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公开(公告)号：US20130208747A1
公开(公告)日：2013-08-15
申请号：US13765375
申请日：2013-02-12
发明人： Kunihiko Tasai , Hiroshi Nakajima , Noriyuki Futagawa , Katsunori Yanashima , Yohei Enya , Tetsuya Kumano , Takashi Kyono
IPC分类号： H01S5/30
CPC分类号： H01S5/3013 , B82Y20/00 , H01S5/0014 , H01S5/0035 , H01S5/2031 , H01S5/3202 , H01S5/3211 , H01S5/3213 , H01S5/34333
摘要： A semiconductor device includes: a semiconductor substrate made of a hexagonal Group III nitride semiconductor and having a semi-polar plane; and an epitaxial layer formed on the semi-polar plane of the semiconductor substrate and including a first cladding layer of a first conductive type, a second cladding layer of a second conductive type, and a light-emitting layer formed between the first cladding layer and the second cladding layer, the first cladding layer being made of Inx1Aly1Ga1-x1-y1N, where x1>0 and y1>0, the second cladding layer being made of Inx2Aly2Ga1-x2-y2N, where0≦x2≦about 0.02 and about 0.03≦y2≦about 0.07.
摘要翻译： 半导体器件包括：由六方晶III族氮化物半导体制成并具有半极性平面的半导体衬底; 以及形成在半导体衬底的半极性平面上的外延层，包括第一导电类型的第一包层，第二导电类型的第二包层和形成在第一包层和第二包层之间的发光层 第二包层由Inx1Aly1Ga1-x1-y1N制成，其中x1> 0和y1> 0，第二包层由Inx2Aly2Ga1-x2-y2N制成，其中@ @ @约0.02和约0.03 @ y2 @约0.07。
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公开(公告)号：US08891568B2
公开(公告)日：2014-11-18
申请号：US13707911
申请日：2012-12-07
CPC分类号： H01S5/2206 , B82Y20/00 , H01S5/0425 , H01S5/2009 , H01S5/22 , H01S5/3202 , H01S5/34333 , H01S2301/176
摘要： A laser diode device includes: a semiconductor substrate including a semi-polar surface, the semiconductor substrate being formed of a hexagonal III-nitride semiconductor; an epitaxial layer including a light emitting layer, the epitaxial layer being formed on the semi-polar surface of the semiconductor substrate, and the epitaxial layer including a ridge section; a first electrode formed on a top surface of the ridge section; an insulating layer covering the epitaxial layer in an adjacent region of the ridge section and a side surface of the ridge section, the insulating layer covering part or all of side surfaces of the first electrode continuously from the epitaxial layer; a pad electrode formed to cover a top surface of the first electrode and the insulating layer, the pad electrode being electrically connected to the first electrode; and a second electrode formed on a surface, of the semiconductor substrate, opposite to the semi-polar surface.
摘要翻译： 激光二极管装置包括：包括半极性表面的半导体衬底，所述半导体衬底由六边形III族氮化物半导体形成; 包括发光层的外延层，所述外延层形成在所述半导体衬底的半极性表面上，所述外延层包括脊部; 形成在所述脊部的上表面上的第一电极; 覆盖所述脊部的相邻区域中的所述外延层的绝缘层和所述脊部的侧面，所述绝缘层从所述外延层连续地覆盖所述第一电极的一部分或全部所述侧面; 形成为覆盖所述第一电极和所述绝缘层的顶表面的焊盘电极，所述焊盘电极与所述第一电极电连接; 以及形成在所述半导体衬底的与所述半极性表面相对的表面上的第二电极。
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公开(公告)号：US08731016B2
公开(公告)日：2014-05-20
申请号：US13658239
申请日：2012-10-23
发明人： Takashi Kyono , Yohei Enya , Masaki Ueno , Katsunori Yanashima , Kunihiko Tasai , Hiroshi Nakajima , Noriyuki Futagawa
IPC分类号： H01S5/00
CPC分类号： H01S5/3013 , B82Y20/00 , H01S5/2009 , H01S5/2031 , H01S5/22 , H01S5/3063 , H01S5/3202 , H01S5/3213 , H01S5/3215 , H01S5/3403 , H01S5/3407 , H01S5/34333
摘要： A nitride semiconductor light-emitting device has a semiconductor ridge, and includes a first inner-layer between an active layer and an n-type cladding and a second inner-semiconductor layer between the active layer and a p-type cladding. The first inner-layer, active layer and second inner-layer constitute a core-region. The n-type cladding, core-region and p-type cladding constitute a waveguide-structure. The active layer and the first inner-layer constitute a first heterojunction inclined at an angle greater than zero with respect to a reference plane of the c-plane of the nitride semiconductor of the n-type cladding. Piezoelectric polarization of the well layer is oriented in a direction from the p-type cladding toward the n-type cladding. The second inner-layer and InGaN well layer constitute a second heterojunction. A distance between the ridge bottom and the second heterojunction is 200 nm or less. The ridge includes a third heterojunction between the second inner-layer and the p-type cladding.
