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    SEMICONDUCTOR DEVICE
    2.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20130208747A1

    公开(公告)日：2013-08-15

    申请号：US13765375

    申请日：2013-02-12

    Applicant: Sony Corporation ,  Sumitomo Electric Industries, Ltd.

    Inventor： Kunihiko Tasai ,  Hiroshi Nakajima ,  Noriyuki Futagawa ,  Katsunori Yanashima ,  Yohei Enya ,  Tetsuya Kumano ,  Takashi Kyono

    IPC: H01S5/30

    CPC classification number: H01S5/3013 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/0035 ,  H01S5/2031 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/3213 ,  H01S5/34333

    Abstract: A semiconductor device includes: a semiconductor substrate made of a hexagonal Group III nitride semiconductor and having a semi-polar plane; and an epitaxial layer formed on the semi-polar plane of the semiconductor substrate and including a first cladding layer of a first conductive type, a second cladding layer of a second conductive type, and a light-emitting layer formed between the first cladding layer and the second cladding layer, the first cladding layer being made of Inx1Aly1Ga1-x1-y1N, where x1>0 and y1>0, the second cladding layer being made of Inx2Aly2Ga1-x2-y2N, where0≦x2≦about 0.02 and about 0.03≦y2≦about 0.07.

    Abstract translation: 半导体器件包括：由六方晶III族氮化物半导体制成并具有半极性平面的半导体衬底; 以及形成在半导体衬底的半极性平面上的外延层，包括第一导电类型的第一包层，第二导电类型的第二包层和形成在第一包层和第二包层之间的发光层 第二包层由Inx1Aly1Ga1-x1-y1N制成，其中x1> 0和y1> 0，第二包层由Inx2Aly2Ga1-x2-y2N制成，其中@ @ @约0.02和约0.03 @ y2 @约0.07。

    Nitride semiconductor light emitting device
    3.
    发明授权
    Nitride semiconductor light emitting device 有权
    氮化物半导体发光器件

    公开(公告)号：US08731016B2

    公开(公告)日：2014-05-20

    申请号：US13658239

    申请日：2012-10-23

    Applicant: Sumitomo Electric Industries, Ltd. ,  Sony Corporation

    Inventor： Takashi Kyono ,  Yohei Enya ,  Masaki Ueno ,  Katsunori Yanashima ,  Kunihiko Tasai ,  Hiroshi Nakajima ,  Noriyuki Futagawa

    IPC: H01S5/00

    CPC classification number: H01S5/3013 ,  B82Y20/00 ,  H01S5/2009 ,  H01S5/2031 ,  H01S5/22 ,  H01S5/3063 ,  H01S5/3202 ,  H01S5/3213 ,  H01S5/3215 ,  H01S5/3403 ,  H01S5/3407 ,  H01S5/34333

    Abstract: A nitride semiconductor light-emitting device has a semiconductor ridge, and includes a first inner-layer between an active layer and an n-type cladding and a second inner-semiconductor layer between the active layer and a p-type cladding. The first inner-layer, active layer and second inner-layer constitute a core-region. The n-type cladding, core-region and p-type cladding constitute a waveguide-structure. The active layer and the first inner-layer constitute a first heterojunction inclined at an angle greater than zero with respect to a reference plane of the c-plane of the nitride semiconductor of the n-type cladding. Piezoelectric polarization of the well layer is oriented in a direction from the p-type cladding toward the n-type cladding. The second inner-layer and InGaN well layer constitute a second heterojunction. A distance between the ridge bottom and the second heterojunction is 200 nm or less. The ridge includes a third heterojunction between the second inner-layer and the p-type cladding.

    Abstract translation: 氮化物半导体发光器件具有半导体脊，并且包括在有源层和n型包层之间的第一内层和在有源层和p型包层之间的第二内部半导体层。 第一内层，活性层和第二内层构成核心区域。 n型包层，芯区和p型包层构成波导结构。 有源层和第一内层构成相对于n型包层的氮化物半导体的c面的参考平面以大于零的角度倾斜的第一异质结。 阱层的压电极化在从p型包层朝向n型包层的方向上取向。 第二内层和InGaN阱层构成第二异质结。 脊底与第二异质结之间的距离为200nm以下。 脊包括在第二内层和p型包层之间的第三异质结。

    Nitride semiconductor laser, epitaxial substrate
    5.
    发明授权
    Nitride semiconductor laser, epitaxial substrate 有权
    氮化物半导体激光器，外延衬底

    公开(公告)号：US08923354B2

    公开(公告)日：2014-12-30

    申请号：US13644478

    申请日：2012-10-04

    Applicant: Sumitomo Electric Industries, Ltd. ,  Sony Corporation

    Inventor： Takashi Kyono ,  Yohei Enya ,  Takamichi Sumitomo ,  Yusuke Yoshizumi ,  Masaki Ueno ,  Katsunori Yanashima ,  Kunihiko Tasai ,  Hiroshi Nakajima

    IPC: H01S5/00 ,  H01S5/30 ,  H01S5/32 ,  H01S5/343 ,  H01L21/02 ,  H01S5/22 ,  H01S5/20

    CPC classification number: H01S5/30 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01S5/2031 ,  H01S5/22 ,  H01S5/3063 ,  H01S5/3201 ,  H01S5/3202 ,  H01S5/3213 ,  H01S5/34333 ,  H01S2304/04

    Abstract: A nitride semiconductor laser comprises a conductive support base having a primary surface of gallium nitride based semiconductor, an active layer on the primary surface, and a p-type cladding region on the primary surface. The primary surface is tilted to a reference plane perpendicular to a reference axis extending in the c-axis direction of the gallium nitride based semiconductor. The p-type cladding region comprises a first p-type group III nitride semiconductor layer of an AlGaN layer anisotropically-strained, and a second p-type group III nitride semiconductor layer of material different from the AlGaN layer. The first p-type group III nitride semiconductor layer is provided between the second p-type group III nitride semiconductor layer and the active layer. The AlGaN layer has the largest bandgap in the p-type cladding region. The second p-type group III nitride semiconductor layer has a resistivity lower than the first p-type group III nitride semiconductor layer.

