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公开(公告)号：US20250054530A1
公开(公告)日：2025-02-13
申请号：US18399456
申请日：2023-12-28
Applicant: SK hynix Inc.
Inventor： Tae Jung HA
IPC: G11C11/16
Abstract: Memory devices and operating methods are disclosed. In an embodiment, a memory device may include a memory cell array including a plurality of memory cells, each of the plurality of memory cells configured to store a data value corresponding to read data to be read out through a plurality of conductive lines, and a read circuit connected to the plurality of conductive to generate the read data corresponding to the data value stored in a selected memory cell among the plurality of memory cells based on or according to whether there is a change in a cell current flowing through the selected memory cell during a single read period.
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公开(公告)号：US20230326523A1
公开(公告)日：2023-10-12
申请号：US18188332
申请日：2023-03-22
Applicant: SK hynix Inc. , Foundation for Research and Business, Seoul National University of Science and Technology , INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY ERICA CAMPUS
Inventor： Tae Jung HA , Soo Gil KIM , Jeong Hwan SONG , Byung Joon CHOI , Ha Young LEE
CPC classification number: G11C13/003 , G11C11/1659 , G11C2213/72
Abstract: Operating a selector device that controls access of a signal to a memory element may comprise applying a main operating voltage pulse and a refresh voltage pulse to the selector device. The refresh voltage pulse and main operating voltage pulse have opposite polarities. A magnitude of the main operating voltage pulse is greater than or equal to a threshold voltage for turning on the selector device, and a maximum magnitude of the refresh voltage pulse is less than the threshold voltage. The refresh voltage pulse reduces a difference between the threshold voltage and a turn-off voltage of the selector device, and may be applied immediately before or immediately after the main operating voltage pulse. An electronic circuit may include the selector device and a driving circuit for apply the pulses. A nonvolatile memory may include the driving circuit and a plurality of nonvolatile memory elements each including a selector device.
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公开(公告)号：US20230005537A1
公开(公告)日：2023-01-05
申请号：US17855424
申请日：2022-06-30
Applicant: SK hynix Inc. , Industry-University Cooperation Foundation Hanyang University ERICA Campus
Inventor： Tae Jung HA , Soo Gil KIM , Jeong Hwan SONG , Tae Joo PARK , Tae Jun SEOK , Hye Rim KIM , Hyun Seung CHOI
Abstract: Disclosed are a method of operating a selector device, a method of operating a nonvolatile memory apparatus to which the selector device is applied, an electronic circuit device including the selector device, and a nonvolatile memory apparatus. The method of operating the selector device controls access to a memory element, and includes providing the selector device including a switching layer and first and second electrodes disposed on both surfaces of the switching layer, which includes an insulator and a metal element, and applying a multi-step voltage pulse to the switching layer via the first and second electrodes to adjust a threshold voltage of the selector device, the multi-step voltage pulse including a threshold voltage control pulse and an operating voltage pulse. The operating voltage pulse has a magnitude for turning on the selector device, and the threshold voltage control pulse has a lower magnitude lower than the operating voltage pulse.
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公开(公告)号：US20240349513A1
公开(公告)日：2024-10-17
申请号：US18467617
申请日：2023-09-14
Applicant: SK hynix Inc.
Inventor： Tae Jung HA
IPC: H10B61/00
CPC classification number: H10B61/00
Abstract: A semiconductor device includes: a first contact plug disposed over the substrate; two or more insulating patterns disposed on a side surface of the first contact plug and sequentially along a direction away from the first contact plug; and a memory pattern connected to the first contact plug, wherein an upper surface of the first contact plug and upper surfaces of the insulating patterns form an inclined surface whose height decreases as a distance from a center of the first contact plug increases, the inclined surface includes a first inclined surface disposed on a first side of the center of the first contact plug and a second inclined surface disposed on second side of the center of the first contact plug, the second side opposite to the first side, and the memory pattern has a lower surface in contact with the first inclined surface.
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公开(公告)号：US20190074436A1
公开(公告)日：2019-03-07
申请号：US15977606
申请日：2018-05-11
Applicant: SK hynix Inc.
Inventor： Tae Jung HA , Soo Gil KIM
IPC: H01L45/00
Abstract: A switching device includes a first switching element having a snap-back behavior characteristic, an output voltage of the first switching element decreasing when an input current increases from a turn-on threshold current of the first switching element. The switching device further includes a second switching element having a continuous-resistance behavior characteristic, an output voltage of the second switching element increasing when the input current increases from a turn-on threshold current of the second switching element. The turn-on threshold current of the first switching element is lower than the turn-on threshold current of the second switching element.