摘要翻译： 氮化物半导体发光器件具有半导体脊，并且包括在有源层和n型包层之间的第一内层和在有源层和p型包层之间的第二内部半导体层。 第一内层，活性层和第二内层构成核心区域。 n型包层，芯区和p型包层构成波导结构。 有源层和第一内层构成相对于n型包层的氮化物半导体的c面的参考平面以大于零的角度倾斜的第一异质结。 阱层的压电极化在从p型包层朝向n型包层的方向上取向。 第二内层和InGaN阱层构成第二异质结。 脊底与第二异质结之间的距离为200nm以下。 脊包括在第二内层和p型包层之间的第三异质结。
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公开(公告)号：US20130156060A1
公开(公告)日：2013-06-20
申请号：US13707911
申请日：2012-12-07
IPC分类号： H01S5/22
CPC分类号： H01S5/2206 , B82Y20/00 , H01S5/0425 , H01S5/2009 , H01S5/22 , H01S5/3202 , H01S5/34333 , H01S2301/176
摘要： A laser diode device includes: a semiconductor substrate including a semi-polar surface, the semiconductor substrate being formed of a hexagonal III-nitride semiconductor; an epitaxial layer including a light emitting layer, the epitaxial layer being formed on the semi-polar surface of the semiconductor substrate, and the epitaxial layer including a ridge section; a first electrode formed on a top surface of the ridge section; an insulating layer covering the epitaxial layer in an adjacent region of the ridge section and a side surface of the ridge section, the insulating layer covering part or all of side surfaces of the first electrode continuously from the epitaxial layer; a pad electrode formed to cover a top surface of the first electrode and the insulating layer, the pad electrode being electrically connected to the first electrode; and a second electrode formed on a surface, of the semiconductor substrate, opposite to the semi-polar surface.
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公开(公告)号：US09231375B2
公开(公告)日：2016-01-05
申请号：US13765375
申请日：2013-02-12
发明人： Kunihiko Tasai , Hiroshi Nakajima , Noriyuki Futagawa , Katsunori Yanashima , Yohei Enya , Tetsuya Kumano , Takashi Kyono
CPC分类号： H01S5/3013 , B82Y20/00 , H01S5/0014 , H01S5/0035 , H01S5/2031 , H01S5/3202 , H01S5/3211 , H01S5/3213 , H01S5/34333
摘要： A semiconductor device includes: a semiconductor substrate made of a hexagonal Group III nitride semiconductor and having a semi-polar plane; and an epitaxial layer formed on the semi-polar plane of the semiconductor substrate and including a first cladding layer of a first conductive type, a second cladding layer of a second conductive type, and a light-emitting layer formed between the first cladding layer and the second cladding layer, the first cladding layer being made of Inx1Aly1Ga1-x1-y1N, where x1>0 and y1>0, the second cladding layer being made of Inx2Aly2Ga1-x2-y2N, where0≦x2≦about 0.02 and about 0.03≦y2≦about 0.07.
摘要翻译： 半导体器件包括：由六方晶III族氮化物半导体制成并具有半极性平面的半导体衬底; 以及形成在半导体衬底的半极性平面上的外延层，包括第一导电类型的第一包层，第二导电类型的第二包层和形成在第一包层和第二包层之间的发光层 第二包层由In x Al 1 Ga 1-x1-y 1 N制成，其中x1> 0和y1> 0，第二包层由Inx2Aly2Ga1-x2-y2N制成，其中0＆nlE; x2＆nlE;约0.02和约0.03＆ ; y2＆nlE;约0.07。
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公开(公告)号：US10109984B2
公开(公告)日：2018-10-23
申请号：US15535142
申请日：2015-10-02
申请人： SONY CORPORATION
摘要： Provided is an optical semiconductor device including a laminate structural body 20 in which an n-type compound semiconductor layer 21, an active layer 23, and a p-type compound semiconductor layer 22 are laminated in this order. The active layer 23 includes a multiquantum well structure including a tunnel barrier layer 33, and a compositional variation of a well layer 312 adjacent to the p-type compound semiconductor layer 22 is greater than a compositional variation of another well layer 311. Band gap energy of the well layer 312 adjacent to the p-type compound semiconductor layer 22 is smaller than band gap energy of the other well layer 311. A thickness of the well layer 312 adjacent to the p-type compound semiconductor layer 22 is greater than a thickness of the other well layer 311.
