公开(公告)号：US11595021B2

公开(公告)日：2023-02-28

申请号：US16493560

申请日：2018-03-09

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ,  SOITEC

Inventor： Thu Trang Vo ,  Jean-Sebastien Moulet ,  Alexandre Reinhardt ,  Isabelle Huyet ,  Alexis Drouin ,  Yann Sinquin

IPC: H03H9/02 ,  H03H3/08 ,  H03H9/145 ,  H03H9/25

Abstract: The invention relates to a SAW resonator (100) comprising at least: a substrate (102); a layer (108) of piezoelectric material arranged on the substrate; a first attenuation layer (112) arranged between the substrate and the layer of piezoelectric material, and/or, when the substrate comprises at least two different layers (104, 106), a second attenuation layer (114) arranged between the two layers of the substrate; and in which the at least one attenuation layer is/are heterogeneous.

公开(公告)号：US20200044140A1

公开(公告)日：2020-02-06

申请号：US16496893

申请日：2018-03-27

Applicant: Soitec

Inventor： Jean-Marc Bethoux ,  Yann Sinquin ,  Damien Radisson

IPC: H01L41/253 ,  H03H3/08 ,  H03H9/02 ,  H01L41/08 ,  H01L41/319

Abstract: A method for adjusting the stress state of a piezoelectric film having a first stress state at room temperature includes a step of forming an assembly including a carrier having a thermal expansion coefficient, a compliant layer placed on the carrier, and the piezoelectric film placed on the compliant layer, the piezoelectric film having a thermal expansion coefficient different from that of the carrier. The method also includes a step of heat treating the assembly, in which the assembly is heated to a treatment temperature above the glass transition temperature of the compliant layer. The present disclosure also relates to a process for fabricating an acoustic wave device comprising the piezoelectric layer the stress state of which was adjusted as described herein.

公开(公告)号：US09679777B2

公开(公告)日：2017-06-13

申请号：US14909969

申请日：2014-08-05

Applicant: Soitec

Inventor： Yann Sinquin ,  Jean-Marc Bethoux ,  Oleg Kononchuk

IPC: H01L21/00 ,  H01L21/268 ,  H01L31/0687 ,  H01L21/78 ,  H01L29/20 ,  H01L33/00

CPC classification number: H01L21/268 ,  H01L21/7806 ,  H01L29/20 ,  H01L29/2003 ,  H01L31/06875 ,  H01L33/0079

Abstract: A method for separating a structure from a substrate through electromagnetic irradiations (EI) belonging to a spectral range comprises the steps of a) providing the substrate, b) forming an absorbent separation layer on the substrate, c) forming the structure to be separated on the separation layer, d) exposing the separation layer to the electromagnetic irradiations (EI) via the substrate such that the separation layer breaks down under the effect of the heat stemming from the absorption, the method being notable in that it comprises a step b1) of forming a transparent thermal barrier layer on the separation layer, the exposure period and the thickness of the thermal barrier layer being adapted such that the temperature of the structure to be separated remains below a threshold during the exposure period, beyond which threshold, faults are likely to appear in the structure.

公开(公告)号：US09659777B2

公开(公告)日：2017-05-23

申请号：US14362208

申请日：2012-12-13

Applicant: Soitec

Inventor： Didier Landru ,  Carole David ,  Ionut Radu ,  Lucianna Capello ,  Yann Sinquin

IPC: H01L21/428 ,  H01L21/268 ,  H01L21/02 ,  H01L21/20 ,  H01L21/324

CPC classification number: H01L21/268 ,  H01L21/02354 ,  H01L21/2007 ,  H01L21/324 ,  H01L21/428

Abstract: The invention relates to a process for stabilizing a bonding interface, located within a structure for applications in the fields of electronics, optics and/or optoelectronics and that comprises an oxide layer buried between an active layer and a receiver substrate, the bonding interface having been obtained by molecular adhesion. In accordance with the invention, the process further comprises irradiating this structure with a light energy flux provided by a laser, so that the flux, directed toward the structure, is absorbed by the energy conversion layer and converted to heat in this layer, and in that this heat diffuses into the structure toward the bonding interface, so as to thus stabilize the bonding interface.

公开(公告)号：US11469367B2

公开(公告)日：2022-10-11

申请号：US17043456

申请日：2019-03-22

Applicant: Soitec

Inventor： Jean-Marc Bethoux ,  Guillaume Besnard ,  Yann Sinquin

IPC: H01L21/30 ,  H01L41/335 ,  H01L41/27 ,  H01L41/312 ,  H01L45/00

Abstract: A method for separating a removable composite structure using a light flux includes supplying the removable composite structure, which successively comprises: a substrate that is transparent to the light flux; an optically absorbent layer for at least partially absorbing a light flux; a sacrificial layer adapted to dissociate subject to the application of a temperature higher than a dissociation temperature and made of a material different from that of the optically absorbent layer; and at least one layer to be separated. The method further includes applying a light flux through the substrate, the light flux being at least partly absorbed by the optically absorbent layer, so as to heat the optically absorbent layer; heating the sacrificial layer by thermal conduction from the optically absorbent layer, up to a temperature that is greater than or equal to the dissociation temperature; and dissociating the sacrificial layer under the effect of the heating.

