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公开(公告)号：USD751999S1
公开(公告)日：2016-03-22
申请号：US29456725
申请日：2013-06-03
Applicant: SORAA, INC.
Designer： Rajat Sharma , Andrew Felker , William D. Houck
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2.发明授权Methods and devices for light extraction from a group III-nitride volumetric LED using surface and sidewall roughening 有权使用表面和侧壁粗糙化的III族氮化物体积LED的光提取的方法和装置公开(公告)号：US09000466B1
公开(公告)日：2015-04-07
申请号：US13781633
申请日：2013-02-28
Applicant: Soraa, Inc.
Inventor： Rafael Aldaz , Aurelien David , Daniel F. Feezell , Thomas M. Katona , Rajat Sharma
CPC classification number: H01L33/22 , H01L33/0075 , H01L33/18 , H01L33/32 , H01L33/58 , H01L2933/0033 , H01L2933/0083
Abstract: Embodiments of the present disclosures are directed to improved approaches for achieving high-performance light extraction from a Group III-nitride volumetric LED chips. More particularly, disclosed herein are techniques for achieving high-performance light extraction from a Group III-nitride volumetric LED chip using surface and sidewall roughening.
Abstract translation: 本公开的实施例涉及用于从III族氮化物体积LED芯片实现高性能光提取的改进方法。 更具体地，本文公开了用于使用表面和侧壁粗糙化从III族氮化物体积LED芯片实现高性能光提取的技术。
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公开(公告)号：USRE47241E1
公开(公告)日：2019-02-12
申请号：US14979027
申请日：2015-12-22
Applicant: Soraa, Inc.
Inventor： Mark P. D'Evelyn , Rajat Sharma , Eric M. Hall , Daniel F. Feezell
Abstract: A light emitting device includes a substrate having a surface region and a light emitting diode overlying the surface region. The light emitting diode is fabricated on a semipolar or nonpolar GaN containing substrate and emits electromagnetic radiation of a first wavelength. The diode includes a quantum well region characterized by an electron wave function and a hole wave function. The electron wave function and the hole wave function are substantially overlapped within a predetermined spatial region of the quantum well region. The device has a transparent phosphor overlying the light emitting diode. The phosphor is excited by the substantially polarized emission to emit electromagnetic radiation of a second wavelength.
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公开(公告)号：USD803171S1
公开(公告)日：2017-11-21
申请号：US29539504
申请日：2015-09-15
Applicant: SORAA, INC.
Designer： Rajat Sharma , Andrew Felker , William D. Houck
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5.发明授权Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors 有权使用非极性或半极性含镓材料和透明荧光体的极化白光装置公开(公告)号：US08618560B2
公开(公告)日：2013-12-31
申请号：US13623788
申请日：2012-09-20
Applicant: Soraa, Inc.
Inventor： Mark P. D'Evelyn , Rajat Sharma , Eric M. Hall , Daniel F. Feezell
CPC classification number: H01L33/50 , H01L33/16 , H01L33/32 , H01L33/38 , H01L33/405 , H01L33/44 , H01L33/505 , H01L33/507 , H01L2224/48091 , H01L2224/48247 , H01L2924/12044 , H01L2924/00014 , H01L2924/00
Abstract: A light emitting device includes a substrate having a surface region and a light emitting diode overlying the surface region. The light emitting diode is fabricated on a semipolar or nonpolar GaN containing substrate and emits electromagnetic radiation of a first wavelength. The diode includes a quantum well region characterized by an electron wave function and a hole wave function. The electron wave function and the hole wave function are substantially overlapped within a predetermined spatial region of the quantum well region. The device has a transparent phosphor overlying the light emitting diode. The phosphor is excited by the substantially polarized emission to emit electromagnetic radiation of a second wavelength.
Abstract translation: 发光器件包括具有覆盖表面区域的表面区域和发光二极管的衬底。 发光二极管制造在含有半极性或非极性GaN的衬底上并且发射第一波长的电磁辐射。 二极管包括以电子波函数和空穴波函数为特征的量子阱区域。 电子波函数和空穴波函数在量子阱区域的预定空间区域内基本上重叠。 该器件具有覆盖发光二极管的透明磷光体。 磷光体被基本上极化的发射激发以发射第二波长的电磁辐射。
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Patent Agency Ranking
公开(公告)号：US10043946B2
公开(公告)日：2018-08-07
申请号：US15226656
申请日：2016-08-02
Applicant: SORAA, INC.
Inventor： Rafael Aldaz , Aurelien J. F. David , Daniel F. Feezell , Thomas M. Katona , Rajat Sharma , Michael J. Cich
Abstract: A method of fabricating LEDs from a wafer comprising a substrate and epitaxial layers and having a substrate side and a epitaxial side, said method comprising: (a) applying a laser beam across at least one of said substrate side or said epitaxial side of said wafer to define at least one laser-scribed recess having a laser-machined surface; and (b) singulating said wafer along said laser-scribed recess to form singulated LEDs, said singulated LEDs having a top surface, a bottom surface, and a plurality of sidewalls, at least one of said sidewalls comprising at least a first portion comprising at least a portion of said laser-machined surface.
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公开(公告)号：USD763806S1
公开(公告)日：2016-08-16
申请号：US29456727
申请日：2013-06-03
Applicant: SORAA, INC.
Designer： Rajat Sharma , Andrew Felker
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8.发明授权Methods and devices for light extraction from a Group III-nitride volumetric LED using surface and sidewall roughening 有权使用表面和侧壁粗糙化的III族氮化物体积LED的光提取方法和装置公开(公告)号：US09406843B2
公开(公告)日：2016-08-02
申请号：US14632755
申请日：2015-02-26
Applicant: SORAA, INC.
Inventor： Rafael Aldaz , Aurelien J. F. David , Daniel F. Feezell , Thomas M. Katona , Rajat Sharma
CPC classification number: H01L33/22 , H01L33/0075 , H01L33/18 , H01L33/32 , H01L33/58 , H01L2933/0033 , H01L2933/0083
Abstract: Embodiments of the present disclosures are directed to improved approaches for achieving high-performance light extraction from a Group III-nitride volumetric LED chips. More particularly, disclosed herein are techniques for achieving high-performance light extraction from a Group III-nitride volumetric LED chip using surface and sidewall roughening.
Abstract translation: 本公开的实施例涉及用于从III族氮化物体积LED芯片实现高性能光提取的改进方法。 更具体地，本文公开了用于使用表面和侧壁粗糙化从III族氮化物体积LED芯片实现高性能光提取的技术。
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公开(公告)号：USD743356S1
公开(公告)日：2015-11-17
申请号：US29441960
申请日：2013-01-11
Applicant: SORAA, INC.
Designer： Rajat Sharma , Andrew Felker , William D. Houck
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公开(公告)号：USD739363S1
公开(公告)日：2015-09-22
申请号：US29441116
申请日：2012-12-31
Applicant: SORAA, INC.
Designer： Rajat Sharma , Andrew Felker , William D. Houck
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