操作来检测多个页面中的缺陷页面。

    MEMORY SYSTEM, SEMICONDUCTOR MEMORY DEVICE AND OPERATING METHOD THEREOF
    5.
    发明申请
    MEMORY SYSTEM, SEMICONDUCTOR MEMORY DEVICE AND OPERATING METHOD THEREOF 有权
    存储器系统，半导体存储器件及其操作方法

    公开(公告)号：US20140337574A1

    公开(公告)日：2014-11-13

    申请号：US14030730

    申请日：2013-09-18

    申请人： SK HYNIX INC

    发明人： Wan Ik CHO ,  Sang Kyu LEE ,  Myung Su KIM ,  Seung Jae CHUNG

    IPC分类号： G06F3/06

    CPC分类号： G06F13/1668 ,  G06F12/0246 ,  G06F13/1673 ,  G06F2212/2022

    摘要： Disclosed are a memory system, a semiconductor memory device and a method of operating the same. The memory system includes: a memory controller to output a command, address and data; and a semiconductor memory device to store at least one page data in each memory cell in response to the command, the address and the data, the memory controller to separately output first address used for determining the at least one page data from the data and second address used for determining a word line coupled to at least one memory cell.

    摘要翻译： 公开了一种存储器系统，半导体存储器件及其操作方法。 存储器系统包括：存储器控制器，用于输出命令，地址和数据; 以及半导体存储器件，用于响应于命令，地址和数据，在每个存储器单元中存储至少一个页数据，存储器控制器分别从数据中输出用于确定至少一个页数据的第一地址，第二 用于确定耦合到至少一个存储器单元的字线的地址。

    SEMICONDUCTOR DEVICE AND METHOD FOR OPERATING THE SAME
    7.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR OPERATING THE SAME 有权
    半导体器件及其操作方法

    公开(公告)号：US20150124525A1

    公开(公告)日：2015-05-07

    申请号：US14177166

    申请日：2014-02-10

    申请人： SK HYNIX INC.

    发明人： Myung Su KIM ,  Wan Ik CHO

    IPC分类号： G11C16/26 ,  G11C16/24 ,  G11C16/10

    CPC分类号： G11C16/26 ,  G11C11/5628 ,  G11C16/10 ,  G11C16/107 ,  G11C16/24 ,  G11C16/3454

    摘要： A semiconductor device comprises a memory cell array comprising memory cells coupled to word lines and bit lines, a voltage generator suitable for generating a drive voltage to be applied to a selected word line, and a control logic suitable for detecting the number of pulses of a program voltage received from the memory cell array in a program operation, storing bias information corresponding to the detected number of pulses in a register, and controlling a level of the program voltage for a subsequent program operation based on the bias information.

    摘要翻译： 半导体器件包括存储单元阵列，该存储单元阵列包括耦合到字线和位线的存储器单元，适于产生要施加到选定字线的驱动电压的电压发生器，以及适用于检测一个 在编程操作中从存储单元阵列接收的编程电压，存储与寄存器中检测到的脉冲数相对应的偏置信息，以及基于偏置信息来控制用于后续编程操作的编程电压的电平。