公开(公告)号：US11557715B2

公开(公告)日：2023-01-17

申请号：US16759992

申请日：2018-10-31

Applicant: Soitec

Inventor： Bruno Ghyselen ,  Jean-Marc Bethoux

IPC: H01L41/313 ,  H01L21/265 ,  H01L41/187

Abstract: A method for manufacturing a film, notably monocrystalline, on a flexible sheet, comprises the following steps: providing a donor substrate, forming an embrittlement zone in the donor substrate so as to delimit the film, forming the flexible sheet by deposition over the surface of the film, and detaching the donor substrate along the embrittlement zone so as to transfer the film onto the flexible sheet.

公开(公告)号：US11101428B2

公开(公告)日：2021-08-24

申请号：US16064416

申请日：2016-12-21

Applicant: Soitec

Inventor： Bruno Ghyselen ,  Jean-Marc Bethoux

IPC: H01L41/39 ,  H01L41/319 ,  H01L41/187 ,  C30B29/22 ,  C30B25/18 ,  H01L41/312 ,  H01L21/762 ,  C30B29/30 ,  H03H9/02 ,  H03H9/54 ,  H03H9/64 ,  H01L41/316

Abstract: A method of manufacturing a monocrystalline layer, comprises the following successive steps: providing a donor substrate comprising a piezoelectric material of composition ABO3, where A consists of at least one element from among Li, Na, K, H, Ca; and B consists of at least one element from among Nb, Ta, Sb, V; providing a receiver substrate, transferring a layer called the “seed layer” from the donor substrate on to the receiver substrate, such that the seed layer is at the bonding interface, followed by thinning of the donor substrate layer; and growing a monocrystalline layer of composition A′B′O3 on piezoelectric material ABO3 of the seed layer where A′ consists of a least one of the following elements Li, Na, K, H; B′ consists of a least one of the following elements Nb, Ta, Sb, V; and A′ is different from A or B′ is different from B.

公开(公告)号：US20190228967A1

公开(公告)日：2019-07-25

申请号：US16337206

申请日：2017-09-21

Applicant: Soitec

Inventor： David Sotta ,  Jean-Marc Bethoux ,  Oleg Kononchuk

IPC: H01L21/02

Abstract: A structure that can be used to manufacture at least one active layer made of a III-V material thereon includes a substrate comprising a carrier having a main face, a dielectric layer located on the main face of the carrier, and a plurality of single-crystal semiconductor islands located directly on the dielectric layer. The islands have an upper surface in order to serve as a seed surface for the growth of the active layer. The structure further comprises a seed layer located between the single-crystal semiconductor islands, directly on the portion of the dielectric layer that is not covered by the islands, without masking the upper surface of the islands, so that the dielectric layer is not exposed to the external environment.

公开(公告)号：US20190006577A1

公开(公告)日：2019-01-03

申请号：US16064420

申请日：2016-12-21

Applicant: Soitec

Inventor： Bruno Ghyselen ,  Ionut Radu ,  Jean-Marc Bethoux

IPC: H01L41/187 ,  C30B29/22 ,  C30B25/18 ,  H01L41/08 ,  H01L41/09 ,  H01L41/113 ,  H01L41/319 ,  H01L41/335 ,  H03H3/02 ,  H03H3/08 ,  H03H9/02 ,  H03H9/17 ,  H03H9/19 ,  H03H9/54 ,  H03H9/25 ,  H03H9/64

Abstract: A method of fabricating a monocrystalline piezoelectric layer, wherein the method comprises: supplying a donor substrate of the piezoelectric material, supplying a receiving substrate, transferring a layer called a “seed layer” from the donor substrate onto the receiving substrate, and implementing an epitaxy of the piezoelectric material on the seed layer until a required thickness for the monocrystalline piezoelectric layer is obtained.

公开(公告)号：US20180375014A1

公开(公告)日：2018-12-27

申请号：US16064416

申请日：2016-12-21

Applicant: Soitec

Inventor： Bruno Ghyselen ,  Jean-Marc Bethoux

IPC: H01L41/39 ,  C30B29/30 ,  H01L41/187 ,  H03H9/02 ,  H03H9/54 ,  H03H9/64 ,  H01L41/319

Abstract: A method of manufacturing a monocrystalline layer comprises the following successive steps: providing a donor substrate comprising a piezoelectric material of composition ABO3, where A consists of at least one element from among Li, Na, K, H, Ca; and B consists of at least one element from among Nb, Ta, Sb, V; providing a receiver substrate, transferring a layer called the “seed layer” from the donor substrate on to the receiver substrate, such that the seed layer is at the bonding interface, followed by thinning of the donor substrate layer; and growing a monocrystalline layer of composition A′B′O3 on piezoelectric material ABO3 of the seed layer where A′ consists of a least one of the following elements Li, Na, K, H; B′ consists of a least one of the following elements Nb, Ta, Sb, V; and A′ is different from A or B′ is different from B.