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公开(公告)号：US09407067B2
公开(公告)日：2016-08-02
申请号：US14449840
申请日：2014-08-01
申请人： Sony Corporation
CPC分类号： H01S5/3013 , H01S5/0215 , H01S5/0216 , H01S5/0217 , H01S5/183 , H01S5/18311 , H01S5/18341 , H01S5/18361 , H01S5/18369 , H01S5/18388 , H01S5/18391 , H01S5/34333 , H01S2304/12
摘要： A method of manufacturing a light emitting element includes, sequentially (a) forming a first light reflecting layer having a convex shape; (b) forming a layered structure body by layering a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; (c) forming, on the second surface of the second compound semiconductor layer, a second electrode and a second light reflecting layer formed from a multilayer film; (d) fixing the second light reflecting layer to a support substrate; (e) removing the substrate for manufacturing a light emitting element, and exposing the first surface of the first compound semiconductor layer and the first light reflecting layer; (f) etching the first surface of the first compound semiconductor layer; and (g) forming a first electrode on at least the etched first surface of the first compound semiconductor layer.
摘要翻译： 制造发光元件的方法包括：顺序地（a）形成具有凸形的第一光反射层; （b）通过层叠第一化合物半导体层，有源层和第二化合物半导体层来形成层状结构体; （c）在第二化合物半导体层的第二表面上形成由多层膜形成的第二电极和第二光反射层; （d）将第二光反射层固定在支撑基板上; （e）去除用于制造发光元件的衬底，并且暴露第一化合物半导体层和第一光反射层的第一表面; （f）蚀刻第一化合物半导体层的第一表面; 和（g）在所述第一化合物半导体层的至少蚀刻的第一表面上形成第一电极。
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公开(公告)号：US20150043606A1
公开(公告)日：2015-02-12
申请号：US14449888
申请日：2014-08-01
申请人： Sony Corporation
CPC分类号： H01S5/183 , H01S5/0216 , H01S5/0217 , H01S5/0425 , H01S5/18311 , H01S5/18341 , H01S5/18361 , H01S5/18369 , H01S5/18388 , H01S5/18391 , H01S5/187 , H01S5/34333 , H01S2304/12
摘要： Light emitting elements, and methods of producing the same, the light emitting elements including: a laminated structure, the laminated structure including a first compound semiconductor layer that includes a first surface and a second surface facing the first surface, an active layer that is in contact with the second surface of the first compound semiconductor layer, and a second compound semiconductor layer; where the first surface of the first compound semiconductor layer has a first surface area and a second surface area, the first and second surface areas being different in at least one of a height or a roughness, a first light reflection layer is formed on at least a portion of the first surface area, and a first electrode is formed on at least a portion of the second surface area.
摘要翻译： 发光元件及其制造方法，所述发光元件包括：层叠结构，所述层叠结构体包括第一化合物半导体层，所述第一化合物半导体层包括第一表面和与所述第一表面相对的第二表面，所述活性层位于 与第一化合物半导体层的第二表面接触，和第二化合物半导体层; 其中第一化合物半导体层的第一表面具有第一表面区域和第二表面区域，第一和第二表面区域在高度或粗糙度中的至少一个方面不同，至少形成第一光反射层 第一表面区域的一部分和第一电极形成在第二表面区域的至少一部分上。
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公开(公告)号：US11489314B2
公开(公告)日：2022-11-01
申请号：US17127383
申请日：2020-12-18
申请人： Sony Corporation
发明人： Susumu Sato , Tatsushi Hamaguchi , Shoichiro Izumi , Noriyuki Futagawa , Masamichi Ito , Jugo Mitomo , Hiroshi Nakajima
摘要： A light-emitting element includes: a laminated structure body 20 which is formed from a GaN-based compound semiconductor and in which a first compound semiconductor layer 21 including a first surface 21a and a second surface 21b that is opposed to the first surface 21a, an active layer 23 that faces the second surface 21b of the first compound semiconductor layer 21, and a second compound semiconductor layer 22 including a first surface 22a that faces the active layer 23 and a second surface 22b that is opposed to the first surface 22a are laminated; a first light reflection layer 41 that is provided on the first surface 21a side of the first compound semiconductor layer 21; and a second light reflection layer 42 that is provided on the second surface 22b side of the second compound semiconductor layer 22. The first light reflection layer 41 includes a concave mirror portion 43, and the second light reflection layer 42 has a flat shape.
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公开(公告)号：US10826275B2
公开(公告)日：2020-11-03
申请号：US16323134
申请日：2017-06-13
申请人： SONY CORPORATION
摘要： A light emitting element includes a laminated structure formed by laminating a first light reflecting layer 41, a light emitting structure 20, and a second light reflecting layer 42. The light emitting structure 20 is formed by laminating, from the first light reflecting layer side, a first compound semiconductor layer 21, an active layer 23, and a second compound semiconductor layer 22. In the laminated structure 20, at least two light absorbing material layers 51 are formed in parallel to a virtual plane occupied by the active layer 23.
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