    Abstract translation: 氮化物半导体激光器包括具有氮化镓基半导体的主表面的导电支撑基底，主表面上的有源层和主表面上的p型包层区域。 主表面倾斜到垂直于在氮化镓基半导体的c轴方向上延伸的参考轴的参考平面。 p型包层区包括各向异性应变的AlGaN层的第一p型III族氮化物半导体层和与AlGaN层不同的材料的第二p型III族氮化物半导体层。 第一p型III族氮化物半导体层设置在第二p型III族氮化物半导体层和有源层之间。 AlGaN层在p型包层区域具有最大的带隙。 第二p型III族氮化物半导体层的电阻率低于第一p型III族氮化物半导体层。

    Mirror driving mechanism and optical module
    6.
    发明授权
    Mirror driving mechanism and optical module 有权

    公开(公告)号：US11609423B2

    公开(公告)日：2023-03-21

    申请号：US16627883

    申请日：2019-03-19

    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

    Inventor： Yohei Enya ,  Shinya Ito ,  Takashi Kyono

    IPC: G02B26/10 ,  G02B26/08 ,  G02B27/09 ,  H01S5/022

    Abstract: A mirror driving mechanism includes a plate-shaped base portion, a mirror that is installed at the base portion, and a temperature detecting section that is installed at the base portion and that detects a temperature of the base portion. The base portion includes a thin portion that is disposed away from an outer edge of the base portion and that has a through hole extending through the base portion in a plate-thickness direction of the base portion, a thick portion that is connected to the thin portion, that is thicker than the thin portion in the plate-thickness direction of the base portion, and that extends along the outer edge so as to surround the thin portion, and a first shaft portion extends into the through hole from an outer periphery of the through hole.

    OPTICAL MODULE
    7.
    发明申请
    OPTICAL MODULE 审中-公开

    公开(公告)号：US20190326726A1

    公开(公告)日：2019-10-24

    申请号：US16472564

    申请日：2017-10-27

    Applicant: Sumitomo Electric Industries, Ltd.

    Inventor： Yohei Enya ,  Hiromi Nakanishi

    IPC: H01S5/024

    Abstract: An optical module includes a first base member, a second base member disposed spatially away from the first base member, a first laser disposed on the first base member and configured to emit red light, a second laser disposed on the second base member and configured to emit light with a color other than red, and a first electronic cooling module disposed in contact with the first base member and configured to adjust a temperature of the first laser.

    Optical module that suppresses stray light
    9.
    发明授权
    Optical module that suppresses stray light 有权

    公开(公告)号：US09977201B2

    公开(公告)日：2018-05-22

    申请号：US15647491

    申请日：2017-07-12

    Applicant: Sumitomo Electric Industries, Ltd.

    Inventor： Yohei Enya ,  Hiromi Nakanishi ,  Kuniaki Ishihara

    IPC: G02B6/42 ,  G02B6/293 ,  F21S8/10

    CPC classification number: G02B6/4246 ,  F21S41/147 ,  G02B6/29346 ,  G02B6/2938 ,  G02B6/4206 ,  G02B6/4209 ,  G02B6/4215

    Abstract: An optical module includes a light-forming part and a protective member. The light-forming part includes a base member, a semiconductor light-emitting device, a lens, and a light-receiving device mounted on the base member and disposed, in the emission direction of the semiconductor light-emitting device, between the semiconductor light-emitting device and the lens. The light-receiving surface of the light-receiving device inclines toward the emission portion of the semiconductor light-emitting device such that an inclination angle θ is more than 0° and 90° or less, the inclination angle θ being an angle formed between the optical axis of the semiconductor light-emitting device and a plane including the light-receiving surface of the light-receiving device.

    Optical module
    10.
    发明授权
    Optical module 有权

    公开(公告)号：US12222493B2

    公开(公告)日：2025-02-11

    申请号：US17601709

    申请日：2019-12-19

    Applicant: Sumitomo Electric Industries, Ltd.

    Inventor： Shinya Ito ,  Yohei Enya ,  Takashi Kyono ,  Hiromi Nakanishi

    IPC: G02B26/10 ,  G02B26/08 ,  H01S5/022 ,  H01S5/02315

    Abstract: An optical module includes a light-forming unit configured to form light, and a protective member surrounding and sealing the light-forming unit. The light-forming unit includes a laser diode, a first MEMS including a first mirror having a first reflective surface that reflects and scans light from the laser diode, the first mirror oscillating to form a first plane, and a second MEMS including a second mirror having a second reflective surface that reflects and scans light from the first mirror, the second mirror oscillating to form a second plane orthogonal to the first plane.

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