公开(公告)号：US12040424B2

公开(公告)日：2024-07-16

申请号：US17416854

申请日：2019-11-29

Applicant: Soitec

Inventor： Jean-Marc Bethoux ,  Mariia Rozhavskaia

IPC: H01L33/00 ,  H01L33/12 ,  H01L33/18

CPC classification number: H01L33/0075 ,  H01L33/12 ,  H01L33/18

Abstract: A process for fabricating a growth substrate comprises preparing a donor substrate by forming a crystalline semiconductor surface layer on a seed layer of a carrier. This preparation comprises forming the surface layer as a plurality of alternations of an InGaN primary layer and of an AlGaN secondary layer, the indium concentration and the thickness of the primary layers and the aluminum concentration and the thickness of the secondary layers being selected so that a homogeneous AlInGaN layer that is equivalent, in terms of concentration of aluminum and indium, to the surface layer has a natural lattice parameter different from the lattice parameter of the seed layer.

公开(公告)号：US20230416940A1

公开(公告)日：2023-12-28

申请号：US18461226

申请日：2023-09-05

Applicant: Soitec

Inventor： Bruno Ghyselen ,  Jean-Marc Bethoux

IPC: C30B25/18 ,  C30B29/02 ,  C30B29/66

CPC classification number: C30B25/186 ,  C30B29/02 ,  C30B29/66

Abstract: A process for manufacturing a two-dimensional film of a group IV material having a hexagonal crystalline structure, in particular, graphene, comprises formation of a growth substrate, comprising the transfer of a single-crystal metal film suitable for the growth of the two-dimensional film on a support substrate, and epitaxial growth of the two-dimensional film on the metal film of the substrate.

公开(公告)号：US20230217832A1

公开(公告)日：2023-07-06

申请号：US18179071

申请日：2023-03-06

Applicant: Soitec

Inventor： Bruno Ghyselen ,  Ionut Radu ,  Jean-Marc Bethoux

IPC: H10N30/853 ,  C30B25/18 ,  C30B29/22 ,  H10N30/20 ,  H10N30/072 ,  H10N30/079 ,  H10N30/085 ,  H10N30/00 ,  H03H3/02 ,  H03H3/08 ,  H03H9/25 ,  H03H9/54 ,  H03H9/64

CPC classification number: H10N30/8542 ,  C30B25/186 ,  C30B29/22 ,  H10N30/20 ,  H10N30/072 ,  H10N30/079 ,  H10N30/085 ,  H10N30/10516 ,  H03H3/02 ,  H03H3/08 ,  H03H9/25 ,  H03H9/54 ,  H03H9/64 ,  C30B29/30

Abstract: A composite substrate includes a final substrate, and a piezoelectric material directly molecularly bonded to the final substrate at a first interface. The piezoelectric material comprises an epitaxial layer, but does not comprise a seed layer. Additional composite substrates include a final substrate, and a piezoelectric material directly molecularly bonded to the final substrate at a first interface. The piezoelectric material comprises an epitaxial layer. The composite substrate further includes a seed layer on which the piezoelectric material has been epitaxially grown. The seed layer is disposed on a side of the epitaxial layer opposite the final substrate. An acoustic wave device comprises such a composite substrate with at least one electrode on a surface of the piezoelectric layer opposite the substrate.

公开(公告)号：US11373897B2

公开(公告)日：2022-06-28

申请号：US16759990

申请日：2018-10-31

Applicant: Soitec

Inventor： Bruno Ghyselen ,  Jean-Marc Bethoux

IPC: H01L21/762 ,  H01L41/313

Abstract: A method for manufacturing a film on a support having a non-flat surface comprises: providing a donor substrate having a non-flat surface, forming an embrittlement zone in the donor substrate so as to delimit the film to be transferred, forming the support by deposition on the non-flat surface of the film to be transferred, and detaching the donor substrate along the embrittlement zone, so as to transfer the film onto the support.

公开(公告)号：US11295950B2

公开(公告)日：2022-04-05

申请号：US16337206

申请日：2017-09-21

Applicant: Soitec

Inventor： David Sotta ,  Jean-Marc Bethoux ,  Oleg Kononchuk

IPC: H01L21/02

Abstract: A structure that can be used to manufacture at least one active layer made of a III-V material thereon includes a substrate comprising a carrier having a main face, a dielectric layer located on the main face of the carrier, and a plurality of single-crystal semiconductor islands located directly on the dielectric layer. The islands have an upper surface in order to serve as a seed surface for the growth of the active layer. The structure further comprises a seed layer located between the single-crystal semiconductor islands, directly on the portion of the dielectric layer that is not covered by the islands, without masking the upper surface of the islands, so that the dielectric layer is not exposed to the external environment.