公开(公告)号：US20160189965A1

公开(公告)日：2016-06-30

申请号：US14909969

申请日：2014-08-05

Applicant: SOITEC

Inventor： Yann Sinquin ,  Jean-Marc Bethoux ,  Oleg Kononchuk

IPC: H01L21/268 ,  H01L29/20 ,  H01L21/78

CPC classification number: H01L21/268 ,  H01L21/7806 ,  H01L29/20 ,  H01L29/2003 ,  H01L31/06875 ,  H01L33/0079

Abstract: A method for separating a structure from a substrate through electromagnetic irradiations (EI) belonging to a spectral range comprises the steps of a) providing the substrate, b) forming an absorbent separation layer on the substrate, c) forming the structure to be separated on the separation layer, d) exposing the separation layer to the electromagnetic irradiations (IE) via the substrate such that the separation layer breaks down under the effect of the heat stemming from the absorption, the method being notable in that it comprises a step b1) of forming a transparent thermal barrier layer on the separation layer, the exposure period and the thickness of the thermal barrier layer being adapted such that the temperature of the structure to be separated remains below a threshold during the exposure period, beyond which threshold, faults are likely to appear in the structure.

Abstract translation: 一种通过属于光谱范围的电磁照射（EI）将结构与基板分离的方法包括以下步骤：a）提供基底，b）在基底上形成吸收分离层，c）形成待分离的结构 分离层，d）经由衬底使分离层暴露于电磁照射（IE），使得分离层在吸收引起的热的作用下分解，该方法值得注意的是它包括步骤b1） 在分离层上形成透明热障层，曝光期和热障层的厚度适于使得待分离结构的温度在曝光期间保持在阈值以下，超过该阈值，故障为 可能出现在结构中。

公开(公告)号：US20140357093A1

公开(公告)日：2014-12-04

申请号：US14362208

申请日：2012-12-13

Applicant: Soitec

Inventor： Didier Landru ,  Carole David ,  Ionut Radu ,  Lucianna Capello ,  Yann Sinquin

IPC: H01L21/268 ,  H01L21/324

CPC classification number: H01L21/268 ,  H01L21/02354 ,  H01L21/2007 ,  H01L21/324 ,  H01L21/428

Abstract: The invention relates to a process for stabilizing a bonding interface, located within a structure for applications in the fields of electronics, optics and/or optoelectronics and that comprises an oxide layer buried between an active layer and a receiver substrate, the bonding interface having been obtained by molecular adhesion. In accordance with the invention, the process further comprises irradiating this structure with a light energy flux provided by a laser, so that the flux, directed toward the structure, is absorbed by the energy conversion layer and converted to heat in this layer, and in that this heat diffuses into the structure toward the bonding interface, so as to thus stabilize the bonding interface.

Abstract translation: 本发明涉及一种用于稳定接合界面的方法，该接合界面位于用于电子学，光学和/或光电子学领域的结构内，并且包括掩埋在有源层和接收器衬底之间的氧化物层，所述接合界面已被 通过分子粘附获得。 根据本发明，该方法还包括用激光提供的光能通量照射该结构，使得朝向结构的通量被能量转换层吸收并在该层中被转换成热 这种热量向结合界面扩散到结构中，从而稳定接合界面。

公开(公告)号：US12033854B2

公开(公告)日：2024-07-09

申请号：US17632021

申请日：2020-07-02

Applicant: Soitec

Inventor： Yann Sinquin ,  Jean-Marc Bethoux ,  Damien Radisson

IPC: H01L21/02

CPC classification number: H01L21/02529 ,  H01L21/02032 ,  H01L21/02378 ,  H01L21/0243 ,  H01L21/02447 ,  H01L21/02502

Abstract: A method for producing a composite silicon carbide structure comprises:



providing an initial substrate of monocrystalline silicon carbide;
depositing an intermediate layer of polycrystalline silicon carbide at a temperature higher than 1000° C. on the initial substrate, the intermediate layer having a thickness greater than or equal to 1.5 microns;
implanting light ionic species through the intermediate layer to form a buried brittle plane in the initial substrate, delimiting the thin layer between the buried brittle plane and the intermediate layer, and
depositing an additional layer of polycrystalline silicon carbide at a temperature higher than 1000° C. on the intermediate layer, the intermediate layer and the additional layer forming a carrier substrate, and separating the buried brittle plane during the deposition of the additional layer.

公开(公告)号：US11462676B2

公开(公告)日：2022-10-04

申请号：US16496893

申请日：2018-03-27

Applicant: Soitec

Inventor： Jean-Marc Bethoux ,  Yann Sinquin ,  Damien Radisson

IPC: H01L41/253 ,  H01L41/08 ,  H01L41/319 ,  H03H3/08 ,  H03H9/02

Abstract: A method for adjusting the stress state of a piezoelectric film having a first stress state at room temperature includes a step of forming an assembly including a carrier having a thermal expansion coefficient, a compliant layer placed on the carrier, and the piezoelectric film placed on the compliant layer, the piezoelectric film having a thermal expansion coefficient different from that of the carrier. The method also includes a step of heat treating the assembly, in which the assembly is heated to a treatment temperature above the glass transition temperature of the compliant layer. The present disclosure also relates to a process for fabricating an acoustic wave device comprising the piezoelectric layer the stress state of which was adjusted as described herein.

公开(公告)号：US20220270875A1

公开(公告)日：2022-08-25

申请号：US17632021

申请日：2020-07-02

Applicant: Soitec

Inventor： Yann Sinquin ,  Jean-Marc Bethoux ,  Damien Radisson

IPC: H01L21/02

Abstract: A method for producing a composite silicon carbide structure comprises: providing an initial substrate of monocrystalline silicon carbide; depositing an intermediate layer of polycrystalline silicon carbide at a temperature higher than 1000° C. on the initial substrate, the intermediate layer having a thickness greater than or equal to 1.5 microns; implanting light ionic species through the intermediate layer to form a buried brittle plane in the initial substrate, delimiting the thin layer between the buried brittle plane and the intermediate layer, and depositing an additional layer of polycrystalline silicon carbide at a temperature higher than 1000° C. on the intermediate layer, the intermediate layer and the additional layer forming a carrier substrate, and separating the buried brittle plane during the deposition of the additional layer.