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Patent Agency Ranking
公开(公告)号：US20190013465A1
公开(公告)日：2019-01-10
申请号：US15942236
申请日：2018-03-30
Applicant: SK hynix Inc.
Inventor： Tae Jung HA
Abstract: A resistance change memory device is provided. The resistance change memory device includes a lower electrode, a tunneling barrier layer disposed on the lower electrode, a resistance switching layer disposed on the tunneling barrier layer, an oxygen vacancy reservoir layer disposed on the resistance switching layer, and an upper electrode disposed on the oxygen vacancy reservoir layer. The oxygen vacancy reservoir layer is electrically conductive.
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公开(公告)号：US20170372778A1
公开(公告)日：2017-12-28
申请号：US15435158
申请日：2017-02-16
Applicant: SK hynix Inc.
Inventor： Tae Jung HA
CPC classification number: G11C13/004 , G11C11/16 , G11C13/0004 , G11C13/0007 , G11C13/0097 , G11C2013/005 , G11C2013/0054 , G11C2213/72 , G11C2213/76
Abstract: A method of sensing a resistance change memory device includes preparing a memory cell including a variable resistance element storing different data on the basis of a variable resistance, and a switching element connected to the variable resistance element and performing a threshold switching operation, measuring a first cell current by applying a first read voltage to the memory cell, the first read voltage being selected in a threshold-sensing range of a current-voltage characteristic curve of the memory cell, measuring a second cell current by applying a second read voltage to the memory cell, the second read voltage being selected in a resistance-sensing range of the current-voltage characteristic curve, and when at least one of the first cell current and the second cell current is greater than a corresponding reference current, outputting a data signal having a first logic value as data stored in the memory cell.
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公开(公告)号：US20240172452A1
公开(公告)日：2024-05-23
申请号：US18315149
申请日：2023-05-10
Applicant: SK hynix Inc.
Inventor： Tae Jung HA
Abstract: A semiconductor device may include: first conductive lines extending in a first direction; second conductive lines extending a second direction crossing the first direction; a plurality of first memory cells disposed at first intersections of the first conductive lines and the second conductive lines, respectively, each first memory cell including a first memory layer and a first selector layer that is disposed over the first memory layer; and a plurality of second memory cells disposed at second intersections of the first conductive lines and the second conductive lines, each second memory cell including a second selector layer and a second memory layer that is disposed over the second selector layer, wherein each of the first memory cells and each of the second memory cells are alternately disposed along the first direction and the second direction.
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公开(公告)号：US20230413693A1
公开(公告)日：2023-12-21
申请号：US17992782
申请日：2022-11-22
Applicant: SK hynix Inc.
Inventor： Jeong Hwan SONG , Tae Jung HA
IPC: H01L47/00 , H01L23/528
CPC classification number: H01L45/122 , H01L27/24 , H01L45/145 , H01L23/5283
Abstract: A semiconductor device may include: a plurality of first conductive lines extending in a first direction; a plurality of second conductive lines spaced apart from the first conductive lines and extending in a second direction intersecting the first direction; and a plurality of memory cells respectively disposed to overlap intersection regions of the plurality of the first conductive lines and the plurality of the second conductive lines; and a layer structured to include an insulating material containing metal ions and formed between each memory cell and at least one of a first conductive line and a second conductive line that intersects with each other at a memory cell.
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公开(公告)号：US20220109026A1
公开(公告)日：2022-04-07
申请号：US17204822
申请日：2021-03-17
Applicant: SK hynix Inc.
Inventor： Tae Jung HA , Jeong Hwan SONG
Abstract: An electronic device may include a semiconductor memory structured to include a plurality of memory cells, wherein each of the plurality of memory cells may comprise: a first electrode layer; a second electrode layer; and a selection element layer disposed between the first electrode layer and the second electrode layer to electrically couple or decouple an electrical connection between the first electrode layer and the second electrode layer based on a magnitude of an applied voltage or an applied current with respect to a threshold magnitude, wherein the selection element layer has a dopant concentration profile which decreases from an interface between the selection element layer and the first electrode layer toward an interface between the selection element layer and the second electrode layer.
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