公开(公告)号：US20150132926A1

公开(公告)日：2015-05-14

申请号：US14599335

申请日：2015-01-16

Applicant: SORAA, INC.

Inventor： MARK P. D'EVELYN ,  DIRK EHRENTRAUT ,  DERRICK S. KAMBER ,  BRADLEY C. DOWNEY

IPC: C30B7/10 ,  H01L21/02 ,  C30B29/40

CPC classification number: C30B7/105 ,  B01J3/008 ,  B01J3/042 ,  B01J3/065 ,  B01J2203/0665 ,  B01J2203/068 ,  B30B11/002 ,  C30B29/406 ,  H01L21/02035 ,  H01L21/02389

Abstract: Large-scale manufacturing of gallium nitride boules using m-plane or wedge-shaped seed crystals can be accomplished using ammonothermal growth methods. Large-area single crystal seed plates are suspended in a rack, placed in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and crystals are grown ammonothermally. The orientation of the m-plane or wedge-shaped seed crystals are chosen to provide efficient utilization of the seed plates and of the volume inside the autoclave or high pressure apparatus.

Abstract translation: 使用m-平面或楔形晶种进行大规模制造氮化镓颗粒可以使用氨热生长方法进行。 将大面积单晶种子板悬挂在机架中，与氨和矿化剂一起放置在大直径的高压釜或内部加热的高压装置中，并将水晶进行氨水生长。 选择m平面或楔形晶种的取向以提供有效利用种子板和高压釜或高压装置内的体积。

公开(公告)号：US20140147650A1

公开(公告)日：2014-05-29

申请号：US14089281

申请日：2013-11-25

Applicant: SORAA, INC.

Inventor： WENKAN JIANG ,  MARK P. D'EVELYN ,  DERRICK S. KAMBER ,  DIRK EHRENTRAUT ,  MICHAEL KRAMES

IPC: H01L29/20

CPC classification number: H01L21/0254 ,  C30B7/105 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02642 ,  H01L21/02647 ,  H01L33/0075

Abstract: High quality ammonothermal group III metal nitride crystals having a pattern of locally-approximately-linear arrays of threading dislocations, methods of manufacturing high quality ammonothermal group III metal nitride crystals, and methods of using such crystals are disclosed. The crystals are useful for seed bulk crystal growth and as substrates for light emitting diodes, laser diodes, transistors, photodetectors, solar cells, and for photoelectrochemical water splitting for hydrogen generation devices.

Abstract translation: 公开了具有局部近似线性的穿透位错阵列的高品质氨热III族金属氮化物晶体，制造高品质氨热III族金属氮化物晶体的方法，以及使用这种晶体的方法。 该晶体可用于种子块状晶体生长，并且用作发光二极管，激光二极管，晶体管，光电探测器，太阳能电池和用于氢发生器件的光电化学水分解的衬底。

公开(公告)号：US20170029978A1

公开(公告)日：2017-02-02

申请号：US15226552

申请日：2016-08-02

Applicant: SORAA, INC.

Inventor： MARK P. D'EVELYN ,  DIRK EHRENTRAUT ,  WENKAN JIANG ,  BRADLEY C. DOWNEY

IPC: C30B33/06 ,  C30B25/20 ,  C30B29/40 ,  H01S5/32 ,  H01L29/04 ,  H01L33/32 ,  H01L31/0304 ,  H01S5/323 ,  C30B7/10 ,  H01L29/20

CPC classification number: C30B33/06 ,  C30B7/105 ,  C30B25/02 ,  C30B25/20 ,  C30B29/406 ,  H01L29/045 ,  H01L29/2003 ,  H01L31/03044 ,  H01L33/32 ,  H01S5/3202 ,  H01S5/32341 ,  H01S2304/00 ,  Y10T428/24355

Abstract: An ultralow defect gallium-containing nitride crystal and methods of making ultralow defect gallium-containing nitride crystals are disclosed. The crystals are useful as substrates for light emitting diodes, laser diodes, transistors, photodetectors, solar cells, and photoelectrochemical water splitting for hydrogen generators.

Abstract translation: 公开了一种超低缺陷含镓氮化物晶体和制造超低缺陷含镓氮化物晶体的方法。 该晶体可用作发光二极管，激光二极管，晶体管，光电检测器，太阳能电池和用于氢发生器的光电化学水分离的基板。